ZC0204
Abstract: K1510 SMD MARKING CODE 221k smd marking ZC vitrohm resistors Marking Code SMD zc ZG0207 SMD ZC SMD MARKING CODE 24 Vitrohm
Text: VITROHM Series ZC SMD - Metal Film resistors MELF Style Specifications Type ZC0204 ZC0207 Style 0204 0207 0,25 0,4W for min. 8.000hrs 1,0 Nominal Power rating P70 W Resistance range Ω see next page E-series see next page Tolerance % Temperature coefficient
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ZC0204
ZC0207
000hrs)
ZC0204
K1510
SMD MARKING CODE 221k
smd marking ZC
vitrohm resistors
Marking Code SMD zc
ZG0207
SMD ZC
SMD MARKING CODE 24
Vitrohm
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T2D14
Abstract: vitrohm resistors Marking Code SMD zc K1510 ZC0207 zc smd ZC0204 smd marking ZC .zc smd SMD MARKING CODE 221k
Text: VITROHM Series ZC SMD - Metal Film resistors MELF Style Specifications Type ZC0204 ZC0207 Style 0204 0207 0,25 0,4W for min. 8.000hrs 1,0 Nominal Power rating P70 W Resistance range Ω see next page E-series see next page Tolerance Temperature coefficient
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1000h
ZC0204
000hrs)
ZC0207
T2D14
vitrohm resistors
Marking Code SMD zc
K1510
ZC0207
zc smd
smd marking ZC
.zc smd
SMD MARKING CODE 221k
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Vitrohm
Abstract: vitrohm resistors ZC0204 vitrohm 214
Text: VITROHM Series ZC SMD - Metal Film resistors MELF Style Specifications Type ZC0204 ZC0207 Style 0204 0207 0,25 0,4W for min. 8.000hrs 1,0 Nominal Power rating P70 W Resistance range Ω see next page E-series see next page Tolerance Temperature coefficient
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ZC0204
ZC0207
000hrs)
Vitrohm
vitrohm resistors
ZC0204
vitrohm 214
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502-0 vitrohm
Abstract: RWC 5020 rwp5020 RWN 5020 din 44050 CECC 00802 502-0 vitrohm resistor resistor smd 103 rwc5020 220R
Text: Series RWN / RWC SMD Power Resistors Specifications Type RWN 5020 Styles RWC 5020 5020 Dimensions mm Power ratingϑo = 200oC Single pulse I max. Ei, max Timp, max periodic pulse load imax non inductive, no winding W wirewound on ceramic P 25 2,2 P 40 2,0 P 70 1,6
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200oC
0R002
0R002,
0R003,
0R005,
502-0 vitrohm
RWC 5020
rwp5020
RWN 5020
din 44050
CECC 00802
502-0 vitrohm resistor
resistor smd 103
rwc5020
220R
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NiCr6015
Abstract: 502-0 vitrohm RWN 5020 RWC 5020 502-0 vitrohm resistor RWN5020 Yageo part marking Yageo smd resistor 10k 220R R003
Text: VITROHM Series RWN / RWC SMD Power Resistors Specifications Type RWN 5020 RWC 5020 Styles 5020 Dimensions mm Power ratingϑo = 200oC Single pulse I max. Ei, max Timp, max periodic pulse load imax non inductive, no winding wirewound on ceramic W P 25 2,2 P 40 2,0
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200oC
0R002
0R050
0R003,
0R005,
NiCr6015
502-0 vitrohm
RWN 5020
RWC 5020
502-0 vitrohm resistor
RWN5020
Yageo part marking
Yageo smd resistor 10k
220R
R003
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f7544
Abstract: 20 MHz SAW FILTER
Text: SAW Bandpass Filter F7544 Features z RF bandpass filter z High attenuation z Usable bandwidth 40MHz z No matching 50Ω single-ended operation z Ceramic Surface Mounted Device SMD Package 1.00±0.15 1.90±0.15 0.44 3.80±0.15 0.64±0.05 Package Dimensions
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F7544
40MHz
300mm/min
NR3012-AS03
f7544
20 MHz SAW FILTER
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240R
Abstract: RZI6720
Text: Series RZC / RZI SMD Precision Power Wirewound Resistors ceramic core, coated Specifications Type Power rating P25 P40 P70 RZC6720 STANDARD VERSION RZI6720 PULSE VERSION W Resistance range Ω Tolerances % 2,2 2,0 1,6 0R01 . 750R R02 . 240R ±5, ±2, ±1
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RZC6720
RZI6720
1000h)
240R
RZI6720
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RZI6720
Abstract: 240R
Text: Series RZC / RZI SMD Precision Power Wirewound Resistors ceramic core, coated Specifications Type Power rating P25 P40 P70 RZC6720 STANDARD VERSION RZI6720 PULSE VERSION W Resistance range Ω Tolerances % 2,2 2,0 1,6 0R01 . 750R R02 . 240R ±5, ±2, ±1
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RZC6720
RZI6720
1000h)
RZI6720
240R
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Vitrohm
Abstract: No abstract text available
Text: Series RZF SMD Power Wirewound Resistors Flame retardant, safety version Specifications Type RZF6720 SAFETY VERSION Power rating P25 P40 P70 W 2,2 2,0 1,6 Resistance range Ω see next page Tolerances % ± 5 Temperature coefficient 10-6 * K-1 120 ± 50 max. cont. work. voltage
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RZF6720
1000h)
100KOhm.
