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    SMD JM TRANSISTOR Search Results

    SMD JM TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD JM TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GROUND BASED RADAR

    Abstract: transistor SMD R1D
    Text: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications


    Original     		PDF HVV1214-140 21DD1E) GROUND BASED RADAR transistor SMD R1D

    smd transistor HX

    Abstract: TRANSISTOR SMD MARKING CODE TK TRANSISTOR SMD MARKING CODE MP smd transistor HX 45 cdp68hc68 hc221 TRANSISTOR SMD MARKING CODE WM intersil standard part marking HIP SMD TRANSISTOR MARKING by 4p TRANSISTOR SMD MARKING CODES
    Text: Ordering Nomenclature Guides 2 2-3 Elantec TYPES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-4 5962 SMD/DSCC - QML TYPES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF 82CXXX -25oC -40oC -55oC 125oC JM38510/ 1-888-INTERSIL smd transistor HX TRANSISTOR SMD MARKING CODE TK TRANSISTOR SMD MARKING CODE MP smd transistor HX 45 cdp68hc68 hc221 TRANSISTOR SMD MARKING CODE WM intersil standard part marking HIP SMD TRANSISTOR MARKING by 4p TRANSISTOR SMD MARKING CODES

    transistor smd MJ 145

    Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
    Text: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter


    OCR Scan     		PDF q67042-s4131 np-60 transistor smd MJ 145 d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145

    smd transistor 43t

    Abstract: marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor BUZ102S smd code book transistor 43t SMD E3045 G1333
    Text: Infineon , m proved technologies BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current b CO Features 55 V 0.018


    OCR Scan     		PDF BUZ102S P-T0220-3-1 Q67040-S4011-A2 E3045A P-T0263-3-2 Q67040-S4011-A6 E3045 smd transistor 43t marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor smd code book transistor 43t SMD G1333

    Untitled

    Abstract: No abstract text available
    Text: CHIP PHOTO-TRANSISTOR CmSENSOR mum ’\ .* y 7 M 7 x ^ :ÿyyx$-c±miBi • Features 1. Developed as a chip type SMD phot-transistor for both reverse and top surface mounting 2. Small and square size, dim ensions : 3 ,2 L x 1.6(W)X1,1 (H)mm 2. ^- -Î;ïl3;3.e(L)xl.6(W)xl.i(H)


    OCR Scan     		PDF CPT-S30' 950nmlRftLcfc CL-200IR

    smd transistor 2Bs

    Abstract: GEm501 smd transistor 68t BLV2040
    Text: Philips Semiconductors Preliminary specification UHF power transistor BLV2040 FEATURES APPLICATIONS • Emitter ballasting resistors for optimum temperature profile • Common emitter class-AB operation in base stations in the 1800 to 1970 MHz frequency range.


    OCR Scan     		PDF BLV2040 OT409B OT409B 711Dfl5t GEm501 smd transistor 2Bs smd transistor 68t BLV2040

    kd smd transistor

    Abstract: smd transistor wc LG Philips LM 300 W 01
    Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level Insulated gate bipolar power transistor In a plastic envelope


    OCR Scan     		PDF BUK866-400 kd smd transistor smd transistor wc LG Philips LM 300 W 01

    lg smd transistor LF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level fleld-effect power transistor In a plastic envelope suitable for surface mounting using ’trench’ technology. The device


    OCR Scan     		PDF BUK7621-30 SQT404 lg smd transistor LF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O SPP20N60S5 smd diode sm i7 siemens 350 98 Q67040-S4751
    Text: SIEMENS SP P 20N 60S 5 SP B 20N 60S 5 Prelim inary data c’ D ,2 Cool MOS Power Transistor I I • New revolutionary high voltage technology / Í • Worldwide best R o s { o n in TO 220 i 0 -G ,1 S /T • Periodic avalanche proved • I ‘


    OCR Scan     		PDF SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 SPP20N60S5 SPB20N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O smd diode sm i7 siemens 350 98 Q67040-S4751

    VPT09051

    Abstract: VPT09050 SPD01N50M2 SPU01N50M2 DIODE MARKING CODE 623
    Text: In fin eon SPU01N50M2 SPD01N50M2 Target data sheet technologies Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/df rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPUx7N60S5/SPDx7N60S5 SPU01N50M2 SPD01N50M2 VPT09050 VPT09051 SPU01N50M2 P-T0251 01N50M2 Q67040-S4324 VPT09051 VPT09050 SPD01N50M2 DIODE MARKING CODE 623

    transistor 8BB smd

    Abstract: smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su BUZ100S smd DIODE 3FS H7 marking code smd smd transistor c015
    Text: BUZ 10OS In fin e o n technologie» SIPMOS Power Transistor Product Summary Features 55 V • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.015 Í2 77 A • dv/df rated


    OCR Scan     		PDF BUZ100S P-T0220-3-1 Q67040-S4001-A2 E3045A P-T0263-3-2 Q67040-S4001-A6 E3045 transistor 8BB smd smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su smd DIODE 3FS H7 marking code smd smd transistor c015

    diode gee a9

    Abstract: HTC one m7
    Text: SPP 47N10L Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.026 fl 47 A b 100 V • Logic Level


