Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744761130A LF Keramik-SMD-Induktivität WE-KI Ceramic-SMD-Inductor WE-KI DATUM / DATE : 2008-07-22 A Mechanische Abmessungen / dimensions:
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44761130A
D-74638
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ansys darveaux
Abstract: JXA8900R IPACK2005-73239 pitarresi 53RD IPACK2005 Ansys led 5800-LV SMD 5AG A333
Text: Proceedings of IPACK2005 Proceedings of IPACK2005 ASME InterPACK '05 ASME InterPACK July 17-22, San Francisco, California,'05 USA July 17-22, San Francisco, California, USA IPACK2005-73239 IPACK2005-73239 Constitutive Relationship Development, Modeling and Measurement of Heat Stressing of Micro-SMD
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IPACK2005
IPACK2005-73239
ansys darveaux
JXA8900R
IPACK2005-73239
pitarresi
53RD
IPACK2005
Ansys led
5800-LV
SMD 5AG
A333
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Untitled
Abstract: No abstract text available
Text: Flexibility & Innovation …. DS0187 _04 22/05/01 DATA SHEET TSF1575-01 1575.42 MHZ GPS SAW FILTER PRELIMINARY SPECIFICATION PACKAGE 3.8X3.8 MM OR 3X3 MM SMD C D B E A F A F B E C D PRODUCT FEATURES : Ø LOW LOSS 3.8 mm Ø HIGH REJECTIONS Ø SMALL SMD PACKAGE
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TSF1575-01
DS0187
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248m
Abstract: No abstract text available
Text: SMD Shielded Type : CDRH * D * / * Standard Series DIMENSIONS (mm) LAND PATTERNS (mm) 外形寸法図 推奨ランド寸法 WIRE 線種 2.4 2.0 6.5 CONSTRUCTION 3.9 Max. 6.3 SMD Shielded Type Max. 2.0 Max. 6.2 3.2 CDRH5D18R 磁気構造図 ( 2.2µH - 22µH )
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CDRH5D18R
CDRH5D28R/HP
CDRH5D28R
CDRH5D18e
CDRH5D18R
CDRH5D18RNP
248m
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SMD TRANSISTOR L6
Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155
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STEVAL-ISS001V2
BAS16
100PPM
330UH
12X9MM
UBB-4R-D10T-1
SMD TRANSISTOR L6
transistor SMD Y1
y1 smd transistor
SMD TRANSISTOR Y1
1P smd transistor
y2 smd transistor
resistor smd 103
transistor smd R55
transistor smd j6
L6 smd transistor
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HVU202A
Abstract: TBB1016 TBB1016RMTL-E
Text: TBB1016 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier REJ03G1327-0200 Rev.2.00 Aug 22, 2006 Features • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction.
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TBB1016
REJ03G1327-0200
PTSP0006JA-A
TBB1016
HVU202A
TBB1016RMTL-E
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Untitled
Abstract: No abstract text available
Text: SMD LED Product Data Sheet LTW-206DCG-E2HH Spec No.: DS22-2013-0107 Effective Date: 10/22/2013 Revision: B LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660
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LTW-206DCG-E2HH
DS22-2013-0107
BNS-OD-FC001/A4
EIA-471
BNS-OD-C131/A4
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222 smd
Abstract: smd 431 0402 smd RR0510P-561-D RES,510 ohm RR0510P-101-D rr0510p301d res 0402
Text: Part Count Digi-Key Part Number Susumu Part Number 1 RR05P100DCT-ND RR0510P-101-D 2 RR05P110DCT-ND RR0510P-111-D 3 RR05P120DCT-ND RR0510P-121-D 4 RR05P130DCT-ND RR0510P-131-D 5 RR05P150DCT-ND RR0510P-151-D 6 RR05P160DCT-ND RR0510P-161-D 7 RR05P180DCT-ND RR0510P-181-D
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RR05P100DCT-ND
RR0510P-101-D
RR05P110DCT-ND
RR0510P-111-D
RR05P120DCT-ND
RR0510P-121-D
RR05P130DCT-ND
RR0510P-131-D
RR05P150DCT-ND
RR0510P-151-D
222 smd
smd 431
0402 smd
RR0510P-561-D
RES,510 ohm
RR0510P-101-D
rr0510p301d
res 0402
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PBY 386
Abstract: NBQ201209T-121Y-S land pattern 0805 PBY160808T-601Y SCDS124T PBY100505T-100Y-S CLH1608T-10NJ-S SBK201209T-202Y-S SCD0403T PBY160808T-600Y-S
Text: INDEX YAGEO CORPORATION 2 22 26 30 33 36 40 47 51 55 66 74 85 100 101 102 105 106 108 111 115 123 129 135 137 138 139 140 144 152 154 158 159 161 163 164 165 166 167 168 173 174 175 179 180 Multilayer Ferrite Chip Beads [ SB/PB/UP/NB/GB Series ] Multilayer Ferrite Chip Beads [ BA Series ]
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24Hrs.
