SBL30L30CT
Abstract: 35v smps
Text: E L E C T R O N I C The improved Low VF Schottkys Monday, 6 August 2007 Sirectifier Global Corp. SGC recently announced that the improved low Forward Voltage Drop (VF) Schottkys of 30V, 45 and 60V families. The improved alloy barrier Schottkys obtained the lowest VF characteristic to reduce the conduction loss of the SMPS application.
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SBL30L30CT
O-220AB)
2555CT/PT
SBL4060CT/PT
SBL30L30CT
35v smps
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SB1545
Abstract: st1235 st1020 IR 2638 ST1035 sb1250 ST1535SC st-3020
Text: s Sirectifier Semiconductors N g g P Green Product Copyright 2008 Sirectifier Global Corp. All Right Reserved Introduction In BIPV Building-Integrated Photovoltaic systems, the Photovoltaic solar cells can be imbedded into standard building materials such as roofs and
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SR008116
SB1545
st1235
st1020
IR 2638
ST1035
sb1250
ST1535SC
st-3020
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SOT-227 Package
Abstract: Barksdale newark Sirectifier ITO-220
Text: E L E C T R O N I C Our Package January 2007 /Rev. 2 SOD-523 SOT-23 SOT-323 SOT-363 SOT-563 SOT-23-6 SMA SMB SMC DO-41 DO-201AD TO-126 TO-92 D-PAK D2-PAK TO-220 ITO-220 Fig. 9 Fig. 10 Fig. 12 Fig. 17 Fig. 14 Fig. 15 TO-247/ TO-3P Fig. 16 SOT-227 Sirectifier Global Corp., Delaware, U.S.A.
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OD-523
OT-23
OT-323
OT-363
OT-563
OT-23-6
DO-41
DO-201AD
O-126
O-220
SOT-227 Package
Barksdale
newark
Sirectifier
ITO-220
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Untitled
Abstract: No abstract text available
Text: E L E C T R O N I C Surface Mount SMA & SMB Low VF Schottkys Friday, 2 March 2012 Sirectifier Global Corp. SGC announced that the package of SMA & SMB surface-mount SBD for the high-efficiency portable and SMPS applications. The lowest forward-drop Voltage(VF) of these between 0.35V and 0.40V at the temperature of 125°C. The followings are the already provided item
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A/40V
A/60V
DO-214AC
DO214AA
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MBR40200
Abstract: MBR40150 MBR10B100FCTH MBR20B100FCTH SB3200 SB3150 MBR20B150FCTH MBR20200PT MBR20B100FCT MBR50100PT
Text: s SirectSemi N g g P Green Product Copyright 2009 Sirectifier Global Corp. All Right Reserved Barrier & Breakdown Voltage V B Electronic Characteristics (V F @ 125°C & IR @ 25°C) Pt (Platinum) Barrier, 45-200V Highest Tj (150-175°C) and lowest I R (less than 10 A)
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5-200V
0-60V
00-150V
SR009015
MBR40200
MBR40150
MBR10B100FCTH
MBR20B100FCTH
SB3200
SB3150
MBR20B150FCTH
MBR20200PT
MBR20B100FCT
MBR50100PT
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sr 560fc
Abstract: 560FC sb360 do-27 MBR20100CT SB360 3 rectifier AC0541 MBR20100C SB56 DATE CODE ZA
Text: E L E C T R O N I C Device Marking of Power Schottky June 2005 1. DO-41/ DO-15 / DO-27 DO-201AD No Item Description 1 Brand “SR” is the condensation of Sirectifier 2 Part Number Show the part number of Sirectifier 3 Rectifier Direction To show the direction of the Cathode(-)
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DO-41/
DO-15
DO-27
DO-201AD)
SB360
O-126
560FC
SB560FC)
MBR20100CT
AC0541
sr 560fc
sb360 do-27
SB360
3 rectifier
AC0541
MBR20100C
SB56
DATE CODE ZA
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1.2V solar garden light
Abstract: solar dc light system TO-263AC by-pass solar cell Solar Garden Light pv bypass diode
Text: E L E C T R O N I C The Application of the “By-pass” Diode for Solar Cell Monday, 19 November 2007 Sirectifier Global Corp. SGC announced that the new “By-pass” diode which with lower forward voltage drop (VF) for many kinds of DC to DC application especially in the solar cell fields.
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O-263AC
1.2V solar garden light
solar dc light system
TO-263AC
by-pass
solar cell
Solar Garden Light
pv bypass diode
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1.2V solar garden light
Abstract: Solar Garden Light diode F8 23 by-pass solar cell
Text: E L E C T R O N I C The New “By-pass” Diode Friday, 23 November 2007 Sirectifier Global Corp. SGC announced that the new “By-pass” diode which with lower forward voltage drop (VF) for many kinds of DC to DC application especially in the solar cell fields.
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newark
Abstract: L054BT26 15KV LR052BT14
Text: E L E C T R O N I C ESD Protector Application Friday, 18 July 2008 Sirectifier Global Corp., Delaware, U.S.A. Sales Representatives: U.S.A. 113 Barksdale Professional Center in the City of Newark, County of New Castle, Delaware e-mail: sgc@sirectsemi.com China Room 320, Building Chaohui,
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L054BT26
newark
L054BT26
15KV
LR052BT14
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Untitled
Abstract: No abstract text available
Text: S3A … S3M Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case Kunststoffgehäuse ~ SMC ~ DO-214AB Weight approx. – Gewicht ca.
