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    SM 588 B TRANSISTORS Search Results

    SM 588 B TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SM 588 B TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5010

    Abstract: 2N5011 2N5015 2N5015S transistor U4 U430
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 21 April 2010. MIL-PRF-19500/727B 21 January 2010 SUPERSEDING MIL-PRF-19500/727A 15 April 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,


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    PDF MIL-PRF-19500/727B MIL-PRF-19500/727A 2N5010 2N5015, 2N5010S 2N5015S, 2N5010U4 2N5015U4, MIL-PRF-19500. 2N5011 2N5015 2N5015S transistor U4 U430

    Untitled

    Abstract: No abstract text available
    Text: h "7 > y 7. $ / T ransistors DTB113ZK DTB113ZK g j 3 t r t  h 7 > '> '^ . ÿ i Digital Transistors (Includes Resistors) ^/Transistor Switch • #ä 1 », Dim ensions (Unit : mm) L T 'T > I.I I*— 1 .9 ± 0 .2 A - S B & t f f llJ ä c T 't S ( l if ill ïS


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    PDF DTB113ZK SC-59 100MHz

    st2222A

    Abstract: PN2907A ST2907A
    Text: Transistors I PNP Medium Power Transistor Switching UMT2907A / SST2907A/MMST2907A / RXT2907A / PN2907A # External dim ensions (Units : mm) •Features 1 ) BV ceo< —40V ( lc = —10mA) 2 ) Complements the UM T2222AÆ ST2222A/MMST2222A/ RXT2222A/PN2222A.


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    PDF UMT2907A SST2907A/MMST2907A RXT2907A PN2907A --40V --10mA) T2222AÆ ST2222A/MMST2222A/ RXT2222A/PN2222A. st2222A PN2907A ST2907A

    transistor 3904

    Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn
    Text: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.


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    PDF OT-23 CMPT491E CMPT591E OT-23 OT-223 CMPTA46 CMPTA96 CZTA46 CZTA96 transistor 3904 transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn

    409LT

    Abstract: 409LT1
    Text: SILICON EPICAP DIODES MMBV409LT1* MV409* . . . designed for general frequency control and tuning applications; providing solid-state reliability in replacem ent of m echanical tuning methods. • High Q with G uaranteed M inim u m Values at VHF Frequencies


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    PDF MV409 409LT1 MMBV409LT1* MV409* OT-23 O-236AB) MMBV409LT1 MV409 409LT 409LT1

    RXT2907A

    Abstract: marking R2F MMST2907A PN2907A SST2907A T106 T110 UMT2907A transistor Marking code t03 Part marking SC70 bc
    Text: Transistors PNP Medium Power Transistor Switching i UM T2907A / SST2907A/M M ST2907A / RXT2907A / PN2907A 0 F e a tu re s # E x te rn a l dimensions (Units : mm) 1 ) B V ceo C —4 0 V ( l c = — 10m A ) UMT2907A 2 ) C o m p le m e n ts the U M T 2 2 2 2 A /S S T 2 2 2 2 A /M M S T 2 2 2 2 A /


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    PDF UMT2907A SST2907A/MMST2907A RXT2907A PN2907A UMT2Z2ZA/SST2222A/MMST2222 RXT2222A/PN2222A. SST2907A MMST2907A marking R2F PN2907A T106 T110 transistor Marking code t03 Part marking SC70 bc

    TI 35X35 BGA 368 BGA

    Abstract: 547 B34 kl 668 sem 304
    Text: •SSSS D a t a S h e e t _ O K I A S I C P R O D U MG73Q000/74Q000 and MSM98Q000/99Q000 0.35iim Customer Structured Arrays April 1999 Oki Semiconductor CONTENTS D


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    PDF MG73Q000/74Q000 MSM98Q000/99Q000 35iim G73Q/74Q 98Q/99Q 98Q/99Q108X108 35x35 27x27 TI 35X35 BGA 368 BGA 547 B34 kl 668 sem 304

    TA143E

    Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
    Text: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0


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    PDF 2SK1973F5 2SK2041 2SK2042 2SK2094F5 2SK2103 RU101 RU201 RU901 TA143E 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE

    2SD1966

    Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
    Text: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5


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    PDF 2SA785 2SA790 2SA790M 2SA806 2SA821 2SA825 2SA825S 2SA83Û 2SA830S 2SA854 2SD1966 2SD1255M 2SB maintenance IMB6 2SC2808

    BGA Package 14x14

    Abstract: IC LM 324 ic LM 356 oki cross oki pitch MG73Q MG74Q MSM98Q MSM99Q
    Text: : D ata S h e e t K MG73Q000/74Q000 and MSM98Q000/99Q000 0.35|im Customer Structured Arrays April 1999 Oki Semiconductor This Material Copyrighted By Its Respective Manufacturer CONTENTS D escrip tio n .1


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    PDF MG73Q000/74Q000 MSM98Q000/99Q000 MG73Q/74Q MSM98Q/99Q Q076X076 98Q/99Q080X080 98Q/99Q084X084 98Q/99Q088X088 98Q/99Q092X092 98Q/99Q096X096 BGA Package 14x14 IC LM 324 ic LM 356 oki cross oki pitch MG73Q MG74Q MSM98Q MSM99Q

    marking bt5

    Abstract: MMST2907A PN2907A RXT2907A SST2907A T106 T116 UMT2907A
    Text: Transistors PNP Medium Power Transistor Switching I UM T2907A / SST2907A/M M ST2907A / RXT2907A / PN2907A •F e a tu r e s 1 ) BV ceo< —40V ( lc = —10mA) 2 ) Complem ents the UM T2222A/SST2222A/M M ST2222A/ RXT2222A/PN2222A. •E x te r n a l dim ensions (Units : mm)


