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    SMD SAMSUNG TRANSISTOR Search Results

    SMD SAMSUNG TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD SAMSUNG TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Samsung 0603 capacitor 50v 10 x7r

    Abstract: CAPACITOR SMD SAMSUNG Vishay capacitor samsung smd capacitor 0.1uF 10 50V x7r 0603 Yageo smd resistor 10k smd 2a 3 PIN fet Samsung rohs 0603 capacitor capacitor 10uF 50V samsung L20 SMD SMD TRANSISTOR MARKING P2
    Text: ISL8560EVAL2Z: 2A High Voltage Buck Regulator with Integrated MOSFETs Application Note February 13, 2008 AN1324.3 The ISL8560 is a step down DC/DC power switching regulator which accepts a 9V to 60V input, and provides up to 2A of output current. The output voltage can be set


    Original     		PDF ISL8560EVAL2Z: AN1324 ISL8560 100kHz 600kHz ISL8560EVAL2Z Samsung 0603 capacitor 50v 10 x7r CAPACITOR SMD SAMSUNG Vishay capacitor samsung smd capacitor 0.1uF 10 50V x7r 0603 Yageo smd resistor 10k smd 2a 3 PIN fet Samsung rohs 0603 capacitor capacitor 10uF 50V samsung L20 SMD SMD TRANSISTOR MARKING P2

    preset resistor 10k

    Abstract: YAGEO resistor SMD TRANSISTOR MARKING P2 0603 AVX rohs x7r 0805 capacitors samsung 9v smd transistor H1065-00104-100V10-T H1045-00101-50V5-T Yageo smd resistor 10k smd transistor E3
    Text: ISL8540EVAL1Z: 2A High Voltage Buck Regulator with Integrated MOSFETs Application Note The ISL8540 is a step down DC/DC power switching regulator which accepts a 9V to 40V input, and provides up to 2A of output current. The output voltage can be set between 1.21V and 35V by means of an external resistor


    Original     		PDF ISL8540EVAL1Z: ISL8540 100kHz 600kHz AN1323 ISL8540EVAL1Z preset resistor 10k YAGEO resistor SMD TRANSISTOR MARKING P2 0603 AVX rohs x7r 0805 capacitors samsung 9v smd transistor H1065-00104-100V10-T H1045-00101-50V5-T Yageo smd resistor 10k smd transistor E3

    samsung s3c2440 user manual

    Abstract: schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet
    Text: H/W Design Guide System Controller S3C2440A 32-Bit RISC Microprocessor October, 2007 REV 1.0 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S3C2440A_H/W DESIGN GUIDE_REV 1.0 Important Notice


    Original     		PDF S3C2440A 32-Bit S3C2440A 22uF/36V 7uF/16V 47uF/16V MMBT3904 ATS49) 237X165X2t, samsung s3c2440 user manual schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet

    S3C2450

    Abstract: SMDK2450 ARM926EJ s3c2450 LTE480WV-F01 LAN91C115 arm926ej s3c2450 usb host datasheet samsung s3c2450 user manual LTV350QV S3C2443 S3C2450X
    Text: User’s Manual SMDK2450 S3C2450X RISC Microprocessor October 10, 2008 Preliminary REV 0.3 Preliminary product information describe products that are in development, for which full characterization data and associated errata are not yet available. Specifications and information herein are subject to change without notice.


    Original     		PDF SMDK2450) S3C2450X SMDK2450 omiss19 BSE-060-01 SMDK2450 S3C2450 ARM926EJ s3c2450 LTE480WV-F01 LAN91C115 arm926ej s3c2450 usb host datasheet samsung s3c2450 user manual LTV350QV S3C2443 S3C2450X

    smd transistor 5B1

    Abstract: s3c2450 5b1 smd transistor SMD Transistor Y23 SMDK2450 PJ-327-2 2A5 SMD transistor 1a6 SMD transistor 5B1 transistor smd 1B6 SMD transistor
    Text: 5 4 3 2 1 SMDK2450 Evaluation Board for S3C2450X 1. PCB Revision D Rev 0.0 Rev 0.1 Rev 0.2 Date Description 2007. 11. 22 2008. 2. 21 2008. 4. 07 2008. 5. 14 2008. 5. 29 2008. 6. 30 2008. 7. 02 Preliminary Version Modified in Cam/LCD ref Red Circle/Rectangle


