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    SMD DIODE MARKING 77 Search Results

    SMD DIODE MARKING 77 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SMD DIODE MARKING 77 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    philips zener diode c24

    Abstract: Zener diode smd marking code .18 C30 DIODE ZENER DIODE ZENER smd marking 72 Zener diode smd marking 22 iz c220 zener diode smd diode UM 35 DIODE smd marking code UM 31 philips zener diode c12 Zener diode smd marking code C24
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BZG01 series SMA voltage regulator diodes Product specification Supersedes data of 2000 Feb 17 2003 Mar 06 Philips Semiconductors Product specification SMA voltage regulator diodes BZG01 series FEATURES


    Original     		M3D168 BZG01 DO-214AC /imaging/BITTING/CPL/20030424/04232003 HTML04232003/BZG01-C10 May-06-2003 philips zener diode c24 Zener diode smd marking code .18 C30 DIODE ZENER DIODE ZENER smd marking 72 Zener diode smd marking 22 iz c220 zener diode smd diode UM 35 DIODE smd marking code UM 31 philips zener diode c12 Zener diode smd marking code C24 PDF

    3N0609

    Abstract: smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf
    Text: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88715 3N0609 smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf PDF

    2n0612

    Abstract: smd diode marking 77 ANPS071E IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 infineon 2n0612 SP0002-18173 SP0002-18172
    Text: IPB77N06S2-12 IPP77N06S2-12 OptiMOS Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 11.7 77 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 PG-TO220-3-1 SP0002-18173 2N0612 2n0612 smd diode marking 77 ANPS071E IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 infineon 2n0612 SP0002-18173 SP0002-18172 PDF

    3N0609

    Abstract: IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 diode marking code 77 3N060 3n06
    Text: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0609 IPI77N06S3-09 3N0609 IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 diode marking code 77 3N060 3n06 PDF

    Diode SMA marking code ye

    Abstract: smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL
    Text: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV04A5V0-HF Thru. TV04A441-HF Working Peak Reverse Voltage: 5.0 to 440 Volts Power Dissipation: 400 Watts RoHS Device Halogen Free SMA/DO-214AC Features - Glass passivated chip. 0.179 4.55 0.162(4.10)


    Original     		TV04A5V0-HF TV04A441-HF SMA/DO-214AC QW-JTV01 Diode SMA marking code ye smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL PDF

    smd code marking t5D

    Abstract: T5D SOT23 DIODE smd marking 821 t5d diode p5d diode
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD914 High-speed diode Product specification Supersedes data of 1996 Sep 18 1999 May 11 Philips Semiconductors Product specification High-speed diode PMBD914 FEATURES DESCRIPTION • Small plastic SMD package


    Original     		M3D088 PMBD914 PMBD914 MultiSOT23 smd code marking t5D T5D SOT23 DIODE smd marking 821 t5d diode p5d diode PDF

    Diode smd s6 68

    Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
    Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		GWM100-0085X1 IF110 ID110 A0-0085X1 100-085X1-SL 100-085X1-SMD 100-0085X1 100-0085X1 Diode smd s6 68 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77 PDF

    SMD MARKING code L1

    Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
    Text: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		180-004X2 IF110 ID110 1004X2 180-004X2-SL 180-004X2-SMD 180-004X2 SMD MARKING code L1 smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ PDF

    DIODE smd marking 702

    Abstract: diode smd marking code 421 DIODE SMD MARKING CODE 702 suppressor diode smd 5pha 5pfm 4008 SMD DIODE TV50C110K SMD MARKING CODE 529 308 smd marking
    Text: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV50C110-G Thru. TV50C441-G Working Peak Reverse Voltage: 11 to 440 Volts Power Dissipation: 5000 Watts RoHS Device Features DO-214AB SMC -Glass passivated chip. -5000W peak pulse power capability with a


    Original     		TV50C110-G TV50C441-G -5000W DO-214AB DO-214AB MIL-STD-750, QW-BTV14 DIODE smd marking 702 diode smd marking code 421 DIODE SMD MARKING CODE 702 suppressor diode smd 5pha 5pfm 4008 SMD DIODE TV50C110K SMD MARKING CODE 529 308 smd marking PDF

    DIODE smd marking 821

    Abstract: smd diode marking sm 34 smd diode 6F MCC SMD DIODE Diode smd code sm 97 diode SMD CODE sm 17 smd marking BLD Diode smd marking 44 st smd diode marking code marking 501 sod323
    Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB164 VHF variable capacitance diode Product specification 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES DESCRIPTION • High linearity The BB164 is a planar technology


    Original     		M3D049 BB164 OD323 BB164 DIODE smd marking 821 smd diode marking sm 34 smd diode 6F MCC SMD DIODE Diode smd code sm 97 diode SMD CODE sm 17 smd marking BLD Diode smd marking 44 st smd diode marking code marking 501 sod323 PDF

    SMD MARKING QG 6 PIN

    Abstract: smd diode code g4 SMD DIODE DEVICE sl smd diode marking 77 smd marking SL SMD diode NC All smd diode marking smd diode l2 smd diode S6 smd diode MARKING 03A
    Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		GWM100-0085X1 IF110 ID110 100-085X1-SMD 100-0085X1 100-0085X1 SMD MARKING QG 6 PIN smd diode code g4 SMD DIODE DEVICE sl smd diode marking 77 smd marking SL SMD diode NC All smd diode marking smd diode l2 smd diode S6 smd diode MARKING 03A PDF

