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    SMD A16 TRANSISTOR Search Results

    SMD A16 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SMD A16 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPIO-4 Precision Signal-Path Controller Board Users' Guide December 2010 Table of Contents 1.0 SPIO-4 System Overview . 3 1.0 SPIO-4 System Overview . 3


    Original     		PDF

    samsung s3c2440 user manual

    Abstract: schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet
    Text: H/W Design Guide System Controller S3C2440A 32-Bit RISC Microprocessor October, 2007 REV 1.0 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S3C2440A_H/W DESIGN GUIDE_REV 1.0 Important Notice


    Original     		PDF S3C2440A 32-Bit S3C2440A 22uF/36V 7uF/16V 47uF/16V MMBT3904 ATS49) 237X165X2t, samsung s3c2440 user manual schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet

    PDM41257SA15D

    Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
    Text: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in


    Original     		PDF MIL-STD-883 PDM41257SA15D Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256

    SmD TRANSISTOR a41

    Abstract: SmD TRANSISTOR a71 schematic diagram epson r230 smd code A9 3 pin transistor transistor 1x100 smd transistor b35 SMD SOT23 a41 SMD CODE A71 R282 800 000 XFORMER cost of accident
    Text: PMC-Sierra, Inc. REFERENCE DESIGN PMC-970390 ISSUE 1 ADVANCE PM3351 ELAN 1x100 2-PORT 10/100 MBIT/S ETHERNET SWITCH PM3351 Elan 1x100 2-Port Fast Ethernet Switch Reference Design PROPRIETARY AND CONFIDENTIAL ADVANCE Issue 1: April , 1998 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000


    Original     		PDF PMC-970390 PM3351 1x100 PM3351 PMC-970390 SmD TRANSISTOR a41 SmD TRANSISTOR a71 schematic diagram epson r230 smd code A9 3 pin transistor transistor 1x100 smd transistor b35 SMD SOT23 a41 SMD CODE A71 R282 800 000 XFORMER cost of accident

    Untitled

    Abstract: No abstract text available
    Text: AT65609EHV Rad Hard, 5V, 128K x 8 Very Low Power CMOS SRAM DATASHEET Features z Asynchronous SRAM z Operating Voltage: 5V z Read Access Time: 40 ns z Write Cycle Time: 30 ns z Very Low Power Consumption Pre-RAD z z Active: 275 mW (Max) Standby: 44 mW (Max)


    Original     		PDF AT65609EHV MIL-PRF38535 M65608E

    Atmel 652

    Abstract: AT65609EHV AT65609EHV-DJ40SR Atmel+652
    Text: AT65609EHV Rad Hard, 5V, 128K x 8 Very Low Power CMOS SRAM DATASHEET Features z Asynchronous SRAM z Operating Voltage: 5V z Read Access Time: 40 ns z Write Cycle Time: 30 ns z Very Low Power Consumption Pre-RAD z z Active: 275 mW (Max) Standby: 44 mW (Max)


    Original     		PDF AT65609EHV MIL-PRF38535 M65608E Atmel 652 AT65609EHV AT65609EHV-DJ40SR Atmel+652

    transistor SMD PB28

    Abstract: A29 SMD transistor SMD PB29 A22 SMD CODE POE-A Motorola diode SMD code B14 book of pc mother board circuit PC MOTHERBOARD CIRCUIT diagram RJ45 8pin smd TRANSISTOR code b6
    Text: MOTOROLA Motorola Semiconductor Israel Ltd. NETWORKING & COMMUNICATION SYSTEMS GROUP MPC860DB & MPC860SARDB & MPC860TDB Revision PILOT User’s Manual 6σ SIX SIGMA AUTHOR: HAIM AMIR- MSIL MOTOROLA MPC860DB - User’s Manual CHAPTER 1 - . . . . . . General Information .6


    Original     		PDF MPC860DB MPC860SARDB MPC860TDB MPC860DB MPC860X transistor SMD PB28 A29 SMD transistor SMD PB29 A22 SMD CODE POE-A Motorola diode SMD code B14 book of pc mother board circuit PC MOTHERBOARD CIRCUIT diagram RJ45 8pin smd TRANSISTOR code b6

    diode in48

    Abstract: IN58 diode SN105125
    Text: User's Guide SBAU186 – March 2011 DDC264EVM User's Guide DDC264EVM This user's guide describes the characteristics, operation, and use of the DDC264EVM. This evaluation module EVM is an evaluation kit for evaluating the DDC264, a 64-channel, current input, 20-bit


