VARI-L VCO PLL
Abstract: marking code 2- sirenza marking code sirenza SIRENZA MARKING smdi VARI-L VCO PLL 5 ghz Vari-L Company VARIL PLL
Text: MP Digest Page 1 of 5 February 2004 “K” Package VCO Module for Consumer Applications by Dan Wilmot, Clark Ragan, Marty Richardson, Sirenza Microdevices, Inc. With the acquisition of Vari-L Company, Inc. completed in May of 2003, Sirenza Microdevices, Inc. SMDI
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com/Articles/2004/Feb2004/sirenza/Default
VARI-L VCO PLL
marking code 2- sirenza
marking code sirenza
SIRENZA MARKING
smdi
VARI-L VCO PLL 5 ghz
Vari-L Company
VARIL PLL
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MCH18
Abstract: SXA-389B xa3b EL115
Text: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular
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SXA-389B
SXA-389B
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102915
MCH18
xa3b
EL115
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transistor 2.4GHz amplifier schematic
Abstract: 2.4GHz amplifier schematic SZP-2026 SZP-2026Z 2.4GHz 2w Power Amplifier transistor SOF-26 szp2026z
Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-2026Z
EDS-104611
SZP-2026Z"
SZP-2026Z*
transistor 2.4GHz amplifier schematic
2.4GHz amplifier schematic
SZP-2026
2.4GHz 2w Power Amplifier transistor
SOF-26
szp2026z
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SLD-2083CZ
Abstract: JESD22-A119 mosfet reliability testing report JESD22-A103 laser diode lifetime JESD22-A104B JESD22-A108B JESD22-A114 JESD22-B103 SLD-1083CZ
Text: Reliability Qualification Report SLD-2083CZ – RoHS compliant Products to be Qualified by Similarity SLD-1083CZ Initial Qualification 2005 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for
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SLD-2083CZ
SLD-1083CZ
RQR-104281
SLD-2083CZ
JESD22-A119
mosfet reliability testing report
JESD22-A103
laser diode lifetime
JESD22-A104B
JESD22-A108B
JESD22-A114
JESD22-B103
SLD-1083CZ
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on
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SZP-3026Z
EDS-104666
SZP-3026Z"
SZP-3026Z*
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-2026Z
EDS-104611
SZP-2026Zâ
SZP-2026Z*
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-3026Z
EDS-104666
SZP-3026Zâ
SZP-3026Z*
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SZP-5026Z
Abstract: SZP5026Z SZP-5026 Schematics 5250 SZP-5026Z-EVB1 SZP-5026Z-EVB2 bipolar transistor ghz s-parameter SOF-26 marking 535 RF
Text: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-5026Z
protecSZP-5026Z
SZP-5026Z"
35GHz
SZP-5026Z-EVB2
SZP-5026Z*
SZP-5026Z-EVB1
SOF-26
EDS-105366
SZP5026Z
SZP-5026
Schematics 5250
SZP-5026Z-EVB1
SZP-5026Z-EVB2
bipolar transistor ghz s-parameter
SOF-26
marking 535 RF
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SZP-2026Z
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-2026Z
EDS-104611
SZP-2026Z"
SZP-2026Z*
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-3026Z
EDS-104666
SZP-3026Z"
SZP-3026Z*
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SOF-26
Abstract: SZP-3026Z IN4016
Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-3026Z
EDS-104666
SZP-3026Z"
SZP-3026Z*
SOF-26
IN4016
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Untitled
Abstract: No abstract text available
Text: Preliminary NGA-686 Product Description Sirenza Microdevices NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance
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NGA-686
NGA-686
DC-6000
AN-059
EDS-101106
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam
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SZA-6044
SZA-6044
SZA-6044"
EDS-103535
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V 2238
Abstract: mark 6044 SZA-6044 MAX5900
Text: Preliminary Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam
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SZA-6044
SZA-6044
SZA-6044"
EDS-103535
V 2238
mark 6044
MAX5900
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SOF-26
Abstract: SZP-3026Z SZP-3026 IN4016
Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-3026Z
EDS-104666
SZP-3026Z"
SZP-3026Z*
SOF-26
SZP-3026
IN4016
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-3026Z
EDS-104666
SZP-3026Zâ
SZP-3026Z*
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-2026Z
EDS-104611
SZP-2026Z"
SZP-2026Z*
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transistor u8 2w
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-5026Z
EDS-105366
SZP-5026Z"
SZP-5026Z*
SZP-5026Z-EVB1
SZP-5026Z-EVB2
35GHz
SOF-26
transistor u8 2w
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2.4GHz 2w Power Amplifier transistor
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-2026Z
EDS-104611
SZP-2026Z"
SZP-2026Z*
2.4GHz 2w Power Amplifier transistor
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP
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SZP-2026Z
EDS-104611
SZP-2026Z"
SZP-2026Z*
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s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ STA-5063 is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically
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STA-5063
EDS-102990
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
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Bw5 transistor
Abstract: SBW transistor sbw marking
Text: Preliminary Data Sheet SBW-5089 Product Description DC-8 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBW-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP
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SBW-5089
SBW-5089
MM50V
ML200C,
ECB-100607
EDS-103325
Bw5 transistor
SBW transistor
sbw marking
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marking 34 sot-363 rf
Abstract: DARLINGTON TIN GERMANIUM SMALL SIGNAL TRANSISTORS SIRENZA MARKING SOT-363 SGC-2463Z Sirenza Microdevices, Inc 239 sot363
Text: Preliminary Information SGC-2463Z Product Description Sirenza Microdevices’ SGC-2463Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature
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SGC-2463Z
SGC-2463Z
OT-363
EDS-104975
marking 34 sot-363 rf
DARLINGTON TIN
GERMANIUM SMALL SIGNAL TRANSISTORS
SIRENZA MARKING SOT-363
Sirenza Microdevices, Inc
239 sot363
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NGA-489
Abstract: No abstract text available
Text: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-489
NGA-489
NGA489
EDS-100375
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