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    SMD MARKING CODE AADV Search Results

    SMD MARKING CODE AADV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD MARKING CODE AADV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SR52

    Abstract: FY618 SR-52
    Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM


    Original     		PDF 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 SR52 FY618 SR-52

    MT28F1284W18

    Abstract: smd codes marking A21 FY618
    Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for fast PROGRAM


    Original     		PDF MT28F1284W18 56-Ball 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 smd codes marking A21 FY618

    FY618

    Abstract: FY617
    Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM


    Original     		PDF 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 FY618 FY617

    SMD MARKING CODE AADV

    Abstract: marking SR5 SMD MT28F1284W18 AADV
    Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for in-factory PROGRAM operation


    Original     		PDF MT28F1284W18 56-Ball 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 SMD MARKING CODE AADV marking SR5 SMD AADV

    Untitled

    Abstract: No abstract text available
    Text: 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W256KW16BEGB 16-word 09005aef8329f3e3 09005aef82e419a5

    smd transistor bq

    Abstract: A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150
    Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM


    Original     		PDF MT28F1284W18 56-Ball 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 smd transistor bq A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAMTM 1.5 Memory MT45W4MW16BKGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7–1.95V VCC


    Original     		PDF MT45W4MW16BKGB 09005aef826b4c74/Source: 09005aef826b4cf6

    Untitled

    Abstract: No abstract text available
    Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W2MW16BGB 16-word 09005aef82832fa2 09005aef82832f5f

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W512KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W512KW16BEGB 16-word 09005aef82e41987/Source: 09005aef82e419a5

    smd code marking HD

    Abstract: linear technology part numbering smd code Ub SMD MARKING CODE h5
    Text: 8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W512KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W512KW16BEGB 16-word 09005aef82e41987 09005aef82e419a5 smd code marking HD linear technology part numbering smd code Ub SMD MARKING CODE h5

    Untitled

    Abstract: No abstract text available
    Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W2MW16BGB 16-word 09005aef82832fa2 09005aef82832f5f

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W256KW16BEGB 16-word 09005aef8329f3e3/Source: 09005aef82e419a5

    psram

    Abstract: No abstract text available
    Text: Preliminary‡ 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W2MW16BGB 16-word 09005aef82832fa2 09005aef82832f5f psram

    P24Z

    Abstract: MT45W2MW16BGB SMD MARKING CODE h5
    Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W2MW16BGB 16-word 09005aef82832fa2 09005aef82832f5f P24Z MT45W2MW16BGB SMD MARKING CODE h5

    A192

    Abstract: P24Z
    Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W2MW16BGB 16-word 09005aef82832fa2/Source: 09005aef82832f5f A192 P24Z

    16MB_BURST_CR1_0_P23Z

    Abstract: active suspension sensor MT45W1MW16BDGB
    Text: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages:


    Original     		PDF MT45W1MW16BDGB 09005aef81cb58ed/Source: 09005aef81c7a667 16MB_BURST_CR1_0_P23Z active suspension sensor MT45W1MW16BDGB

    Untitled

    Abstract: No abstract text available
    Text: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and


    Original     		PDF MT45W1MW16BDGB 09005aef81cb58ed/Source: 09005aef81c7a667

    Untitled

    Abstract: No abstract text available
    Text: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and


    Original     		PDF MT45W1MW16BDGB 09005aef81cb58ed/Source: 09005aef81c7a667

    Untitled

    Abstract: No abstract text available
    Text: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and


    Original     		PDF MT45W1MW16BDGB 09005aef81cb58ed 09005aef81c7a667

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and


    Original     		PDF MT45W1MW16BDGB 09005aef81cb58ed/Source: 09005aef81c7a667

    Untitled

    Abstract: No abstract text available
    Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ


    Original     		PDF 128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65

    MT45W8MW16BGX-7013LWT

    Abstract: MT45W8MW16 FBGA DECODER MT45W8MW16BGX
    Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/ Page/Burst CellularRAM 1.5 Memory Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC


    Original     		PDF 128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 MT45W8MW16BGX-7013LWT MT45W8MW16 FBGA DECODER MT45W8MW16BGX

    Untitled

    Abstract: No abstract text available
    Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ • Random access time: 70ns


    Original     		PDF 128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65

    cr1 5 p26z

    Abstract: No abstract text available
    Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ


    Original     		PDF 128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 cr1 5 p26z