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    SMD CODE E2 TRANSISTOR Search Results

    SMD CODE E2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD CODE E2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN1294

    Abstract: PD60015 PD60015S
    Text: PD60015 PD60015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power


    Original     		PDF PD60015 PD60015S IS-97 PD60015 PowerSO-10RF. AN1294 PD60015S

    pd55035

    Abstract: smd transistor code A4
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 13 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD55035 PD55035S PowerSO-10RF. smd transistor code A4

    smd transistor code A4

    Abstract: AN1294 PD60004 PD60004S
    Text: PD60004 PD60004S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gain @ 2000 MHz DESCRIPTION The PD60004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power


    Original     		PDF PD60004 PD60004S IS-97 PD60004 PowerSO-10RF. smd transistor code A4 AN1294 PD60004S

    AN1294

    Abstract: PD60030 PD60030S
    Text: PD60030 PD60030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power


    Original     		PDF PD60030 PD60030S IS-97 PD60030 PowerSO-10RF. AN1294 PD60030S

    smd code marking NEC

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
    Text: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part


    Original     		PDF G18756EU3V0SG00 smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP

    Untitled

    Abstract: No abstract text available
    Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD55025 PD55025S PowerSO-10RF PD55025

    AN1294

    Abstract: LET20015 LET90015
    Text: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION


    Original     		PDF LET20015 IS-97 PowerSO-10RF LET90015 LET20015 AN1294 LET90015

    AN1294

    Abstract: LET20015 LET90015
    Text: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION


    Original     		PDF LET20015 IS-97 PowerSO-10RF LET90015 LET20015 AN1294 LET90015

    smd code ND e3

    Abstract: No abstract text available
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD55035 PD55035S PowerSO-10RF. smd code ND e3

    smd code ND e3

    Abstract: No abstract text available
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD55035 PD55035S PowerSO-10RF. smd code ND e3

    transistor SMD Y1

    Abstract: y1 smd transistor smd transistor E3 cdfp4-f16 smd transistor a2 SMD TRANSISTOR Y1 y4 smd transistor y6 smd transistor SMD transistor code AL 5962F9853401VEC
    Text: ACS138MS S E M I C O N D U C T O R Radiation Hardened 3-to-8 Line Decoder/Demultiplexer December 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS138MS is an Inverting 3-to-8 Line Decoder/Demultiplexer with three binary select inputs


    Original     		PDF ACS138MS ACS138MS transistor SMD Y1 y1 smd transistor smd transistor E3 cdfp4-f16 smd transistor a2 SMD TRANSISTOR Y1 y4 smd transistor y6 smd transistor SMD transistor code AL 5962F9853401VEC

    transistor SMD Y1

    Abstract: y1 smd transistor SMD TRANSISTOR Y1 TRANSISTOR C 4460 CDFP4-F16 SMD TRANSISTOR Y7 Y5 smd transistor smd transistor E3
    Text: ACTS138MS S E M I C O N D U C T O R Radiation Hardened TTL Input, 3-to-8 Line Decoder/Demultiplexer December 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACTS138MS is an Inverting 3-to-8 Line Decoder/Demultiplexer with three TTL level binary


    Original     		PDF ACTS138MS ACTS138MS transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 TRANSISTOR C 4460 CDFP4-F16 SMD TRANSISTOR Y7 Y5 smd transistor smd transistor E3

    capacitor 220 uf

    Abstract: No abstract text available
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


    Original     		PDF PD57060 PD57060S PD57060S PowerSO-10RF. capacitor 220 uf

    Untitled

    Abstract: No abstract text available
    Text: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57070 PD57070S PowerSO-10RF PowerSO-10RF.

    y6 smd transistor

    Abstract: SMD TRANSISTOR Y1 cdfp4-f16 Y6 smd y4 smd transistor e2 smd transistor Y5 smd y1 smd transistor cdfp4 smd transistor A1
    Text: ACS138MS Radiation Hardened 3-to-8 Line Decoder/Demultiplexer December 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS138MS is an Inverting 3-to-8 Line Decoder/Demultiplexer with three binary select inputs


    Original     		PDF ACS138MS MIL-PRF-38535 ACS138MS 25Micron 100MeV/ y6 smd transistor SMD TRANSISTOR Y1 cdfp4-f16 Y6 smd y4 smd transistor e2 smd transistor Y5 smd y1 smd transistor cdfp4 smd transistor A1

    y6 smd transistor

    Abstract: y4 smd y1 smd transistor e2 smd transistor smd code Y1 si 4460 SMD Transistor Y6 transistor smd Y2 Y1 smd 5962F9853501VEC
    Text: ACTS138MS Radiation Hardened TTL Input, 3-to-8 Line Decoder/Demultiplexer December 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACTS138MS is an Inverting 3-to-8 Line Decoder/Demultiplexer with three TTL level binary


