EIA 549 Class 130B transformer
Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
Text: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.
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000pF
000pF
0201ZD103KAT2A
0201ZC103KAT2A
0201YC101KAT2A
0201YC271KAT2A
0201YC471KAT2A
02013A1R0CAT2A
02013A4R7CAT2A
02013A100JAT2A
EIA 549 Class 130B transformer
mcf 300.04
capacitor 225 35k 844 SMD
av 1.40.00 mkt x2 .01uf
NTC 20K honeywell
1000 rpm dc motor 12v 100watt
BO 680Y
clarostat POTENTIOMETER 73JA
SMD MARKING CODE 503b
03028BR
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omron relay G2R-2 8 pin 12V DC
Abstract: Tyco 3604 relay krp power source sps 6360 SRD 12VDC SL C data 8873 64 pin colour tv ic TTK SG 2368 transistor DK qe smd eaton T85 rotary Switch PH ON 823 m 8645 ic MB 16651 G
Text: ND3% BASE1 XXXX5998-1631-1-P 1631 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 19-07-11 Hour: 08:29 TS:TS date TS time RELAYS, SOLENOIDS & CONTACTORS Go Online for Product Availability AUTOMOTIVE RELAYS DG34 SERIES AUTOMOTIVE INDUSTRIAL POWER RELAYS 60-80A AUTOMOTIVE RELAYS CONT.
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277VAC,
30VDC
10VAC/DC
250VAC
10million
0-80A
DG34-1021-36-1012-F
59PIARQ
S18UUA
S18UUAQ
omron relay G2R-2 8 pin 12V DC
Tyco 3604 relay
krp power source sps 6360
SRD 12VDC SL C
data 8873 64 pin colour tv ic
TTK SG 2368
transistor DK qe smd
eaton T85 rotary Switch
PH ON 823 m 8645
ic MB 16651 G
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Ceramic Capacitors 104
Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
Text: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.
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K99E-27
Ceramic Capacitors 104
mev-50a
DXW21BN7511S
SAYFP1G95AA0B00
ck 66 ul94v-0 lcd
SAYFP897MCA0B00
SAFEB1G57KE0F00
SAWEN1G84
murata enc-03r
MA300D1-1
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MM5829-2700
Abstract: MM8030-2600 ANCL11G57SAA165 ANCL11G57 CSR BC5MM MICROCHIP 2012 SMD MARKING AS-M15SA-R CA0TB MEDIATEK z5v cap
Text: MURATA PRODUCTS 2010-2011 2010-2011 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.
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K99E-28
MM5829-2700
MM8030-2600
ANCL11G57SAA165
ANCL11G57
CSR BC5MM
MICROCHIP 2012 SMD MARKING
AS-M15SA-R
CA0TB
MEDIATEK
z5v cap
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MIL-PRF-55342G
Abstract: P0302
Text: P www.vishay.com Vishay Sfernice High Precision Wraparound - Wide Ohmic Value Range Thin Film Chip Resistors FEATURES • Load life stability at ± 70 °C for 2000 h: 0.1 % under Pn/0.05 % under Pd • Low temperature coefficient down to 5 ppm/°C - 55 °C; + 155 °C
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MIL-PRF-55342G
11-Mar-11
P0302
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Untitled
Abstract: No abstract text available
Text: P www.vishay.com Vishay Sfernice High Precision Wraparound - Wide Ohmic Value Range Thin Film Chip Resistors FEATURES • Load life stability at ± 70 °C for 2000 h: 0.1 % under Pn/0.05 % under Pd • Low temperature coefficient down to 5 ppm/°C - 55 °C; + 155 °C
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MIL-PRF-55342G
11-Mar-11
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P0805
Abstract: vishay 1206 SMD resistors smd 8m1
Text: P Vishay Sfernice High Precision Wraparound - Wide Ohmic Value Range Thin Film Chip Resistors FEATURES For low noise and precision applications, superior stability, low temperature coefficient of resistance, and low voltage coefficient, Vishay Sfernice’s proven precision
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AEC-Q200
2002/95/EC
11-Mar-11
P0805
vishay 1206 SMD resistors
smd 8m1
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Untitled
Abstract: No abstract text available
Text: P www.vishay.com Vishay Sfernice High Precision Wraparound - Wide Ohmic Value Range Thin Film Chip Resistors FEATURES • Load life stability at ± 70 °C for 2000 h: 0.1 % under Pn/0.05 % under Pd • Low temperature coefficient down to 5 ppm/°C - 55 °C; + 155 °C
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MIL-PRF-55342G
11-Mar-11
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PI TOP 244 PN
Abstract: No abstract text available
Text: P www.vishay.com Vishay Sfernice High Precision Wraparound - Wide Ohmic Value Range Thin Film Chip Resistors FEATURES • Load life stability at ± 70 °C for 2000 h: 0.1 % under Pn/0.05 % under Pd • Low temperature coefficient down to 5 ppm/°C - 55 °C; + 155 °C
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MIL-PRF-55342G
11-Mar-11
PI TOP 244 PN
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Untitled
Abstract: No abstract text available
Text: P www.vishay.com Vishay Sfernice High Precision Wraparound - Wide Ohmic Value Range Thin Film Chip Resistors FEATURES • Load life stability at ± 70 °C for 2000 h: 0.1 % under Pn/0.05 % under Pd • Low temperature coefficient down to 5 ppm/°C - 55 °C; + 155 °C
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MIL-PRF-55342G
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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474 K5C capacitor
Abstract: 474 K1C capacitor 104 k7c smd k77 224k x7r 50 capacitor 104k 630 capacitor 105 K5C capacitor rde5c MK1C M.104 K5C
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering.