    S4 42 DIODE

    Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
    Text: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		GWM100-0085X1 IF110 ID110 100-0085X1-SMD 100-0085X1 100-0085X1 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37 PDF

    S4 42 DIODE

    Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
    Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		GWM100-0085X1 ID110 IF110 100-0085X1 100-0085X1-SMD 100-0085X1 S4 42 DIODE smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37 PDF

    st smd diode marking code

    Abstract: BB178 st smd diode marking code C smd diode marking dr
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB178 VHF variable capacitance diode Product specification 1997 Nov 13 Philips Semiconductors Product specification FEATURES DESCRIPTION • Excellent linearity • Very low series resistance. The BB178 is a planar technology


    Original     		M3D319 BB178 OD523 SC-79) BB178 OD523 st smd diode marking code st smd diode marking code C smd diode marking dr PDF

    marking code e1 smd

    Abstract: schottky barrier double diode smd SOT363 smd code 22 SOT363
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAS70-07S Schottky barrier double diode Product specification Supersedes data of 1998 Jul 10 2003 Apr 11 Philips Semiconductors Product specification Schottky barrier double diode BAS70-07S FEATURES


    Original     		MBD128 BAS70-07S OT363 SC-88) MSA370 BAS70-07S BAS7007S marking code e1 smd schottky barrier double diode smd SOT363 smd code 22 SOT363 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC SMD Type P-Channel 20V DS MOSFET UI2321DS K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS(ON) < 50m RDS(ON) < 65m 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 (VGS = -2.5V) +0.1 0.97-0.1 RDS(ON) < 120m (VGS = -10V)


    Original     		OT-23 PDF

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code PDF

    z12 smd code sot23

    Abstract: SMD MARKING code 613 sot23 smd code Z70 SMD marking Z4 SMD MARKING CODE Z2 smd code z16 Y11 smd code smd z17 z67 smd marking Z58
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BZX84 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 18 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation:


    Original     		M3D088 BZX84 BZX84-A) BZX84-B) BZX84-C) BZX84-C11 BZX84-C12 BZX84-C13 BZX84-C6V8 BZX84-C15 z12 smd code sot23 SMD MARKING code 613 sot23 smd code Z70 SMD marking Z4 SMD MARKING CODE Z2 smd code z16 Y11 smd code smd z17 z67 smd marking Z58 PDF

    smd diode marking 77

    Abstract: smd diode "marking 77" marking 77 BAS70-07 Schottky diode low voltage smd marking ms diode smd 410
    Text: Diodes SMD Type Schottky Barrier Double Diodes BAS70-07 Unit: mm Features Low forward voltage High breakdown voltage Guard ring protected Small plastic SMD package Low diode capacitance. Absolute Maximum Ratings Ta = 25 MAX Unit continuous reverse voltage


    Original     		BAS70-07 smd diode marking 77 smd diode "marking 77" marking 77 BAS70-07 Schottky diode low voltage smd marking ms diode smd 410 PDF

    SOD87 footprint

    Abstract: zener diode voltage list List of Zener diode sod87 diode snubber smd diode marking 77 Diode zener smd d8 philips zener diode smd glass diode sod-87
    Text: SOD87 hermetically sealed, for rectifiers and voltage regulators surface-mount glass package Philips Semiconductors continues to lead the way in cuttingedge package options which meet demands for ever greater performance from continually smaller housings.With the


    Original     		PDF

    A18E smd

    Abstract: A18E
    Text: MOSFET IC SMD Type P-Channel Enhancement Mode Power MOSFET AO3401 SOT-23-3 Unit: mm • Features +0.2 2.9-0.2 +0.1 0.4-0.05 ● VDS V = -30V (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 1 ● RDS(ON) ＜ 120mΩ (VGS = -2.5V) 0.55 50m +0.2 1.6 -0.1 RDS(ON) +0.2


    Original     		OT-23-3 A18E smd A18E PDF

    BAS70-05

    Abstract: BAS70-07 BAS70 BAS70-04 BAS70-06 SMD DIODE bas70
    Text: Diodes SMD Type Schottky barrier double diodes BAS70 series SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High breakdown voltage 0.55 Low forward current 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Guard ring protected +0.05 0.1-0.01


    Original     		BAS70 OT-23 BAS70 BAS70-04 BAS70-05 BAS70-06 BAS70-07 BAS70-05 BAS70-07 BAS70-04 BAS70-06 SMD DIODE bas70 PDF

    JPP-95

    Abstract: t3.15A/250V optocoupler 356T TEA1733 smd diode MARKING U3 SOD123 2KBP206G NCC KY NCC kmg smd diode GW t3.15A/250V fuse
    Text: UM10385 GreenChip 65 W TEA1733 L T demo board Rev. 02 — 2 June 2010 User manual Document information Info Content Keywords Notebook adapter, TEA1733(L)T, Low standby power, High efficiency, fixed frequency flyback, jitter Abstract This manual provides the specification, schematics, and Printed-Circuit


    Original     		UM10385 TEA1733 JPP-95 t3.15A/250V optocoupler 356T smd diode MARKING U3 SOD123 2KBP206G NCC KY NCC kmg smd diode GW t3.15A/250V fuse PDF

    hm marking smd DIODE

    Abstract: diode marking smd 7c
    Text: RB401D Diode, Schottky barrier, surface mount These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Dimensions Units : mm 2 .9± 0.2 Features • available in SMD3 (SMD, SC-59) package (similar to SOT-23) • part marking, D3U


    OCR Scan     		RB401D SC-59) OT-23) RB401D 001S4flG hm marking smd DIODE diode marking smd 7c PDF