LT1817 transistor
Abstract: LT1815 LT1815CS5 LT1815IS5 marking G28 G28 SOT-23 g28 SOT23 marking g31 sot23 1817I LTNQ
Text: LT1815 LT1816/LT1817 Single/Dual/Quad 220MHz, 1500V/µs Operational Amplifiers with Programmable Supply Current U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 220MHz Gain-Bandwidth Product 1500V/µs Slew Rate 6.5mA Supply Current per Amplifier
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LT1815
LT1816/LT1817
220MHz,
220MHz
OT-23,
800nA
LT1395/LT1396/LT1397
400MHz
LT1806/LT1807
325MHz,
LT1817 transistor
LT1815
LT1815CS5
LT1815IS5
marking G28
G28 SOT-23
g28 SOT23
marking g31 sot23
1817I
LTNQ
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LT1815
Abstract: LT1815CS5 LT1815IS5 marking g31 sot23
Text: LT1815 LT1816/LT1817 Single/Dual/Quad 220MHz, 1500V/µs Operational Amplifiers with Programmable Supply Current U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 220MHz Gain-Bandwidth Product 1500V/µs Slew Rate 6.5mA Supply Current per Amplifier
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Original
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LT1815
LT1816/LT1817
220MHz,
220MHz
OT-23
800nA
LT1395/LT1396/LT1397
400MHz
LT1806/LT1807
325MHz,
LT1815
LT1815CS5
LT1815IS5
marking g31 sot23
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PDF
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H12A TO8-12
Abstract: Dual Comparators fet input LH0033CG LH0032 op amp H12A LH0033 LH0033C LH0033G
Text: Fast Buffer CORPORATION LH0033 / LH0033C GENERAL DESCRIPTION FEATURES • Slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V/µs • Wide range single or dual supply operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100MHz
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Original
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LH0033
LH0033C
100MHz
103ns
250mA
100mA)
150pF
300pF
LH0033
H12A TO8-12
Dual Comparators fet input
LH0033CG
LH0032
op amp
H12A
LH0033C
LH0033G
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LH0033
Abstract: LH0033CG Calogic buffers H12A TO8-12 LM711 H12A LH0033C LH0033G LH0032
Text: Fast Buffer LLC LH0033 / LH0033C GENERAL DESCRIPTION FEATURES • Slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V/µs • Wide range single or dual supply operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100MHz
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LH0033
LH0033C
100MHz
103ns
250mA
100mA)
150pF
300pF
LH0033
LH0033CG
Calogic
buffers
H12A TO8-12
LM711
H12A
LH0033C
LH0033G
LH0032
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LH0032
Abstract: No abstract text available
Text: Fast Buffer LLC LH0033 / LH0033C FEATURES GENERAL DESCRIPTION • Slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V/µs • Wide range single or dual supply operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100MHz
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LH0033
LH0033C
500V/Â
100MHz
103ns
250mA
100mA
150pF
300pF
LH0032
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LT1817 transistor
Abstract: LT1815 LT1816 LT1817 pnp 1500v 8a
Text: LT1815/LT1816/LT1817 Single/Dual/Quad 220MHz, 1500V/µs Operational Amplifiers with Programmable Supply Current DESCRIPTION FEATURES n n n n n n n n n n n n n n n 220MHz Gain-Bandwidth Product 1500V/ s Slew Rate 6.5mA Supply Current per Amplifier Programmable Current Option
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Original
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LT1815/LT1816/LT1817
220MHz,
220MHz
500V/s
800nA
OT-23
LT1395/LT1396/LT1397
400MHz
00V/s,
LT1806/LT1807
LT1817 transistor
LT1815
LT1816
LT1817
pnp 1500v 8a
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Untitled
Abstract: No abstract text available
Text: LT1815/LT1816/LT1817 Single/Dual/Quad 220MHz, 1500V/µs Operational Amplifiers with Programmable Supply Current DESCRIPTION FEATURES n n n n n n n n n n n n n n n 220MHz Gain-Bandwidth Product 1500V/ s Slew Rate 6.5mA Supply Current per Amplifier Programmable Current Option
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Original
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LT1815/LT1816/LT1817
220MHz,
500V/Â
220MHz
800nA
OT-23
LT1395/LT1396/LT1397
400MHz
LT1806/LT1807
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF10N300C VCES = 3000V IC110 = 10A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF10N300C
IC110
10N300C
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1B15N300C
IC110
15N300C
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF15N300C
IC110
15N300C
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B20N300C VCES = 3000V IC110 = 20A VCE sat 6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1B20N300C
IC110
20N300C
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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Original
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IXBF20N360
IC110
20N360
H7-B11)
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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Original
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IXBF20N360
IC110
20N360
H7-B11)
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL20N300C VCES = 3000V IC110 = 20A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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Original
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IXBL20N300C
IC110
20N300C
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C
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IC110
IXBF42N300
100ms
42N300
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C
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Original
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IXBF42N300
IC110
IC110
100ms
100ms
42N300
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N300HV VCES = 3000V IC110 = 42A VCE sat ≤ 3.0V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBT42N300HV
IC110
O-268
100ms
42N300
1-09-12-A
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PDF
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IXBT42N300HV
Abstract: transistor 42A
Text: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N300HV VCES = 3000V IC110 = 42A VCE sat ≤ 3.0V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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Original
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IXBT42N300HV
IC110
O-268
IC110
100ms
42N300
1-09-12-A
IXBT42N300HV
transistor 42A
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = 3000V IC90 = 28A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ VCGR TJ = 25°C to 150°C, RGE = 1M
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Original
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IXBF28N300
100ms
28N300
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 VCES = 3000V IC90 = 14A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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Original
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IXBF14N300
100ms
14N300
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 VCES = 3000V IC90 = 22A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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Original
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IXBF22N300
100ms
22N300
3-10-14-A
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol IXBV22N300S Test Conditions VCES = 3000V IC110 = 22A VCE sat 2.7V PLUS220SMDHV Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M
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IXBV22N300S
IC110
PLUS220SMDHV
100ms
22N300
3-10-14-A
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PDF
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LH0033
Abstract: op amp automatic offset H12A LH0033C LH0033CG LH0033G LH0032
Text: Fast Buffer calori« CO RPO RATIO N \J LH0033 GENERAL DESCRIPTION FEATURES • • • • • • • • Slew rate . 1500V/|is Wide range single or dual supply operation B a n d w id th . 100MHz
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OCR Scan
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LH0033
100MHz
250mA
150pF
150pF
-300pF
220S2
000fl2tÃ
1000pF
LH0033
op amp automatic offset
H12A
LH0033C
LH0033CG
LH0033G
LH0032
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5386 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV J 5 .5 ± 0 .5 HIGH SPEED SWITCHING APPLICATIONS • • • • i/i High Voltage : VCBO= 1500V
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OCR Scan
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2SC5386
95MAX
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