a8 jz
Abstract: sg8a jsp6
Text: 01234256789 1 88 8 8! " ! GHG1;' *1)5?-'5'@1?)99,?5)&'()* HGH1;'()*1)5?-'5'@1?)99,?5)8)9:;)1)<5.=,>?.(1)>,@ /012103456 77 AB )<5C.1=7, ,>D* ?.E7.1)>F7. 77 +,-. #$"8# "%%" OPQRSJTUJVLVWVXYZ[V\ZU]J^PLW_ |bU `a`ZPXRJKZ
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dkl-2
Abstract: dkli 586B A2J2 866b
Text: !"#$#% &' (*+*,)-#, .*$/(- 012 3#4' ,(/)56*-7(-89$,* !"#$#% &'()(*+*,)-#, .*$/(- .9:*/ ;$/)9+9)#($ .69,* 9$< =#-#$4 077(-) 9$< >*)*,)/ "#$?)* .*$/#$4 @AB*,)/ !"#$%&'#$() *+,- ./ (' 0%- 1#,23 -,4+5 #( &'55#*6+ (' 1+(+7( -#$8(+ 5+$5#$9 '*:+7(52 ;,<+5 =#>#$9 +?'>(@ +<+$ =#(A 7'-&,7( *'1B2
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g6192
dkl-2
dkli
586B
A2J2
866b
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MSE1PJ
Abstract: 0.01 aec mse1pg MSE1PD
Text: New Product MSE1PB thru MSE1PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 0.65 mm eSMP TM Series • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current
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J-STD-020,
2002/95/EC
2002/96/EC
J-STD-002
JESD22-B102
08-Apr-05
MSE1PJ
0.01 aec
mse1pg
MSE1PD
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Untitled
Abstract: No abstract text available
Text: New Product MSE1PB thru MSE1PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 0.65 mm • Ideal for automated placement eSMP TM Series • Oxide planar chip junction • Low forward voltage drop, low leakage
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J-STD-020,
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: New Product MSE1PB thru MSE1PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifier FEATURES eSMP TM • • • • • • Very low profile - typical height of 0.65 mm Ideal for automated placement Oxide planar chip junction Low forward voltage drop, low leakage current
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J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
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sj 89a
Abstract: MSE1PJ
Text: New Product MSE1PB thru MSE1PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 0.68 mm • Ideal for automated placement eSMP TM Series • Oxide planar chip junction • Low forward voltage drop, low leakage
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J-STD-020,
2002/95/EC
2002/96/EC
18-Jul-08
sj 89a
MSE1PJ
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MSE1PJ
Abstract: VISHAY MARKING SJ MSE1PD MSE1P diode sg 89a MARKING H3B VISHAY MARKING SG vishay sj 96 JESD22-A114 JESD22-A115
Text: New Product MSE1PB thru MSE1PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 0.65 mm • Ideal for automated placement eSMP TM Series • Oxide planar chip junction • Low forward voltage drop, low leakage
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J-STD-020,
22-A111
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
MSE1PJ
VISHAY MARKING SJ
MSE1PD
MSE1P
diode sg 89a
MARKING H3B
VISHAY MARKING SG
vishay sj 96
JESD22-A114
JESD22-A115
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JESD22-A114
Abstract: JESD22-A115 J-STD-002
Text: New Product MSE1PB thru MSE1PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifier FEATURES • • • • eSMP Series • • Top View Bottom View • • MicroSMP • Very low profile - typical height of 0.65 mm Ideal for automated placement
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J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
JESD22-A114
JESD22-A115
J-STD-002
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MSE1PJHM
Abstract: AEC-Q101-001 MSE1P
