SKM 75 Gb 124 IGBT
Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040
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SKM 40 GD 121 D
Abstract: SKM 40 GD 101 D skm 40 gd 121 skm 200 gb 122 d skm 75 gb 101 d skm 150 gb 122 SKM 25 GD IGBT cross reference semikron skm 40 gd 121 SKM 300 GA 102 D Semitrans M SKm 100 ga 121 d
Text: 6 0,75$16 ,*%7 0RGXOHV ,QVXODWHG *DWH %LSRODU 7UDQVLVWRU 0RGXOHV HDWXUHV 7\SLFDO $SSOLFDWLRQV 026 LQSXW YROWDJH FRQWUROOHG )UHTXHQF\ FRQYHUWHUV IRU $& PRWRU GULYHV 1 FKDQQHO '& VHUYR DQG URERW GULYHV /RZ VDWXUDWLRQ YROWDJH VHULHV DYDLODEOH
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1371RQ
SKM 40 GD 121 D
SKM 40 GD 101 D
skm 40 gd 121
skm 200 gb 122 d
skm 75 gb 101 d
skm 150 gb 122
SKM 25 GD
IGBT cross reference semikron skm 40 gd 121
SKM 300 GA 102 D
Semitrans M SKm 100 ga 121 d
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SKM 40 GD 101 D
Abstract: SKM 22 GD 101 D SKM 40 gdl 123 d b6104 skm 50 gd 123 d
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 75 / 50 150 / 100 ± 20 390 – 40 . . .+150 (125) 2 500 Class F 40/125/56 V V A A V W °C
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skm 200 gb 122 d
Abstract: semikron skkt 132/ 14/ E Semitrans M SKD 100 GAL 124d Semikron SKR 26 /12 semikron skkh 161 semikron skkt 162/ 12/ D semipack skkt 161 sknh 210 semikron skt 240 SKKL131
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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453gb12e4s
Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1
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AN-9001
453gb12e4s
SEMIX 71GD12E4S
300gb12e4
igbt cross-reference
SKM200GB128D
SEMiX 202GB12E4s
SEMiX453GB12E4
101GD12E4s
IGBT cross reference semikron
303GD12E4-c
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400V igbt dc to dc buck converter
Abstract: semikron gd-11 semikube semikron IGBT skm 200 gb 128d dc to ac PURE SINE WAVE inverter assembly code SKM300GB128D B6CI Semikube SKM400GB128D working principle of an inverter semikron gd-11 interface
Text: Application Note AN-8003 Key Words: cooling, capacitor, driver, IGBT, Input bridge rectifier, selection, SEMISTACK Revision: 00 Issue Date: 2008-05-27 Prepared by: Frederic Sargos SEMIKUBE selection guide 1. 1.1. 1.2. 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7.
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AN-8003
400V igbt dc to dc buck converter
semikron gd-11 semikube
semikron IGBT skm 200 gb 128d
dc to ac PURE SINE WAVE inverter assembly code
SKM300GB128D
B6CI
Semikube
SKM400GB128D
working principle of an inverter
semikron gd-11 interface
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SKHI 20
Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
Text: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200
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Untitled
Abstract: No abstract text available
Text: S1E SEMIKRON Conditions ' VcES V cgr lc SEMIKRON Values . 101 D i . 121 D 1000 1000 R ge = 20 k£2 Tease = 2 5 /8 0 °C Tease = 2 5 /8 0 °C ICM V g es Ptot Tj, Tstg I I 1200 1200 ±20 AC, 1 min humidity climate D IN 4 0 04 0 D IN I EC 6 8 T.1 Units V V
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skm 75 gb 101 d
Abstract: skm 100 gb 121d skm 75 gb 101d SK 50 GAL 065 75GB101D SK 200 GAR 125 skm 75 101 SEMIKRON SKM 22 GAL 121D
