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    SKB10N60A Price and Stock

    Infineon Technologies AG SKB10N60AATMA1

    IGBT 600V 20A 92W TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SKB10N60AATMA1 Reel 1,000
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    • 1000 $1.26355
    • 10000 $1.15525
    		Buy Now

    SKB10N60A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SKB10N60A Infineon Technologies Fast IBGT in NPT Technology with soft, fast recovery anti-parallel EmCon Diode Original PDF
    SKB10N60A Infineon Technologies Fast IGBT in NPT-Technology with Soft, Fast Recovery Anti-Parallel EmCon Diode Original PDF
    SKB10N60A Infineon Technologies IGBT with Anti-Parallel Diode; Package: PG-TO263-3; Switching Frequency: Fast IGBT 10-40 kHz; Package: TO-220; VCE (max): 600.0 V; IC(max) @ 25°: 21.0 A; IC(max) @ 100°: 10.9 A Original PDF
    SKB10N60AATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 20A 92W TO263-3 Original PDF

    SKB10N60A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k10n60

    Abstract: SKB10N60A
    Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKB10N60A SKB10N60A k10n60

    K10N60

    Abstract: SKB10N60A ND marking
    Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKB10N60A P-TO-220-3-45 K10N60 SKB10N60A ND marking

    SKP10N60A

    Abstract: No abstract text available
    Text: SKP10N60A Preliminary SKB10N60A, SKW10N60A Fast-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


    Original     		PDF SKP10N60A SKB10N60A, SKW10N60A SKP10N60A SKB10N60A SKW10N60A O-220AB O-263AB O-247AC Q67040-S4458

    SKP10N60A

    Abstract: SKB10N60A SKW10N60A Q67040-S4459 Q67040-S4458 fast recovery diode 1000v 10A 100w 5a IGBT
    Text: SKP10N60A, SKB10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


    Original     		PDF SKP10N60A, SKB10N60A SKW10N60A P-TO-220-3-1 O-220AB) P-TO-263-3-2 P-TO-247-3-1 O-263AB) O-247AC) O-220AB SKP10N60A SKB10N60A SKW10N60A Q67040-S4459 Q67040-S4458 fast recovery diode 1000v 10A 100w 5a IGBT

    k10n60

    Abstract: No abstract text available
    Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKB10N60A SKB10N60A k10n60

    SKP10N60A

    Abstract: 100w 5a IGBT Q67040-S4458 Q67040-S4459 SKP10N60 SKB10N60A SKW10N60A
    Text: SKP10N60A, SKB10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


    Original     		PDF SKP10N60A, SKB10N60A SKW10N60A P-TO-220-3-1 O-220AB) P-TO-263-3-2 P-TO-247-3-1 O-263AB) O-247AC) O-220AB SKP10N60A 100w 5a IGBT Q67040-S4458 Q67040-S4459 SKP10N60 SKB10N60A SKW10N60A

    k10n60

    Abstract: PG-TO-263-3-2 SKB10N60A diode smd marking 5P
    Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,


    Original     		PDF SKB10N60A k10n60 PG-TO-263-3-2 SKB10N60A diode smd marking 5P

    Untitled

    Abstract: No abstract text available
    Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,


    Original     		PDF SKB10N60A

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J