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    SINGLE 1500V TRANSISTOR Search Results

    SINGLE 1500V TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2393-A1-E#T0 Renesas Electronics Corporation Nch Single Power MOSFET 1500V 8A 2800mOhm TO-264A Visit Renesas Electronics Corporation
    2SK2225-E Renesas Electronics Corporation Nch Single Power Mosfet 1500V 2A Mohm To-3Pfm Visit Renesas Electronics Corporation
    2SK2225-80-E#T2 Renesas Electronics Corporation Nch Single Power MOSFET 1500V 2A 12000mOhm TO-3PFP Visit Renesas Electronics Corporation
    2SK1317-E Renesas Electronics Corporation Nch Single Power Mosfet 1500V 2.5A 12000Mohm To-3P Visit Renesas Electronics Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation

    SINGLE 1500V TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LT1817 transistor

    Abstract: LT1815 LT1815CS5 LT1815IS5 marking G28 G28 SOT-23 g28 SOT23 marking g31 sot23 1817I LTNQ
    Text: LT1815 LT1816/LT1817 Single/Dual/Quad 220MHz, 1500V/µs Operational Amplifiers with Programmable Supply Current U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 220MHz Gain-Bandwidth Product 1500V/µs Slew Rate 6.5mA Supply Current per Amplifier


    Original     		PDF LT1815 LT1816/LT1817 220MHz, 220MHz OT-23, 800nA LT1395/LT1396/LT1397 400MHz LT1806/LT1807 325MHz, LT1817 transistor LT1815 LT1815CS5 LT1815IS5 marking G28 G28 SOT-23 g28 SOT23 marking g31 sot23 1817I LTNQ

    LT1815

    Abstract: LT1815CS5 LT1815IS5 marking g31 sot23
    Text: LT1815 LT1816/LT1817 Single/Dual/Quad 220MHz, 1500V/µs Operational Amplifiers with Programmable Supply Current U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 220MHz Gain-Bandwidth Product 1500V/µs Slew Rate 6.5mA Supply Current per Amplifier


    Original     		PDF LT1815 LT1816/LT1817 220MHz, 220MHz OT-23 800nA LT1395/LT1396/LT1397 400MHz LT1806/LT1807 325MHz, LT1815 LT1815CS5 LT1815IS5 marking g31 sot23

    H12A TO8-12

    Abstract: Dual Comparators fet input LH0033CG LH0032 op amp H12A LH0033 LH0033C LH0033G
    Text: Fast Buffer CORPORATION LH0033 / LH0033C GENERAL DESCRIPTION FEATURES • Slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V/µs • Wide range single or dual supply operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100MHz


    Original     		PDF LH0033 LH0033C 100MHz 103ns 250mA 100mA) 150pF 300pF LH0033 H12A TO8-12 Dual Comparators fet input LH0033CG LH0032 op amp H12A LH0033C LH0033G

    LH0033

    Abstract: LH0033CG Calogic buffers H12A TO8-12 LM711 H12A LH0033C LH0033G LH0032
    Text: Fast Buffer LLC LH0033 / LH0033C GENERAL DESCRIPTION FEATURES • Slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V/µs • Wide range single or dual supply operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100MHz


    Original     		PDF LH0033 LH0033C 100MHz 103ns 250mA 100mA) 150pF 300pF LH0033 LH0033CG Calogic buffers H12A TO8-12 LM711 H12A LH0033C LH0033G LH0032

    LH0032

    Abstract: No abstract text available
    Text: Fast Buffer LLC LH0033 / LH0033C FEATURES GENERAL DESCRIPTION • Slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V/µs • Wide range single or dual supply operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100MHz


    Original     		PDF LH0033 LH0033C 500V/Â 100MHz 103ns 250mA 100mA 150pF 300pF LH0032

