DIODE smd marking 702
Abstract: No abstract text available
Text: SMD Zener Diode CZRC5333B-G Thru CZRC5388B-G Voltage: 3.3 to 200 Volts Power: 5 Watts RoHS Device Features SMC/DO-214AB -Glass passivated chip. -Low leakage. 0.280 7.02 0.260(6.52) -Built-in strain relief. -Low inductance. -High peak reverse power dissipation.
|
Original
|
PDF
|
CZRC5333B-G
CZRC5388B-G
SMC/DO-214AB
DO-214AB
MIL-STD-750
QW-BZ026
CZRC5388B-G
DO-214AB
DIODE smd marking 702
|
Untitled
Abstract: No abstract text available
Text: Rectiier Diode Surface Mounting Device Single Diode OUTLINE M1FE40 400V 2A • • • Unit : mm Weight : 0.027g typ. Package M1F 2.8 カソードマーク Cathode mark ① SMD E88 1.8 ＋① ②− ② ロット記号（例） Date code 品名略号 Type No.
|
Original
|
PDF
|
M1FE40
J534-1
|
smd diode marking JC
Abstract: SMD MARKING CODE 103 SMD MARKING CODE 2A DIODE SMD 10A smd diode marking code 2a smd diode marking 2a SMD MARKING CODE 39 diode smd marking BUF SMD DIODE MARKING 14 smd diode marking ja
Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M1FE40 Unit : mm Weight : 0.027g （typ.） Package：M1F 400V 2A 2.8 カソードマーク Cathode mark 特長 E88 ① • 小型 SMD • 耐湿性に優れ高信頼性
|
Original
|
PDF
|
M1FE40
J534-1
smd diode marking JC
SMD MARKING CODE 103
SMD MARKING CODE 2A
DIODE SMD 10A
smd diode marking code 2a
smd diode marking 2a
SMD MARKING CODE 39
diode smd marking BUF
SMD DIODE MARKING 14
smd diode marking ja
|
schottky diode cross reference
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYL1525CT, PBYL1525CTB series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance
|
Original
|
PDF
|
PBYL1525CT,
PBYL1525CTB
PBYL1525CT
O220AB)
OT404
525CTB
schottky diode cross reference
|
74118
Abstract: PBYR1525CT pbyr1525 SMD 547 DIODE TJ-108 DT138
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYL2525CT, PBYL2525CTB series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance
|
Original
|
PDF
|
PBYL2525CT,
PBYL2525CTB
PBYL2525CT
O220AB)
OT404
YL2525CTB
74118
PBYR1525CT
pbyr1525
SMD 547 DIODE
TJ-108
DT138
|
smd diode marking code t3
Abstract: SMD 547 DIODE SCHOTTKY DIODES CROSS REFERENCE
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYL1525CT, PBYL1525CTB series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance
|
Original
|
PDF
|
PBYL1525CT,
PBYL1525CTB
PBYL1525CT
O220AB)
OT404
YL1525CTB
smd diode marking code t3
SMD 547 DIODE
SCHOTTKY DIODES CROSS REFERENCE
|
cd 40118
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1045CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA
|
Original
|
PDF
|
PBYR1045CTD
OT428
OT428
cd 40118
|
cd 40118
Abstract: d 132 smd code diode schottky diode cross reference
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1045CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA
|
Original
|
PDF
|
PBYR1045CTD
OT428
OT428
PBYR1040CTD
cd 40118
d 132 smd code diode
schottky diode cross reference
|
10n03l
Abstract: 10N03 smd diode 36A IPB10N03L diode 73a IPP10N03L IPB10N03L SMD Q67042-S4040
Text: IPP10N03L IPB10N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature N-Channel Logic Level Low on-resistance RDS on Excellent Gate Charge x RDS(on) product (FOM) VDS 30 RDS(on) max. SMD version 8.9 m ID 73 A P-TO263-3-2
|
Original
|
PDF
|
IPP10N03L
IPB10N03L
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67042-S4040