1000Hrs.
PBY 386
NBQ201209T-121Y-S
land pattern 0805
PBY160808T-601Y
SCDS124T
PBY100505T-100Y-S
CLH1608T-10NJ-S
SBK201209T-202Y-S
SCD0403T
PBY160808T-600Y-S
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SL1016
Abstract: PBY160808T-201Y-N PBY160808T-600Y-N PBY160808T-601Y-N PBY100505T-121Y-N PBY160808T-110Y-N UPB321611T-151Y-N smd diode Lf PBY201209T-601Y-N PBY321611T-601Y-N
Text: www.yageo.com RoHS Compliant ISO-9001, ISO-14001 CERTIFIED INDUCTORS / BEADS INDEX 4 18 21 28 33 37 42 48 51 55 58 62 66 69 72 78 81 84 88 94 97 106 110 115 129 134 137 145 148 151 156 158 161 164 168 172 175 179 183 186 SMD Chip Beads [SB/NB/HF/GB/PB/UPB Series]
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ISO-9001,
ISO-14001
SL1016
PBY160808T-201Y-N
PBY160808T-600Y-N
PBY160808T-601Y-N
PBY100505T-121Y-N
PBY160808T-110Y-N
UPB321611T-151Y-N
smd diode Lf
PBY201209T-601Y-N
PBY321611T-601Y-N
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3225 k275
Abstract: 4032 K275 VARISTOR k275 3225 VARISTOR k275 diode k275 4032 07 k275 varistor varistor s20 k320 cu3225 k275 varistor s10 k275 Siemens varistor family
Text: Contents Type Survey 5 8 General Technical Information 15 Selection Procedure 35 Application and Design Examples 51 Quality 79 SMD Varistors 89 Disk Varistors 115 Block Varistors Strap Varistors 161 167 PowerDisk Arrester Blocks 171 173 Derating Curves V/I Characteristics
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4032 K275
Abstract: 3225 k275 VARISTOR k275 VARISTOR k275 3225 3225 k50 varistor diode k275 4032 cu3225 k275 07 k275 varistor VARISTOR S14 K275 VARISTOR s07 K20
Text: Contents Type Survey 5 8 General Technical Information 15 Selection Procedure 35 Application and Design Examples 51 Quality 79 SMD Varistors 89 Disk Varistors 115 Block Varistors Strap Varistors 161 167 PowerDisk Arrester Blocks 171 173 Derating Curves V/I Characteristics
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Untitled
Abstract: No abstract text available
Text: 1.6x1.5mm BI-COLOR SMD CHIP LED LAMP KPTB-1615SURKCGKC HYPER RED GREEN Features Description 1.6mmx1.5mm SMT LED, 0.7mm THICKNESS. The Hyper Red source color devices are made with LOW POWER CONSUMPTION. DH InGaAlP on GaAs substrate Light Emitting Diode. WIDE VIEWING ANGLE.
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KPTB-1615SURKCGKC
2000PCS
DSAB3427
KPTB-1615SURKCGKC
MAR/22/2005
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KPTB-1615YSGC
Abstract: No abstract text available
Text: 1.6x1.5mm BI-COLOR SMD CHIP LED LAMP KPTB-1615YSGC YELLOW SUPER BRIGHT GREEN Description Features 1.6mmx1.5mm SMT LED, 0.7mm THICKNESS. The Yellow source color devices are made with LOW POWER CONSUMPTION. Gallium Arsenide Phosphide on Gallium Phosphide WIDE VIEWING ANGLE.
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KPTB-1615YSGC
2000PCS
DSAA5825
KPTB-1615YSGC
MAR/22/2005
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Untitled
Abstract: No abstract text available
Text: 1.6x1.5mm BI-COLOR SMD CHIP LED LAMP KPTB-1615SYKCGKC SUPER BRIGHT YELLOW GREEN Description Features 1.6mmx1.5mm SMT LED, 0.7mm THICKNESS. The Super Bright Yellow source color devices are LOW POWER CONSUMPTION. made with DH InGaAlP on GaAs substrate Light
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KPTB-1615SYKCGKC
2000PCS
DSAC0138
KPTB-1615SYKCGKC
MAR/22/2005
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KPTB-1615SURKSGC
Abstract: smd diode v5
Text: 1.6x1.5mm BI-COLOR SMD CHIP LED LAMP KPTB-1615SURKSGC HYPER RED SUPER BRIGHT GREEN Description Features 1.6mmx1.5mm SMT LED, 0.7mm THICKNESS. The Hyper Red source color devices are made with DH LOW POWER CONSUMPTION. InGaAlP on GaAs substrate Light Emitting Diode.