    LT1817 transistor

    Abstract: LT1815 LT1816 LT1817 pnp 1500v 8a
    Text: LT1815/LT1816/LT1817 Single/Dual/Quad 220MHz, 1500V/µs Operational Amplifiers with Programmable Supply Current DESCRIPTION FEATURES n n n n n n n n n n n n n n n 220MHz Gain-Bandwidth Product 1500V/ s Slew Rate 6.5mA Supply Current per Amplifier Programmable Current Option


    Original     		PDF LT1815/LT1816/LT1817 220MHz, 220MHz 500V/s 800nA OT-23 LT1395/LT1396/LT1397 400MHz 00V/s, LT1806/LT1807 LT1817 transistor LT1815 LT1816 LT1817 pnp 1500v 8a

    Untitled

    Abstract: No abstract text available
    Text: LT1815/LT1816/LT1817 Single/Dual/Quad 220MHz, 1500V/µs Operational Amplifiers with Programmable Supply Current DESCRIPTION FEATURES n n n n n n n n n n n n n n n 220MHz Gain-Bandwidth Product 1500V/ s Slew Rate 6.5mA Supply Current per Amplifier Programmable Current Option


    Original     		PDF LT1815/LT1816/LT1817 220MHz, 500V/Â 220MHz 800nA OT-23 LT1395/LT1396/LT1397 400MHz LT1806/LT1807

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF10N300C VCES = 3000V IC110 = 10A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBF10N300C IC110 10N300C

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B15N300C VCES = 3000V IC110 = 15A VCE sat  6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF MMIX1B15N300C IC110 15N300C

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBF15N300C IC110 15N300C

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B20N300C VCES = 3000V IC110 = 20A VCE sat  6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF MMIX1B20N300C IC110 20N300C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBF20N360 IC110 20N360 H7-B11)

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBF20N360 IC110 20N360 H7-B11)

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL20N300C VCES = 3000V IC110 = 20A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBL20N300C IC110 20N300C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C


    Original     		PDF IC110 IXBF42N300 100ms 42N300

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C


    Original     		PDF IXBF42N300 IC110 IC110 100ms 100ms 42N300

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N300HV VCES = 3000V IC110 = 42A VCE sat ≤ 3.0V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBT42N300HV IC110 O-268 100ms 42N300 1-09-12-A

    IXBT42N300HV

    Abstract: transistor 42A
    Text: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N300HV VCES = 3000V IC110 = 42A VCE sat ≤ 3.0V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBT42N300HV IC110 O-268 IC110 100ms 42N300 1-09-12-A IXBT42N300HV transistor 42A

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = 3000V IC90 = 28A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ VCGR TJ = 25°C to 150°C, RGE = 1M


    Original     		PDF IXBF28N300 100ms 28N300

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 VCES = 3000V IC90 = 14A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBF14N300 100ms 14N300

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 VCES = 3000V IC90 = 22A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBF22N300 100ms 22N300 3-10-14-A

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol IXBV22N300S Test Conditions VCES = 3000V IC110 = 22A VCE sat  2.7V PLUS220SMDHV Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M


    Original     		PDF IXBV22N300S IC110 PLUS220SMDHV 100ms 22N300 3-10-14-A

    LH0033

    Abstract: op amp automatic offset H12A LH0033C LH0033CG LH0033G LH0032
    Text: Fast Buffer calori« CO RPO RATIO N \J LH0033 GENERAL DESCRIPTION FEATURES • • • • • • • • Slew rate . 1500V/|is Wide range single or dual supply operation B a n d w id th . 100MHz


    OCR Scan     		PDF LH0033 100MHz 250mA 150pF 150pF -300pF 220S2 000fl2tà 1000pF LH0033 op amp automatic offset H12A LH0033C LH0033CG LH0033G LH0032

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5386 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV J 5 .5 ± 0 .5 HIGH SPEED SWITCHING APPLICATIONS • • • • i/i High Voltage : VCBO= 1500V


    OCR Scan     		PDF 2SC5386 95MAX