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    PDF UMT2907A SST2907A/MMST2907A RXT2907A PN2907A UMT2222A/SST2222A/MMST2222A/ RXT2222A/PN2222A. SST2907A MMST2907A marking bt5 PN2907A T106 T116

    MSM91

    Abstract: No abstract text available
    Text: O K I Semiconductor M S M 9 1 S 000 _ 0.8|.im Customer Structured Array for High-Performance, 3 and 5 Volt Applications DESCRIPTION O K I's M SM 91S000 Custom er Structured Array family is a high performance, high-density sem icus­ tom product using O K I's 0.8|j.m drawn 0.6|am effective , two layer metal, polysilicide, dual well pro­


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    PDF 91S000 RS6000 PC386 MSM91S000 MSM91S000 MSM91

    TI 9023 IC data

    Abstract: 2SC4226 APPLICATION NOTES
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA81 OT HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The /xPA81 OT has built-in 2 low-voltage transistors which are designed to PACKAGE DRAW INGS


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    PDF uPA810T 2SC4226) /xPA81 TI 9023 IC data 2SC4226 APPLICATION NOTES

    613 GB 123 CT

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S


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    PDF uPA812T 2SC4227) /xPA812T 613 GB 123 CT

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    transistor 8331

    Abstract: AD583BD AD588BD AD588TQ rtd with wheatstone bridge K4515 AD588 AD588AQ AD588JQ AD588SE
    Text: ANALOG ► DEVICES High Precision Voltage Reference FUNCTIONAL BLOCK DIAGRAM FEATURES Low Drift: 1.5 ppm/°C Low Initial Error: 1 mV Pin-Program m able Output +10 V, +5 V, ± 5 V Tracking, - 5 V, -1 0 V Flexible Output Force and Sense Terminals High Impedance Ground Sense


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    PDF MIL-STD-883 AD588 transistor 8331 AD583BD AD588BD AD588TQ rtd with wheatstone bridge K4515 AD588AQ AD588JQ AD588SE

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM38S0000/MSM98S000 0.8|im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays DESCRIPTION OKI's 0.8 tm ASIC products, specially designed for mixed 3-V /5-V applications, are now available in both Sea Of Gates (SOG and Customer Structured Array (CSA) architectures. Both the SOG-based MSM38S


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    PDF MSM38S0000/MSM98S000 MSM38S MSM98S 16-Mbit 38S/98S 44x44 35x35 28x28 33x33 38x38

    ps 4512 diode

    Abstract: SS44A P61089 PS-4512 diode
    Text: T1SP61089 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS NOVEMBER 1995 - R EVEED JAN U A W 199« PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION • • Dual Voltage-Programmable Protectors - Wide 0 to -80 V Programming Range - Low 5 mA max. Gate Triggering Current


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    PDF T1SP61089 TISP61089 TISP61089. ps 4512 diode SS44A P61089 PS-4512 diode

    101ra100

    Abstract: 22RC10 71RA120 36RA80 101RC60 PR002W 40RCS60 151ra100 250pa120 250RA80
    Text: EUROPEAN CATALOGUE CATALOGO EUROPEO EUROPAISCHER KATALOG CATALOGUE EUROPEEN In tro d u c tio n The products specified in this shortform catalogue have been selected from the comprehensive range manufactured by the International Rectifier group of Companies.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES High Precision Voltage Reference AD588* FUNCTIONAL BLOCK DIAGRAM FEATURES Low Drift: 1.5 ppm/°C Low Initial Error: 1 mV Pin-Programmable Output +10 V, +5 V, ± 5 V Tracking, - 5 V, -1 0 V Flexible Output Force and Sense Terminals High Impedance Ground Sense


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    PDF MIL-STD-883 AD588

    HFBR-1502

    Abstract: HFBR-2501 3154-RTV photo interrupter "snap-in" marking 78 connector HFBR-0500 HFBR-3510 HP photo interrupter module HFBR-2502 hfbr-2527 HFBR2501
    Text: SNAP-IN FIBER OPTIC LINKS TRANSMITTERS, RECEIVERS, CABLE AND CONNECTORS HFBR-0500 SERIES Features • GUARANTEED LINK PERFORMANCE OVER TEMPERATURE High Speed Links: dc to 5 MBd Extended Distance Links up to 111 m Low Current Links: 6 mA Peak Supply Current for


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    PDF HFBR-160X/2602 HFBR-2602 HFBR-1502 HFBR-2501 3154-RTV photo interrupter "snap-in" marking 78 connector HFBR-0500 HFBR-3510 HP photo interrupter module HFBR-2502 hfbr-2527 HFBR2501

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    KE4416

    Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
    Text: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents


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    PDF DH3467C 2N3467 14-pin O-106 O-220 KE4416 ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375

    MH 74151

    Abstract: Cxt01 38S02 74151 data sheet 74151 pin configuration bel 188 transistor MSM98S 065x0
    Text: O K I Semiconductor MSM38S0000/MSM98S000 0.8|im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays D E S C R IP TIO N OKI's 0.8 im ASIC products, specially designed for mixed 3-V /5-V applications, are now available in both Sea Of Gates (SOG and Customer Structured Array (CSA) architectures. Both the SOG-based MSM38S


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    PDF MSM38S0000/MSM98S000 MSM38S MSM98S 16-Mbit MSM38S/98S 068x068 071x071 074x074 077x077 080x080 MH 74151 Cxt01 38S02 74151 data sheet 74151 pin configuration bel 188 transistor 065x0