    Original     		PDF ACTS138MS MIL-PRF-38535 ACTS138MS 25Micron 100MeV/ y6 smd transistor y4 smd y1 smd transistor e2 smd transistor smd code Y1 si 4460 SMD Transistor Y6 transistor smd Y2 Y1 smd 5962F9853501VEC

    BTS442E2

    Abstract: E3043 E3062 E3062A Q67060-S6206-A2 Q67060-S6206-A3 Q67060-S6206-A4 BTS442E2 E3062A
    Text: PROFET BTS 442 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown


    Original     		PDF O-220AB/5 O-220AB/5, E3043 E3043 Q67060-S6206-A2 Q67060-S6206-A3 E3062 BTS442E2 E3062A Q67060-S6206-A2 Q67060-S6206-A3 Q67060-S6206-A4 BTS442E2 E3062A

    4267 G

    Abstract: E2 SMD Transistor
    Text: 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features ● ● ● ● ● ● ● ● ● ● ● ● ● ● Output voltage tolerance ≤ ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V ≤ 400 ms


    Original     		PDF Q67000-A9153 Q67006-A9169 Q67000-A9246 P-TO220-7-3 P-TO220-7-180 P-TO220-7-230 P-DSO-14-8 P-TO220-7-3 O-220 E3180) 4267 G E2 SMD Transistor

    Untitled

    Abstract: No abstract text available
    Text: Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Pb-free lead plating; RoHS compliant Bipolar IC Features ● ● ● ● ● ● ● ● ● Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable


    Original     		PDF Q67000-A8339 Q67000-A8340 GPD05583 GPS05121

    P1M marking code sot 223

    Abstract: marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223
    Text: 11 SMD Darlington Transistors SMD® Darlington Transistors Description Mechanical Data Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two seriesintegrated transistors on a single chip. High current versions


    OCR Scan     		PDF PXTA14 PXTA64 PZTA13 PZTA14 PZTA63 PZTA64 OT-23 OT-89 OT-223 P1M marking code sot 223 marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223

    smd code marking v8 sot23

    Abstract: SMD MARKING CODE 101 SOT23-5 SMD sot23 marking E6 smd p8 sot23 marking codes n1 transistors sot-23 SMD sot23-5 marking E2 marking code 4k SMD sot23-5 SMD CODE E2 smd code marking v8 sot223 SOT89 smd marking 13
    Text: BROADBAND SMD TRANSISTORS DESCRIPTION • Philips Components broadband transistors are the result of leading-edge technology dedicated to expanding performance and selection in the wideband arena. The devices are ideal amplifiers for VHF, UHF, and microwave


    OCR Scan     		PDF OT-223 BFG135 BFG197 BFG198 BFQ17 BFQ18A BFQ19 BFQ67 BFQ149 BFR53 smd code marking v8 sot23 SMD MARKING CODE 101 SOT23-5 SMD sot23 marking E6 smd p8 sot23 marking codes n1 transistors sot-23 SMD sot23-5 marking E2 marking code 4k SMD sot23-5 SMD CODE E2 smd code marking v8 sot223 SOT89 smd marking 13

    smd code marking 2A sot23

    Abstract: MARKING CODE 3b sot-89 SOT-89 marking 3b marking code SS SOT23 sot-23 npn marking code cr sot143 Marking code 5B marking .H2 sot89 SOT-89 marking 3f 3B SOT-89 smd 2A sot23
    Text: GENERAL PURPOSE SMD PNP TRANSISTORS DESCRIPTION • Philips Components general purpose transistors combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These transistors provide a broad selection


    OCR Scan     		PDF OT-89 OT-223 PMBT2907A PMBT3906 PMBT4403 PMBTA55 PMBTA56 PMBTA70 PXT2907A PXT3906 smd code marking 2A sot23 MARKING CODE 3b sot-89 SOT-89 marking 3b marking code SS SOT23 sot-23 npn marking code cr sot143 Marking code 5B marking .H2 sot89 SOT-89 marking 3f 3B SOT-89 smd 2A sot23

    transistor kA2 smd

    Abstract: AEP01481
    Text: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features • • • • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V < 400 ms


    OCR Scan     		PDF Q67000-A9153 P-T0220-7-3 67006-A P-T0220-7-180 Q67000-A9246 P-T0220-7-230 GPT05887 transistor kA2 smd AEP01481

    5cp smd

    Abstract: smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23
    Text: General Purpose SMD PNP Transistors 11 General Purpose SMD® PNP Transistors Description Mechanical Data Philips Components general purpose transistors combine the highest quality standards with state-of-the-art pro­ duction equipment to fulfill the need for generic, low-cost


    OCR Scan     		PDF OT-23 OT-89 OT-143 OT-223 OT-223 5cp smd smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23