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    Text: SM8F231ST Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)9.0# I(DM) Max. (A) Pulsed I(D)6.0 @Temp (øC)100# IDM Max (@25øC Amb)36.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC)-55


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