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    SMD L4 TRANSISTOR Search Results

    SMD L4 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD L4 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    capacitor 2200 uF

    Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750
    Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.


    Original     		PDF BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08

    transistor 2N2222 SMD

    Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
    Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980

    smd transistor marking L6 NPN

    Abstract: SMD TRANSISTOR L6 smd transistor marking l6 smd transistor marking l7 marking L6 npn smd L7 smd transistor L6 smd transistor SMD TRANSISTOR MARKING l4 smd sot23 marking l6 smd marking l5
    Text: Transistors SMD Type NPN Silicon Transistor 2SC1623 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 hFE = 200 TYP. 0.55 High DC Current Gain: +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 VCE = 6.0 V, IC = 1.0 mA +0.05 0.1-0.01 +0.1 0.97-0.1


    Original     		PDF 2SC1623 OT-23 smd transistor marking L6 NPN SMD TRANSISTOR L6 smd transistor marking l6 smd transistor marking l7 marking L6 npn smd L7 smd transistor L6 smd transistor SMD TRANSISTOR MARKING l4 smd sot23 marking l6 smd marking l5

    MGH80

    Abstract: TRANSISTOR SMD catalog AN98017 AN98020 AN98026 BLV909 SMD TRANSISTOR
    Text: APPLICATION NOTE 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz AN98020 Philips Semiconductors 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER BACKGROUND 4 AMPLIFIER PERFORMANCE


    Original     		PDF BLV909 AN98020 BLV909. SCA57 MGH80 TRANSISTOR SMD catalog AN98017 AN98020 AN98026 SMD TRANSISTOR

    smd-transistor DATA BOOK

    Abstract: SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6
    Text: APPLICATION NOTE 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz AN98018 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER DESCRIPTION


    Original     		PDF BLV2042 AN98018 BLV2042. 199lding SCA57 smd-transistor DATA BOOK SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6

    smd transistor A6

    Abstract: transistor SMD A6
    Text: DISCRETE SEMICONDUCTORS DAT M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain


    Original     		PDF M3D392 BLF647 OT540A SCA73 613524/03/pp16 smd transistor A6 transistor SMD A6

    rogers 5880

    Abstract: UT70-25 1008CS-102XKBC BLF647 transistor 2164 transistor 2001 H1 rf transistor smd pages 2222 595 smd transistor w1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 FEATURES PINNING - SOT540A • High power gain


    Original     		PDF M3D392 BLF647 OT540A SCA73 613524/03/pp16 rogers 5880 UT70-25 1008CS-102XKBC BLF647 transistor 2164 transistor 2001 H1 rf transistor smd pages 2222 595 smd transistor w1

    l14 254

    Abstract: AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026 BLV904
    Text: APPLICATION NOTE 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019 Philips Semiconductors 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz Application Note AN98019 INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The


    Original     		PDF BLV904 AN98019 BLV904 BLV904. OT409. SCA57 l14 254 AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026

    SMD TRANSISTOR L6

    Abstract: BLT80 philips Trimmer 60 pf KM10 KM10 transistor SMD ic catalogue smd transistor zi MRA775 L5 smd transistor TRANSISTOR SMD L3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 File under Discrete Semiconductors, SC08b 1996 May 02 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation


    Original     		PDF BLT80 SC08b OT223 OT223 MAM043 SMD TRANSISTOR L6 BLT80 philips Trimmer 60 pf KM10 KM10 transistor SMD ic catalogue smd transistor zi MRA775 L5 smd transistor TRANSISTOR SMD L3

    L05 SMD

    Abstract: w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286
    Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-770 : T. Buss : 20-Jan-00 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG410W Double Poly


    Original     		PDF RNR-T45-96-B-770 20-Jan-00 900MHz BFG410W BFG410W 900MHz. 900MHz CMP180 CMP210 L05 SMD w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286

    transistor bd139

    Abstract: bvc62 DK230 philips 2322 734 philips power transistor bd139 UT70-25 smd for bd139 smd L17 npn PNP UHF transistor BD139
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a 1996 Jul 26 Philips Semiconductors Product specification UHF linear push-pull power transistor