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KPTB-1615SURKSGC
2000PCS
DSAB4508
KPTB-1615SURKSGC
MAR/22/2005
smd diode v5
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4DFA-1227B-10
Abstract: 4DFA-1575B-10 4DFA-886A-10
Text: 4DFASP Measurement values: 4DFA-1575B-10 Passband Insertion Loss 1.42dB Max. Passband Ripple 0.12dB Passband V.S.W.R. 1.13 Max. Attenuation at 1540.4MHz 11.3dB at 1610.4MHz 8.9dB at 1435.4MHz 44.2dB at 1715.4MHz 33.9dB STANDARD DEVICES SELECTION GUIDE The Part Numbers shown in the table below are standard devices which are
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4DFA-1575B-10
4DFA-836E-10
4DFA-881E-10
4DFA-964E-10
4DFA-902E-10
4DFA-947E-10
4DFA-866A-10
4DFA-1227B-10
4DFA-1575B-10
4DFA-886A-10
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Untitled
Abstract: No abstract text available
Text: 1.6x1.5mm BI-COLOR SMD CHIP LED LAMP KPTB-1615ESGC HIGH EFFICIENCY RED SUPER BRIGHT GREEN Features Description 1.6mmx1.5mm SMT LED, 0.7mm THICKNESS. LOW POWER CONSUMPTION. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide
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KPTB-1615ESGC
2000PCS
KPTB-1615ESGC
DSAB6000
MAR/22/2005
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Untitled
Abstract: No abstract text available
Text: 1.6x1.5mm BI-COLOR SMD CHIP LED LAMP ATTENTION KPTB-1615PBVGC BLUE / GREEN OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description Features 1.6mmx1.5mm SMT LED, 0.7mm THICKNESS. The Blue source color devices are made with InGaN
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KPTB-1615PBVGC
2000PCS
KPTB-1615PBVGC
DSAE6939
MAR/22/2005
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TRANSISTOR BC 448 smd
Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors
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BRY61
BRY62
OT143B
TRANSISTOR BC 448 smd
JA101P
smd transistor npn 491
transistor TO-92 bc108
transistor pn2222
BC853B
transistor MPSA77
jc5010 215
BC307 smd
2PB601A
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fo-215
Abstract: No abstract text available
Text: 22 TYPE 4DFA TYPE 4DFA 2 Pole SMD Type Frequency Range: 800-2500MHz Temperature Range: -25°C to +85°C * Depends on center frequency (Unit: mm) Characteristics Measurement values: 4DFA-1575B-10 Passband insertion Loss Passband Ripple Passband V.S.W.R. Attenuation
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OCR Scan
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800-2500MHz
4DFA-1575B-10
300MHz
fo-215
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UE-LR500NWX-1XE
Abstract: UEPT440NW UE-ST191YGX-10U UE-ST150PGX-10V UE-PT440PG ue-pt440NW UELR500NWX-1XK UE-ST191NBX-10U hp550 ue-pt440
Text: Lights up vi$| Bright your I Catalogue 2009 INDEX ABOUT US • BINNING RANK CERAMIC ■ METAL ■ INTRODUCTION OF UPEC ■ WARM WHITE 1 ■ COOL WHITE 2 UE-HP650 3 UE-HP843 4 UE-HP845 5 ■ UE-HP550 MODULE PLCC ■ SMD FLUX ■ UE-ST1 50 series 22 ■ UE-ST1 72 series
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OCR Scan
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ue-hp650
ue-hp843
ue-hp845
ue-hp550
ue-hp800
ue-hp800-120
ue-hp803-60
ue-hp803-120
ue-hp810-120
ue-hp81
UE-LR500NWX-1XE
UEPT440NW
UE-ST191YGX-10U
UE-ST150PGX-10V
UE-PT440PG
ue-pt440NW
UELR500NWX-1XK
UE-ST191NBX-10U
hp550
ue-pt440
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EPE6037
Abstract: EPE6060GM
Text: Isolation Transformers for 10-Base T Schematic 1 Sec. 6 5 4 1 2 Pri. 3 Sec. 6 4 12 3 4 2 3 8 24 1 2 3 7 1 5 6 7 1 4 5 Schematic 8 Sec. 3 4 5 6 7 2 p n rrrn n rj 6 18 p n n rm n r| 1615 Pri. Schematic 3 Sec. 15 1411 10 Schematic 6 Schematic 9 Sec. 1513 1210
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OCR Scan
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10-Base
QAF-CS15I
EPE6037
EPE6060GM
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MO-211
Abstract: 438G1
Text: REVISIONS LTR DESCRIPTION SEE PACKAGE XI DESIGNATOR A B C D E F G H J K L M N P R S T U V W X Y 2 3 4 5 6 XI PACKAGE WI DTH i3 0 / £ m 1285 1311 1336 1361 1 387 1412 1 438 1463 1 488 1514 1539 1565 1590 1615 1641 1666 1692 1717 1742 1768 1793 1819 1844
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OCR Scan
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005mm;
CORN87
MKT-BPA09XXX
MO-211
438G1
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