SFH6112
Abstract: Siemens optocoupler sfh610 SFH610 Siemens optocoupler sfh610A SFH611A-4 SFH6186T-3 Siemens sfh615 optocoupler SFH611-3 SFH611A-3 sfh610 equivalent
Text: SFH6106T SFH6116T SFH6156T SFH6186T SFH6206T SFH6286T SIEM EN S 5883 5.3 kV TRIOS HIGH RELIABILITY OPTOCOUPLERS FEATURES • SMD Versions of SFH610, 611,615,618, 620,628 • Available on Tape and Reel Suffix T • TRIOS — tansparent lOn Shield Package Dimensions in Inches (mm)
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SFH6106T
SFH6116T
SFH6156T
SFH6186T
SFH6206T
SFH6286T
SFH610,
SFH6106T,
6116T,
6156T,
SFH6112
Siemens optocoupler sfh610
SFH610
Siemens optocoupler sfh610A
SFH611A-4
SFH6186T-3
Siemens sfh615 optocoupler
SFH611-3
SFH611A-3
sfh610 equivalent
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smd transistor WF
Abstract: No abstract text available
Text: SFH618A/628A SIEMENS PHOTOTRANSISTOR, 5.3 kV TRIOS LOW CURRENT INPUT OPTOCOUPLER P a c k a g e D im e n sio n s in In ch e s m m .*T ^ l FEATURES • Very High CTR at lF=1 mA, VCE=0.5 V - SFH618A-2, 6 3 -1 2 5 % - S F H 618A -3,100-200% - S F H 618A -4,160-320%
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SFH618A/628A
SFH618A-2,
SFH618A-5,
SFH628A-2,
SFH618A,
SFH628A,
smd transistor WF
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SFH61BA-5
Abstract: 628A SFH62BA-2 Diode SMD SJ 05
Text: SFH618A/628A SIEMENS PHOTOTRANSISTOR, 5.3 kV TRIOS LOW CURRENT INPUT OPTOCOUPLER FEATURES • Very High CTR at lF=1 mA, VCE=0.5 V • SFH618A-2, 63-125% SFH61 B A -3,100-200% S F H 618A -4,160-320% SFH61BA-S, 250-500% SFH62BA-2, 63-200% S FH 628A -3,100-320%
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SFH618A/628A
SFH618A-2,
SFH61
SFH61BA-S,
SFH62BA-2,
SFH618A,
SFH628A,
SFH61BA-5
628A
SFH62BA-2
Diode SMD SJ 05
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UMSH-3112JNV-1G
Abstract: smd zener diode mark J2 RFID Entry Door Lock Access Control System DS00710 IND-AIR-10-00189-500V-PTH AN1024 Transponder TPX buzzer CC 1206 umsh SMD SOT23 transistor MARK Y1
Text: AN1024 PKE System Design Using the PIC16F639 Author: Youbok Lee, Ph.D. Microchip Technology Inc. INTRODUCTION Hands-free Passive Keyless Entry PKE is quickly becoming mainstream in automotive remote keyless entry applications and is a common option on new
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AN1024
PIC16F639
posse36-4803
DS01024B-page
UMSH-3112JNV-1G
smd zener diode mark J2
RFID Entry Door Lock Access Control System
DS00710
IND-AIR-10-00189-500V-PTH
AN1024
Transponder TPX
buzzer CC 1206
umsh
SMD SOT23 transistor MARK Y1
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH610A/611A/615A/617A 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY FEATURES • High Current Transfer Ratios at 10 mA: 40-3 20% at 1 mA: 60% typical >13 Low CTR Degradation Good CTR Linearity Depending on Forward Current W ithstand Test Voltage, 5300 VACRMS
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SFH610A/611A/615A/617A
SFH6106/16/56
SFH610/11
/15/17A
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mcp60221
Abstract: IND-AIR-10-00189-500V-PTH UMSH-3112JNV-1G FAIRCHILD 1n5819 SMD diode Zener 5.1V UNITED RADIANT UMSH-3112JNV-1G yageo 1206 smd 1N5819 smd diode buzzer CC 1206 smd diode B3 SOT23
Text: AN1024 使用 PIC16F639 的 PKE 系统设计 作者： Youbok Lee, Ph.D. Microchip Technology Inc. 引言 免持式被动无钥门禁 （Passive Keyless Entry， PKE） 正迅速成为汽车远程无钥门禁应用的主流，并成为新型 汽车的普遍选择。使用该系统时，无需用手按发送器按
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AN1024
PIC16F639
PIC16F639
mcp60221
IND-AIR-10-00189-500V-PTH
UMSH-3112JNV-1G
FAIRCHILD 1n5819 SMD diode
Zener 5.1V
UNITED RADIANT UMSH-3112JNV-1G
yageo 1206 smd
1N5819 smd diode
buzzer CC 1206
smd diode B3 SOT23
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30N60
Abstract: No abstract text available
Text: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO
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IXGH30N60BU1
IXGH30N60BU1S
O-247
30N60BU1S)
IXGH3QN60BU1
IXGH30N6QBU1S
30N60
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IXSH24N60A
Abstract: No abstract text available
Text: □ IXYS HiPerFAST IGBT with Diode / IXSH24N60U1S IXSH24N60U1 IXSH24N60AU1 / IXSH24N60AU1S V CES ^C25 V C E sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V v CGR T d = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i
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IXSH24N60U1S
IXSH24N60U1
IXSH24N60AU1
IXSH24N60AU1S
24N60U1
24N60AU1
24N60U1S
24N60AU1S
IXSH24N60A
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Untitled
Abstract: No abstract text available
Text: IXGH 12N100U1 IXGH 12N100AU1 Low VCE sat IGBT with Diode High Speed IGBT with Diode VCES ^C25 V ¥ CE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V TO-247 SMD* E Symbol Test Conditions v CES VcOR Td = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M H VGES v SBB
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12N100U1
12N100AU1
O-247
O-247
-247S
12N100
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smd diode 819
Abstract: 30n60
Text: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO
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IXGH30N60BU1
IXGH30N60BU1S
O-247
30N60BU1S)
typ200
B2-58
smd diode 819
30n60
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smd diode 819
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C
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IXGH32N60AU1
IXGH32N60AU1S
O-247
32N60AU1S)
IXGH32N60AU1
IXQH32N60AU1S
XGH32N60AU1
smd diode 819
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TO-247 Package y
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S V CES 600 V 60 A 1.8 V 130 ns ^C25 V CE sat Combi Pack TO-247 SMD (30N60BU1S) m Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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IXGH30N60BU1
IXGH30N60BU1S
O-247
TO-247 Package y
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IXGH24N60BU1
Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1
Text: DIXYS Prelim inary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600
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IXGH24N50BU1
IXGH24N60BU1
24N50
24N60
24N50
HIPERFAST IGBT WITH DIODE
24N60
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24N60AU1
Abstract: 24n80
Text: HiPerFAST IGBT with Diode IXSH24N60U1/IXSH24N60U1S IXSH24N60 AU1 /IXSH24N60 All 1S v CES ^C25 V v CE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SO A Capability Symbol Test Conditions V v CGR Tj = 25°C to 150°C Tj = 25°C to 150°C; ROE = 1 M ii
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IXSH24N60U1/IXSH24N60U1S
IXSH24N60
/IXSH24N60
O-247
24N60U1
24N60U1S
24N60U1
24N69AU1
24N60U1S
24W6QAU1S
24N60AU1
24n80
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32N60BU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C
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32N60BU1
32N60BU1S
O-247
B2-77
B2-78
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smd diode UJ 64 A
Abstract: cz 017 v3
Text: □IX Y S Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode tfi Test Conditions VCES Tj = 25 °C to 150°C 600 V V CGR Tj = 25 °C to 150°C; RGE = 1 M ii 600 V v GES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25 °C ^C90
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IXGH32N60BU1
IXGH32N60BU1S
O-247
4bflb22b
smd diode UJ 64 A
cz 017 v3
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40N30BD1
Abstract: No abstract text available
Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o
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IXGH40N30BD1
IXGH40N30BD1S
O-247SMD
40N30BD1S)
O-247
360VTj
40N30BD1
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IXGH32N60AU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90
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32N60AU1
32N60AU1S
4b6b22b
IXGH32N60AU1
IXGH32N60AU1S
4bflb22b
0003bQb
IXGH32N60AU1
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.24n50
Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
Text: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C
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IXGH24N50BU1
IXGH24N60BU1
T0-247
24N50
24N60
.24n50
xgh2
IXGH24N60BU1
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SMD Transistor 1f
Abstract: 10v ZENER DIODE 100w audio amplifier circuit diagram class D 100w audio amplifier pcb 100w mosfet audio amplifier circuit diagram 100W sub amplifier 100w audio amplifier circuit diagram per channel 12v 100w amplifier 12v 100w AUDIO AMPLIFIER CIRCUIT 100w audio amplifier circuit diagram
Text: ZXCD100MOEVAL 100W CLASS D AUDIO AMPLIFIER EVALUATION BOARD DESCRIPTION FEATURES • Class D architecture The ZXCD100MOEVAL evaluation board is based on the ZXCD1000 Class D audio amplifier solution from Zetex. This board allows the user to evaluate the high
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ZXCD100MOEVAL
ZXCD100MOEVAL
ZXCD1000
SMD Transistor 1f
10v ZENER DIODE
100w audio amplifier circuit diagram class D
100w audio amplifier pcb
100w mosfet audio amplifier circuit diagram
100W sub amplifier
100w audio amplifier circuit diagram per channel
12v 100w amplifier
12v 100w AUDIO AMPLIFIER CIRCUIT
100w audio amplifier circuit diagram
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH61OA/611A/615A/617A 5.3 kV TRIOS Optocoupter High Reliability FEATURES • High Current Transfer Ratios at 10 mA: 40-320% al 1 mA: 60% typical >13 • Low CTR Degradation • Good CTR Linearity Depending on Forward Currant • WtthMarKl Tent Voltnp*, $300VACrms
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SFH61OA/611A/615A/617A
300VACrms
SFH6106/16/56
SFH61XA
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32N50
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C
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32N50BU1
32N50BU1S
O-247
32N50BU1S)
32N90BU1
32NS0BU1S
B2-22
32N50
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Untitled
Abstract: No abstract text available
Text: □IXYS Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode V CES 500 V 44 A 2.1 V 55 ns ^C 25 V CE(sat)typ Combi Pack ^fi(typ) ?C G f| TO-247 SMD* Symbol Test Conditions V VCGH Ta= 25°C to 150°C v oE Maximum Ratings m T,J = 25°C to 150°C; FU
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IXGH22N50BU1
IXGH22N50BU1S
O-247
4bflb22b
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617A
Abstract: No abstract text available
Text: SIEMENS SFH61OA/611A/615A/617A 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY FEATURES • High Currant Transfer Ratios at 10 mA: 40-320% at 1 mA: 60% typical >13 • Low CTR Degradation • Qood CTR Linearity Depending on Forward Current • • • Withstand Test Voltage, 5300 VACRMs
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SFH61O
/611A/615A/617A
SFH6106/16/56
SFH610A/11A/15A/17A
617A
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