transistor
Abstract: transistor SOT 23 JAPAN transistor MA05C transistor sot NS Package Number MA03B MA03B 223 transistor Supersot 6 SOT-223
Text: Small Outline Transistor SOT-23, SOT-223, Super-SOT 3 Lead Molded SOT-23, High Profile NS Package Number M03A 2000 National Semiconductor Corporation MS101169 www.national.com Small Outline Transistor (SOT-23, SOT-223, Super-SOT) May 1999 Small Outline Transistor (SOT-23, SOT-223, Super-SOT)
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OT-23,
OT-223,
MS101169
transistor
transistor SOT 23
JAPAN transistor
MA05C
transistor sot
NS Package Number MA03B
MA03B
223 transistor
Supersot 6
SOT-223
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D217 OPTO
Abstract: opto transistor moc MOCD217 RS481A D217
Text: , MOTOROLA SEMICONDUCTOR ● TECHNICAL Order this document by MOCD217/D DATA Dual Channel Small Outline Optoisolators MOCQ217 Transistor Output [CTR = 100% Min] These devices consist of two optically coupled to two monolithic mountable, small outline, plastic
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MOCD217/D
MOCQ217
MKI45BP,
2PHX34204P-I
D217 OPTO
opto transistor moc
MOCD217
RS481A
D217
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OPTOCOUPLERs MARKING CODE
Abstract: MOC211-M MOC212-M MOC213-M
Text: SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
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MOC211-M
MOC212-M
MOC213-M
E90700,
MOC211V-M)
OPTOCOUPLERs MARKING CODE
MOC211-M
MOC212-M
MOC213-M
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Untitled
Abstract: No abstract text available
Text: SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
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MOC211-M
MOC212-M
MOC213-M
E90700,
MOC211V-M)
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C 5478 transistor
Abstract: 12205 transistor RF TRANSISTOR K 2191 IC AT 6884 transistor 7929 TRANSISTOR NPN 6822
Text: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance
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NE894M13
NE894M13
C 5478 transistor
12205 transistor RF
TRANSISTOR K 2191
IC AT 6884
transistor 7929
TRANSISTOR NPN 6822
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TRANSISTOR 9642
Abstract: transistor s11 s12 s21 s22
Text: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance
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NE894M13
NE894M13
TRANSISTOR 9642
transistor s11 s12 s21 s22
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nec 16312
Abstract: 2SC5800 NE851M03 NE851M03-T3 S21E nec 9701
Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS
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NE851M03
NE851M03
nec 16312
2SC5800
NE851M03-T3
S21E
nec 9701
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nec 16312 transistor
Abstract: cce 7100 BF 6591 sis 968 nec 16312 kf 203 transistor NE851M03 16312 transistor SiS 671 transistor KF 507
Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS
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NE851M03
NE851M03
2e-15
AN1026.
nec 16312 transistor
cce 7100
BF 6591
sis 968
nec 16312
kf 203 transistor
16312 transistor
SiS 671
transistor KF 507
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kf 13002
Abstract: TRANSISTOR 9642 KF 13002 F NE894M13 transistor k 2723 2SC5787 S21E transistor x 13002 mje 3055 transistor bf 393
Text: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance
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NE894M13
NE894M13
kf 13002
TRANSISTOR 9642
KF 13002 F
transistor k 2723
2SC5787
S21E
transistor x 13002
mje 3055
transistor bf 393
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NE681M13
Abstract: 2SC5615 NE681M13-T3-A NE681 NE681M13-A S21E
Text: NEC's NPN SILICON TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance
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NE681M13
NE681M13
2SC5615
NE681M13-T3-A
NE681
NE681M13-A
S21E
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MOC211-M
Abstract: MOC212-M MOC213-M
Text: SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
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MOC211-M
MOC212-M
MOC213-M
E90700,
MOC211V-M)
MOC211-M
MOC212-M
MOC213-M
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2SC5618
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M13 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 11 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –
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NE687M13
NE687M13
24-Hour
2SC5618
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MOC206-M
Abstract: MOC205-M MOC207-M MOC208-M Optocouplers 205 MOC207M
Text: SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC205-M MOC206-M MOC207-M MOC208-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
