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    SMD DIODE MARKING P2 Search Results

    SMD DIODE MARKING P2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD DIODE MARKING P2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ksd 168

    Abstract: No abstract text available
    Text: SDS2836E Semiconductor Switching Diode Features • • • • SMD package : SOT-523 Low forward voltage : VF=0.9V Typ. Fast reverse recovery time : trr=1.6ns(Typ.) Small total capacitance : CT=2.2pF(Typ.) Ordering Information Type No. Marking Package Code


    Original     		SDS2836E OT-523 SDS2836E OT-523 KSD-4004-000 ksd 168 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode FEATURE LBAS16HT1G ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. 1 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION


    Original     		LBAS16HT1G 3000/Tape LBAS16HT3G 10000/Tape PDF

    Untitled

    Abstract: No abstract text available
    Text: SDS2836EF Semiconductor Switching Diode Features • • • • SMD package : SOT-523F Low forward voltage : VF=0.9V Typ. Fast reverse recovery time : trr=1.6 ㎱(Typ.) Small total capacitance : CT=2.2 ㎊(Typ.) Ordering Information Type No. Marking SDS2836EF


    Original     		SDS2836EF OT-523F KSD-4001-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: SDS2836EF Semiconductor Switching Diode Features • • • • SMD package : SOT-523F Low forward voltage : VF=0.9V Typ. Fast reverse recovery time : trr=1.6 ㎱(Typ.) Small total capacitance : CT=2.2 ㎊(Typ.) Ordering Information Type No. Marking SDS2836EF


    Original     		SDS2836EF OT-523F SDS2836EF OT-523F KSD-4001-001 PDF

    MARK smd diode general semiconductor

    Abstract: SDP510Q
    Text: SDP510Q Semiconductor Pin Diode Features • • • • • SMD package : SOD-523 Low capacitance : CT=0.25pF Typ. Low series resistance : rs=1.5Ω(Typ.) VHF tuner band RF attenuator application AGC for FM tuner Ordering Information Type No. Marking Package Code


    Original     		SDP510Q OD-523 KSD-E004-003 MARK smd diode general semiconductor SDP510Q PDF

    marking CODE R SMD DIODE

    Abstract: MARKING CODE SMD IC MARKING SMD IC CODE SDP510Q
    Text: SDP510Q Semiconductor Pin Diode Features • SMD package : SOD-523 • Low capacitance : C T =0.25pF Typ. • Low series resistance : rs=1.5Ω(Typ.) • VHF tuner band RF attenuator application • AGC for FM tuner Ordering Information Type No. Marking Package Code


    Original     		SDP510Q OD-523 KSD-E004-003 100MHz marking CODE R SMD DIODE MARKING CODE SMD IC MARKING SMD IC CODE SDP510Q PDF

    4P04L04

    Abstract: IPP80P04P4L-04 4P04 IPI80P04P4L-04
    Text: IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4L-04 4P04L04 IPP80P04P4L-04 4P04 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 4P04L08 IPI70P04P4L-08 PDF

    4P04L08

    Abstract: IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 IPI70P04P4L-08 IPP70P04P4L-08 4P04L08 IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08 PDF

    4P0409

    Abstract: IPB70P04P4-09 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3
    Text: IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 9.1 mW ID -70 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI70P04P4-09 4P0409 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3 PDF

    146a marking diode

    Abstract: IPB80P03P4-05 PG-TO263-3-2 IPP80P03P4-05 ipi80p03p4-05 4p03 6V 100 smd diode
    Text: IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.7 mΩ ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P0305 IPI80P03P4-05 146a marking diode IPB80P03P4-05 PG-TO263-3-2 IPP80P03P4-05 ipi80p03p4-05 4p03 6V 100 smd diode PDF

    IPP120P04P4-04

    Abstract: 340ua IPI120P04P4-04 4P04
    Text: IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.5 mW ID -120 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4-04 IPP120P04P4-04 340ua 4P04 PDF

    IPB80P04P4-07

    Abstract: PG-TO262-3-1 S 6085 J 4P0407
    Text: IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.4 mW ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4-07 S 6085 J 4P0407 PDF

    4P0405

    Abstract: IPB80P04P4-05 ipi80p04p4-05 IPP80P04P4-05 PG-TO-220-3-1
    Text: Final Data Sheet IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.9 mW ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1


    Original     		IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4-05 4P0405 IPP80P04P4-05 PG-TO-220-3-1 PDF

    4P03L07

    Abstract: smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse
    Text: IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 6.9 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L07 IPI80P03P4L-07 4P03L07 smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse PDF