Text: MSE1PB thru MSE1PJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifier FEATURES • • • • eSMP Series • • Top View Bottom View • • MicroSMP Very low profile - typical height of 0.65 mm Ideal for automated placement
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J-STD-020,
AEC-Q101
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
MSE1PJHM
AEC-Q101-001
MSE1P
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diode sg 89a
Abstract: No abstract text available
Text: MSE1PB, MSE1PD, MSE1PG, MSE1PJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifier FEATURES • • • • eSMP Series • • Top View Bottom View • • MicroSMP Very low profile - typical height of 0.65 mm Available Ideal for automated placement
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J-STD-020,
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
diode sg 89a
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MicroSMP Pad Layout
Abstract: VISHAY MARKING SJ
Text: New Product MSE1PB thru MSE1PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifier FEATURES • • • • eSMP Series • • Top View Bottom View • • MicroSMP • Very low profile - typical height of 0.65 mm Ideal for automated placement
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J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
MicroSMP Pad Layout
VISHAY MARKING SJ
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234567489AB6CDEF8
Abstract: No abstract text available
Text: 234567489AB6CDEF87D6 D#2 $ 1 B !B" 123456789ABCDEAF 3A488FD3BDED ABDED BB BDEB1B B DEA3B 224A !AFA3D4B8F723DE82F ED "#B723B$D3826#B8F$A3EA3BD48 DE82F%B A8 2F6 E23# B&ADEB#8F"# B DD 8E23# B38$A3#BDF #AF#23#B8F 46A%B'&A#ABD3AB2F4BEA &F8 D4BDED
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234567489AB6CDEF8
123456789ABCDEAF
AFA3D4B8F723
DE82F
B723B
D3826
DE82F
D3A7644
AFEDE82FBDF
89FBAF
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Untitled
Abstract: No abstract text available
Text: 234567489AB6CDEF87D6 D#2 $ 1 B !B" 123456789ABCDEAF 3A488FD3BDED ABDED BB BDEB1B B DEA3B 224A !AFA3D4B8F723DE82F ED "#B723B$D3826#B8F$A3EA3BD48 DE82F%B A8 2F6 E23# B&ADEB#8F"# B DD 8E23# B38$A3#BDF #AF#23#B8F 46A%B'&A#ABD3AB2F4BEA &F8 D4BDED
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234567489AB6CDEF8
123456789ABCDEAF
AFA3D4B8F723
DE82F
B723B
D3826
DE82F
D3A7644
AFEDE82FBDF
89FBAF
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Untitled
Abstract: No abstract text available
Text: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A 2 C!"3 A 2 EC!"38 1 11 F8#$%&'9 & &
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23456784539A6BCDEF
345674F
976BCDEF
92D3645
592D3645
C26A2
32DC6A2
961DF86
-ABC66
E82FB
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GY89
Abstract: ED89 ch9i 89mno W 6N 669Z TU89 XHCD GFIJ
Text: !"# #
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89cdeP
89mno
L9999999999999999999999999999999
GY89
ED89
ch9i
89mno
W 6N
669Z
TU89
XHCD
GFIJ
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Am29BDD160GB64C
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29BDD160G
16-bit/512
32-Bit)
Am29BDD160GB64C
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PQR080
Abstract: Am29BDD160GB64C
Text: ADVANCE INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29BDD160G
16-bit/512
32-Bit)
PQR080
Am29BDD160GB64C
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ERR03-30
Abstract: ED2A F5KF20B EB02 ERG75-01 ERG75-02 ERN04-20 ERP04-30 ERS03-40 ESJC04-05
