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    IRHNA57260SE Price and Stock

    Infineon Technologies AG IRHNA57260SED

    Power MOSFET, N Channel, 200 V, 53.5 A, 38 Milliohms, SMD-2, 3 Pins, Surface Mount - Bulk (Alt: IRHNA57260SED)
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    Avnet Americas IRHNA57260SED Bulk 50
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    Infineon Technologies AG IRHNA57260SE

    Power Field-Effect Transistor, 53.5A I(D), 200V, 0.038Ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor Fet |Infineon IRHNA57260SE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IRHNA57260SE Bulk 1
    • 1 $834.87
    • 10 $810.85
    • 100 $761.8
    • 1000 $761.8
    • 10000 $761.8
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    Onlinecomponents.com IRHNA57260SE 2
    • 1 $1149.34
    • 10 $1103.35
    • 100 $1103.35
    • 1000 $1103.35
    • 10000 $1103.35
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    Chip1Stop IRHNA57260SE 2
    • 1 $1190
    • 10 $1150
    • 100 $1150
    • 1000 $1150
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    IBS Electronics IRHNA57260SE 2 1
    • 1 $1117.47
    • 10 $1117.47
    • 100 $1117.47
    • 1000 $1117.47
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    IRHNA57260SE Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRHNA57260SE International Rectifier RADIATION HARDENED POWER MOSFET Original PDF
    IRHNA57260SE International Rectifier Radiation Hardened Power MOSFET Original PDF

    IRHNA57260SE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JANSR2N7473U2

    Abstract: IRHNA57260SE
    Text: PD - 91839H RADIATION HARDENED POWER MOSFET THRU-HOLE SMD-2 IRHNA57260SE JANSR2N7473U2 200V, N CHANNEL REF:MIL-PRF-19500/684 4# c TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA57260SE 100K Rads (Si) 0.038Ω 53.5A JANSR2N7473U2


    Original     		PDF 91839H IRHNA57260SE JANSR2N7473U2 MIL-PRF-19500/684 IRHNA57260SE MIL-STD-750, MlL-STD-750, JANSR2N7473U2

    Untitled

    Abstract: No abstract text available
    Text: PD - 91839D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57260SE 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNA57260SE 100K Rads (Si) RDS(on) 0.038Ω ID 55A SMD-2 International Rectifier’s R5TM technology provides


    Original     		PDF 91839D IRHNA57260SE

    Untitled

    Abstract: No abstract text available
    Text: PD-91839K RADIATION HARDENED POWER MOSFET THRU-HOLE SMD-2 IRHNA57260SE JANSR2N7473U2 200V, N CHANNEL REF:MIL-PRF-19500/684 5ÃÃ$ TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA57260SE 100K Rads (Si) 0.038Ω 53.5A JANSR2N7473U2


    Original     		PDF PD-91839K IRHNA57260SE JANSR2N7473U2 MIL-PRF-19500/684 IRHNA57260SE MIL-STD-750, MlL-STD-750,

    IRF N-Channel Power MOSFETs

    Abstract: IRHNA57260SE JANSR2N7473U2
    Text: PD-91839K RADIATION HARDENED POWER MOSFET THRU-HOLE SMD-2 IRHNA57260SE JANSR2N7473U2 200V, N CHANNEL REF:MIL-PRF-19500/684 5ÃÃ$ ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA57260SE 100K Rads (Si) 0.038Ω 53.5A JANSR2N7473U2


    Original     		PDF PD-91839K IRHNA57260SE JANSR2N7473U2 MIL-PRF-19500/684 IRHNA57260SE MIL-STD-750, MlL-STD-750, IRF N-Channel Power MOSFETs JANSR2N7473U2

    Untitled

    Abstract: No abstract text available
    Text: PD - 91839A REPETITIVE AVALANCHE AND dv/dt RATED IRHNA57260SE MOSFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.043Ω International Rectifier’s (SEE) RAD HARD technology MOSFETs demonstrate immunity to SEE failure.


    Original     		PDF 1839A IRHNA57260SE 200Volt,

    IRHNA57260SE

    Abstract: No abstract text available
    Text: PD - 91839G RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57260SE 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNA57260SE 100K Rads (Si) RDS(on) 0.043Ω ID 55A SMD-2 International Rectifier’s R5TM technology provides


    Original     		PDF 91839G IRHNA57260SE IRHNA57260SE MIL-STD-750, MlL-STD-750,

    IRHNA57260SE

    Abstract: 9936 b
    Text: PD - 91839E RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57260SE 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNA57260SE 100K Rads (Si) RDS(on) 0.038Ω ID 55A SMD-2 International Rectifier’s R5TM technology provides


    Original     		PDF 91839E IRHNA57260SE IRHNA57260SE eas252-7105 9936 b

    IRHNA57260SE

    Abstract: No abstract text available
    Text: PD - 91839F RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57260SE 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNA57260SE 100K Rads (Si) RDS(on) 0.038Ω ID 55A SMD-2 International Rectifier’s R5TM technology provides


    Original     		PDF 91839F IRHNA57260SE IRHNA57260SE MIL-STD-750, MlL-STD-750,

    IRHNA57260SE

    Abstract: JANSR2N7473U2
    Text: PD-91839J RADIATION HARDENED POWER MOSFET THRU-HOLE SMD-2 IRHNA57260SE JANSR2N7473U2 200V, N CHANNEL REF:MIL-PRF-19500/684 5ÃÃ$ ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA57260SE 100K Rads (Si) 0.038Ω 53.5A JANSR2N7473U2


    Original     		PDF PD-91839J IRHNA57260SE JANSR2N7473U2 MIL-PRF-19500/684 IRHNA57260SE MIL-STD-750, MlL-STD-750, JANSR2N7473U2

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		PDF 4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


    Original     		PDF 94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS

    2N7550

    Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
    Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators


    Original     		PDF

    2N6764 JANTX

    Abstract: 91447 IR2113L
    Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450


    Original     		PDF IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450 IRH7450SE 2N6764 JANTX 91447 IR2113L

    IRHNJ597230SCS

    Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
    Text: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5


    Original     		PDF 4047A IRHNJ597130 IRHNJ593130 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNJ597230SCS international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS