Untitled
Abstract: No abstract text available
Text: Formosa MS SMD Small Signal Switching Diode BAS16T/BAV70T/BAW56T/BAV99T List List. 1 Package outline. 2
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BAS16T/BAV70T/BAW56T/BAV99T
MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
METHOD-4066-2
1000hrs.
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smd marking JD
Abstract: JJ SMD diode smd diode JD smd diode je smd transistor JE smd diode bas16t smd diode marking JJ smd marking JE smd diode A2 BAV70T
Text: Diodes SMD Type Switching Diode BAS16T;BAW56T BAV70T;BAV99T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 +0.01 0.1-0.01 +0.05 0.8-0.05 1 +0.15 1.6-0.15 2 0.55 Features 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter
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BAS16T
BAW56T
BAV70T
BAV99T
OT-523
BAS16T
BAV70T
smd marking JD
JJ SMD diode
smd diode JD
smd diode je
smd transistor JE
smd diode bas16t
smd diode marking JJ
smd marking JE
smd diode A2
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E91231
Abstract: IS660 IS661 IS662 IS660X ic smd code sm
Text: IS660, IS661, IS662 IS660X, IS661X, IS662X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS z UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATION APPROVALS z VDE 0884 in 3 available lead form : - STD - G form z High BVCEO 400V min. - IS662
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IS660,
IS661,
IS662
IS660X,
IS661X,
IS662X
E91231
IS662)
IS661)
IS660)
E91231
IS660
IS661
IS662
IS660X
ic smd code sm
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s4c diode
Abstract: DIODE SMD MARKING 5C smd ic marking SH
Text: Super Fast Recovery Diode Single Diode mfm OUTLINE Package : STO-220 DF20L60 PyhfLig- ffl Unit-mm Weight 1.5g (Typ) 10.2 600V 20A Feature • SMD 1ralîEE • SMD •trr=70ns • trr=70ns • High Voltage 4.7 Main Use - PFC • PFC(Power Factor Correction)
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STO-220
DF20L60
s4c diode
DIODE SMD MARKING 5C
smd ic marking SH
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10LC20U
Abstract: 10LC20 spacification DIODE smd marking MO 10LC2 smd diode marking JC DF10LC20U
Text: Super Fast Recovery Diode Twin Diode m tm m o u tlin e DF1 0 LC 2 0 U 20 0V 10A Feature • SMD • Low Noise • trr-35ns • SMD • e y -rx • trr-3 5 n s Main Use • D C /D C D y / K - Ï • m m , OA.RBE • a e .F A • • • • Switching Regulator
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DF10LC20U
trr-35ns
STO-220
10LC20U
J532-1)
10LC20
spacification
DIODE smd marking MO
10LC2
smd diode marking JC
DF10LC20U
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SMD M1B diode
Abstract: SMD M1B sr smd diode smd marking KM m1b marking smd diode A4 J532 M3FL20U smd diode sr SMD marking "SR"
Text: Super Fast Recovery Diode mtm OUTLINE Single Diode M3FL20U U nit-m m W eight 0.072g Typ Package : M2F Jj V—Y-?—? 200V 3A Feature • /J v P S M D • Small SMD • ß y -rx • trr= 3 5 n s • Low Noise G> \4 • trr=35ns • Low V f=0.95V • <SV f=0.95V
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M3FL20U
i50Hz
SMD M1B diode
SMD M1B
sr smd diode
smd marking KM
m1b marking
smd diode A4
J532
M3FL20U
smd diode sr
SMD marking "SR"
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode OUTLINE D2FK60 Unit* mm Weight O.lötf Typ Package : 2F a y -K v -» / Cattaxlr mark 600V 1.5A Feature !> — M - •HJBEE • Small SMD • High Voltage • trr= 7 5 n s • trr-7 5 n s • <£V f=1.3V • Low Vf=1.3V
