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    SMALL OUTLINE TRANSISTOR CR Search Results

    SMALL OUTLINE TRANSISTOR CR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH3R10AQM Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    SMALL OUTLINE TRANSISTOR CR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor

    Abstract: transistor SOT 23 JAPAN transistor MA05C transistor sot NS Package Number MA03B MA03B 223 transistor Supersot 6 SOT-223
    Text: Small Outline Transistor SOT-23, SOT-223, Super-SOT 3 Lead Molded SOT-23, High Profile NS Package Number M03A 2000 National Semiconductor Corporation MS101169 www.national.com Small Outline Transistor (SOT-23, SOT-223, Super-SOT) May 1999 Small Outline Transistor (SOT-23, SOT-223, Super-SOT)


    Original     		PDF OT-23, OT-223, MS101169 transistor transistor SOT 23 JAPAN transistor MA05C transistor sot NS Package Number MA03B MA03B 223 transistor Supersot 6 SOT-223

    D217 OPTO

    Abstract: opto transistor moc MOCD217 RS481A D217
    Text: , MOTOROLA SEMICONDUCTOR ● TECHNICAL Order this document by MOCD217/D DATA Dual Channel Small Outline Optoisolators MOCQ217 Transistor Output [CTR = 100% Min] These devices consist of two optically coupled to two monolithic mountable, small outline, plastic


    Original     		PDF MOCD217/D MOCQ217 MKI45BP, 2PHX34204P-I D217 OPTO opto transistor moc MOCD217 RS481A D217

    OPTOCOUPLERs MARKING CODE

    Abstract: MOC211-M MOC212-M MOC213-M
    Text: SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic


    Original     		PDF MOC211-M MOC212-M MOC213-M E90700, MOC211V-M) OPTOCOUPLERs MARKING CODE MOC211-M MOC212-M MOC213-M

    Untitled

    Abstract: No abstract text available
    Text: SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic


    Original     		PDF MOC211-M MOC212-M MOC213-M E90700, MOC211V-M)

    C 5478 transistor

    Abstract: 12205 transistor RF TRANSISTOR K 2191 IC AT 6884 transistor 7929 TRANSISTOR NPN 6822
    Text: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance


    Original     		PDF NE894M13 NE894M13 C 5478 transistor 12205 transistor RF TRANSISTOR K 2191 IC AT 6884 transistor 7929 TRANSISTOR NPN 6822

    TRANSISTOR 9642

    Abstract: transistor s11 s12 s21 s22
    Text: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance


    Original     		PDF NE894M13 NE894M13 TRANSISTOR 9642 transistor s11 s12 s21 s22

    nec 16312

    Abstract: 2SC5800 NE851M03 NE851M03-T3 S21E nec 9701
    Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS


    Original     		PDF NE851M03 NE851M03 nec 16312 2SC5800 NE851M03-T3 S21E nec 9701

    nec 16312 transistor

    Abstract: cce 7100 BF 6591 sis 968 nec 16312 kf 203 transistor NE851M03 16312 transistor SiS 671 transistor KF 507
    Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS


    Original     		PDF NE851M03 NE851M03 2e-15 AN1026. nec 16312 transistor cce 7100 BF 6591 sis 968 nec 16312 kf 203 transistor 16312 transistor SiS 671 transistor KF 507

    kf 13002

    Abstract: TRANSISTOR 9642 KF 13002 F NE894M13 transistor k 2723 2SC5787 S21E transistor x 13002 mje 3055 transistor bf 393
    Text: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance


    Original     		PDF NE894M13 NE894M13 kf 13002 TRANSISTOR 9642 KF 13002 F transistor k 2723 2SC5787 S21E transistor x 13002 mje 3055 transistor bf 393

    NE681M13

    Abstract: 2SC5615 NE681M13-T3-A NE681 NE681M13-A S21E
    Text: NEC's NPN SILICON TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance


    Original     		PDF NE681M13 NE681M13 2SC5615 NE681M13-T3-A NE681 NE681M13-A S21E

    MOC211-M

    Abstract: MOC212-M MOC213-M
    Text: SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic


    Original     		PDF MOC211-M MOC212-M MOC213-M E90700, MOC211V-M) MOC211-M MOC212-M MOC213-M

    2SC5618

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M13 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 11 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –


    Original     		PDF NE687M13 NE687M13 24-Hour 2SC5618

    MOC206-M

    Abstract: MOC205-M MOC207-M MOC208-M Optocouplers 205 MOC207M
    Text: SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC205-M MOC206-M MOC207-M MOC208-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic


    Original     		PDF MOC205-M MOC206-M MOC207-M MOC208-M E90700, MOC205V-M) MOC206-M MOC205-M MOC207-M MOC208-M Optocouplers 205 MOC207M

    nec 16312 transistor

    Abstract: Nec K 872 cce 7100 nec 16312 BJT IC Vce bjt npn m03 AT 1004 S12 hfe 4793 Laser Diode 808 2 pin 1000 mw transistor KF 507
    Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance • IDEAL FOR ≤ 3 GHz OSCILLATORS


    Original     		PDF NE851M03 NE851M03 nec 16312 transistor Nec K 872 cce 7100 nec 16312 BJT IC Vce bjt npn m03 AT 1004 S12 hfe 4793 Laser Diode 808 2 pin 1000 mw transistor KF 507

    ic 7738

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance


    Original     		PDF NE851M13 NE851M13 15e-12 170e-15 ic 7738

    2SC5617

    Abstract: NE685M13 NE685 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –


    Original     		PDF NE685M13 NE685M13 24-Hour 2SC5617 NE685 S21E

    2SC5615

    Abstract: NE681 NE681M13 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M13 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –


    Original     		PDF NE681M13 NE681M13 24-Hour 2SC5615 NE681 S21E

    NE688M13

    Abstract: EIAJ 2SC5616 NE688 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 OUTLINE DIMENSIONS Units in mm FEATURES • • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –


    Original     		PDF NE688M13 NE688M13 24-Hour EIAJ 2SC5616 NE688 S21E

    ic 7738

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance


    Original     		PDF NE851M13 NE851M13 ic 7738

    MOC205-M

    Abstract: MOC206-M MOC207-M MOC208-M MOC207M
    Text: SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC205-M MOC206-M MOC207-M MOC208-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic


    Original     		PDF MOC205-M MOC206-M MOC207-M MOC208-M E90700, MOC205V-M) MOC205-M MOC206-M MOC207-M MOC208-M MOC207M

    MOCD208

    Abstract: MOTOROLA OPTOELECTRONIC MOCD207 MOTOROLA OPTOELECTRONIC led motorola opto coupler I-H-1000 mocD207 OPTO
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MOCD207/D DATA MOCD207 [CTR = 10*2OO%] Dual Channel Small Outline Optoisolators MOCD208 [CTR = 4&125%] Transistor Output Motorola These devices consist of two optically coupled to two monolithic mountable, small outline, plastic


    Original     		PDF MOCD207/D MOCD207 MOCD208 MK145BP, 2PHX34254P+ MOCD208 MOTOROLA OPTOELECTRONIC MOCD207 MOTOROLA OPTOELECTRONIC led motorola opto coupler I-H-1000 mocD207 OPTO

    opto transistor moc

    Abstract: MOCD211 H11AA1M MOCD211R2 D211 OPTO 4n33 4n25 H11AA4M MOC3081M 4N35M H11D1M
    Text: Dual Channel Small Outline Optoisolators MOCD211 Transistor Output The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high


    Original     		PDF MOCD211 E90700, InformC215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M opto transistor moc H11AA1M MOCD211R2 D211 OPTO 4n33 4n25 H11AA4M MOC3081M 4N35M H11D1M

    transistor c 3531

    Abstract: UPA826
    Text: PRELIMINARY DATA SHEET UPA826TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Package Outline TS 06 (Top View) Cre = 0.4 pF TYP SMALL PACKAGE STYLE:


    OCR Scan     		PDF UPA826TF NE685 UPA826TF PA826TF-T1 24-Hour transistor c 3531 UPA826

    2sc3246

    Abstract: transistor 2sc3246 15A transistor 2SA1286 HIGH CURRENT NPN SILICON TRANSISTOR
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3246 FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3246 is a silicon NPN epitaxial type transistor, Designed with high collector current and high OUTLINE DRAWING


    OCR Scan     		PDF 2SC3246 2SC3246 2SA1286. 900mW transistor 2sc3246 15A transistor 2SA1286 HIGH CURRENT NPN SILICON TRANSISTOR