10N03L
P-TO263-3-2
10n03l
10N03
smd diode 36A
IPB10N03L
diode 73a
IPP10N03L
IPB10N03L SMD
Q67042-S4040
|
2n08l07
Abstract: 67a smd 2N08L07 POWER "2N08L07" smd diode 67A smd code "67A" 2n08l07 marking diode um 67A Q67060-S6016 smd 67a
Text: SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS N-Channel RDS on Enhancement mode max. SMD version ID Logic Level P- TO263 -3-2 175°C operating temperature V 6.8 m 80 A P- TO220 -3-1 Avalanche rated dv/dt rated
|
Original
|
PDF
|
SPP80N08S2L-07
SPB80N08S2L-07
Q67060-S6015
Q67060-S6016
2N08L07
BSPP80N08S2L-07
BSPB80N08S2L-07,
67a smd
2N08L07 POWER
"2N08L07"
smd diode 67A
smd code "67A"
2n08l07 marking
diode um 67A
Q67060-S6016
smd 67a
|
2n08l07
Abstract: 67a smd 2N08L07 POWER 2n08l 2n08l07 marking smd diode 67A s6015 ANPS071E SPB80N08S2L-07 SPP80N08S2L-07
Text: SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS Power-Transistor Product Summary Feature 75 VDS N-Channel RDS on Enhancement mode max. SMD version ID Logic Level P- TO263 -3-2 175°C operating temperature V 6.8 m 80 A P- TO220 -3-1 Avalanche rated dv/dt rated
|
Original
|
PDF
|
SPP80N08S2L-07
SPB80N08S2L-07
Q67060-S6015
Q67060-S6016
2N08L07
BSPP80N08S2L-07
BSPB80N08S2L-07,
2n08l07
67a smd
2N08L07 POWER
2n08l
2n08l07 marking
smd diode 67A
s6015
ANPS071E
SPB80N08S2L-07
SPP80N08S2L-07
|
Untitled
Abstract: No abstract text available
Text: Preliminary data IPI09N03LA IPP09N03LA,IPB09N03LA OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters N-Channel Logic Level Excellent Gate Charge x RDS on product (FOM) Very low on-resistance RDS(on) P- TO262 -3-1
|
Original
|
PDF
|
IPI09N03LA
IPP09N03LA
IPB09N03LA
IPP09N03LA
Q67042-S4153
09N03LA
Q67042-S4151
|
09n03la
Abstract: IPB09N09LA IPP09N03LA 09n03 Q67042-S4152 Q67042-S4153 09n03l
Text: Preliminary data IPI09N03LA IPP09N03LA,IPB09N09LA OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters N-Channel Logic Level Excellent Gate Charge x RDS on product (FOM) Very low on-resistance RDS(on) P- TO262 -3-1
|
Original
|
PDF
|
IPI09N03LA
IPP09N03LA
IPB09N09LA
IPB09N09LA
09N03LA
09N03LA
Q67042-S4153
09n03
Q67042-S4152
09n03l
|
smd diode ss
Abstract: No abstract text available
Text: LSP6501 1.6A, 1.3MHz, Boost DC-DC Converter With Internal Switch GENERAL DESCRIPTION FEATURES The LSP6501 is a current mode step up converter that can carry out 1.6A. LSP6501 also builds up a internal switch with 0.23Ω to provide a high efficient regulator with fast response. The
|
Original
|
PDF
|
LSP6501
LSP6501
640KHz
smd diode ss
|
|
|
Schottky Diode 40V 2A
Abstract: LSP6501 marking A304 a304 8pin A304 portable dvd player POWER SWITCH smd diode ss NR4018-100M Ss 24 DIODE SMD 640KHZ
Text: LSP6501 1.6A, 1.3MHz, Boost DC-DC Converter With Internal Switch GENERAL DESCRIPTION FEATURES The LSP6501 is a current mode step up converter that can carry out 1.6A. LSP6501 also builds up a internal switch with 0.23Ω to provide a high efficient regulator with fast response. The
|
Original
|
PDF
|
LSP6501
LSP6501
640KHz
026BSC
65BSC
Schottky Diode 40V 2A
marking A304
a304 8pin
A304
portable dvd player POWER SWITCH
smd diode ss
NR4018-100M
Ss 24 DIODE SMD
|
05N03LA
Abstract: Q67042-S4141 IPB05N03LA IPI05N03LA IPP05N03LA D55 SMD CODE MARKING 05N03L
