Untitled
Abstract: No abstract text available
Text: Preliminary‡ 8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W512KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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Original
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MT45W512KW16BEGB
16-word
09005aef82e41987/Source:
09005aef82e419a5
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PDF
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smd code marking HD
Abstract: linear technology part numbering smd code Ub SMD MARKING CODE h5
Text: 8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W512KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
|
Original
|
MT45W512KW16BEGB
16-word
09005aef82e41987
09005aef82e419a5
smd code marking HD
linear technology part numbering
smd code Ub
SMD MARKING CODE h5
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PDF
|
Untitled
Abstract: No abstract text available
Text: 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
|
Original
|
MT45W256KW16BEGB
16-word
09005aef8329f3e3
09005aef82e419a5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary‡ 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
|
Original
|
MT45W256KW16BEGB
16-word
09005aef8329f3e3/Source:
09005aef82e419a5
|
PDF
|