Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SMD TRANSISTOR 1020 Search Results

    SMD TRANSISTOR 1020 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 1020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD Transistor 1020

    Abstract: marking l69 FMMTL619
    Text: Transistors IC SMD Type Medium Power Transistor FMMTL619 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Very low equivalent on-resistance;RCE sat =160mÙ at 1.25A. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF FMMTL619 OT-23 125mA* 200mA, 500mA, 100MHz SMD Transistor 1020 marking l69 FMMTL619

    7027 SMD MARKING CODE

    Abstract: smd 7027 IPB03N03LA
    Text: IPB03N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 2.7 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB03N03LA P-TO263-3-2 Q67042-S4178 03N03LA 7027 SMD MARKING CODE smd 7027 IPB03N03LA

    14N03LA

    Abstract: 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 IPB14N03LA JESD22
    Text: IPB14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB14N03LA PG-TO263-3-2 14N03LA 14N03LA 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 JESD22

    smd 7027

    Abstract: IPB03N03LA 03N03LA JESD22 PG-TO263-3-2 IPB03N03LA G
    Text: IPB03N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 2.7 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB03N03LA PG-TO263-3-2 03N03LA smd 7027 03N03LA JESD22 PG-TO263-3-2 IPB03N03LA G

    smd 7027

    Abstract: No abstract text available
    Text: IPB03N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 2.7 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB03N03LA PG-TO263-3-2 Q67042-S4178 03N03LA smd 7027

    04N03L

    Abstract: Q67042-S4181 marking code br 39 SMD
    Text: IPB04N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.9 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB04N03LA PG-TO263-3-2 Q67042-S4181 04N03LA 04N03L Q67042-S4181 marking code br 39 SMD

    09N03

    Abstract: 09n03la PG-TO263-3-2 PG-TO-263-3-2 09N03LA equivalent IPB09N03LA JESD22 09N03L
    Text: IPB09N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 8.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB09N03LA PG-TO263-3-2 09N03LA 09N03 09n03la PG-TO263-3-2 PG-TO-263-3-2 09N03LA equivalent JESD22 09N03L

    04n03la

    Abstract: IPB04N03LA smd diode marking 77 JESD22 diode kv 1236
    Text: IPB04N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.9 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB04N03LA PG-TO263 04N03LA 04n03la smd diode marking 77 JESD22 diode kv 1236

    05N03

    Abstract: Q67042-S4141 05N03L SMD fet MARKING 34 D55 SMD CODE MARKING IPB05N03LA IPB05N03LAG 05n03la
    Text: IPB05N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 4.6 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB05N03LA PG-TO263-3-2 Q67042-S4141 05N03LA 05N03 Q67042-S4141 05N03L SMD fet MARKING 34 D55 SMD CODE MARKING IPB05N03LAG 05n03la

    IPB14N03LA

    Abstract: 14N03 14N03LA smd code D24 SMD CODE d20
    Text: IPB14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB14N03LA PG-TO263-3-2 Q67042-S4156 14N03LA 14N03 14N03LA smd code D24 SMD CODE d20

    09N03

    Abstract: 09n03la PG-TO263-3-2 PG-TO-263-3-2 Q67042-S4151 IPB09N03LA G SD SMD DIODE MARKING CODE SMD diode j25
    Text: IPB09N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 8.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB09N03LA PG-TO263-3-2 Q67042-S4151 09N03LA 09N03 09n03la PG-TO263-3-2 PG-TO-263-3-2 Q67042-S4151 IPB09N03LA G SD SMD DIODE MARKING CODE SMD diode j25

    05N03

    Abstract: 05N03LA IPB05N03LA JESD22 IPB05N03LAG
    Text: IPB05N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 4.6 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB05N03LA PG-TO263 05N03LA 05N03 05N03LA JESD22 IPB05N03LAG

    06n03la

    Abstract: PG-TO-263-3-2 06N03 IPB06N03LA PG-TO263-3-2 06n03la datasheet, download JESD22
    Text: IPB06N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 5.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB06N03LA PG-TO263-3-2 06N03LA 06n03la PG-TO-263-3-2 06N03 PG-TO263-3-2 06n03la datasheet, download JESD22

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watt, DCS/PCS Band PTF 102098* Description Key Features The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P-1dB and 14.5 dB linear gain. Full gold metallization


    Original     		PDF PCD1287CT P220ECT 1-877-GOLDMOS 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: PTF 102098 LDMOS RF Power Field Effect Transistor 90 Watts, 1805–1880 MHz, 1930–1990 MHz Description The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS or PCS bands. This LDMOS device operates at 47% efficiency P–1dB and 14.5 dB linear gain. Full


    Original     		PDF 1522-PTF

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    dinverter 768r

    Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF HEF4527BT HEF4531BT HEF4534BP HEF4534BT MSP-STK430X320 AD9054/PCB AD9054BST-135 IPS521G IPS521S IRL2203S dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC

    Untitled

    Abstract: No abstract text available
    Text: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold


    Original     		PDF 1/16W 1-877-GOLDMOS 1522-PTF

    HIR26-21C

    Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
    Text: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight


    Original     		PDF CT1003Q43-V2 HIR26-21C w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor

    rogers 4003 characteristics

    Abstract: No abstract text available
    Text: PTF 102003 LDMOS RF Power Field Effect Transistor 120 Watts, 2110–2170 MHz Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P–1dB and 14 dB linear gain. Full gold


    Original     		PDF 1522-PTF rogers 4003 characteristics

    130-watt

    Abstract: CDG 20260
    Text: PTF 102093 LDMOS RF Power Field Effect Transistor 130 Watts, 2110–2170 MHz Description Key Features The PTF 102093 is a 130–watt, GOLDMOS FET intended for WCDMA applications. The device is characterized for single– and two–carrier WCDMA operation in the 2110 to 2170 MHz band. Full


    Original     		PDF 1522-PTF 130-watt CDG 20260

    VIM-332

    Abstract: 200B103MW 50X 200B103MW
    Text: PTF 102088 LDMOS RF Power Field Effect Transistor 45 Watts, 2110–2170 MHz Key Features The PTF 102088 is a 45–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates with 47% efficiency at P–1dB and has a


    Original     		PDF 1522-PTF VIM-332 200B103MW 50X 200B103MW

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


    OCR Scan     		PDF BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A