    Original     		PDF SBAU186 DDC264EVM DDC264EVM DDC264EVM. DDC264, 64-channel, 20-bit DDC264 DDC264EVMm diode in48 IN58 diode SN105125

    transistor SMD PB28

    Abstract: transistor SMD PB29 PC MOTHERBOARD SERVICE MANUAL SMD A18 Transistor A29 SMD A22 SMD CODE b14 smd diode POE-A smd diode code a30 mother board
    Text: MOTOROLA Motorola Semiconductor Israel Ltd. NETWORKING & COMMUNICATION SYSTEMS GROUP MPC860DB & MPC860SARDB & MPC860TDB Revision PILOT User’s Manual 6σ SIX SIGMA AUTHOR: HAIM AMIR- MSIL MOTOROLA MPC860DB - User’s Manual CHAPTER 1 - . . . . . . General Information .6


    Original     		PDF MPC860DB MPC860SARDB MPC860TDB MPC860DB MPC860FADSDBUM/D transistor SMD PB28 transistor SMD PB29 PC MOTHERBOARD SERVICE MANUAL SMD A18 Transistor A29 SMD A22 SMD CODE b14 smd diode POE-A smd diode code a30 mother board

    transistor SMD p16

    Abstract: transistor SMD b22 ISL95901 smd TRANSISTOR code b6 CRCW06033162F
    Text: Application Note 1743 Author: Jun Xiao Wide VIN Dual Integrated Buck Regulator With 6A/6A Continuous Output Current and LDOs Specifications FSW POSITION SWITCHING FREQUENCY kHz FSW = GND 300 FSW = OPEN 500 FSW = VCC 1000 Quick Setup Guide VIN RANGE (V) VOUT


    Original     		PDF ISL95901EVAL1Z AN1743 transistor SMD p16 transistor SMD b22 ISL95901 smd TRANSISTOR code b6 CRCW06033162F

    65609E

    Abstract: M65609E
    Text: M65609E 128 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M65609E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel Wireless & Microcontrollers brings the solution to applications where fast computing is as mandatory as


    Original     		PDF M65609E M65609E 65609E 65609E

    Untitled

    Abstract: No abstract text available
    Text: M65609E 128 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M65609E is a very low power CMOS static RAM organized as 131072 x 8 bits. TEMIC brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or


    Original     		PDF M65609E M65609E 65609E

    SMD Transistor PD8

    Abstract: Motorola diode SMD code B14 SMD A18 Transistor smd diode code a28 SMD transistor LD3 P6 MOTHERBOARD user MANUAL ts-82 switch smd code A9 3 pin transistor MPC821 A21 SMD transistor
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MPC821FADS User’s Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and


    Original     		PDF MPC821FADS coPC821, 357-Pin 361-Pin 74LCX08D 74LCX08D S-8051HN-CD-X S-8051 LM317MDT LM317MD SMD Transistor PD8 Motorola diode SMD code B14 SMD A18 Transistor smd diode code a28 SMD transistor LD3 P6 MOTHERBOARD user MANUAL ts-82 switch smd code A9 3 pin transistor MPC821 A21 SMD transistor

    SMD a16 Transistor

    Abstract: DQ7-21 MARK S2 smd transistor A8 M5M5V108CFP M5M5V108CRV M5M5V108CVP
    Text: MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70HI, -10HI, -70XI, -10XI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and


    Original     		PDF M5M5V108CFP -70HI, -10HI, -70XI, -10XI 1048576-BIT 131072-WORD M5M5V108CVP SMD a16 Transistor DQ7-21 MARK S2 smd transistor A8 M5M5V108CRV

    SMD a16 Transistor

    Abstract: DQ7-21 M5M5V108CFP 11A16 smd transistor A8 M5M5V108CRV M5M5V108CVP transistor smd tsu
    Text: MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70H, -10H, -70X, -10X 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and


    Original     		PDF M5M5V108CFP 1048576-BIT 131072-WORD M5M5V108CVP 32-pin SMD a16 Transistor DQ7-21 11A16 smd transistor A8 M5M5V108CRV transistor smd tsu

    A16311

    Abstract: MARK 12LL diode M5M5V208FP A9 transistor SMD smd transistor a9
    Text: MITSUBISHI LSIs '97.3.21 M5M5V208FP,VP,RV,KV,KR -70L-W , -85L -W, -10L-W , -12L-W , -70LL-W, -85LL-W, -10LL-W, -12LL-W 2097152-BIT 262144-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M5V208 is 2,097,152-bit CMOS static RAM organized as


    Original     		PDF M5M5V208FP -70L-W -10L-W -12L-W -70LL-W, -85LL-W, -10LL-W, -12LL-W 2097152-BIT 262144-WORD A16311 MARK 12LL diode A9 transistor SMD smd transistor a9

