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    SM 588 B TRANSISTORS Search Results

    SM 588 B TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SM 588 B TRANSISTORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: h "7 > y 7. $ / T ransistors DTB113ZK DTB113ZK g j 3 t r t  h 7 > '> '^ . ÿ i Digital Transistors (Includes Resistors) ^/Transistor Switch • #ä 1 », Dim ensions (Unit : mm) L T 'T > I.I I*— 1 .9 ± 0 .2 A - S B & t f f llJ ä c T 't S ( l if ill ïS


    OCR Scan     		DTB113ZK SC-59 100MHz PDF

    st2222A

    Abstract: PN2907A ST2907A
    Text: Transistors I PNP Medium Power Transistor Switching UMT2907A / SST2907A/MMST2907A / RXT2907A / PN2907A # External dim ensions (Units : mm) •Features 1 ) BV ceo< —40V ( lc = —10mA) 2 ) Complements the UM T2222AÆ ST2222A/MMST2222A/ RXT2222A/PN2222A.


    OCR Scan     		UMT2907A SST2907A/MMST2907A RXT2907A PN2907A --40V --10mA) T2222AÆ ST2222A/MMST2222A/ RXT2222A/PN2222A. st2222A PN2907A ST2907A PDF

    transistor 3904

    Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn
    Text: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.


    OCR Scan     		OT-23 CMPT491E CMPT591E OT-23 OT-223 CMPTA46 CMPTA96 CZTA46 CZTA96 transistor 3904 transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn PDF

    409LT

    Abstract: 409LT1
    Text: SILICON EPICAP DIODES MMBV409LT1* MV409* . . . designed for general frequency control and tuning applications; providing solid-state reliability in replacem ent of m echanical tuning methods. • High Q with G uaranteed M inim u m Values at VHF Frequencies


    OCR Scan     		MV409 409LT1 MMBV409LT1* MV409* OT-23 O-236AB) MMBV409LT1 MV409 409LT 409LT1 PDF

    RXT2907A

    Abstract: marking R2F MMST2907A PN2907A SST2907A T106 T110 UMT2907A transistor Marking code t03 Part marking SC70 bc
    Text: Transistors PNP Medium Power Transistor Switching i UM T2907A / SST2907A/M M ST2907A / RXT2907A / PN2907A 0 F e a tu re s # E x te rn a l dimensions (Units : mm) 1 ) B V ceo C —4 0 V ( l c = — 10m A ) UMT2907A 2 ) C o m p le m e n ts the U M T 2 2 2 2 A /S S T 2 2 2 2 A /M M S T 2 2 2 2 A /


    OCR Scan     		UMT2907A SST2907A/MMST2907A RXT2907A PN2907A UMT2Z2ZA/SST2222A/MMST2222 RXT2222A/PN2222A. SST2907A MMST2907A marking R2F PN2907A T106 T110 transistor Marking code t03 Part marking SC70 bc PDF

    TI 35X35 BGA 368 BGA

    Abstract: 547 B34 kl 668 sem 304
    Text: •SSSS D a t a S h e e t _ O K I A S I C P R O D U MG73Q000/74Q000 and MSM98Q000/99Q000 0.35iim Customer Structured Arrays April 1999 Oki Semiconductor CONTENTS D


    OCR Scan     		MG73Q000/74Q000 MSM98Q000/99Q000 35iim G73Q/74Q 98Q/99Q 98Q/99Q108X108 35x35 27x27 TI 35X35 BGA 368 BGA 547 B34 kl 668 sem 304 PDF

    TA143E

    Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
    Text: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0


    OCR Scan     		2SK1973F5 2SK2041 2SK2042 2SK2094F5 2SK2103 RU101 RU201 RU901 TA143E 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE PDF

    2SD1966

    Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
    Text: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5


    OCR Scan     		2SA785 2SA790 2SA790M 2SA806 2SA821 2SA825 2SA825S 2SA83Û 2SA830S 2SA854 2SD1966 2SD1255M 2SB maintenance IMB6 2SC2808 PDF

