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    SINGLE P-CHANNEL, LOGIC LEVEL, POWERTRENCH MOSFET Search Results

    SINGLE P-CHANNEL, LOGIC LEVEL, POWERTRENCH MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SINGLE P-CHANNEL, LOGIC LEVEL, POWERTRENCH MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDC658AP

    Abstract: Single P-Channel, Logic Level, PowerTrench MOSFET marking I58 marking 58A
    Text: FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50m: General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications.


    Original     		PDF FDC658AP FDC658AP Single P-Channel, Logic Level, PowerTrench MOSFET marking I58 marking 58A

    marking 58A

    Abstract: FDC658AP Single P-Channel, Logic Level, PowerTrench MOSFET 30V P-Channel Logic Level PowerTrench MOSFET
    Text: FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50mΩ General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications.


    Original     		PDF FDC658AP marking 58A FDC658AP Single P-Channel, Logic Level, PowerTrench MOSFET 30V P-Channel Logic Level PowerTrench MOSFET

    marking 654

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF FDC654P FDC654P marking 654

    si3457dv

    Abstract: Single P-Channel, Logic Level, PowerTrench MOSFET
    Text: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V.


    Original     		PDF Si3457DV Single P-Channel, Logic Level, PowerTrench MOSFET

    Untitled

    Abstract: No abstract text available
    Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF Si3455DV

    Untitled

    Abstract: No abstract text available
    Text: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V.


    Original     		PDF Si3457DV

    p-channel 7121

    Abstract: Supersot 6 Si3455DV SI3455DV MARKING
    Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF Si3455DV p-channel 7121 Supersot 6 SI3455DV MARKING

    Untitled

    Abstract: No abstract text available
    Text: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V.


    Original     		PDF Si3457DV

    Si3455DV

    Abstract: No abstract text available
    Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF Si3455DV

    FDC654P

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF FDC654P FDC654P

    si3457dv

    Abstract: No abstract text available
    Text: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V.


    Original     		PDF Si3457DV

    marking A36A

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF FDC654P marking A36A

    Untitled

    Abstract: No abstract text available
    Text: January 2001 Si4425DY Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features -11 A, -30 V. RDS ON = 0.014 Ω @ VGS = -10 V, RDS(ON) = 0.020 Ω @ VGS = -4.5 V. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench


    Original     		PDF Si4425DY OT-23

    FDS6575

    Abstract: F63TNR F852 SOIC-16
    Text: November 1998 FDS6575 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS6575 OT-23 FDS6575 F63TNR F852 SOIC-16

    FDC654P

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V. RDS ON = 75 mΩ @ V GS = –10 V


    Original     		PDF FDC654P FDC654P

    Untitled

    Abstract: No abstract text available
    Text: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original     		PDF FDS6675 OT-23

    Untitled

    Abstract: No abstract text available
    Text: February 2007 FDN340P  Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize


    Original     		PDF FDN340P

    CBVK741B019

    Abstract: F63TNR FDC633N FDC658P SOIC-16 r rca 631
    Text: February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDC658P OT-23 CBVK741B019 F63TNR FDC633N FDC658P SOIC-16 r rca 631

    CBVK741B019

    Abstract: F63TNR FDC633N FDC658P SOIC-16
    Text: February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDC658P OT-23 CBVK741B019 F63TNR FDC633N FDC658P SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: February 1999 FAIRCHILD M IC D N D U C T Q R ! FDC65 8P Single P-Channel, Logic Level, PowerTrench General Description Features This P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		PDF FDC65

    SSOT-6

    Abstract: FDC658P CBVK741B019 D872 F63TNR FDC633N y734
    Text: FAIRCHILD February 1999 S E M IC O N D U C T O R TM FDC65 8P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		PDF FDC65 SOl-21 extremely180 SSOT-6 FDC658P CBVK741B019 D872 F63TNR FDC633N y734

    Untitled

    Abstract: No abstract text available
    Text: October 1998 F A IR C H IL D SEM IC O N D UC TO R tm FDS6675 Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


    OCR Scan     		PDF FDS6675

    tic 2260

    Abstract: FDS4435 CBVK741B019 F63TNR L86Z
    Text: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS4435 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features This P-Channel Logic Level M OSFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize


    OCR Scan     		PDF FDS4435 tic 2260 FDS4435 CBVK741B019 F63TNR L86Z

    fds4435 mosfet

    Abstract: Power MOSFET, Fairchild FDS4435 ds4435 2197f
    Text: FDS4435 FAIRCHILD October 1998 S E M I C O N D U C T O R TM FDS4435 Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		PDF FDS4435 FDS4435 DS4435 fds4435 mosfet Power MOSFET, Fairchild 2197f