SR52
Abstract: FY618 SR-52
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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Original
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16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SR52
FY618
SR-52
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PDF
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MT28F1284W18
Abstract: smd codes marking A21 FY618
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for fast PROGRAM
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Original
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MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
smd codes marking A21
FY618
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PDF
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FY618
Abstract: FY617
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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Original
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16-word
16-bit)
09005aef80b425b4
MT28F1284W18
FY618
FY617
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PDF
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SMD MARKING CODE AADV
Abstract: marking SR5 SMD MT28F1284W18 AADV
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for in-factory PROGRAM operation
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Original
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MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SMD MARKING CODE AADV
marking SR5 SMD
AADV
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PDF
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Untitled
Abstract: No abstract text available
Text: 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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Original
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MT45W256KW16BEGB
16-word
09005aef8329f3e3
09005aef82e419a5
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PDF
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smd transistor bq
Abstract: A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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Original
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MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
smd transistor bq
A22 SMD CODE
SMD MARKING g3
transistor smd marking BA RE
FY616
A22 SMD MARKING CODE
AG qd SMD
smd code book 6e
smd marking g8
TRS.150
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance‡ 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAMTM 1.5 Memory MT45W4MW16BKGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7–1.95V VCC
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Original
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MT45W4MW16BKGB
09005aef826b4c74/Source:
09005aef826b4cf6
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PDF
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Untitled
Abstract: No abstract text available
Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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Original
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MT45W2MW16BGB
16-word
09005aef82832fa2
09005aef82832f5f
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W512KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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Original
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MT45W512KW16BEGB
16-word
09005aef82e41987/Source:
09005aef82e419a5
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PDF
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smd code marking HD
Abstract: linear technology part numbering smd code Ub SMD MARKING CODE h5
Text: 8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W512KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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Original
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MT45W512KW16BEGB
16-word
09005aef82e41987
09005aef82e419a5
smd code marking HD
linear technology part numbering
smd code Ub
SMD MARKING CODE h5
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PDF
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Untitled
Abstract: No abstract text available
Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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Original
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MT45W2MW16BGB
16-word
09005aef82832fa2
09005aef82832f5f
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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Original
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MT45W256KW16BEGB
16-word
09005aef8329f3e3/Source:
09005aef82e419a5
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PDF
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psram
Abstract: No abstract text available
Text: Preliminary‡ 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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MT45W2MW16BGB
16-word
09005aef82832fa2
09005aef82832f5f
psram
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PDF
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P24Z
Abstract: MT45W2MW16BGB SMD MARKING CODE h5
Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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Original
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MT45W2MW16BGB
16-word
09005aef82832fa2
09005aef82832f5f
P24Z
MT45W2MW16BGB
SMD MARKING CODE h5
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PDF
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A192
Abstract: P24Z
Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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Original
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MT45W2MW16BGB
16-word
09005aef82832fa2/Source:
09005aef82832f5f
A192
P24Z
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PDF
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16MB_BURST_CR1_0_P23Z
Abstract: active suspension sensor MT45W1MW16BDGB
Text: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages:
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Original
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MT45W1MW16BDGB
09005aef81cb58ed/Source:
09005aef81c7a667
16MB_BURST_CR1_0_P23Z
active suspension sensor
MT45W1MW16BDGB
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PDF
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Untitled
Abstract: No abstract text available
Text: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and
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Original
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MT45W1MW16BDGB
09005aef81cb58ed/Source:
09005aef81c7a667
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PDF
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Untitled
Abstract: No abstract text available
Text: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and
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Original
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MT45W1MW16BDGB
09005aef81cb58ed/Source:
09005aef81c7a667
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PDF
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Untitled
Abstract: No abstract text available
Text: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and
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Original
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MT45W1MW16BDGB
09005aef81cb58ed
09005aef81c7a667
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance‡ 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and
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Original
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MT45W1MW16BDGB
09005aef81cb58ed/Source:
09005aef81c7a667
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PDF
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Untitled
Abstract: No abstract text available
Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ
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128Mb:
MT45W8MW16BGX
09005aef80ec6f79/Source:
09005aef80ec6f65
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PDF
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MT45W8MW16BGX-7013LWT
Abstract: MT45W8MW16 FBGA DECODER MT45W8MW16BGX
Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/ Page/Burst CellularRAM 1.5 Memory Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC
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128Mb:
MT45W8MW16BGX
09005aef80ec6f79/Source:
09005aef80ec6f65
MT45W8MW16BGX-7013LWT
MT45W8MW16
FBGA DECODER
MT45W8MW16BGX
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PDF
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Untitled
Abstract: No abstract text available
Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ • Random access time: 70ns
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128Mb:
MT45W8MW16BGX
09005aef80ec6f79/Source:
09005aef80ec6f65
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PDF
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cr1 5 p26z
Abstract: No abstract text available
Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ
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Original
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128Mb:
MT45W8MW16BGX
09005aef80ec6f79/Source:
09005aef80ec6f65
cr1 5 p26z
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PDF
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