Vitrohm
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502-0 vitrohm
Abstract: rwf 50 interruption resistors rwf RWF Series 502-0 18 vitrohm RWS 315 Vitrohm VITROHM wirewound resistor resistor rwf
Text: Series RWF / RWS SMD Power Resistors flame retardant, fusible and safety versions Specifications Type RWF 5020 Fusible Styles RWS 5020 Safety 5020 wirewound on core Power rating W Resistance range Ω wirewound on ceramic P 25 2,2 P 40 2,0 P 70 1,6 1R 2 . 100R
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1000h)
502-0 vitrohm
rwf 50
interruption
resistors rwf
RWF Series
502-0 18 vitrohm
RWS 315
Vitrohm
VITROHM wirewound resistor
resistor rwf
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TQX6273
Abstract: simpson 464 Tele Quartz Group 16.384 MHz Tele Quarz Group Crystal Oscillator HC-49 crystal Tele Quarz Group 16.384 CT 9254 Telcona N1086 30227
Text: SIEMENS ICs for Communications Framing and Line Interface Component for PCM 30 and PCM 24 FALC54 and FALC-LH PEB 2254 PEB 2255 Crystal recommendation Application Note 12.97 PEB 2255 Revision History : Previous Version : None Page Page Current Version : 12.97
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FALC54
254-A
TQX6273
simpson 464
Tele Quartz Group 16.384 MHz
Tele Quarz Group Crystal Oscillator
HC-49 crystal
Tele Quarz Group 16.384
CT 9254
Telcona
N1086
30227
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FY632
Abstract: FW625
Text: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18D MT28C128564W18D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices
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128Mb
32Mb/64Mb
09005aef80b10a55
MT28C128564W18D
FY632
FW625
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices
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128Mb
32Mb/64Mb
MT28C128532W18/W30D
MT28C128564W18/W30D
77-Ball
09005aef80b10a55
MT28C128564W18D
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FW643
Abstract: FX639 FX649 FY631 FY627 w18 SMD smd transistor w18 w18 smd transistor FY651 FW649
Text: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices
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128Mb
32Mb/64Mb
MT28C128532W18/W30D
MT28C128564W18/W30D
77-Ball
09005aef80b10a55
MT28C128564W18D
FW643
FX639
FX649
FY631
FY627
w18 SMD
smd transistor w18
w18 smd transistor
FY651
FW649
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ecg semiconductors master replacement guide
Abstract: transistor SMD marked RNW th 20594 TRANSISTOR si 6822 MIL-STD-202F-201A CT 1975 sam transistors br 6822 sun hold ras 2410 relay TRANSISTOR SMD MARKING CODE jg Mist Ultrasonic Humidifier
Text: RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY 2. SEMICONDUCTOR RELIABILITY RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY Since its foundation, Mitsubishi Electric has been seeking a philosophy of extending the business and contributing the society with high
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6Bs smd transistor
Abstract: e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 RSV 1.6 ZE 36 163063 pcb connectors 6BS SMD 163953
Text: New in this catalogue Connectors BLZ AH Page 5/134 BLDT 5.08 6 Page 5/104 BLZF 5.08 and BLZF 5.00 SLZF 5.08 Page 5/107 Pages 5/103 and 5/124 Product overview connectors Heavy-duty connectors Modular Connector-System ConCept Rail-Adaptor-System DiRect Pages 5/2 - 5/23
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24/RS
DC-200
6Bs smd transistor
e 156176
smd code 6Bs
HDC-HE-16SS
crimp tools kit 163356
RSV 1.6 ZE 36
163063
pcb connectors
6BS SMD
163953
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ST72262G2
Abstract: smd transistor marking sp1 TRANSISTOR SMD MARKING CODE 2301 SDIP32 ST72260G ST72260G1 ST72262G ST72262G1 FR MARKING SMD TRANSISTOR ST72264G1
