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    Samsung Electronics Co. Ltd CL10B474K08NNNC

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    ComSIT USA CL10B474K08NNNC 72,000
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    0603WAJ0103T5E

    Abstract: CL10B474K08NNNC 0603WAJ0000T5E 712 transistor smd sot23 smd transistor 6p smd diode L27 CL10F105Z08NNNC CRG16GT V810 schottky diode C1608NP0100JGT
    Text: Datum: 15/07/2008 SL V 8 .10 SLSLLI33.RPT SL-S-D-12 Digital_Logic AG DETAIL-STUECKLISTE Nr. :811060-VO.3 MSEBX8 00. V0.3 von SCM Erstellt am Pos.:Lay: Art.Nr. 1 490520 Bezeichnung : Seite: CH-4542 Luterbach Nr.811060-V0.3. Lay.=0 Lay.=1 Lay.=2 Lay.=3 Lay.=4


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    SLSLLI33 SL-S-D-12 CH-4542 811060-VO 811060-V0 MSEBX800 LX800/520 LX800 0603WAJ0103T5E CL10B474K08NNNC 0603WAJ0000T5E 712 transistor smd sot23 smd transistor 6p smd diode L27 CL10F105Z08NNNC CRG16GT V810 schottky diode C1608NP0100JGT PDF