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Abstract: No abstract text available
Text: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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Abstract: No abstract text available
Text: SKM 200 GB 126 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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arketin\FRAMEDAT\datbl\B06-igbt\200gb126d
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Untitled
Abstract: No abstract text available
Text: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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M200G128
Abstract: No abstract text available
Text: SKM 200 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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M200G128
XLS-13
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cv190
Abstract: GAL 200 gb
Text: SKM 200 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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Untitled
Abstract: No abstract text available
Text: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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Untitled
Abstract: No abstract text available
Text: SKM 200 GB 174 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC; ICN ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. 4) IEC 60721-3-3
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3K7/IE32
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SKM 151F
Abstract: ac drives LS 600 M151A SKM151F drives ls 600 LS9100 resonant inverter for welding SKM 300 CIRCUIT LS-1800 M151A4R
Text: SKM 151 A4R Absolute Maximum Ratings Values Symbol Conditions 1 VDS VDGR ID IDM VGS PD Tj, Tstg) Visol humidity climate Units 500 500 70 / 50 280 / 200 ± 20 780 –40 . +150 (125) 2 500 RGE = 20 kΩ Tc = 25 / 80 °C Tc = 25 / 80 °C AC, 1 min. IEC 60721-3-3
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M151A
LS-52
SKM 151F
ac drives LS 600
SKM151F
drives ls 600
LS9100
resonant inverter for welding
SKM 300 CIRCUIT
LS-1800
M151A4R
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Untitled
Abstract: No abstract text available
Text: SKM 200 GB 126 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
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T\datbl\B06-ig
bt\200
gb126d
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GB125D
Abstract: Dt10 gb125
Text: SKM 200 GB 125 D . Values Absolute Maximum Ratings Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1
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3K7/IE32
GB125D
Dt10
gb125
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semikron IGBT 150A 600v
Abstract: No abstract text available
Text: SKM 200 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
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T\datbl\B06-ig
bt\200
gb128d
semikron IGBT 150A 600v
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cv190
Abstract: No abstract text available
Text: SKM 200 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
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T\datbl\B06-ig
bt\200
gb128d
20kHz
cv190
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Untitled
Abstract: No abstract text available
Text: SKM 200 GARL 066 T Absolute Maximum Ratings Symbol Conditions IGBT 789, .Q 2 GH I8 @8 .Q 2 FXH I8 .03+ 2 GHI8K * 5(+ %41(/<-+( +=(0-?-(A WNN 7 GYN Z .0 2 YN I8 GFN Z MNN Z ¥ GN 7 .Q 2 FHN I8 W a+ .0 2 GH I8 GX Z .0 2 YN I8 GN Z MN Z .Q 2 FHN I8 bH Z .0 2 GH I8
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Abstract: No abstract text available
Text: SKM 200 GARL 066 T Absolute Maximum Ratings Symbol Conditions IGBT 2 * ! 2 '9) * ()*, " 8// (:/ ; :/ * ('/ ; .// ; = (/ 2 ')/ * 8 B () * (9 ; :/ * (/ ; ./ ; 2 ')/ * C) ; () *
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Abstract: No abstract text available
Text: SKM 200 GARL 066 T Absolute Maximum Ratings Symbol Conditions IGBT 2 * ! 2 '5) * ()*, " 4// (6/ 7 6/ * ('/ 7 .// 7 : (/ 2 ')/ * 4 ? () * (5 7 6/ * (/ 7 ./ 7 2 ')/ * A) 7 () *