    BGA Package 14x14

    Abstract: IC LM 324 ic LM 356 oki cross oki pitch MG73Q MG74Q MSM98Q MSM99Q
    Text: : D ata S h e e t K MG73Q000/74Q000 and MSM98Q000/99Q000 0.35|im Customer Structured Arrays April 1999 Oki Semiconductor This Material Copyrighted By Its Respective Manufacturer CONTENTS D escrip tio n .1


    OCR Scan     		MG73Q000/74Q000 MSM98Q000/99Q000 MG73Q/74Q MSM98Q/99Q Q076X076 98Q/99Q080X080 98Q/99Q084X084 98Q/99Q088X088 98Q/99Q092X092 98Q/99Q096X096 BGA Package 14x14 IC LM 324 ic LM 356 oki cross oki pitch MG73Q MG74Q MSM98Q MSM99Q PDF

    marking bt5

    Abstract: MMST2907A PN2907A RXT2907A SST2907A T106 T116 UMT2907A
    Text: Transistors PNP Medium Power Transistor Switching I UM T2907A / SST2907A/M M ST2907A / RXT2907A / PN2907A •F e a tu r e s 1 ) BV ceo< —40V ( lc = —10mA) 2 ) Complem ents the UM T2222A/SST2222A/M M ST2222A/ RXT2222A/PN2222A. •E x te r n a l dim ensions (Units : mm)


    OCR Scan     		UMT2907A SST2907A/MMST2907A RXT2907A PN2907A UMT2222A/SST2222A/MMST2222A/ RXT2222A/PN2222A. SST2907A MMST2907A marking bt5 PN2907A T106 T116 PDF

    MSM91

    Abstract: No abstract text available
    Text: O K I Semiconductor M S M 9 1 S 000 _ 0.8|.im Customer Structured Array for High-Performance, 3 and 5 Volt Applications DESCRIPTION O K I's M SM 91S000 Custom er Structured Array family is a high performance, high-density sem icus­ tom product using O K I's 0.8|j.m drawn 0.6|am effective , two layer metal, polysilicide, dual well pro­


    OCR Scan     		91S000 RS6000 PC386 MSM91S000 MSM91S000 MSM91 PDF

    TI 9023 IC data

    Abstract: 2SC4226 APPLICATION NOTES
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA81 OT HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The /xPA81 OT has built-in 2 low-voltage transistors which are designed to PACKAGE DRAW INGS


    OCR Scan     		uPA810T 2SC4226) /xPA81 TI 9023 IC data 2SC4226 APPLICATION NOTES PDF

    613 GB 123 CT

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S


    OCR Scan     		uPA812T 2SC4227) /xPA812T 613 GB 123 CT PDF

    BC5508

    Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
    Text: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes


    OCR Scan     		OT-23 350mW CMPTB099 CMPT2222A trK1000V) CMPS5064 OT-23 OT-89 CQ89D CQ89M BC5508 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw PDF

    transistor 8331

    Abstract: AD583BD AD588BD AD588TQ rtd with wheatstone bridge K4515 AD588 AD588AQ AD588JQ AD588SE
    Text: ANALOG ► DEVICES High Precision Voltage Reference FUNCTIONAL BLOCK DIAGRAM FEATURES Low Drift: 1.5 ppm/°C Low Initial Error: 1 mV Pin-Program m able Output +10 V, +5 V, ± 5 V Tracking, - 5 V, -1 0 V Flexible Output Force and Sense Terminals High Impedance Ground Sense


    OCR Scan     		MIL-STD-883 AD588 transistor 8331 AD583BD AD588BD AD588TQ rtd with wheatstone bridge K4515 AD588AQ AD588JQ AD588SE PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM38S0000/MSM98S000 0.8|im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays DESCRIPTION OKI's 0.8 tm ASIC products, specially designed for mixed 3-V /5-V applications, are now available in both Sea Of Gates (SOG and Customer Structured Array (CSA) architectures. Both the SOG-based MSM38S


