transistor smd zy
Abstract: BAS116T SC-75 MLB754
Text: BAS116T Single low leakage current switching diode Rev. 01 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Single low leakage current switching diode, encapsulated in a SOT416 SC-75 ultra small Surface-Mounted Device (SMD) plastic package.
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BAS116T
OT416
SC-75)
AEC-Q101
BAS116T
transistor smd zy
SC-75
MLB754
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NXP SMD DIODE MARKING CODE T4
Abstract: No abstract text available
Text: SO T4 16 BAS116T Single low leakage current switching diode Rev. 2 — 9 July 2012 Product data sheet 1. Product profile 1.1 General description Single low leakage current switching diode, encapsulated in an ultra small SOT416 SC-75 Surface-Mounted Device (SMD) plastic package.
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BAS116T
OT416
SC-75)
AEC-Q101
NXP SMD DIODE MARKING CODE T4
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Untitled
Abstract: No abstract text available
Text: SO T4 16 BAS116T Single low leakage current switching diode Rev. 2 — 9 July 2012 Product data sheet 1. Product profile 1.1 General description Single low leakage current switching diode, encapsulated in an ultra small SOT416 SC-75 Surface-Mounted Device (SMD) plastic package.
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BAS116T
OT416
SC-75)
AEC-Q101
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BAT54T
Abstract: SC-75
Text: BAT54T Single Schottky barrier diode Rev. 01 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT416 SC-75 ultra small Surface-Mounted Device (SMD) plastic
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BAT54T
OT416
SC-75)
AEC-Q101
BAT54T
SC-75
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Untitled
Abstract: No abstract text available
Text: BAT54T Single Schottky barrier diode Rev. 01 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT416 SC-75 ultra small Surface-Mounted Device (SMD) plastic
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BAT54T
OT416
SC-75)
AEC-Q101
BAT54T
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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LM1MA141KT1G
LM1MA142KT1G
70/SOTâ
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: FDFMJ2P023Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode tm –20V, –2.9A, 112mΩ Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other
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FDFMJ2P023Z
SC-75
FDFMJ2P023Z
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schottky diode 100A
Abstract: FDFMJ2P023Z SC-75 marking p23
Text: FDFMJ2P023Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode tm –20V, –2.9A, 112mΩ Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other
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FDFMJ2P023Z
SC-75
FDFMJ2P023Z
schottky diode 100A
marking p23
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FDJ1027P
Abstract: SC75
Text: FDJ1027P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS ON and thermal properties of the device are optimized for battery power
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FDJ1027P
FDJ1027P
SC75
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FDJ1028N
Abstract: SC75
Text: FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description Features This dual N-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS ON and thermal properties of the device are optimized for battery power
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FDJ1028N
SC75lopment.
FDJ1028N
SC75
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Untitled
Abstract: No abstract text available
Text: FDJ1027P P-Channel 1.8V Specified PowerTrench MOSFET Features General Description • –2.8 A, –20 V This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS ON and thermal properties of the device are
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FDJ1027P
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C4125
Abstract: FDJ1027P SC75 P-Channel 1.8V MOSFET FLMP
Text: FDJ1027P P-Channel 1.8V Specified PowerTrench MOSFET Features General Description • –2.8 A, –20 V This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS ON and thermal properties of the device are
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FDJ1027P
C4125
FDJ1027P
SC75
P-Channel 1.8V MOSFET FLMP
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Untitled
Abstract: No abstract text available
Text: FDJ1027P P-Channel 1.8V Specified PowerTrench MOSFET Features General Description • –2.8 A, –20 V This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS ON and thermal properties of the device are
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FDJ1027P
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SC75
Abstract: SiB413DK-T1-E3
Text: New Product SiB413DK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 20 ID (A)a, f 0.075 at VGS = - 4.5 V -9 0.143 at VGS = - 2.5 V - 7.8 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC75 Package
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SiB413DK
SC-75-6L-Single
SiB413DK-T1-E3
08-Apr-05
SC75
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Untitled
Abstract: No abstract text available
Text: Si1046R Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.420 at VGS = 4.5 V ID (A) 0.606 Qg (Typ.) 0.501 at VGS = 2.5 V 0.505 0.92 0.660 at VGS = 1.8 V 0.150 a APPLICATIONS SC75-3L G • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
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Si1046R
SC75-3L
Si1046R-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si1046R Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.420 at VGS = 4.5 V ID (A) 0.606 Qg (Typ.) 0.501 at VGS = 2.5 V 0.505 0.92 0.660 at VGS = 1.8 V 0.150 a APPLICATIONS SC75-3L G • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
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Si1046R
SC75-3L
Si1046R-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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BAW56
Abstract: BAW56S MARKING SOT23 a1s
Text: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323
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BAW56.