    OCR Scan     		PDF 47N10L SPP47N10L SPB47N10L P-T0220-3-1 Q67040-S4177 P-T0263-3-2 Q67040-S4176 S35bQ5 Q133777 SQT-89 diode gee a9 HTC one m7

    Transistor SMD SM 942

    Abstract: No abstract text available
    Text: SPD 30N03 I nf ineon tec h n o l og i « s SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current V 'd s f l D S o n fc> 30


    OCR Scan     		PDF 30N03 67040-S 144-A -T0251-3-1 146-A S35bQ5 Q133777 SQT-89 B535bQ5 Transistor SMD SM 942

    FDS 4800

    Abstract: smd transistor 9f8 smd marking 9T smd diode code 9T smd transistor H7 BUZ111SL TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B BUZ111 D133457
    Text: BUZ 111SL I nf ineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f l DS on 0.007 n A 80 t> Continuous drain current • Avalanche rated 55 V • Logic Level


    OCR Scan     		PDF 111SL BUZ111SL P-T0220-3-1 Q67040-S4002-A2 E3045A P-T0263-3-2 Q67040-S4002-A6 E3045 FDS 4800 smd transistor 9f8 smd marking 9T smd diode code 9T smd transistor H7 TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B BUZ111 D133457

    Untitled

    Abstract: No abstract text available
    Text: BSP 320S Infineon te c h n o lo g ¡« s SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 V f f DSion 0.12 Í2


    OCR Scan     		PDF BSP320S OT-223 Q67000-S4001 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    HS-OP470ARH

    Abstract: No abstract text available
    Text: HS-OP470ARH CB Radiation Hardened, Very Low Noise Quad Operational Amplifier February 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-OP470ARH is a radiation hardened, monolithic quad operational amplifier that provides highly reliable performance


    OCR Scan     		PDF HS-OP470ARH HS-OP470ARH HS-QP470ARH

    smd transistor 43t

    Abstract: buz1025 MARKING SMD 43t st smd diode marking code BUZ SMD DIODE BOOK smd marking wds P-T0263-3-2 infineon 3330 BUZ 1025 E304
    Text: Infineon , m proved te c h n o lo g ie s BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current CO Features 55 V ñ DS on 0.018 Í 2


    OCR Scan     		PDF BUZ102S BUZ102S P-T0220-3-1 Q67040-S4011-A2 E3045A P-T0263-3-2 Q67040-S4011-A6 E3045 smd transistor 43t buz1025 MARKING SMD 43t st smd diode marking code BUZ SMD DIODE BOOK smd marking wds infineon 3330 BUZ 1025 E304

    VPT09050

    Abstract: *08P06P transistor SMD 352
    Text: SIEM EN S SPD08P06P SPU08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated VPT09050 VPT09051 • dvldt rated • 175°C operating temperature Type SPD08P06P VDS -60 V b -8.8 A ^DSion 0.3 Q Pin 1 Pin 2 Pin 3


    OCR Scan     		PDF SPD08P06P SPU08P06P VPT09050 VPT09051 P-T0252 Q67040-S4153-A2 P-T0251-3-1 Q67040-S4154-A2 VPT09050 *08P06P transistor SMD 352

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Small-signal Transistors General THERMAL CONSIDERATIONS The elements of thermal resistance shown in Fig.8 are defined as follows: Thermal resistance Circuit performance and long-term reliability are affected by the temperature of the transistor die. Normally, both are


    OCR Scan     		PDF

    11n06

    Abstract: 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor
    Text: Philips Semiconductors Preliminary specification PHP11N06LT, PHB11N06LT, PHD11N06LT TrenchMOS transistor Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Vdss —55 V • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance


    OCR Scan     		PDF PHP11N06LT, PHB11N06LT, PHD11N06LT PHP11N06LT T0220AB) 11n06 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor

    Untitled

    Abstract: No abstract text available
    Text: SPD28N03 SPU28N03 SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche rated • övlöt rated • 175°C operating temperature Type ^DS SPD28N03 30 V b 28 A Pin 1 Pin 2 Pin 3 G D S Package f f DS on (à) VGS 0.023 Q, ^GS = 10 V P-T0252


    OCR Scan     		PDF SPD28N03 SPU28N03 Q67040-S4138-A2 P-T0252 P-T0251 Q67040-S4140-A2

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    OCR Scan     		PDF SQT404 BUK7615-100A

    SMD Transistor t30

    Abstract: transistor SMD t30
    Text: SPP 30N03L Infineon technologie» SIPMOS Power Transistor Product Summary Features V 30 Drain source voltage '/ ds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.018 n 30 A h • N channel • Logic Level


    OCR Scan     		PDF 30N03L SPP30N03L P-T0220-3-1 Q67040-S4737-A2 P-T0263-3-2 Q67040-S4143-A3 SPB30N03L S35bQ5 Q133777 SQT-89 SMD Transistor t30 transistor SMD t30

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • PHP21N06LT, PHB21N06LT PHD21N06LT QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Logic level compatible


    OCR Scan     		PDF PHP21N06LT, PHB21N06LT PHD21N06LT PHP21N06LT T0220AB) PHB21N06LT OT428 OT428