Text: 485A 485A Q B2CÛUOO -<rmnmca 0 0 0 0 35 O O O O C LOLT >LOLOLO IPIÛ IO IO IO LA LOLOLO lo co co co co 485A 5 S 5 3 2 4 8 SA ¡e l 20C £ co CO <c< oa o o Cs w m & e s n> ® » io-y SCO CoM r-l m SS IO LO O O t' w IÜ H H m ]ëX,X ito t-O U U OS uà
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ERG75-01
ERG75-02
BRG77-10
erg27-10Ã
ERN04-20
ERNZS-08
erp04â
ERP04-30
F5KF20B
F5KF30
ERR03-30
ED2A
EB02
ERG75-02
ERN04-20
ERP04-30
ERS03-40
ESJC04-05
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ae .01z
Abstract: SM-1XZ04 RZ1125 RZ1150 RZ1200 RZ1225 S11B S12B S3V60Z 8Z1175
Text: - ü & RZllOO RZl125 RZ1150 RZ1175 RZl200 RZ122S S3V602 S11B S1ÎC SUD S12B S12C S12D S15B S15C S15D S16B S16C S16D SD-60P SD-61P SIE03-30 SJG03-30 SM-1A-01Z SM-1A-02Z SM-1A-04Z SM-1XZ02 SM-1XZ04 SR10H-1 SR10H-2 SR10H-4 SR10H-6 SR10H-8 SR10J-1 SR10J-2 % n
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RZl100
RZ1125
RZ1150
8Z1175
RZ1200
RZ1225
S3V60Z
25MIN
26MIN
ae .01z
SM-1XZ04
RZ1225
S11B
S12B
S3V60Z
8Z1175
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251C
Abstract: ERC90G-02 ERC90M-03 ERC91-02 ERD03-02 ERD03-04 ERD07-13 ERD08M-13 ERD24-02 erd07
Text: 41 41 261C 261C 41 261C 52 91E 261C 261C 261C 91E 261C 91E 91E ! 261C 41 41 ÏÏS 3 5 5 141 261C 587 261C 587 261C 91D 52 91D 52 261C 53 5t ^ ^ ^ ^ •iì 1 1 1 Sl$ü .¿Li i' ' i«|Si ^ ^ S w m & s c c er o O CGC g Y . I_ k. Q go S ili X * £ g “ Üj ißiftiflifl
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OCR Scan
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ERC90G-02
EEC90M-02
ERC90M-03
ERC91-02
ERD03-02
ERD03-04
ERD07-13
BRD07-15
ERD08M-13
ERD24-06Â
251C
ERC90G-02
ERC90M-03
ERC91-02
ERD03-04
ERD07-13
ERD08M-13
ERD24-02
erd07
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LC324256-10
Abstract: LC324256-12 LC324256 LT 6250 DIP20W lc32425612 t3383
Text: N O . W 3383A 6250 CMOS LS I L C 3 2 4 2 5 6 - 1 0 / / X • 'V > * — '••>• / 1 2 ^ 2 5 6 K x 4 l f 7 l '# Ä . Ä /& - v W K A * L C 3 2 4 2 5 6 Í/U - X í á . 2 6 2 1 4 4 ^ - K X 4 f ^ h«/i£<D 5 v m —W W Ifi^ ÍC c fc S C M O S W ' ^ ' ^ v ’/ R A M r a & S o
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T3383A
LC324256-10/12
IC324256Ã
LC324256-12
100ns
120ns
I90ns
220ns
413mW
358mW
LC324256-10
LC324256
LT 6250
DIP20W
lc32425612
t3383
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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schematic diagram ac 150 kva generator
Abstract: SAMI Star LTV 236 wq Circuit Diagram of Fan Speed Control with potenti ALLEN-BRADLEY POTENTIOMETER 81E intel 8085 microprocessor stromberg 800 kva inverter circuit diagrams SEMICONDUCTORS GENERAL CATALOG TRANSISTORS THYRISTORS DIODES LEDS Diode Thyristor 800 kva inverter diagrams
Text: Aiien-Bradiey Bulletin 1350 Adjustable Frequency AC Motor Drives by Stromberg Instruction and Maintenance Manual For Bulletin 1350 Non-Regenerative Drive sizes: 50 KVA to 1000 KVA @ 460V AC 58 KVA to 1340 KVA @ 575V AC TABLE OF CONTENTS SECTION LIST OF TITLE
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16T MARKING
Abstract: ANA 618 TL16C550 74LS245 TL16C450 TL16C452 TL16C550B MCR 2225 lpc 2238
Text: TL16C552AI DUAL ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH FIFO SLLS 189A - N O VEM BER 1994 - REVISED M ARCH 1996 • Programmable Serial Interface Characteristics for Each Channel: - 5-, 6-, 7-, or 8-Bit Characters - Even, Odd, or No Parity Bit Generation
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TL16C552AI
SLLS189A
TL16C550
16-Byte
16-MHz
Tbl724
01Q17B5
16T MARKING
ANA 618
74LS245
TL16C450
TL16C452
TL16C550B
MCR 2225
lpc 2238
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