    Original     		PDF BLV859 SC08a OT262B BLV859 SCA51 127041/1200/02/pp16 transistor bd139 bvc62 DK230 philips 2322 734 philips power transistor bd139 UT70-25 smd for bd139 smd L17 npn PNP UHF transistor BD139

    bvc62

    Abstract: philips 2322 734 philips SMD resistor 805 philips resistor 2322-734 transistor bd139 2322 722 philips power transistor bd139 chip die npn transistor PNP UHF transistor pin configuration transistor BD139
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1996 Jul 26 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 PINNING SOT262B FEATURES


    Original     		PDF BLV859 OT262B BLV859 SCA51 127041/1200/02/pp16 bvc62 philips 2322 734 philips SMD resistor 805 philips resistor 2322-734 transistor bd139 2322 722 philips power transistor bd139 chip die npn transistor PNP UHF transistor pin configuration transistor BD139

    A7R SMD Transistor

    Abstract: ceramic capacitor 100nF 104 toyocom 10,7mhz TOKO CERAMIC FILTER 455 821 ceramic capacitor SMD TRANSISTOR L6 ceramic capacitor 100nF 50 smd transistor A1 philips ceramic capacitors smd CFT-455
    Text: AT86RF211 FSK Transceiver for ISM Radio Applications RF BOM vs. Application Requirements Introduction Components around RF transceivers can be classified into four families: • RF filtering of out-of-band high-level jamming such as pagers' Base Stations or


    Original     		PDF AT86RF211 5305B A7R SMD Transistor ceramic capacitor 100nF 104 toyocom 10,7mhz TOKO CERAMIC FILTER 455 821 ceramic capacitor SMD TRANSISTOR L6 ceramic capacitor 100nF 50 smd transistor A1 philips ceramic capacitors smd CFT-455

    CFT-455

    Abstract: ceramic capacitor 100nF 104 TOKO CERAMIC FILTER 455 0603 smd CAPACITOR TOKO 455KHz IF module toyocom 10,7mhz CFT-455B 821 ceramic capacitor smd t606 SMD resistors 1k ohm 0603
    Text: AT86RF211S FSK Transceiver for ISM Radio Applications - RF BOM vs. Application Requirements Introduction Components around RF transceivers can be classified into four families: • RF filtering of out-of-band high-level jamming such as pagers' Base Stations or


    Original     		PDF AT86RF211S AT86RF211S' 5305C CFT-455 ceramic capacitor 100nF 104 TOKO CERAMIC FILTER 455 0603 smd CAPACITOR TOKO 455KHz IF module toyocom 10,7mhz CFT-455B 821 ceramic capacitor smd t606 SMD resistors 1k ohm 0603

    PTF141501A

    Abstract: LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56
    Text: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent


    Original     		PDF PTF141501A PTF141501A a150-watt, LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56

    TEKELEC

    Abstract: 1800 ldmos sot540a transistor 2001 H1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D392 BLF647 BLF647 OT540A MBK777 budgetnum/printrun/ed/pp15 TEKELEC 1800 ldmos sot540a transistor 2001 H1

    CFT-455

    Abstract: CFT455 CFT-455B CFT455B SMD resistor 334 SIMID06-C EPCOS b3588 pFC29 transistor 313 smd L339
    Text: AT86RF211S FSK Transceiver for ISM Radio Applications - RF BOM vs. Application Requirements 1. Introduction Smart RF Series Components around RF transceivers can be classified into four families: • RF filtering of out-of-band high-level jamming such as pagers' Base Stations or


    Original     		PDF AT86RF211S AT86RF211S' 5305C CFT-455 CFT455 CFT-455B CFT455B SMD resistor 334 SIMID06-C EPCOS b3588 pFC29 transistor 313 smd L339

