IRHNA57260SE
Abstract: 9936 b
Text: PD - 91839E RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57260SE 200V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNA57260SE 100K Rads (Si) RDS(on) 0.038Ω ID 55A SMD-2 International Rectifier’s R5TM technology provides
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91839E
IRHNA57260SE
IRHNA57260SE
eas252-7105
9936 b
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IRHNJ57230SE
Abstract: smd diode 78a
Text: PD - 93836 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57230SE 200V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57230SE 100K Rads (Si) RDS(on) 0.22Ω ID 12A SMD-0.5 International Rectifier’s R5TM technology provides
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IRHNJ57230SE
IRHNJ57230SE
smd diode 78a
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Abstract: No abstract text available
Text: PD - 93837 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57234SE 100K Rads (Si) RDS(on) 0.40Ω ID 10A SMD-0.5 International Rectifier’s R5TM technology provides
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IRHNJ57234SE
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IRHNJ57234SE
Abstract: smd diode 64A
Text: PD - 93837 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57234SE 100K Rads (Si) RDS(on) 0.40Ω ID 10A SMD-0.5 International Rectifier’s R5TM technology provides
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IRHNJ57234SE
IRHNJ57234SE
smd diode 64A
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Untitled
Abstract: No abstract text available
Text: PD - 91839D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57260SE 200V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNA57260SE 100K Rads (Si) RDS(on) 0.038Ω ID 55A SMD-2 International Rectifier’s R5TM technology provides
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91839D
IRHNA57260SE
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IRHNA57163SE
Abstract: 93856
Text: PD - 93856 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57163SE 130V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA57163SE 100K Rads (Si) 0.0135Ω 75A* SMD-2 International Rectifier’s R5TM technology provides
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IRHNA57163SE
IRHNA57163SE
93856
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IRHNA57264SE
Abstract: No abstract text available
Text: PD - 93816A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57264SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNA57264SE 100K Rads (Si) RDS(on) 0.06Ω ID 49A SMD-2 International Rectifier’s R5TM technology provides
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3816A
IRHNA57264SE
IRHNA57264SE
ea252-7105
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Untitled
Abstract: No abstract text available
Text: PD - 93816 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57264SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNA57264SE 100K Rads (Si) RDS(on) 0.06Ω ID 49A SMD-2 International Rectifier’s R5TM technology provides
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IRHNA57264SE
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working of 5 pen pc technology
Abstract: rifa pme 285 for all smd components plastic raw material xenon lamp igniter 5 PEN PC TECHNOLOGY free 5 PEN PC TECHNOLOGY existing xenon hid ballast Electronic ignitors for HID lamp circuits abstract 5 pen pc technology
Text: Advances in Class-I C0G MLCC and SMD Film Capacitors Xilin Xu, Matti Niskala*, Abhijit Gurav, Mark Laps, Kimmo Saarinen*, Aziz Tajuddin, Davide Montanari*, Francesco Bergamaschi*, and Evangelista Boni* KEMET Electronics Corporation, 2835 KEMET Way, Simpsonville, SC 29681
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p77-84,
p187-191,
working of 5 pen pc technology
rifa pme 285
for all smd components
plastic raw material
xenon lamp igniter
5 PEN PC TECHNOLOGY free
5 PEN PC TECHNOLOGY existing
xenon hid ballast
Electronic ignitors for HID lamp circuits
abstract 5 pen pc technology
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IRF5NJ5305
Abstract: IRF (10A) 55V
Text: PD - 94033 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ5305 55V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ5305 -55V RDS(on) 0.065Ω ID -22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRF5NJ5305
IRF5NJ5305
IRF (10A) 55V
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Untitled
Abstract: No abstract text available
Text: PD - 94033 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ5305 55V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ5305 -55V RDS(on) 0.065Ω ID -22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRF5NJ5305
high-en252-7105
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IRHNJ53230
Abstract: IRHNJ54230 IRHNJ57230 IRHNJ58230
Text: PD - 93753 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57230 200V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si)
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IRHNJ57230
IRHNJ57230
IRHNJ53230
IRHNJ54230
IRHNJ58230
1000K
IRHNJ54230