    MARK 12LL diode

    Abstract: M5M5V208FP m5m5v208 SMD a16 Transistor 2097152-BIT
    Text: MITSUBISHI LSIs '97.3.21 M5M5V208FP,VP,RV,KV,KR -70L , -85L, -10L , -12L, -70LL, -85LL, -10LL, -12LL 2097152-BIT 262144-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance


    Original     		PDF M5M5V208FP -70LL, -85LL, -10LL, -12LL 2097152-BIT 262144-WORD M5M5V208 152-bit 144-words MARK 12LL diode SMD a16 Transistor 2097152-BIT

    SMD a16 Transistor

    Abstract: M5M51008CP M5M51008CRV M5M51008CVP 55-HI
    Text: MITSUBISHI LSIs M5M51008CP,FP,VP,RV,KV,KR -55HI, -70HI, -55XI, -70XI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and


    Original     		PDF M5M51008CP -55HI, -70HI, -55XI, -70XI 1048576-BIT 131072-WORD M5M51008CVP SMD a16 Transistor M5M51008CRV 55-HI

    A22 SMD MARKING CODE

    Abstract: SMD MARKING CODE 1D6 SMD MARKING CODE 1D7 SMD MARKING CODE 2d1 A30 MARKING CODE 2D4 SMD marking a26 smd marking A26 smd marking code b6 SMD marking code B10
    Text: 74LVC16374A; 74LVCH16374A 16-bit edge-triggered D-type flip-flop with 5 V tolerant inputs/outputs; 3-state Rev. 06 — 12 February 2009 Product data sheet 1. General description The 74LVC16374A and 74LVCH16374A are 16-bit edge-triggered flip-flops featuring


    Original     		PDF 74LVC16374A; 74LVCH16374A 16-bit 74LVC16374A 74LVCH16374A ICP1020807 30-Nov-2010 A22 SMD MARKING CODE SMD MARKING CODE 1D6 SMD MARKING CODE 1D7 SMD MARKING CODE 2d1 A30 MARKING CODE 2D4 SMD marking a26 smd marking A26 smd marking code b6 SMD marking code B10

    diode db3 c248

    Abstract: CPPLC7LTBR EPM3128ATC100-10 IC LM317 8pin siemens ferrite n22 p14 zener DB3 C209 K4S643232-TC60 MURATA BLM18ag121 HALO N5 C242-C244
    Text: Freescale Semiconductor, Inc. User’s Manual Freescale Semiconductor, Inc. MPC852TADSRM/D Version 1.0 June 1, 2003 MPC852TADS User’s Manual Motorola, Inc., 2003 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.


    Original     		PDF MPC852TADSRM/D MPC852TADS diode db3 c248 CPPLC7LTBR EPM3128ATC100-10 IC LM317 8pin siemens ferrite n22 p14 zener DB3 C209 K4S643232-TC60 MURATA BLM18ag121 HALO N5 C242-C244

    Motorola diode SMD code B14

    Abstract: smd diode code a30 SMD Transistor PD8 smd diode code a28 transistor SMD PB28 transistor A25 SMD Motorola diode SMD code B13 smd diode b13 smd code A9 3 pin transistor Motorola diode SMD code B12
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. O IC EM R, O CT U ND C IN . MPC821FADS S E AL C S E User’s Manual RE CH R A ED V I BY F Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding


    Original     		PDF MPC821FADS 74LCX08D 74LCX08D S-8051HN-CD-X S-8051 LM317MDT LM317MD 768kHz, 30ppm, 16-Pin Motorola diode SMD code B14 smd diode code a30 SMD Transistor PD8 smd diode code a28 transistor SMD PB28 transistor A25 SMD Motorola diode SMD code B13 smd diode b13 smd code A9 3 pin transistor Motorola diode SMD code B12

    Untitled

    Abstract: No abstract text available
    Text: Ver. 1.1 MITSUBISHI LSIs M5M51008DFP,VP,RV,KV -55HI, -70HI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008DFP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS


    Original     		PDF M5M51008DFP -55HI, -70HI 1048576-BIT 131072-WORD M5M51008DVP 32-pin

    M5M51008DFP

    Abstract: M5M51008DRV M5M51008DVP
    Text: Ver. 1.1 MITSUBISHI LSIs M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS


    Original     		PDF M5M51008DFP 1048576-BIT 131072-WORD M5M51008DP M5M51008DVP 32-pin M5M51008DRV

    M5M5V108CFP

    Abstract: M5M5V108CRV M5M5V108CVP
    Text: MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70H, -10H, -70X, -10X 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and


    Original     		PDF M5M5V108CFP 1048576-BIT 131072-WORD M5M5V108CVP 32-pin M5M5V108CRV