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    2PG006

    Abstract: SJN00006AED
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High-speed switching: tf = 175 ns (typ.)


    Original     		PDF 2002/95/EC) 2PG006 O-220D-A1 2PG006 SJN00006AED

    2PG006

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2PG006 O-220D-A1 2PG006

    2PG006

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High-speed switching: tf = 175 ns (typ.)


    Original     		PDF 2002/95/EC) 2PG006 O-220D-A1 2PG006