BAW56
BAW56T
BAW56W
BAW56S
BAW56U
BAW56U
MARKING SOT23 a1s
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BAW56S
Abstract: BAW56
Text: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323
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BAW56.
BAW56
BAW56T
BAW56W
BAW56S
BAW56U
BAW56U
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A1s sot23
Abstract: BAW56S E6327 MARKING CODE A1s
Text: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323
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BAW56.
BAW56
BAW56T
BAW56W
BAW56S
BAW56U
BAW56U
A1s sot23
BAW56S E6327
MARKING CODE A1s
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smd schottky diode s6
Abstract: smd schottky diode marking s4 smd schottky diode marking s6 smd schottky diode s6 05 S4 44 DIODE schottky 1PS75SB45 BAS40 SC-70 diode marking table S4 DIODE schottky smd schottky diode s4
Text: BAS40 series; 1PSxxSB4x series General-purpose Schottky diodes 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number Package Configuration Philips
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BAS40
1PS70SB40
OT323
SC-70
1PS76SB40
OD323
SC-76
1PS79SB40
OD523
SC-79
smd schottky diode s6
smd schottky diode marking s4
smd schottky diode marking s6
smd schottky diode s6 05
S4 44 DIODE schottky
1PS75SB45
BAS40 SC-70
diode marking table
S4 DIODE schottky
smd schottky diode s4
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smd schottky diode s6
Abstract: smd schottky diode marking s4 1PS75SB45 smd schottky diode s6 34 1PS70SB44 1PS76SB40 1PS79SB40 BAS40 BAS40-04 BAS40H
Text: BAS40 series; 1PSxxSB4x series General-purpose Schottky diodes 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number Package Configuration Philips
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BAS40
1PS70SB40
OT323
SC-70
1PS76SB40
OD323
SC-76
1PS79SB40
OD523
SC-79
smd schottky diode s6
smd schottky diode marking s4
1PS75SB45
smd schottky diode s6 34
1PS70SB44
1PS76SB40
1PS79SB40
BAS40-04
BAS40H
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"marking CODE A6" SOD882
Abstract: JEDEC sod323 SC90 BAS16H BAS16J diode SMD MARKING CODE A6 BAS16 SOD882 A6 SOT323 marking JT BAS16J, BAS316 BAS16T BAS16VV
Text: BAS16 series High-speed switching diodes 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number Package Configuration Package configuration
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BAS16
BAS16
O-236AB
BAS16H
OD123F
BAS16J
OD323F
SC-90
BAS16L
OD882
"marking CODE A6" SOD882
JEDEC sod323 SC90
BAS16H
BAS16J
diode SMD MARKING CODE A6
BAS16 SOD882 A6
SOT323 marking JT
BAS16J, BAS316
BAS16T
BAS16VV
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diagram LG LCD TV circuits
Abstract: schematic LG TV lcd backlight inverter schematic LG lcd backlight inverter schematic diagram inverter 12v to 24v 30a lg lcd tv POWER SUPPLY SCHEMATIC lg led tv internal parts block diagram diagram power supply LG 32 in LCD TV circuits KIA78033F regulator KIA78 ic philips lcd tv inverter schematic
Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For LCD TV / Monitor http://www.keccorp.com Sales Engineering G 2006. 04. REV 3.31 First & Best KEC Products Line up for LCD TV & MNT IC’s Discrete Transistor G/P Transistor Power Regulator Management
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OD-523
OD-323
OD323-2-1
SC-76)
OD-123FL
OT-723
OT-23
OT-89
diagram LG LCD TV circuits
schematic LG TV lcd backlight inverter
schematic LG lcd backlight inverter
schematic diagram inverter 12v to 24v 30a
lg lcd tv POWER SUPPLY SCHEMATIC
lg led tv internal parts block diagram
diagram power supply LG 32 in LCD TV circuits
KIA78033F
regulator KIA78 ic
philips lcd tv inverter schematic
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smd schottky diode marking s4
Abstract: BAS401 1PS75SB45 smd schottky diode s6 1PS70SB44 1PS76SB40 1PS79SB40 BAS40 BAS40-04 BAS40H
Text: BAS40 series; 1PSxxSB4x series General-purpose Schottky diodes 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number Package Configuration Philips
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BAS40
1PS70SB40
OT323
SC-70
1PS76SB40
OD323
SC-76
1PS79SB40
OD523
SC-79
smd schottky diode marking s4
BAS401
1PS75SB45
smd schottky diode s6
1PS70SB44
1PS76SB40
1PS79SB40
BAS40-04
BAS40H
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