    Original     		PDF SMDK2450 S3C2450X S3C2450 Add19 BSE-060-01 SMDK2450 smd transistor 5B1 5b1 smd transistor SMD Transistor Y23 PJ-327-2 2A5 SMD transistor 1a6 SMD transistor 5B1 transistor smd 1B6 SMD transistor

    K934

    Abstract: CSP1034 Krypton isolation k952 TRANSISTOR SMD MARKING CODE R8 smd diode code GU K936 k2950 Motorola modem schematic diagram 56k MARKING d4 SMD PNP TRANSISTOR
    Text: K²950G/K²950GU DATA ACCESS ARRANGEMENT CHIPSET HIGH PERFORMANCE, LOW COST, ALL SILICON DAA DATA ACCESS ARRANGEMENT FOR US (FCC), CANADA (DOC), and JAPAN (JATE) APPLICATIONS FEATURES ♦ High performance for modems up to V.34/ 33.6Kbps and V.90/56Kbps ♦ Low power consumption: 20mW active,


    Original     		PDF 950G/K 950GU 90/56Kbps K2934L UL1950 K2935U/ K2936U USB1300 220PF 73M2901 K934 CSP1034 Krypton isolation k952 TRANSISTOR SMD MARKING CODE R8 smd diode code GU K936 k2950 Motorola modem schematic diagram 56k MARKING d4 SMD PNP TRANSISTOR

    CL10B104KBNC

    Abstract: No abstract text available
    Text: NCS6415DWEVB NCS6415 Evaluation Board Manual http://onsemi.com Description This document describes NCS6415 SOIC−20WB package evaluation board. It should be used in conjunction with the data sheet, which contains full technical details on the device specification and operation. This evaluation


    Original     		PDF NCS6415DWEVB NCS6415 NCS6415DEVB: NCS6415DWEVB/D CL10B104KBNC

    samsung SMD resistors

    Abstract: RM06F1002CT RC1608F1001CS 6P sot23 x7r samsung cl10b222kbnc RM06F smd transistor 1132 S0T23-5 schematic buck converter
    Text: ISL6559EVAL1: Voltage Regulator Module Solution for AMD Hammer Family Processors Application Note June 2004 AN1132 Author: Thomas Victorin Introduction ISL6559 VRM Reference Design The AMD Hammer family microprocessors feature higher clock speeds and greater device density than previous


    Original     		PDF ISL6559EVAL1: AN1132 ISL6559 ISL6559EVAL1 associCR0603-16W-4993FT H2511-051R1-1/16W1-T 1/16W, H2511-07681-1/16W1-T samsung SMD resistors RM06F1002CT RC1608F1001CS 6P sot23 x7r samsung cl10b222kbnc RM06F smd transistor 1132 S0T23-5 schematic buck converter

    RK3026

    Abstract: SAMA5 10w led diode charger pad wide REGULATOR sw 13003 10kk thermistor SC053
    Text: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….…………………. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………………. 4


    Original     		PDF ACT2801 ACT2802 ACT4501 ACT4523 RK3026 SAMA5 10w led diode charger pad wide REGULATOR sw 13003 10kk thermistor SC053

    Automobile Black Box

    Abstract: Power Bank Freescale ACT2801 ACT2802 ACT8945A Atmel ACT8865 power management units high power
    Text: 3Q 2014 Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4


    Original     		PDF ACT2801 ACT2801C ACT2802 ACT2802B Automobile Black Box Power Bank Freescale ACT8945A Atmel ACT8865 power management units high power

    230V ac to 5V dc usb charger circuit

    Abstract: SAMA5 RK3026 s3c2416 charger pad wide
    Text: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4


    Original     		PDF ACT2801 ACT2801C ACT2802 ACT2802C 230V ac to 5V dc usb charger circuit SAMA5 RK3026 s3c2416 charger pad wide

    Untitled

    Abstract: No abstract text available
    Text: TLE4966-2K High Precision Hall Switch with two Outputs Datasheet Rev.1.0, 2010-06-28 Sense & Control Edition 2010-06-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		PDF TLE4966-2K GPX09300 HLG09283

