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    SMD MARKING CODE ACY Search Results

    SMD MARKING CODE ACY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD MARKING CODE ACY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    merlin gerin fuse

    Abstract: IR 2544S MICRO FUSE-LINKS 1608 TYPE HRC fuse gg GEC MGI1252 THERMAL Fuse m20 tf 115 c smd marking 1pn ns 1000 n merlin gerin microtemp g4a01
    Text: 2189 Technical portal and online community for Design Engineers - www.element-14.com Fuses & Circuit Breakers Page 10x35mm Fuses . . . . . . . . . . . . . . . . . . . . . . . . . . . 10x38mm Fuses . . . . . . . . . . . . . . . . . . . . . . . . . . . 14x51mm Fuses . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 10x35mm 10x38mm 14x51mm 22x58mm 5x20mm 5x25mm 35x25 3x32mm merlin gerin fuse IR 2544S MICRO FUSE-LINKS 1608 TYPE HRC fuse gg GEC MGI1252 THERMAL Fuse m20 tf 115 c smd marking 1pn ns 1000 n merlin gerin microtemp g4a01 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF

    SMD MARKING CODE CT2R

    Abstract: CT1R smd marking code diode marking ct2r CT2R CT1R smd marking ct2r marking code ct2r CT1F SAB-C508 smd diode marking d3h
    Text: D a t a Sh e e t , A u g u s t 2 0 0 0 C508 8-Bit CMOS Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2000-08 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2000.


    Original     		D-81541 GPD09257 SMD MARKING CODE CT2R CT1R smd marking code diode marking ct2r CT2R CT1R smd marking ct2r marking code ct2r CT1F SAB-C508 smd diode marking d3h PDF

    TELEVISION EHT TRANSFORMERS

    Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
    Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes


    OCR Scan     		LCD01 TELEVISION EHT TRANSFORMERS BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31 PDF

    smd transistor marking HT1

    Abstract: SMD MARKING CODE ht1 smd dk qk A212 A221 mt49h32m18cfm-25 RLDRAM mt49h smd code marking CK Ht1 SMD CODE SAC305 reflow bga
    Text: 576Mb: x9, x18 2.5V Vext, 1.8V Vdd, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock


    Original     		576Mb: MT49H32M18C MT49H64M9C 09005aef815b2df8/Source: 09005aef811ba111 smd transistor marking HT1 SMD MARKING CODE ht1 smd dk qk A212 A221 mt49h32m18cfm-25 RLDRAM mt49h smd code marking CK Ht1 SMD CODE SAC305 reflow bga PDF

    C505L

    Abstract: C505L-4E SAB-C501 SAB-C505L SAF-C505L SAK-C505L AD10 C501
    Text: SAB-C501 Microcomputer Components 8-Bit CMOS Microcontroller C505L Data Sheet 06.99 fi i. n w w //w : tp ht om c n. o ne C505L Data Sheet Revision History : Current Version : 06.99 Previous Releases : Original Version Edition 06.99 This edition was realized using the software system FrameMaker.


    Original     		SAB-C501 C505L C505L memory99-06-14 P-MQFP-80-1 GPM05249 P-MQFP-80-1 C505L-4E SAB-C501 SAB-C505L SAF-C505L SAK-C505L AD10 C501 PDF

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		256Mb: MT49H8M32 MT49H16M16 144-Ball 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM PDF

    smd diode marking a4h

    Abstract: smd diode marking d3h SMD MARKING CODE E1H acy smd smd diode marking d2h smd diode marking D7H SMD MARKING CODE E2H smd transistor marking A7 p7 sab-c517a smd transistor marking a1h
    Text: 0LFURFRPSXWHU 0LFURFRPSXWHU&RPSRQHQWV &RPSRQHQWV %LW &026 0LFURFRQWUROOHU 0LFURFRQWUROOHU %LW &026 &$ &$ 'DWD 6KHHW 6KHHW  'DWD .d s e n r/ m to e i s uc .  w nd w o w // mic : tp Se t h C517A Data Sheet Revision History : 01.99 Previous Releases :


    Original     		C517A P-LCC-84 P-LCC-100-2 C517A P-LCC-84-2 P-LCC-84-2 smd diode marking a4h smd diode marking d3h SMD MARKING CODE E1H acy smd smd diode marking d2h smd diode marking D7H SMD MARKING CODE E2H smd transistor marking A7 p7 sab-c517a smd transistor marking a1h PDF

    marking d6b

    Abstract: No abstract text available
    Text: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144 Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		256Mb: 256Mb 09005aef810c0ffc 256Mbx16x32RLDRAM marking d6b PDF

    MT49H16M18C

    Abstract: No abstract text available
    Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		288Mb 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C MT49H16M18C PDF

    BA5 marking

    Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
    Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		288Mb MT49H16M18C MT49H32M9C 144-Ball 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C BA5 marking BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE PDF

    RLDRAM

    Abstract: MT49H16M18C
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization


    Original     		288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron RLDRAM MT49H16M18C PDF

    smd transistor marking HT1

    Abstract: MT49H16M36 MICRON BGA PART MARKING MARKING SMD x9 RLDRAM
    Text: 576Mb: x9, x18, x36 2.5V Vext, 1.8V Vdd, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b smd transistor marking HT1 MT49H16M36 MICRON BGA PART MARKING MARKING SMD x9 RLDRAM PDF

    MT49H16M18C

    Abstract: No abstract text available
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization


    Original     		288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron MT49H16M18C PDF

    MT49H16M18C

    Abstract: No abstract text available
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		288Mb: MT49H16M18C 09005aef815b2df8/Source: 09005aef811ba111 2003Micron MT49H16M18C PDF

    smd transistor marking HT1

    Abstract: MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 28.8 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		288Mb: MT49H16M18C 09005aef815b2df8/Source: 09005aef811ba111 2003Micron smd transistor marking HT1 MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08 PDF

    MT49H16M18

    Abstract: No abstract text available
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate


    Original     		288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MT49H16M18 PDF

    MICRON BGA PART MARKING

    Abstract: MT49H16M36
    Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING MT49H16M36 PDF

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		256Mb: 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM PDF

    RLDRAM mt49h

    Abstract: MT49H16M18C
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 288Mb RLDRAM mt49h MT49H16M18C PDF

    BA6A

    Abstract: marking code d2c smd
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		256Mb: 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM BA6A marking code d2c smd PDF

    smd code marking x18

    Abstract: MT49H16M36
    Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b smd code marking x18 MT49H16M36 PDF

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		256Mb: 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM PDF