Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SMD DIODE GG 45 Search Results

    SMD DIODE GG 45 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SMD DIODE GG 45 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oled display driver

    Abstract: No abstract text available
    Text: MXED101 30V, 192-Channel OLED Display Driver Features • CMOS technology • 192 output channels • Programmable output current control • The option of using 3.3V or 5V logic supply voltage • 55 MHz clock frequency • A function for cascading more than one device


    Original     		PDF MXED101 192-Channel MXED101 DS-MXHV826-R0A oled display driver

    gc 5.5V 1.0F

    Abstract: AN 17823 17823 OLED driver IC MXED101 MXED101DI MXED101TP 5.5V 1.0f GC
    Text: MXED101 30V, 192-Channel OLED Display Driver General Description Features: • CMOS technology • 192 Precision outputs • Programmable output current control • Optimized adjacent channel and chip-to-chip output matching • 3.3V or 5V logic supply voltage


    Original     		PDF MXED101 192-Channel MXED101TP) MXED101DI) MXED101 192-output DS-MXED101-R9 gc 5.5V 1.0F AN 17823 17823 OLED driver IC MXED101DI MXED101TP 5.5V 1.0f GC

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MXED101

    Abstract: oled display driver oled row driver
    Text: MXED101 30V, 192-Channel OLED Display Driver Features • • • • • • • • • • • CMOS technology 192 output channels Programmable output current control The option of using 3.3V or 5V logic supply voltage 55MHz clock frequency A function for cascading more than one device


    Original     		PDF MXED101 192-Channel 55MHz oled display driver oled row driver

    germanium diode CROSS-REFERENCE

    Abstract: monostable multivibrator smd
    Text: INTEGRATED CIRCUITS 74LV123 Dual retriggerable monostable multivibrator with reset Product data Supersedes data of 1998 Apr 20 Philips Semiconductors 2003 Mar 13 Philips Semiconductors Product data Dual retriggerable monostable multivibrator with reset FEATURES


    Original     		PDF 74LV123 74LV123 germanium diode CROSS-REFERENCE monostable multivibrator smd

    ISD203

    Abstract: IS201 IS202 IS203 IS204 ISD201 ISD202 ISD204 ISQ201 ISQ202
    Text: IS201, IS202, IS203, IS204, ISD201, ISD202, ISD203, ISD204, ISQ201, ISQ202, ISQ203, ISQ204 HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS z UL recognised, File No. E91231 Package Code " GG " or " FF " IS201 IS202 IS203 IS204 7.0 6.0 'X' SPECIFICATIONAPPROVALS


    Original     		PDF IS201, IS202, IS203, IS204, ISD201, ISD202, ISD203, ISD204, ISQ201, ISQ202, ISD203 IS201 IS202 IS203 IS204 ISD201 ISD202 ISD204 ISQ201 ISQ202

    smd diode marking zf

    Abstract: DF10SC4M smd diode marking c MTKM Diode 1_b SMD
    Text: Schottky Barrier Diode Twin Diode w nnm o u tlin e DF10SC4M 4 0 V 10 A Feature • SM D • SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating 1High lo Rating-Small-PKG » 'J i3 ü * S S 3 S g l Main Use • D C /D C n y i K — S> • mm. y-A.oA&gg • •


    OCR Scan     		PDF DF10SC4M 11-PKG STO-220 J532-1) smd diode marking zf DF10SC4M smd diode marking c MTKM Diode 1_b SMD

    SMD diode NC

    Abstract: smd JS SMD 2002 TO-254AA Package smd js t 74 HC 00 smd 2003 SMD IC
    Text: SEMTECH CORP E1E D • D0D52S3 & ■ 7-3?-// SEMTECH CORPORATION MICROELECTRONICS DIVISION SMD 2001 N-Channel Power MOSFETs, IN HERMETIC ISOLATED TO -254AA PACKAGE Ideally suited for applications such as switching pow er supplies, m otor controls, inverters, choppers, audio


    OCR Scan     		PDF D0D52S3 -254AA SM883 SMD diode NC smd JS SMD 2002 TO-254AA Package smd js t 74 HC 00 smd 2003 SMD IC

    smd diode code b54

    Abstract: smd transistor c015 BUZ101S E3045 Q67040-S4013-A2 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA
    Text: BUZ101S Infineon ta c h n ol o g ¡ u m p f ° v c d Ro8'°”’ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R0S on • Avalanche rated Continuous drain current


    OCR Scan     		PDF BUZ101S P-T0220-3-1 Q67040-S4013-A2 E3045A P-T0263-3-2 Q67040-S4013-A6 E3045 smd diode code b54 smd transistor c015 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA

    smd transistor marking 7j

    Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s BUZ103S E3045 Q67040-S4009-A2 diode marking code MU marking 684 diode smD
    Text: Infineon BUZ103S ,y e d Rosi0"' ’ technologie» im p f SIPMOS® Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current


    OCR Scan     		PDF BUZ103S BUZ103S P-T0220-3-1 Q67040-S4009-A2 E3045A P-T0263-3-2 Q67040-S4009-A6 E3045 smd transistor marking 7j TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s diode marking code MU marking 684 diode smD

    diode smd marking BUZ

    Abstract: TRANSISTOR 023 3010 Q67040-S4003-A2 G1337 diode smd m7 BUZ111S E3045 TRANSISTOR AO SMD MARKING smd code book smd marking ACH
    Text: BUZ 111S Infineon t«chnologi«$ SIPMOS Power Transit Product Summary Features V 55 • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current fîDS on> 0.008 i i 80 A b • dv/df rated


