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Abstract: No abstract text available
Text: SK50DM060D Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)600 V(BR)CBO (V)600 I(C) Max. (A)50 Absolute Max. Power Diss. (W)310 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.75 @I(C) (A) (Test Condition)50
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SK50DM060D
NumberTR00700007
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SK50DB060
Abstract: SK 50 DB 060D semikron SK 50 DB 100 D
Text: fll3bb?l D D D B T T E 213 « S E K G S1E D -SEMIKRON S E M I K R O N INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, V be = - 2 V Values > CM I II LU CQ > 600 V 600 V V 600 V ebo o m II II o o VcEV Units 7 V lc D. C. 50 A IcM tp = 1 ms
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fll3bb71
T-33-35
SK50DB060D
SK50DM
SK50DB060
SK 50 DB 060D
semikron SK 50 DB 100 D
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SK 50 DB 060D
Abstract: SK50DM DB060D SK50DM060D SK50D
Text: s e MIKRDN Maximum Ratings Symbol VcEVsus VcEV VcBO Conditions Values Units V |c = 1 A, Vbe = - 2 V 600 Vbe = - 2 V 600 V Ie = 0 600 V Vebo lc = 0 7 V lc D. C. 50 A tp = 1 ms 100 A D. C. 50 A ICM If = -lc 3 A 310 W Tvj - 40 . . . + 150 °C Tstg - 4 0 . . . + 125
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SK50DM
CaseD12
B7-70
SK 50 DB 060D
DB060D
SK50DM060D
SK50D
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