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    SIR80 Price and Stock

    Vishay Siliconix SIR800ADP-T1-GE3

    MOSFET N-CH 20V 50.2A/177A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR800ADP-T1-GE3 Cut Tape 8,954 1
    • 1 $1.52
    • 10 $1.265
    • 100 $1.52
    • 1000 $0.72383
    • 10000 $0.72383
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    SIR800ADP-T1-GE3 Digi-Reel 8,954 1
    • 1 $1.52
    • 10 $1.265
    • 100 $1.52
    • 1000 $0.72383
    • 10000 $0.72383
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    SIR800ADP-T1-GE3 Reel 3,000 3,000
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    • 10000 $0.63308
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    Vishay Siliconix SIR800ADP-T1-RE3

    MOSFET N-CH 20V 50.2A/177A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR800ADP-T1-RE3 Digi-Reel 7,955 1
    • 1 $0.91
    • 10 $0.788
    • 100 $0.91
    • 1000 $0.38687
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    SIR800ADP-T1-RE3 Cut Tape 7,955 1
    • 1 $0.91
    • 10 $0.788
    • 100 $0.91
    • 1000 $0.38687
    • 10000 $0.38687
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    SIR800ADP-T1-RE3 Reel 6,000 3,000
    • 1 -
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    • 10000 $0.33757
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    Vishay Siliconix SIR800DP-T1-GE3

    MOSFET N-CH 20V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR800DP-T1-GE3 Digi-Reel 4,374 1
    • 1 $1.6
    • 10 $1.336
    • 100 $1.6
    • 1000 $0.75666
    • 10000 $0.75666
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    SIR800DP-T1-GE3 Cut Tape 4,374 1
    • 1 $1.6
    • 10 $1.336
    • 100 $1.6
    • 1000 $0.75666
    • 10000 $0.75666
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    SIR800DP-T1-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
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    • 10000 $0.65875
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    Vishay Siliconix SIR804DP-T1-GE3

    MOSFET N-CH 100V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR804DP-T1-GE3 Digi-Reel 1,699 1
    • 1 $2.62
    • 10 $2.203
    • 100 $2.62
    • 1000 $1.21621
    • 10000 $1.21621
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    SIR804DP-T1-GE3 Cut Tape 1,699 1
    • 1 $2.62
    • 10 $2.203
    • 100 $2.62
    • 1000 $1.21621
    • 10000 $1.21621
    		Buy Now

    Vishay Siliconix SIR802DP-T1-GE3

    MOSFET N-CH 20V 30A PPAK SO-8
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    DigiKey SIR802DP-T1-GE3 Reel
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    SIR802DP-T1-GE3 Cut Tape
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    SIR802DP-T1-GE3 Digi-Reel 1
    • 1 $0.85
    • 10 $0.85
    • 100 $0.85
    • 1000 $0.85
    • 10000 $0.85
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    Quest Components SIR802DP-T1-GE3 54
    • 1 $1.17
    • 10 $0.975
    • 100 $0.702
    • 1000 $0.702
    • 10000 $0.702
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    Find more SIR80 price and stock on Findchips.com

    SIR80 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR800ADP-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V PPAK SO-8 Original PDF
    SIR800ADP-T1-RE3 Vishay Siliconix MOSFET N-CH 20V 50.2A/177A PPAK Original PDF
    SIR800DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 50A 8-SOIC Original PDF
    SIR802DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 30A 8-SOIC Original PDF
    SIR804DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A 8-SOIC Original PDF
    SIR808DP-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 20A POWERPAK Original PDF

    SIR80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR800DP 2002/95/EC SiR800DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR808DP_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR808DP AN609, 1555m 2783u 6809m 4813m 5804m 2240u 7492m 23-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR804DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF SiR804DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR800DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR800DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR802DP 2002/95/EC SiR802DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR802DP 2002/95/EC SiR802DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    67550

    Abstract: 0408 G Diode
    Text: SPICE Device Model SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR808DP 11-Mar-11 67550 0408 G Diode

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR800DP 18-Jul-08

    SIR804DP

    Abstract: sir804dp-t1-ge3
    Text: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR804DP 2002/95/EC SiR804DP-T1-GE3 18-Jul-08

    8253

    Abstract: AN609
    Text: SiR802DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR802DP AN609, 05-Feb-10 8253 AN609

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR800DP 2002/95/EC SiR800DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR802DP 2002/95/EC SiR802DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR802DP 2002/95/EC SiR802DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR804DP 2002/95/EC SiR804DP-T1-GE3 18-Jul-08

    sir808

    Abstract: No abstract text available
    Text: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter


    Original     		PDF SiR808DP 2002/95/EC SiR808DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir808

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR804DP 2002/95/EC SiR804DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter


    Original     		PDF SiR808DP 2002/95/EC SiR808DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR804DP 2002/95/EC SiR804DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR802DP 2002/95/EC SiR802DP-T1-GE3 18-Jul-08

    S10031

    Abstract: SiR802DP
    Text: SPICE Device Model SiR802DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR802DP 18-Jul-08 S10031

    SiR800DP

    Abstract: No abstract text available
    Text: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR800DP 2002/95/EC SiR800DP-T1-GE3 18-Jul-08

    SIR808DP-T1-GE3

    Abstract: No abstract text available
    Text: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter


    Original     		PDF SiR808DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SIR808DP-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR804DP 2002/95/EC SiR804DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR802DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR802DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12