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Text: SKM 200 GARL 066 T Absolute Maximum Ratings Symbol Conditions IGBT 2 * ! 2 '5) * ()*, " 4// (6/ 7 6/ * ('/ 7 .// 7 : (/ 2 ')/ * 4 ? () * (5 7 6/ * (/ 7 ./ 7 2 ')/ * A) 7 () *
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Abstract: No abstract text available
Text: SKM 200 MLI 066 T Absolute Maximum Ratings Symbol Conditions IGBT 3 * + ! 3 6* + )*+- " 500 )70 8 70 + )(0 8 /00 8 < )0 3 (*0 + 5 @ )* + )60 8 70 + )00 8 /00 8 3 (*0 + (&(0 8 )* +
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SKM 200 APPLICATION
Abstract: No abstract text available
Text: SKM 200 MLI 066 T Absolute Maximum Ratings Symbol Conditions IGBT 3 * + ! 3 6* + )*+- " 500 )70 8 70 + )(0 8 /00 8 < )0 3 (*0 + 5 @ )* + )60 8 70 + )00 8 /00 8 3 (*0 + (&(0 8 )* +
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453gb12e4s
Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1
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AN-9001
453gb12e4s
SEMIX 71GD12E4S
300gb12e4
igbt cross-reference
SKM200GB128D
SEMiX 202GB12E4s
SEMiX453GB12E4
101GD12E4s
IGBT cross reference semikron
303GD12E4-c
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400V igbt dc to dc buck converter
Abstract: semikron gd-11 semikube semikron IGBT skm 200 gb 128d dc to ac PURE SINE WAVE inverter assembly code SKM300GB128D B6CI Semikube SKM400GB128D working principle of an inverter semikron gd-11 interface
Text: Application Note AN-8003 Key Words: cooling, capacitor, driver, IGBT, Input bridge rectifier, selection, SEMISTACK Revision: 00 Issue Date: 2008-05-27 Prepared by: Frederic Sargos SEMIKUBE selection guide 1. 1.1. 1.2. 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7.
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AN-8003
400V igbt dc to dc buck converter
semikron gd-11 semikube
semikron IGBT skm 200 gb 128d
dc to ac PURE SINE WAVE inverter assembly code
SKM300GB128D
B6CI
Semikube
SKM400GB128D
working principle of an inverter
semikron gd-11 interface
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skm 200 GB 12 V
Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC
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skm 195 gb 125 dn
Abstract: IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107
Text: 1997-2012:QuarkCatalogTempNew 9/11/12 8:57 AM Page 1997 25 SEMITRANS and SEMiX High Performance IGBT Modules RoHS SEMiX 603 INTERCONNECT SEMITRANS 3 TEST & MEASUREMENT SEMITRANS™ and SEMiX® 600 V, 1200 V, 1700 V High Performance IGBT Modules SKM 400GAL125D
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400GAL125D
101GD066HDS
151GD066HDS
201GD066HDS
202GB066HDs
302GB066HDs
402GB066HDs
SEMIX171KH16S
SEMIX191KD16S
SEMIX241DH16S
skm 195 gb 125 dn
IGBT ultra fast
SKM200GB12E4
303GB12E4s
SKM300GB123D
igbt sixpack
skm 50 gb 100 d
151GB12E4s
skm200gb123d
bridge rectifier 107
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Untitled
Abstract: No abstract text available
Text: s e m ik r o n Absolute Maximum Ratings Sym bol V ds V dgr Id Idm V gs Pd C onditions ' R qs = 20 k fi humidity climate Units 100 V V lo o AC, 1 min DIN 40 040 DIN IEC 68 T.1 SEMITRANS M Power M OSFET Modules SKM 111 AR A A 200 600 ±20 700 55 . . .+150
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skm 200 gb 122 d
Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
Text: SEMIKRON Conditions ' VcES VcGR lc ICM V ges Tease Ptot per Values . 101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 200/150 400/300 ±20 1250 - 5 5 . .+150 2 500 Class F 55/150/56 Rge = 20 k fl = 25/80 °C Tease = 25/80 °C T j, Tstg Visol AC, humidity
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l3bb71
G0D37G2
10-E1
skm 200 gb 122 d
SKM 200 GB 102 D
SKM 200 GB 12V
Si 122D
SKM 150 GB 12V
SKM 200 GB 102D
skm 150 gal 122d
SEMIKRON SKM 50 GAL 121D
SEMIKRON SKM 22 GAL 121D
semikron skm 150 gb 122
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