    L6 smd

    Abstract: smd L6 smd marking l5 marking L6 npn smd marking L6 MARKING L4 l6 marking smd SMD l4 2SC4177
    Text: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4177 Features High dc current gain High voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50 V


    Original     		PDF 2SC4177 100mA, -10mA L6 smd smd L6 smd marking l5 marking L6 npn smd marking L6 MARKING L4 l6 marking smd SMD l4 2SC4177

    22 pf TEKELEC

    Abstract: BLF647 transistor 2001 H1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 Mar 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D392 BLF647 BLF647 OT540A MBK777 budgetnum/printrun/ed/pp15 22 pf TEKELEC transistor 2001 H1

    circuit diagram of smps 400w DESKTOP

    Abstract: 400w power amplifier PCB layout L6562 400W AN1792 L6599 application note atx power supply 400W circuit diagram AN2485 l6599 400w l6563 l6561 400w 400W pwm smps schematic
    Text: AN2485 Application note 400 W FOT-controlled PFC pre-regulator with the L6563 Introduction This application note describes an evaluation board based on the Transition-mode PFC controller L6563 and presents the results of the bench evaluation. The board implements a


    Original     		PDF AN2485 L6563 L6563 EVAL6563-400W) circuit diagram of smps 400w DESKTOP 400w power amplifier PCB layout L6562 400W AN1792 L6599 application note atx power supply 400W circuit diagram AN2485 l6599 400w l6561 400w 400W pwm smps schematic

    1N5820 SMD

    Abstract: npn smd 2a SPP80N03L 10RJ ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a AM503B REGULATOR SMD 12V 1N5820 33PF AIC1569A
    Text: AN005 Users’Guide to AIC1569A Demoboard Abstract used for driving multiple MOSFETs in parallel The modern Personal PC demands fast processors operation. In order to reduce power dissipation and that current. to increase overall efficiency, MOSFETs should be


    Original     		PDF AN005 AIC1569A AIC1569A, F/16V PF/16V UF/16V 1N5820 SMD npn smd 2a SPP80N03L 10RJ ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a AM503B REGULATOR SMD 12V 1N5820 33PF

    10RJ

    Abstract: 80N30 1N5820 SMD 9310C npn smd 2a Diode smd 5H 1F transistor smd smd 1f AN97-005 SMD DIODE L4
    Text: AN97-005 Users’ Guide to AIC1569A Demoboard Ben Tai Abstract used for driving multiple MOSFETs in parallel The modern Personal PC demands fast processors operation. In order to reduce power dissipation and that current. to increase overall efficiency, MOSFETs should be


    Original     		PDF AN97-005 AIC1569A AIC1569A, 1mF/16V PF/16V UF/16V 10RJ 80N30 1N5820 SMD 9310C npn smd 2a Diode smd 5H 1F transistor smd smd 1f AN97-005 SMD DIODE L4

    358 SMD transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.


    Original     		PDF BLT80 BLT80 OT223 MAM043 cir2724825 SCDS48 127061/1200/02/pp12 771-BLT80-T/R 358 SMD transistor

    transistor smd 12p

    Abstract: transistor 12p smd smd transistor at t21 transistor smd t21 smd transistor 12p smd transistor 2x5 B7 smd transistor BLT81 transistor ft 960 smd 12p
    Text: Philips Semiconductors ^ 711Dfi5b D0b^3flg P12 BlPHIN Product specification UHF power transistor BLT81 QUICK REFERENCE DATA FEATURES RF performance at Ts < 60 °C in a common emitter test circuit note 1 . • SMD encapsulation MODE OF OPERATION f (MHz) CW class-B, narrow band


    OCR Scan     		PDF 711002b BLT81 OT223 MSC092 MRCQ89 transistor smd 12p transistor 12p smd smd transistor at t21 transistor smd t21 smd transistor 12p smd transistor 2x5 B7 smd transistor transistor ft 960 smd 12p