    OCR Scan     		PDF BUZ111S P-T0220-3-1 Q67040-S4003-A2 E3045A P-T0263-3-2 Q67040-S4003-A6 E3045 diode smd marking BUZ TRANSISTOR 023 3010 G1337 diode smd m7 TRANSISTOR AO SMD MARKING smd code book smd marking ACH

    Untitled

    Abstract: No abstract text available
    Text: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current


    OCR Scan     		PDF 08N05L P-T0252 Q67040-S4134 P-T0251 SPD08N05L SPU08N05L Q67040-S4182-A2 S35bQ5 Q133777 SQT-89

    transistor 8BB smd

    Abstract: smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su BUZ100S smd DIODE 3FS H7 marking code smd smd transistor c015
    Text: BUZ 10OS In fin e o n technologie» SIPMOS Power Transistor Product Summary Features 55 V • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.015 Í2 77 A • dv/df rated


    OCR Scan     		PDF BUZ100S P-T0220-3-1 Q67040-S4001-A2 E3045A P-T0263-3-2 Q67040-S4001-A6 E3045 transistor 8BB smd smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su smd DIODE 3FS H7 marking code smd smd transistor c015

    Untitled

    Abstract: No abstract text available
    Text: SPD 08N10 I nf ine on te ch no lo g iai Preliminary Data S IP M O S P o w e r T ra n s is to r Product Summary Features Drain source voltage • N channel Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated


    OCR Scan     		PDF 08N10 SPD08N10 P-T0252 Q67040-S4126 SPU08N10 P-T0251 Q67040-S4118-A2 S35bQ5 Q133777 SQT-89

    BUZ100

    Abstract: No abstract text available
    Text: SIEMENS BUZ 100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A


    OCR Scan     		PDF O-220 BUZ100L C67078-S1354-A2 BUZ100

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode CES IXGH12N100U1 IXGH 12N100AU1 L O W V CE S« | High Speed OC Jj K g 1000 V 1000 V Test Conditions V VCGR Tj Tj v OES VGEM Continuous Transient ^C25 ^CM Tc =25=C Tc =90°C T c = 25° C, 1 ms SSOA (RBSOA VG6 = 1 5 V ,T VJ= 125° C, RG= 1 5 0 Q


    OCR Scan     		PDF IXGH12N100U1 12N100AU1 O-247

    Untitled

    Abstract: No abstract text available
    Text: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6


    OCR Scan     		PDF BSP318S OT-223 Q67000-S127 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    Transistor SMD SM 942

    Abstract: No abstract text available
    Text: SPD 30N03 I nf ineon tec h n o l og i « s SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current V 'd s f l D S o n fc> 30


    OCR Scan     		PDF 30N03 67040-S 144-A -T0251-3-1 146-A S35bQ5 Q133777 SQT-89 B535bQ5 Transistor SMD SM 942

    XC+872

    Abstract: No abstract text available
    Text: SPD 10N10 Inf i ne on technologies Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS 100 V • Enhancement mode Drain-Source on-state resistance ñ DS on1 0.2 Q. • Avalanche rated Continuous drain current


    OCR Scan     		PDF 10N10 11-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T XC+872

    smd transistor marking dj

    Abstract: SMD Transistor PIT BUZ103SL E3045 Q67040-S4008-A2 P-T0263-3-2
    Text: ,•— BUZ 103SL Infineon \m p fO ',c d l w • e fi n o I o g I e $ ’ SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current


    OCR Scan     		PDF BUZ103SL BUZ103SL P-T0220-3-1 Q67040-S4008-A2 E3045A P-T0263-3-2 Q67040-S4008-A6 BU2103SL E3045 smd transistor marking dj SMD Transistor PIT

    23N05

    Abstract: No abstract text available
    Text: SPD 23N05 Infineon t« c h n o l o g ¡ o s i m p * o V e d R o ,°"’ SIPMOS PowerTransistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current


    OCR Scan     		PDF 23N05 SPD23N05 P-T0252 Q67040-S4152 SPU23N05 P-T0251 Q67040-S4132-A2 S35bQ5 Q133777 SQT-89 23N05

    Untitled

    Abstract: No abstract text available
    Text: SPD 28N03 I nf ine on technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R DS on • Avalanche rated Continuous drain current V 30 0.023 Q A 28 • üv/üt rated


    OCR Scan     		PDF 28N03 SPD28N03 P-T0252 Q67040-S4138 SPU28N03 P-T0251-3-1 Q67040-S4140-A2 S35bQ5 Q133777 SQT-89

    BTS110

    Abstract: No abstract text available
    Text: SIEMENS TEMPFET BTS110 Features • • • • N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin Type BTS 110 100 V 1 2 3 G D S ID ^DS or Package Ordering Code 10 A 0.2 £2


    OCR Scan     		PDF BTS110 TQ-220AB C67078-A5008-A2 fl235fciQ5 0235bG5 E3045 C67078-A5008-A4 ft235b05 BTS110

    transistor SMD 1gs

    Abstract: 46n03l smd 1Gs SD-46 Diode
    Text: , • - SPP 46N03L Inf ineon technology SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel ^D S Drain-Source on-state resistance . Enhancement mode f l D S o n Continuous drain current • Avalanche rated 30 V 0 .0 1 2


    OCR Scan     		PDF 46N03L SPP46N03L P-T0220-3-1 Q67040-S4147-A2 SPB46N03L P-T0263-3-2 Q67040-S4743-A2 S35bQ5 Q133777 SQT-89 transistor SMD 1gs 46n03l smd 1Gs SD-46 Diode