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    47N10L Search Results

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    47N10L Price and Stock

    Infineon Technologies AG SPP47N10L

    MOSFET N-CH 100V 47A TO220-3
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    DigiKey SPP47N10L Tube 1,500
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    Infineon Technologies AG SPI47N10L

    MOSFET N-CH 100V 47A TO262-3
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    DigiKey SPI47N10L Tube 500
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    Infineon Technologies AG SPB47N10L

    MOSFET N-CH 100V 47A TO263-3
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    DigiKey SPB47N10L Reel 1,000
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    ComSIT USA SPB47N10L 845
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    Siemens SPI47N10L

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    Bristol Electronics SPI47N10L 99
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    47N10L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    47N10L

    Abstract: transistor FS 22 SM 10 j50g SPB47N10L SPP47N10L
    Text: Preliminary Data SPP 47N10L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 100 V 47 A • Logic Level


    Original     		PDF 47N10L SPP47N10L P-TO220-3-1 Q67040-S4177 SPB47N10L P-TO263-3-2 Q67040-S4176 47N10L transistor FS 22 SM 10 j50g SPB47N10L SPP47N10L

    47N10L

    Abstract: smd diode code marking 33A SPP47N10L SPB47N10L SPI47N10L KJ SMD DIODE MARKING
    Text: Preliminary data 47N10L 47N10L,47N10L SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 RDS on 26 m ID 47 A P-TO263-3-2


    Original     		PDF SPI47N10L SPP47N10L SPB47N10L P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP47N10L Q67040-S4177 47N10L 47N10L smd diode code marking 33A SPB47N10L SPI47N10L KJ SMD DIODE MARKING

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    47N10L

    Abstract: SPI47N10L 47N10 SPB47N10L SPP47N10L
    Text: Preliminary data 47N10L 47N10L,47N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel VDS  Enhancement mode R DS on 26 m  Logic Level ID 47 A 175°C operating temperature P-TO262-3-1 P-TO263-3-2 100 V P-TO220-3-1  Avalanche rated


    Original     		PDF SPI47N10L SPP47N10L SPB47N10L P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP47N10L Q67040-S4177 47N10L 47N10L SPI47N10L 47N10 SPB47N10L

    diode gee a9

    Abstract: HTC one m7
    Text: SPP 47N10L Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.026 fl 47 A b 100 V • Logic Level


    OCR Scan     		PDF 47N10L SPP47N10L SPB47N10L P-T0220-3-1 Q67040-S4177 P-T0263-3-2 Q67040-S4176 S35bQ5 Q133777 SQT-89 diode gee a9 HTC one m7