    4P03L04

    Abstract: 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l
    Text: IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.1 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L04 IPI80P03P4L-04 4P03L04 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l PDF

    4p03L11

    Abstract: 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03
    Text: IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 10.8 mΩ ID -45 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L11 IPI45P03P4L-11 4p03L11 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03 PDF

    4P04L03

    Abstract: IPP120P04P4L-03 IPB120P04P4L-03
    Text: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4L-03 4P04L03 IPP120P04P4L-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2) PDF

    IPB180P04

    Abstract: ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2) IPB180P04 ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4 PDF

    smd dual diode marking code AH sot-23

    Abstract: smd diode AH sot-23 smd diode A4 DIODE smd marking A4
    Text: Three Terminals SMD Switching Diode BAV70 Three Terminals SMD Switching Diode Features • Silicon Epitaxial Planar Diode • Fast Switching Dual Diode with Common Cathode • RoHS Compliant Mechanical Data SOT-23 SOT-23, Plastic Package Case: Terminals: Solderable per MIL-STD-202G, Method 208


    Original     		BAV70 OT-23 OT-23, MIL-STD-202G, smd dual diode marking code AH sot-23 smd diode AH sot-23 smd diode A4 DIODE smd marking A4 PDF

    smd diode ZENER marking code J3

    Abstract: smd zener diode code J1 smd zener diode code D5 Zener diode smd marking code w1 Zener diode smd marking h5 Zener diode smd marking e2 smd code C2 zener diode SMD ZENER DIODE E1 Diode smd code f4 smd zener diode code k2
    Text: SMD Zener Diode SMD Diodes Specialist CZRW5221B-G Thru CZRW5267B-G Voltage: 2.4 to 75 Volts Power: 500 mWatts RoHS Device Features SOD-123 For surface mounted applications. 0.152 3.85 0.140(3.55) 500mW Power Dissipation. Ideally suited for automated assembly


    Original     		CZRW5221B-G CZRW5267B-G OD-123 500mW OD-123, MIL-STD-750 QW-BZ018 CZRW5221B smd diode ZENER marking code J3 smd zener diode code J1 smd zener diode code D5 Zener diode smd marking code w1 Zener diode smd marking h5 Zener diode smd marking e2 smd code C2 zener diode SMD ZENER DIODE E1 Diode smd code f4 smd zener diode code k2 PDF

    Zener diode smd marking h5

    Abstract: smd zener diode code J1 smd zener diode code D5 Zener diode smd marking e2 Zener diode smd marking code w1 Diode smd code f4 Diode smd code f2 smd zener diode code k2 Zener diode smd marking J5 smd diode ZENER marking code J3
    Text: SMD Zener Diode SMD Diodes Specialist CZRW5221B-G Thru CZRW5267B-G Voltage: 2.4 to 75 Volts Power: 500 mWatts RoHS Device Features SOD-123 For surface mounted applications. 0.152 3.85 0.140(3.55) 500mW Power Dissipation. Ideally suited for automated assembly


    Original     		CZRW5221B-G CZRW5267B-G OD-123 500mW OD-123, MIL-STD-750 QW-BZ018 CZRW5221B Zener diode smd marking h5 smd zener diode code J1 smd zener diode code D5 Zener diode smd marking e2 Zener diode smd marking code w1 Diode smd code f4 Diode smd code f2 smd zener diode code k2 Zener diode smd marking J5 smd diode ZENER marking code J3 PDF

    smd zener diode code J1

    Abstract: Zener diode smd marking h5 Zener diode smd marking code w1 smd diode ZENER marking code J3 Zener diode smd marking e2 SMD ZENER DIODE E1 smd zener diode code h2 Zener diode smd marking J5 smd zener diode code D5 smd zener diode code k2
    Text: SMD Zener Diode SMD Diodes Specialist CZRW5221B-HF Thru CZRW5267B-HF Voltage: 2.4 to 75 Volts Power: 500 mWatts RoHS Device Features Halogen free. SOD-123 For surface mounted applications. 0.152 3.85 0.140(3.55) 500mW Power Dissipation. Ideally suited for automated assembly


    Original     		CZRW5221B-HF CZRW5267B-HF OD-123 500mW OD-123, MIL-STD-750 QW-HZ001 CZRW5221B smd zener diode code J1 Zener diode smd marking h5 Zener diode smd marking code w1 smd diode ZENER marking code J3 Zener diode smd marking e2 SMD ZENER DIODE E1 smd zener diode code h2 Zener diode smd marking J5 smd zener diode code D5 smd zener diode code k2 PDF