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D2FK60
J532-1)
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smd diode 27c
Abstract: marking smd NU smd diode marking sim kb MARKING SMD Diode marking 27C SMD MARKING DIODE VU smd marking nu smd diode marking NN smd marking 2x DG1M3
Text: Schottky Barrier Diode Single Diode m tm m DG1M3 o u t lin e Package : G 1 F Unu:mm Weight O.O llii Typ 30 V 1A in 3 Feature • • • • • lâiW§y=0.8mm • ß V f = 0.46 V • 1ftlR= 0.05mA i |C24 Ultra-small SMD Ultla-thin PKG=0.8mm Low Vf -0.46V
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J532-1)
smd diode 27c
marking smd NU
smd diode marking sim
kb MARKING SMD
Diode marking 27C
SMD MARKING DIODE VU
smd marking nu
smd diode marking NN
smd marking 2x
DG1M3
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J532
Abstract: WTT device marking marking BTJ
Text: Schottky Barrier Diode mtmm Single Diode M1FJ4 40V1.5A o u t l in e io V - P v - ? Cathode mark CD Feature l • /J v g y S M D - Small SMD > Tj=150°C 1Tj=150°C 1Low lR=0.05mA 1Resistance for thermal run-away • < S lR = 0 .0 5 m A :u ic < n Unit-mm Weight 0.027g Typ
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150lC
50IIz
J532
WTT device marking
marking BTJ
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marking 33a on semiconductor
Abstract: 2TWR smd diode code marking 33A SMD MARKING CODE tvw marking code vu
Text: Schottky Barrier Diode mtmm o u t l i n e Single Diode M1FS4 U nit I mm Package : M1F W eight 0 .0 2 7 tf T y p 40 V 1.33A &y—Kv—? Cathode mark Feature • /JvgaSMD • Small SMD • V f=0.55V • Low V f=0.55V • P R R S M ^ n '^ > '> x (* !iE • P rrsm Rating
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J532-1
marking 33a on semiconductor
2TWR
smd diode code marking 33A
SMD MARKING CODE tvw
marking code vu
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode D3FP3 U nit I mm Package : 2F Weight 0.16tf Typ ay— K v -y 30V 3A ' Cathode mark Feature • î • £«» • Small SMD • Ultra-Low Vf=0.4V S V f = 0 .4 V Main Use • n y x u - im s it • D C t U ^ lO R f f l
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Untitled
Abstract: No abstract text available
Text: Single Diode M1FH3 Schottky Barrier Diode mtmm o u t l in e 30V 1.5A io V - P v - ? C ath o d e m ark CD Feature I Small SMD Super-Low V f= 0 .3 6 V •g e < g V F = 0 .3 6 V Unit-mm Weight 0.027g Typ Package : M1F H92 1 , T y p e No. Main Use • D C /D C
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smd diode marking zf
Abstract: DF10SC4M smd diode marking c MTKM Diode 1_b SMD
Text: Schottky Barrier Diode Twin Diode w nnm o u tlin e DF10SC4M 4 0 V 10 A Feature • SM D • SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating 1High lo Rating-Small-PKG » 'J i3 ü * S S 3 S g l Main Use • D C /D C n y i K — S> • mm. y-A.oA&gg • •
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DF10SC4M
11-PKG
STO-220
J532-1)
smd diode marking zf
DF10SC4M
smd diode marking c
MTKM
Diode 1_b SMD
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smd 42t
Abstract: Diode type SMD marking PJ J5-32 smd diode marking PJ smd diode marking zf DIODE pj mpav pj diode smd diode pj 55 pj 50 diode smd
Text: Twin Diode DE5SC6M Schottky Barrier Diode wnnm o u t l i n e Unit : nim Package : E-pack Weight 0 .3 2 6 a T yp 60V 5A CD @ <S> Feature • SM D • • SMD P r rsm T K ^ V S /i & S I • » 'J i3 ü * S S 3 S g l • mm. y-A.oA&gg • • • • I T yp«* No.