Text: IPB05N03LA IPI05N03LA, IPP05N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 4.6 mΩ ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)
|
Original
|
PDF
|
IPB05N03LA
IPI05N03LA,
IPP05N03LA
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Q67042-S4141
05N03LA
05N03LA
Q67042-S4141
IPB05N03LA
IPI05N03LA
IPP05N03LA
D55 SMD CODE MARKING
05N03L
|
05N03L
Abstract: No abstract text available
Text: IPB05N03LA IPI05N03LA, IPP05N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 4.6 mW ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)
|
Original
|
PDF
|
IPB05N03LA
IPI05N03LA,
IPP05N03LA
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
IPI05N03LA
P-TO263-3-2
05N03L
|
09n03la
Abstract: No abstract text available
Text: IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 8.9 mW ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)
|
Original
|
PDF
|
IPB09N03LA
IPI09N03LA,
IPP09N03LA
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
IPI09N03LA
P-TO263-3-2
09n03la
|
09n03la
Abstract: 09N03 IPB09N03LA 09N03LA equivalent Q67042-S4151 TRANSISTOR SMD MARKING CODE 42 IPI09N03LA IPP09N03LA smd code D50 09n03l
Text: IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 8.9 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)
|
Original
|
PDF
|
IPB09N03LA
IPI09N03LA,
IPP09N03LA
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Q67042-S4151
09N03LA
09n03la
09N03
IPB09N03LA
09N03LA equivalent
Q67042-S4151
TRANSISTOR SMD MARKING CODE 42
IPI09N03LA
IPP09N03LA
smd code D50
09n03l
|
d 132 smd diode
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 DF20JC10 Unit-mm Weight 1.5g Typ 10.2 100V 20A Feature • SMD • <SlR=0.7mA • SMD • S iy R T È Î E iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG
|
OCR Scan
|
PDF
|
STO-220
DF20JC10
dio25
d 132 smd diode
|
Untitled
Abstract: No abstract text available
Text: P h ilips Sem iconductors Product specification High-speed diode BAS55 FEATURES DESCRIPTION • Small plastic SMD package The BAS55 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23
|
OCR Scan
|
PDF
|
BAS55
BAS55
wit25
|
hm marking smd DIODE
Abstract: DF20JC10 TC121 SHINDENGEN DIODE DIODE marking VU
Text: Schottky Barrier Diode Twin Diode mnm DF20JC10 o u tlin e 100V 20A Feature • SM D • SMD • filR = 0 .7 m A • L o w lR =0.7m A • jw is æ ç ë c u ic < L ' • Resistance for thermal run-away • High lo Rating -Small-PKG • y -S P C .L C D t-^ ^
|
OCR Scan
|
PDF
|
DF20JC10
STO-220
J532-1)
hm marking smd DIODE
DF20JC10
TC121
SHINDENGEN DIODE
DIODE marking VU
|
10SC4
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode l ^ t l l OUTLINE Package : E-pack DE10SC4 Unit: mm Weight 0.326tf Typ 4 0 V 10 A Feature G6 • SM D • SMD • P rrsm 7 ' K 5 > î / x (SSE • Prrsm Rating Type wo I H igh lo R a tin g -S m a ll-P K G 10SC4 p -/Hü»XM
|
OCR Scan
|
PDF
|
DE10SC4
326tf
10SC4
or10ms
J532-1)
10SC4
|
Diode marking m7
Abstract: smd m7 smd marking 5G DF10SC6
Text: Schottky Barrier Diode Twin Diode m tm m o u t lin e DF10SC6 60 V 10A Feature • SMD • SM D • PRRSMÿ7/ ' C 5 > î / x < S l I • P brsm R ating Main Use • S w itc h in g R eg u la to r • DC/DC n y K —5> • D C /D C C o n v e rte r • m m . • r - A .o A tin
|
OCR Scan
|
PDF
|
DF10SC6
STO-220
J532-1)
Diode marking m7
smd m7
smd marking 5G
DF10SC6
|