Text: ST72260G, ST72262G, ST72264G 8-BIT MCU WITH FLASH OR ROM MEMORY, ADC, TWO 16-BIT TIMERS, I2C, SPI, SCI INTERFACES • ■ ■ ■ ■ Memories – 4 K or 8 Kbytes Program memory: ROM or Single voltage extended Flash XFlash with read-out protection write protection and InCircuit Programming and In-Application Programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention: 20 years at
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ST72260G,
ST72262G,
ST72264G
16-BIT
ST72262G2
smd transistor marking sp1
TRANSISTOR SMD MARKING CODE 2301
SDIP32
ST72260G
ST72260G1
ST72262G
ST72262G1
FR MARKING SMD TRANSISTOR
ST72264G1
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smd code marking SP3
Abstract: ST72262G2 SDIP32 ST72260G ST72260G1 ST72262G ST72262G1 ST72264G ST72264G1 ST72264G2
Text: ST72260G, ST72262G, ST72264G 8-BIT MCU WITH FLASH OR ROM MEMORY, ADC, TWO 16-BIT TIMERS, I2C, SPI, SCI INTERFACES • ■ ■ ■ ■ Memories – 4 K or 8 Kbytes Program memory: ROM or Single voltage extended Flash XFlash with read-out protection write protection and InCircuit Programming and In-Application Programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention: 20 years at
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ST72260G,
ST72262G,
ST72264G
16-BIT
smd code marking SP3
ST72262G2
SDIP32
ST72260G
ST72260G1
ST72262G
ST72262G1
ST72264G
ST72264G1
ST72264G2
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class d Sinus inverter circuit diagram schematics
Abstract: ST72262G2 marking code g2b SMD smd g2b smd TRANSISTOR code marking 8K SDIP32 ST72260G ST72260G1 ST72262G ST72262G1
Text: ST72260G, ST72262G, ST72264G 8-BIT MCU WITH FLASH OR ROM MEMORY, ADC, TWO 16-BIT TIMERS, I2C, SPI, SCI INTERFACES • ■ ■ ■ ■ Memories – 4 K or 8 Kbytes Program memory: ROM or Single voltage extended Flash XFlash with read-out protection write protection and InCircuit Programming and In-Application Programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention: 20 years at
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ST72260G,
ST72262G,
ST72264G
16-BIT
class d Sinus inverter circuit diagram schematics
ST72262G2
marking code g2b SMD
smd g2b
smd TRANSISTOR code marking 8K
SDIP32
ST72260G
ST72260G1
ST72262G
ST72262G1
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Untitled
Abstract: No abstract text available
Text: ST7LITE20F2 ST7LITE25F2 ST7LITE29F2 8-bit microcontroller with single voltage Flash memory, data EEPROM, ADC, Timers, SPI Datasheet - production data Features • Memories – 8 Kbytes single voltage Flash Program memory with Read-out protection – In-circuit programming and in-application
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ST7LITE20F2
ST7LITE25F2
ST7LITE29F2
DIP20
DocID8349
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SR52
Abstract: FY618 SR-52
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SR52
FY618
SR-52
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SMD MARKING CODE AADV
Abstract: marking SR5 SMD MT28F1284W18 AADV
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for in-factory PROGRAM operation
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MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SMD MARKING CODE AADV
marking SR5 SMD
AADV
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MT28F1284W18
Abstract: smd codes marking A21 FY618
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for fast PROGRAM
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MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
smd codes marking A21
FY618
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BFP29
Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
Text: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700
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OCR Scan
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PDF
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fi23SbQS
001Sb74
O-117
BFT98B
BFT99A
BFR15A,
BFS55A,
BFP29
BFP35A
BFQ77
BFP17
BFQ57
BFQ58
BFT65
BFQ 58
SOT-89 smd marking CF
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