Text: s e MIKRDN Absolute Maximum Ratings Symbol Conditions 1 VcES VcGR lc ICM V ges Rge = 20 kQ Tease — 25/80 °C Tease = 25/80 °C Ptot Tj, Tstg V ¡so! humidity climate Values . 101 D 1000 1000 . 121 D Units 1200 1200 V V A A V I 75/50 150/100 ±20 500
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SKM75
skm 75 gb 101 d
skm 100 gb 121d
skm 75 gb 101d
SK 50 GAL 065
75GB101D
SK 200 GAR 125
skm 75 101
SEMIKRON SKM 22 GAL 121D
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skm 191 mosfet
Abstract: skm 151 mosfet SKM 181 R skm 141 ar zener DIODE D49 skm 181 mosfet SKM 200 CIRCUIT SKM 121 R semikron skm 191 skm 191
Text: Section 5: SEMITRANS M Power MOSFET Modules V ds Type ’ ’ ▲New type SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM V 101 AR 101 RZR 111 AR 111 RZR 450A010 121 A R 121 RZR 180A020 450A020
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450s1
D15/D45
450A010
180A020
450A020
120B020
240B020
310B020
240M020
310M020
skm 191 mosfet
skm 151 mosfet
SKM 181 R
skm 141 ar
zener DIODE D49
skm 181 mosfet
SKM 200 CIRCUIT
SKM 121 R
semikron skm 191
skm 191
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skm 100 gb 101 d
Abstract: skm 100 gb 121d Si 122D GAL 16 v 8 D DIP skm 100 gb 122 d skm 50 gb 101 d D4252-1 skm 200 gb 122 d skm 75 gb 101 d SEMIKRON SKM 22 GAL 121D
Text: m SIE I Ö13bb?l D[]G3L,7fl TbS » S E K G semikrdn SENIKRON INC Absolute Maximum Ratings Sym bol Values . 101 D I . 121 D . 102.D I . 122 D Conditions 1 1000 VCES Units 1200. 1000 , V 1200 V VCGR R g e = 2 0 kQ Ic Tease = 2 5 /8 0 °C 1 0 0 /7 5 ICM
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13bh71
Woff12
WoH2351
skm 100 gb 101 d
skm 100 gb 121d
Si 122D
GAL 16 v 8 D DIP
skm 100 gb 122 d
skm 50 gb 101 d
D4252-1
skm 200 gb 122 d
skm 75 gb 101 d
SEMIKRON SKM 22 GAL 121D
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SEMIKRON SKM 50 GAL 121D
Abstract: skm 50 z skm 75 gb 101 d SK 200 GAR 125 50GB101D skm 22 gal 121 SEMIKRON SKM 22 GAL 121D SEMIKRON SKM 100 GAL 101D
Text: s e M IKRD n Absolute Maximum Ratings Sym bol Values . 101 D Conditions ' 1000 1000 VcES VcGR R g e = 20 k£2 Ic T c a s e = 25/80 °C T c a s e = 25/80 CC ICM per IGBT, T ca se 1200 1200 50/34 100/68 ±20 400 - 5 5 . .+150 2 500 Class F 55/150/56 V ges
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Untitled
Abstract: No abstract text available
Text: SIE ]> • s é í TF k r o í T SEMIKRON in c Absolute Maximum Ratings Symbol ñl3bb71 DG03bb5 bTS M S E K G Conditions 1 Values . 101 D 121 D 1000 1000 1200 ■ 1200 50/34 100/68 + 20 400 - 5 5 . . .+150 2 500 VcES VcGR R g e = 20 k Q lc Tcase = 25/80 C
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l3bb71
DG03bb5
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D73 -Y
Abstract: skm 75 gb 101 d skm 100 gb 101 d skm 50 gb 100 d semikron skm 300 gar 123 SKM 22 GD 101 D SKM 40 GD 101 D skm 40 gb 123 d SKM 300 CIRCUIT cemi data
Text: 5EMIKRDN Section 6: SEMITRANS IGBT Modules; New Range 1996 3rd Version: Low Inductance, lower Vc e m . soft and fast CAL diodes11 41 Type 2 VcES 2) lc = 25 °C 0 Teas« = V 1200 SKM 300 GA 123 D 1200 SKM 300 GA 173 D 1700 SKM 400 G A 123 D 5) 1200 SKM 400 G A 173 D 5> 1700
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SKM 22 GD 101 D
Abstract: SKM 40 GD 101 D SKM 15 GD 100 D SKM 40 GD 121 D FS403 skm 40 gd 121
Text: se MIKRO n Absolute Maximum Ratings Symbol Conditions 1 Values . 101 D I . 121 D 1000 1000 V cES = 20 kQ 1 case = 25/80 °C Tease = 25/80 °C R ge VcGR lc ICM per IGBT, Tease = 25 °C jH — C /5I CQ Visol humidity climate 1200 1200 22/15 44/30 ±20 150