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DO-214AB
UL94V-0
100/C
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diode IN 4007
Abstract: free download datasheet IN 4007 DO-213AB 4007 4007 diode do-213AB IN 4001 IN 4007 in 4007 diode in 4007 rectifier diode peak current of IN 4007 DO-213ab
Text: SM 4001 Q … SM 4007 Q Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case QuadroMELF Kunststoffgehäuse QuadroMELF
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DO-213AB
UL94V-0
175/C
100/C
tter\Sondertypen\sm400-q
diode IN 4007
free download datasheet IN 4007
DO-213AB 4007
4007 diode do-213AB
IN 4001
IN 4007
in 4007 diode
in 4007 rectifier diode
peak current of IN 4007
DO-213ab
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Untitled
Abstract: No abstract text available
Text: S3A … S3M Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case – Kunststoffgehäuse ~ DO-214AB ~ SMC Weight approx. – Gewicht ca.
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DO-214AB
UL94V-0
150/C
100/C
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500 uf
Abstract: No abstract text available
Text: UF 5400 . UF 5408 Ultrafast Switching Si-Rectifiers Ultraschnelle Si-Gleichrichter Nominal current – Nennstrom 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50.1000 V Plastic case Kunststoffgehäuse ~ DO-201 Weight approx. – Gewicht ca.
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DO-201
UL94V-0
150/C
175/C
125/C
500 uf
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marking 34A
Abstract: No abstract text available
Text: GL 34A . GL 34M Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom 0.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF SOD-80
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OD-80
DO-213AA
UL94V-0
125/C
marking 34A
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minimelf blue
Abstract: minimelf white violet
Text: GL 34A . GL 34M Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage 0.4 3.5 0.4 1.6 Nominal current – Nennstrom Dimensions / Maße in mm 0.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case MiniMELF
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OD-80
DO-213AA
UL94V-0
175LC
125LC
minimelf blue
minimelf white violet
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sm 4007
Abstract: CA 4007
Text: SM 4001 … SM 4007 SM 513, SM 516, SM 518, SM 2000 Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…2000 V 0.5 Plastic case MELF Kunststoffgehäuse MELF
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UL94V-0
DO-213AB
175LC
100LC
sm 4007
CA 4007
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Untitled
Abstract: No abstract text available
Text: Si–A 3000/1350–2.5 High Voltage Si-Rectifier Modul Si-Hochspannungs-Gleichrichter Modul Nominal current – Nennstrom 2.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case 8000 V Ø 55 x 36 [mm] Kunststoffgehäuse Weight approx. – Gewicht ca.
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UL94V-0
150LC
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marking 34A
Abstract: No abstract text available
Text: EGL 34A . EGL 34G Ultrafast Switching Surface Mount Si-Rectifiers Ultraschnelle Si-Gleichrichter für die Oberflächenmontage 0.4 3.5 0.4 1.6 Nominal current – Nennstrom 0.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…400 V
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OD-80
DO-213AA
UL94V-0
125/C
marking 34A
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diode 40amp
Abstract: No abstract text available
Text: E L E C T R O N I C SBL4060CT Power Schottky Rectifier - 40Amp 60Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity
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SBL4060CT
40Amp
60Volt
O-220AB
diode 40amp
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MBR2045CT
Abstract: MBR2045
Text: E L E C T R O N I C MBR2045CT Power Schottky Rectifier - 20Amp 45Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications-94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity
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MBR2045CT
20Amp
45Volt
Classifications-94V-0
O-220AB
MBR2045CT
MBR2045
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Untitled
Abstract: No abstract text available
Text: International SIRectifier Provisional Data Sheet No. PD-9.1400 IRHY9130CM JANSR2N7382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD •100 Volt, 0.30Q, RAO HARD HEXFET International Rectifier’s P-Channel RAD HARD technology
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OCR Scan
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IRHY9130CM
JANSR2N7382
MIL-PRF-19500/615]
Liguria49
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C989
Abstract: No abstract text available
Text: International @siRectifier Provisional Data Sheet PD-9.1184 IRGKIN075K06 "CHOPPER" IGBT INT-A-PAK Low conduction loss IGBT VCE = 600V lc =75A • Rugged Design • Simple gate-drive •Switching-Loss Ra losses • Short circuit rated Vce ON <2.7V ^ > 10^8
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IRGKIN075K06
C-990
C989
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Untitled
Abstract: No abstract text available
Text: Bulletin 12019/A International SIRectifier i 3 o h f R s e r ie s STANDARD RECOVERY DIODES Stud Version 130 A Features • H igh c u rre n t c a rry in g c a p a b ility ■ H igh s u rg e c u rre n t c a p a b ility ■ T y p e s up to 1200V V RRM ■ S tu d c a th o d e and stu d a n o d e v e rs io n
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OCR Scan
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12019/A
4A55452
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TRANSISTOR 132-gd
Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n
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06o3H
TRANSISTOR 132-gd
TRANSISTORS 132 GD
equivalent io transistor 131-G
bbc ds diodes DS 1,8
transistor vergleichsliste
aeg diode Si 61 L
AF124
Transistor Vergleichsliste DDR
OC1044
bbc ds diodes
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