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Untitled
Abstract: No abstract text available
Text: PD - 94038 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ9540 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ9540 -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRF5NJ9540
-100V
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IRHNJ53130
Abstract: IRHNJ54130 IRHNJ57130 IRHNJ58130 93754B
Text: PD - 93754B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57130 100V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) RDS(on) 0.060Ω 0.060Ω ID 22A* 22A* IRHNJ54130
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93754B
IRHNJ57130
IRHNJ57130
IRHNJ53130
IRHNJ54130
IRHNJ58130
1000K
moto252-7105
IRHNJ54130
93754B
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mosfet motor dc 48v
Abstract: IRHNJ54034 IRHNJ57034 IRHNJ58034 IRHNJ53034
Text: PD - 93752A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57034 60V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) RDS(on) 0.030Ω 0.030Ω ID 22A* 22A* IRHNJ54034
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3752A
IRHNJ57034
IRHNJ57034
IRHNJ53034
IRHNJ54034
IRHNJ58034
1000K
c252-7105
mosfet motor dc 48v
IRHNJ54034
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Untitled
Abstract: No abstract text available
Text: PD - 93752 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57034 60V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) RDS(on) 0.030Ω 0.030Ω ID 22A* 22A* IRHNJ54034
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IRHNJ57034
IRHNJ53034
IRHNJ54034
IRHNJ58034
1000K
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Untitled
Abstract: No abstract text available
Text: PD - 93754A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57130 100V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) RDS(on) 0.060Ω 0.060Ω ID 22A* 22A* IRHNJ54130
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3754A
IRHNJ57130
IRHNJ53130
IRHNJ54130
IRHNJ58130
1000K
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smd diode schottky code marking 2F
Abstract: smd D207 2F SMD CODE MARKING 12CTQ 12CTQ035S 12CTQ040S 12CTQ045S 40HFL40S02 IRFP460 SMD-220
Text: PD-20554 03/99 12CTQ.S Series SCHOTTKY RECTIFIER 12 Amp D2Pak SMD-220 Major Ratings and Characteristics Characteristics Description/Features The 12CTQ.S center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The
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PD-20554
12CTQ.
SMD-220)
smd diode schottky code marking 2F
smd D207
2F SMD CODE MARKING
12CTQ
12CTQ035S
12CTQ040S
12CTQ045S
40HFL40S02
IRFP460
SMD-220
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IRF (10A) 55V
Abstract: No abstract text available
Text: PD - 93955 LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ024 55V, N-CHANNEL Product Summary Part Number IRL5NJ024 RDS(on) 0.06Ω BVDSS 55V ID 17A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRL5NJ024
high-en252-7105
IRF (10A) 55V
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Untitled
Abstract: No abstract text available
Text: PD - 93751 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57Z30 30V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 300K Rads (Si) RDS(on) 0.020Ω 0.020Ω ID 22A* 22A* IRHNJ54Z30
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IRHNJ57Z30
IRHNJ53Z30
IRHNJ54Z30
IRHNJ58Z30
1000K
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IRHNJ57Z30
Abstract: IRHNJ53Z30 IRHNJ54Z30 IRHNJ58Z30 el 803 s
Text: PD - 93751A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57Z30 30V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 300K Rads (Si) RDS(on) 0.020Ω 0.020Ω ID 22A* 22A* IRHNJ54Z30
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3751A
IRHNJ57Z30
IRHNJ57Z30
IRHNJ53Z30
IRHNJ54Z30
IRHNJ58Z30
1000K
motor252-7105
IRHNJ54Z30
el 803 s
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IRHNJ3130
Abstract: IRHNJ4130 IRHNJ7130 IRHNJ8130
Text: PD - 93820 IRHNJ7130 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ7130 100K Rads (Si) IRHNJ3130 300K Rads (Si) IRHNJ4130 600K Rads (Si) IRHNJ8130 1000K Rads (Si)
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IRHNJ7130
IRHNJ7130
IRHNJ3130
IRHNJ4130
IRHNJ8130
1000K
g252-7105
IRHNJ4130
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Untitled
Abstract: No abstract text available
Text: PD - 91852C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57064 60V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHNA57064 100K Rads (Si) 0.0056Ω IRHNA53064 300K Rads (Si) 0.0056Ω ID 75*A 75*A IRHNA54064
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91852C
IRHNA57064
IRHNA53064
IRHNA54064
IRHNA58064
1000K
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Untitled
Abstract: No abstract text available
Text: _ PZT2907 PZT2907A J SILICON PLANAR EPITAXIAL TRANSISTORS PNP medium power transistors in a m icrominiature SMD package SOT-223 . Designed prim arily fo r high-speed switching and driver applications. Q UICK REFERENCE D A T A _
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PZT2907
PZT2907A
OT-223)
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