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MOC205-M
MOC206-M
MOC207-M
MOC208-M
E90700,
MOC205V-M)
MOC206-M
MOC205-M
MOC207-M
MOC208-M
Optocouplers 205
MOC207M
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nec 16312 transistor
Abstract: Nec K 872 cce 7100 nec 16312 BJT IC Vce bjt npn m03 AT 1004 S12 hfe 4793 Laser Diode 808 2 pin 1000 mw transistor KF 507
Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance • IDEAL FOR ≤ 3 GHz OSCILLATORS
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NE851M03
NE851M03
nec 16312 transistor
Nec K 872
cce 7100
nec 16312
BJT IC Vce
bjt npn m03
AT 1004 S12
hfe 4793
Laser Diode 808 2 pin 1000 mw
transistor KF 507
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ic 7738
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance
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NE851M13
NE851M13
15e-12
170e-15
ic 7738
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2SC5617
Abstract: NE685M13 NE685 S21E
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –
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NE685M13
NE685M13
24-Hour
2SC5617
NE685
S21E
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2SC5615
Abstract: NE681 NE681M13 S21E
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M13 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –
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NE681M13
NE681M13
24-Hour
2SC5615
NE681
S21E
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NE688M13
Abstract: EIAJ 2SC5616 NE688 S21E
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 OUTLINE DIMENSIONS Units in mm FEATURES • • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –
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NE688M13
NE688M13
24-Hour
EIAJ
2SC5616
NE688
S21E
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PDF
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ic 7738
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance
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NE851M13
NE851M13
ic 7738
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PDF
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MOC205-M
Abstract: MOC206-M MOC207-M MOC208-M MOC207M
Text: SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC205-M MOC206-M MOC207-M MOC208-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
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MOC205-M
MOC206-M
MOC207-M
MOC208-M
E90700,
MOC205V-M)
MOC205-M
MOC206-M
MOC207-M
MOC208-M
MOC207M
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PDF
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MOCD208
Abstract: MOTOROLA OPTOELECTRONIC MOCD207 MOTOROLA OPTOELECTRONIC led motorola opto coupler I-H-1000 mocD207 OPTO
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MOCD207/D DATA MOCD207 [CTR = 10*2OO%] Dual Channel Small Outline Optoisolators MOCD208 [CTR = 4&125%] Transistor Output Motorola These devices consist of two optically coupled to two monolithic mountable, small outline, plastic
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MOCD207/D
MOCD207
MOCD208
MK145BP,
2PHX34254P+
MOCD208
MOTOROLA OPTOELECTRONIC
MOCD207
MOTOROLA OPTOELECTRONIC led
motorola opto coupler
I-H-1000
mocD207 OPTO
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opto transistor moc
Abstract: MOCD211 H11AA1M MOCD211R2 D211 OPTO 4n33 4n25 H11AA4M MOC3081M 4N35M H11D1M
Text: Dual Channel Small Outline Optoisolators MOCD211 Transistor Output The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high
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MOCD211
E90700,
InformC215-M
MOC223-M
MOC3011-M
MOC3021-M
MOC3031-M
MOC3041-M
MOC3051-M
MOC3062-M
opto transistor moc
H11AA1M
MOCD211R2
D211 OPTO
4n33 4n25
H11AA4M
MOC3081M
4N35M
H11D1M
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transistor c 3531
Abstract: UPA826
Text: PRELIMINARY DATA SHEET UPA826TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Package Outline TS 06 (Top View) Cre = 0.4 pF TYP SMALL PACKAGE STYLE:
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OCR Scan
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UPA826TF
NE685
UPA826TF
PA826TF-T1
24-Hour
transistor c 3531
UPA826
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2sc3246
Abstract: transistor 2sc3246 15A transistor 2SA1286 HIGH CURRENT NPN SILICON TRANSISTOR
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3246 FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3246 is a silicon NPN epitaxial type transistor, Designed with high collector current and high OUTLINE DRAWING
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2SC3246
2SC3246
2SA1286.
900mW
transistor 2sc3246
15A transistor
2SA1286
HIGH CURRENT NPN SILICON TRANSISTOR
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