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C49E-21
DC250V
DC450V
DC630V
474 K5C capacitor
474 K1C capacitor
104 k7c
smd k77
224k x7r 50 capacitor
104k 630 capacitor
105 K5C capacitor
rde5c
MK1C
M.104 K5C
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220v AC voltage stabilizer schematic diagram
Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.
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Batte48
220v AC voltage stabilizer schematic diagram
1000w inverter PURE SINE WAVE schematic diagram
philips ecg master replacement guide
ecg semiconductors master replacement guide
diac 3202
bta16 6008
csr1000
mini Audio transformer 200k to 1k ct input
jrc 2904 d
BTA12 6008
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RE1201
Abstract: okaya catalog RA-362MS LE334-M XYE104
Text: NOISE SUPPRESSING COMPONENTS Customer’s Trust. NOISE SUPPRESSION CAPACITORS 3~26 NOISE SUPPRESSION CAPACITOR TECHNICAL DATA - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 4 ~11 LE SERIES - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1 2
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H0207E1407-2E
RE1201
okaya catalog
RA-362MS
LE334-M
XYE104
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Untitled
Abstract: No abstract text available
Text: Advance‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock
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128Mb:
MT48H8M16LF
MT48H4M32LF
09005aef82ea3742/Source:
09005aef82ea3752
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Untitled
Abstract: No abstract text available
Text: 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • Vdd/Vddq = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock
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128Mb:
MT48H8M16LF
MT48H4M32LF
09005aef832ff1ea/Source:
09005aef832ff1ac
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8M16
Abstract: MT48H4M32
Text: 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration
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128Mb:
MT48H8M16LF
MT48H4M32LF
09005aef832ff1ea
8M16
MT48H4M32
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive
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128Mb:
MT48H8M16LF
MT48H4M32LF
09005aef832ff1ea
09005aef832ff1ac
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Untitled
Abstract: No abstract text available
Text: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)
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128Mb:
MT46H8M16LF
MT46H4M32LF
09005aef82ce3074/Source:
09005aef82ce20c9
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474 K5C capacitor
Abstract: 104 K5C capacitor smd k77 RDE5C2A 224Z 100V X8G 100V 474 K1C capacitor K5C MURATA AEC-Q200 marking wk1
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering.
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C49E-21
474 K5C capacitor
104 K5C capacitor
smd k77
RDE5C2A
224Z 100V
X8G 100V
474 K1C capacitor
K5C MURATA
AEC-Q200
marking wk1
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elpida lpddr2
Abstract: Elpida LPDDR2 Memory lpddr2 samsung* lpddr2 micron lpddr2 samsung lpddr2 ELPIDA lpddr lpddr lpddr2 datasheet ELPIDA mobile dram LPDDR2
Text: 128Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks MT46H4M32LF – 1 Meg x 32 x 4 Banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 8 Meg x 16 2 Meg x 16 x 4 banks – 4 Meg x 32 (1 Meg x 32 x 4 banks)
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128Mb:
MT46H8M16LF
MT46H4M32LF
60-ball
90-ball
09005aef8331b3e9
elpida lpddr2
Elpida LPDDR2 Memory
lpddr2
samsung* lpddr2
micron lpddr2
samsung lpddr2
ELPIDA lpddr
lpddr
lpddr2 datasheet
ELPIDA mobile dram LPDDR2
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s11 stopping compound
Abstract: DEF01
Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)
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128Mb:
MT46H8M16LF
MT46H4M32LF
138ns.
09005aef8331b3e9/Source:
09005aef8331b3ce
s11 stopping compound
DEF01
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)
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128Mb:
MT46H8M16LF
MT46H4M32LF
09005aef8331b3e9
09005aef8331b3ce
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104k 630 capacitor
Abstract: M.104 K5C smd k77 RDEF11H223Z0 224 K5C capacitor
Text: C49E.pdf May.10,2011 Radial Lead Type Monolithic Ceramic Capacitors Cat.No.C49E-21 C49E.pdf May.10,2011 !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc.
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C49E-21
DC25V-DC100V)
104k 630 capacitor
M.104 K5C
smd k77
RDEF11H223Z0
224 K5C capacitor
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ELPIDA lpddr
Abstract: 100 LMR 40
Text: 128Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks MT46H4M32LF – 1 Meg x 32 x 4 Banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 8 Meg x 16 2 Meg x 16 x 4 banks – 4 Meg x 32 (1 Meg x 32 x 4
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128Mb:
MT46H8M16LF
MT46H4M32LF
09005aef8331b3e9
ELPIDA lpddr
100 LMR 40
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