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Untitled
Abstract: No abstract text available
Text: SIE D • Ö13bb71 DD03b3ö 3flb « S E K G SEMIKRON S E M I K R O N INC Absolute Maximum Ratings Symbol Conditions1 VcES VcGR lc Rge = 20 k f l Values .121 D . 101 D 1000 1000 V ges Ptot T], Tstg Visoi per IGBT, Tease = 25 °C AC, 1 min humidity DIN 40 040
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13bb71
DD03b3Ã
fll3bb71
QGD3b45
T-39-31
SKM22GD101
SKM22GD121
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semikron SKm GAL 123D
Abstract: CASED61
Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions VcES VcGR lc Rge IC M Values Units ' 20 k £ 2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc IfM= - IcM Tcase = tp = 10 Ifsm
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n Absolute Maximum Ratings Symbol Conditions * Values Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 7 5 /5 0 1 5 0 /1 0 0 ±20 390 - 4 0 . . .+150 125 2 500 Class F 40/125/56 Inverse Diode Tcase = 25/80 °C If= - lc Tcase = 25/80 °C; tp = 1 ms
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SEMIKRON SKM 22 GAL 121D
Abstract: SEMIKRON SKM 50 GAL 121D skm 100 gb 121d GE215 40GB101D SK 70 KQ 16 SEMIKRON SKM4 skm 75 101 SEMIKROM SEMIKRON+SKM+22+GAL+121D
Text: s e MIKRD n Absolute Maximum Ratings Symbol C onditions 1 Values VcES R ge = 2 0 kQ T case = 2 5 /8 0 °C T case = 2 5 /8 0 °C VcGR lc ICM 1000 1200 V 1200 V per IG B T , T case = 2 5 °C 8 0 /5 0 A ± 20 V A C , 1 min D IN 4 0 0 4 0 W 300 -5 5 . humidity
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SKM40
SKM40GAR
SEMIKRON SKM 22 GAL 121D
SEMIKRON SKM 50 GAL 121D
skm 100 gb 121d
GE215
40GB101D
SK 70 KQ 16 SEMIKRON
SKM4
skm 75 101
SEMIKROM
SEMIKRON+SKM+22+GAL+121D
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Untitled
Abstract: No abstract text available
Text: s e MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C Pfot Tj, Tstg Vsol AC , 1 min. h u m id ity clim a te DIN 40 040 DIN IEC 68 T.1
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CASED68
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F42A
Abstract: No abstract text available
Text: S EM IK R O N V r sm Ifrm s m a xim u m v a lu e fo r continuous operation V r rm 120 A Ifa v (sin. 1 80 ; T case = 8 5 °C ; 5 0 Hz) V 42 A 1000 S K K D 42 F 10 S K M D 4 2 F 10 SK N D 4 2 F 10 1200 S K K D 42 F 12 S K M D 4 2 F 12 SK N D 4 2 F 12 1400
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SKM 40 GD 101 D
Abstract: SKM 22 GD 101 D 123 DL
Text: s e MIKRO n Absolute Maximum Ratings V a lu e s Symbol Conditions VcES VcGR lc ICM Vqes Rge = 20 kQ Teas ~ 25/80 °C Tease = 25/80 "C; tp — 1 ms P lo t per IGBT, T « , T„ Tag V«„ humidity climate AC, 1 min. DIN 40 040 DIN 1EC68T.1 1200 1200 2 5 /1 5
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1EC68T
SKM22GD123
SKM 40 GD 101 D
SKM 22 GD 101 D
123 DL
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VQE 23D
Abstract: 6tv0 skm 40 gb 123 d
Text: se MIKROn Absolute Maximum Ratings Sym bol C onditions ' V ce S Vcon lc Icm V qes R ge - 20 kQ Tease = 25/80 C Tease = 25/80 “C; tp — 1 ms Plot Tj, Tstg Visot humidity climate per IG BT , Tease = 25 °C AC, 1 min. DIN 4 0 0 4 0 DIN I E C 6 6 T . 1 Inverse Diode
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