    TLE4966-2K

    Abstract: marking code samsung SMD ABMT MICRON oneNAND
    Text: TLE4966-2K High Precision Hall Switch with two Outputs Datasheet Rev.1.0, 2010-06-28 Sense & Control Edition 2010-06-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		PDF TLE4966-2K GPX09300 HLG09283 TLE4966-2K marking code samsung SMD ABMT MICRON oneNAND

    TLE4966

    Abstract: Infrared sensor TSOP 1738 AEA03645 samsung bluetooth ARM926EJ-S C166 MIPS32 Infineon automotive semiconductor process technology sharp mipi marking code samsung SMD
    Text: TLE4966-3K High Sensitivity Automotive Hall Switch with direction detection Datasheet Rev.1.0, 2010-09-20 Sense & Control Edition 2010-09-20 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF TLE4966-3K GPX09300 HLG09283 TLE4966 Infrared sensor TSOP 1738 AEA03645 samsung bluetooth ARM926EJ-S C166 MIPS32 Infineon automotive semiconductor process technology sharp mipi marking code samsung SMD

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124

    panasonic inverter manual vf 200

    Abstract: panasonic inverter manual vf 100 sony 369-42 murata filter cfw 455 ht murata filter cfj455 CFWM 450 HT TA8864N cfw 455 murata CFW 455 HT mitsubishi inverter fr service manual
    Text: The Piezoelectric Effect Piezoelectric Effect Basics A piezoelectric substance is one that produces an electric charge when a mechanical stress is applied the substance is squeezed or stretched . Conversely, a mechanical deformation (the substance shrinks or expands) is produced


    Original     		PDF

    str 5707

    Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification


    Original     		PDF MS-001, MS-010, MS-011) MS-010) MS-018) str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703

    2SD 4206

    Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original     		PDF MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B 2SD 4206 str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC

    TRANSISTOR SMD 613

    Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original     		PDF MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor

    HH2500-18-E-25PPM

    Abstract: VF3AH1-25MHZ
    Text: User's Guide SLLU155 – December 2011 TLK110 Customer EVM This user's guide details the design and operation of the evaluation module EVM for the TLK110. 1 2 3 4 Contents TLK110 EVM Purpose and Content . 1


    Original     		PDF SLLU155 TLK110 TLK110. TLK110CUSEVM HH2500-18-E-25PPM VF3AH1-25MHZ

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40

    0603WAJ0103T5E

    Abstract: CL10B474K08NNNC 0603WAJ0000T5E 712 transistor smd sot23 smd transistor 6p smd diode L27 CL10F105Z08NNNC CRG16GT V810 schottky diode C1608NP0100JGT
    Text: Datum: 15/07/2008 SL V 8 .10 SLSLLI33.RPT SL-S-D-12 Digital_Logic AG DETAIL-STUECKLISTE Nr. :811060-VO.3 MSEBX8 00. V0.3 von SCM Erstellt am Pos.:Lay: Art.Nr. 1 490520 Bezeichnung : Seite: CH-4542 Luterbach Nr.811060-V0.3. Lay.=0 Lay.=1 Lay.=2 Lay.=3 Lay.=4


    OCR Scan     		PDF SLSLLI33 SL-S-D-12 CH-4542 811060-VO 811060-V0 MSEBX800 LX800/520 LX800 0603WAJ0103T5E CL10B474K08NNNC 0603WAJ0000T5E 712 transistor smd sot23 smd transistor 6p smd diode L27 CL10F105Z08NNNC CRG16GT V810 schottky diode C1608NP0100JGT

    organizational structure chart of samsung company

    Abstract: organizational structure samsung organizational chart of samsung HP4145 5cl smd transistor marking code samsung SMD structure chart of samsung company Sample form for INCOMING Inspection of RAW MATERIAL WHTS marking date code samsung semiconductor
    Text: QUALITY and RELIABILITY 1. INTRODUCTION SEC has been providing a wide variety of semiconductor products to the world since 1974. Since this time, extensive in-sights have been gained to create methods which most effectively result in reliable products. The worldwide customers of SEC have


    OCR Scan     		PDF