    OCR Scan     		MSM38S0000/MSM98S000 MSM38S MSM98S 16-Mbit 38S/98S 44x44 35x35 28x28 33x33 38x38 PDF

    ps 4512 diode

    Abstract: SS44A P61089 PS-4512 diode
    Text: T1SP61089 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS NOVEMBER 1995 - R EVEED JAN U A W 199« PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION • • Dual Voltage-Programmable Protectors - Wide 0 to -80 V Programming Range - Low 5 mA max. Gate Triggering Current


    OCR Scan     		T1SP61089 TISP61089 TISP61089. ps 4512 diode SS44A P61089 PS-4512 diode PDF

    101ra100

    Abstract: 22RC10 71RA120 36RA80 101RC60 PR002W 40RCS60 151ra100 250pa120 250RA80
    Text: EUROPEAN CATALOGUE CATALOGO EUROPEO EUROPAISCHER KATALOG CATALOGUE EUROPEEN In tro d u c tio n The products specified in this shortform catalogue have been selected from the comprehensive range manufactured by the International Rectifier group of Companies.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES High Precision Voltage Reference AD588* FUNCTIONAL BLOCK DIAGRAM FEATURES Low Drift: 1.5 ppm/°C Low Initial Error: 1 mV Pin-Programmable Output +10 V, +5 V, ± 5 V Tracking, - 5 V, -1 0 V Flexible Output Force and Sense Terminals High Impedance Ground Sense


    OCR Scan     		MIL-STD-883 AD588 PDF

    HFBR-1502

    Abstract: HFBR-2501 3154-RTV photo interrupter "snap-in" marking 78 connector HFBR-0500 HFBR-3510 HP photo interrupter module HFBR-2502 hfbr-2527 HFBR2501
    Text: SNAP-IN FIBER OPTIC LINKS TRANSMITTERS, RECEIVERS, CABLE AND CONNECTORS HFBR-0500 SERIES Features • GUARANTEED LINK PERFORMANCE OVER TEMPERATURE High Speed Links: dc to 5 MBd Extended Distance Links up to 111 m Low Current Links: 6 mA Peak Supply Current for


    OCR Scan     		HFBR-160X/2602 HFBR-2602 HFBR-1502 HFBR-2501 3154-RTV photo interrupter "snap-in" marking 78 connector HFBR-0500 HFBR-3510 HP photo interrupter module HFBR-2502 hfbr-2527 HFBR2501 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    KE4416

    Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
    Text: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents


    OCR Scan     		DH3467C 2N3467 14-pin O-106 O-220 KE4416 ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375 PDF

    2N5010

    Abstract: 2N5011 2N5015 2N5015S transistor U4 U430
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 21 April 2010. MIL-PRF-19500/727B 21 January 2010 SUPERSEDING MIL-PRF-19500/727A 15 April 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,


    Original     		MIL-PRF-19500/727B MIL-PRF-19500/727A 2N5010 2N5015, 2N5010S 2N5015S, 2N5010U4 2N5015U4, MIL-PRF-19500. 2N5011 2N5015 2N5015S transistor U4 U430 PDF

    MH 74151

    Abstract: Cxt01 38S02 74151 data sheet 74151 pin configuration bel 188 transistor MSM98S 065x0
    Text: O K I Semiconductor MSM38S0000/MSM98S000 0.8|im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays D E S C R IP TIO N OKI's 0.8 im ASIC products, specially designed for mixed 3-V /5-V applications, are now available in both Sea Of Gates (SOG and Customer Structured Array (CSA) architectures. Both the SOG-based MSM38S


    OCR Scan     		MSM38S0000/MSM98S000 MSM38S MSM98S 16-Mbit MSM38S/98S 068x068 071x071 074x074 077x077 080x080 MH 74151 Cxt01 38S02 74151 data sheet 74151 pin configuration bel 188 transistor 065x0 PDF