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    SMA540B Search Results

    SMA540B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SMA540B STMicroelectronics ACTIVE BIASED RF TRANSISTOR Original PDF
    SMA540BTR STMicroelectronics Active Biased RF Transistor Original PDF

    SMA540B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT323-4L

    Abstract: SMA540B SMA540BTR
    Text: SMA540B Active Biased RF Transistor PRELIMINARY DATA • HIGH GAIN LOW NOISE AMPLIFIERS Gms = 19 dB at 1.8 GHz • CURRENT EASY ADJUSTABLE BY AN EXTERNAL RESISTOR • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 1.4-3.3 V • TRANSITION FREQUENCY 42 GHz


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    PDF SMA540B OT323-4L OT323-4L SMA540BTR SMA540B SOT323-4L SMA540BTR

    540B

    Abstract: AN1739 SMA540B
    Text: AN1739 APPLICATION NOTE AN LNA OPTIMIZED AT 2.45 GHz USING THE Si MMIC SMA540B R. Mazzurco, N. Micalizzi, G. Privitera Table 1: Data for Bleutooth/WLAN Applications f = 2.450 GHz Parameters Value Unit Vcc 3.3 V Icc 5 mA 2.2 dB Noise Figure Gain 13.9 dB RLin


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    PDF AN1739 SMA540B SMA540B 540B AN1739

    Untitled

    Abstract: No abstract text available
    Text: SMA540B Active Biased RF Transistor PRELIMINARY DATA • HIGH GAIN LOW NOISE AMPLIFIERS Gms = 19 dB at 1.8 GHz • CURRENT EASY ADJUSTABLE BY AN EXTERNAL RESISTOR • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 1.4-3.3 V • TRANSITION FREQUENCY 42 GHz


    Original
    PDF SMA540B OT343 OT343

    npn, transistor, sc 107 b

    Abstract: SMA540B SMA540BTR
    Text: SMA540B Active Biased RF Transistor PRELIMINARY DATA • HIGH GAIN LOW NOISE AMPLIFIERS Gms = 19 dB at 1.8 GHz • CURRENT EASY ADJUSTABLE BY AN EXTERNAL RESISTOR • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 1.4-3.3 V • TRANSITION FREQUENCY 42 GHz


    Original
    PDF SMA540B OT323-4L OT323-4L SMA540BTR SMA540B SMA54ation npn, transistor, sc 107 b SMA540BTR

    T28000

    Abstract: 540B AN1739 SMA540B
    Text: AN1739 APPLICATION NOTE AN LNA OPTIMIZED AT 2.45 GHz USING THE Si MMIC SMA540B R. Mazzurco, N. Micalizzi, G. Privitera Table 1: Data for Bleutooth/WLAN Applications f = 2.450 GHz Parameters Value Unit Vcc 3.3 V Icc 5 mA 2.2 dB Noise Figure Gain 13.9 dB RLin


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    PDF AN1739 SMA540B SMA540B T28000 540B AN1739

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


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    PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L