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11-PKG
J532-1)
smd 42t
Diode type SMD marking PJ
J5-32
smd diode marking PJ
smd diode marking zf
DIODE pj
mpav
pj diode
smd diode pj 55
pj 50 diode smd
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T731
Abstract: 25K10 smd 1l4 5k100 TN 733 10 C30T04QH C30T04QH-11A T35OT Diode smd 417
Text: SCHOTTKY BARRIER DIODE C30T04QH C30T04QH-11A 3 0 A /4 0 V FEATURES o | SQUARE-PAK | TO-263AB SMD Packaged in 24mm Tape and Reel : C30T04QH o Tabless T0-220 : C30T04QH-11A ODual Diodes •Cathode Common oL ow Forward Voltage Drop o High Surge Capability O T j = 150°C operation
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0A/40V
C30T04QH
C30T04QH-11A
O-263AB
C30T04QH
T0-220
T35OT
55U0O)
T731
25K10
smd 1l4
5k100
TN 733 10
C30T04QH-11A
T35OT
Diode smd 417
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C20T03QL C20T03QL-11A 20A/30V FEATURES o | SQUARE-PAK | TO-263AB SMD P ackaged in 24mm T ape and Reel : C 2 0 T -Q L O Tabless TO-220 : C 20T-Q L-11A ODual Diodes—Cathode Common OLow Forw ard V oltage Drop o High Surge Capability
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C20T03QL
C20T03QL-11A
0A/30V
O-263AB
O-220
20T-Q
L-11A
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IM182
Abstract: smd diode code jc
Text: 5 /a s /h *- AUT' S H ^ - h Schottky Barrier Diode OUTLINE DIMENSIONS DF40SC3L 10 .2 ± a : M Date code 30V 40A @ aa^t_ Type No. Polarity >SMD >Tjl50°C US V f = 0.45 V 05 Ö 40SC3L mu ) P rrs m 7 7 Unit •mm Package I STO-220 0. [±0.1 0.7±a 1. 2 ± 0 -
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DF40SC3L
Tjl50
STO-220
40SC3L
J515-5
IM182
smd diode code jc
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smd diode 819
Abstract: 30n60
Text: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO
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IXGH30N60BU1
IXGH30N60BU1S
O-247
30N60BU1S)
typ200
B2-58
smd diode 819
30n60
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JJ SMD diode
Abstract: No abstract text available
Text: S/as/h= *P - A U T ' Schottky Barrier Diode O UTLINE D IM E N S IO N S DF30SC3ML U n it • m m Package I STO-220 -I n 9 ±0.5 30V 30A >SMD > T jl5 0 °C H £V f = 0.45 V Prrsm 77 V 5 V 'J i ffiti n m -xm zam m »SRSÜ ►DC/DC n y j K — t f — h s
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DF30SC3ML
F30SC
100tT
J515-5
JJ SMD diode
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10SC4M
Abstract: f10sc4
Text: S /a v M * - K U 7 S W Schottky Barrier Diode - I * O U T LIN E D IM E N S IO N S DF10SC4M U nit • mm P a c k a g e I S T O -2 2 0 10 . 2 ± a : M 40 V 10 A 0 .5 ±a @ Date code ati^i_ 2 Type No. 05 Ö 10SC4M m a Polarity >SMD Il >Tjl50°C >Prrsm t j ^ y ' j I ffiti
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DF10SC4M
10SC4M
Tjl50
T-74S
J515-5
10SC4M
f10sc4
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Untitled
Abstract: No abstract text available
Text: • lililí! Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode v0E, u, CE sat typ Combi Pack ^fi(typ) 500 V 44 A 2.1 V 55 ns TO-247SMD* Symbol Test Conditions VCES VCOR Jj 25°C to 150°C T,J = 25°C to 150°C; Rb t VGES VQEM Continuous
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IXGH22N50BU1
IXGH22N50BU1S
O-247SMD*
O-247
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode CES IXGH12N100U1 IXGH 12N100AU1 L O W V CE S« | High Speed OC Jj K g 1000 V 1000 V Test Conditions V VCGR Tj Tj v OES VGEM Continuous Transient ^C25 ^CM Tc =25=C Tc =90°C T c = 25° C, 1 ms SSOA (RBSOA VG6 = 1 5 V ,T VJ= 125° C, RG= 1 5 0 Q
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IXGH12N100U1
12N100AU1
O-247
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Untitled
Abstract: No abstract text available
Text: PD 9.1414A International IO R Rectifier IR L M S 6 7 0 2 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channei MOSFET . * «1 : n V q ss J f , * *| O'— JJ — G ~ iJ L-f~ s = -20V ^ D S (o n ) =
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Drive circuit for IGBT using IR2130
Abstract: Schematic Drive circuit for IGBT using IR2130 SMD LD3 smd diode h15 AN-985 two IR2130 12 output single phase IR2130 MP816 ac motor speed control circuit ir2130 h1n1
Text: International ion R e c tifie r D e sig n T ips DT 93-6B INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 MINIATURIZATION OF THE POWER ELECTRONICS FOR MOTOR DRIVES By G erry Limjuco & Dana Wilhelm
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T0-220
IRGBC30KD2-S)
Drive circuit for IGBT using IR2130
Schematic Drive circuit for IGBT using IR2130
SMD LD3
smd diode h15
AN-985
two IR2130 12 output
single phase IR2130
MP816
ac motor speed control circuit ir2130
h1n1
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