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    AN1001

    Abstract: Si6436DQ Si9936DY an1001 siliconix
    Text: AN1001 Siliconix LITE FOOTt The Next Step in SurfaceĆMount Power MOSFETs Wharton McDaniel and David Oldham When Siliconix introduced its LITTLE FOOTr MOSFETs, it was the first time that power MOSFETs had been offered in a true surfaceĆmount package, the


    Original     		PDF AN1001 AN1001 Si6436DQ Si9936DY an1001 siliconix

    AN1001

    Abstract: Si6436DQ Si9936DY si9936 640 1 TSSOP8
    Text: AN1001 Vishay Siliconix LITTLE FOOTR TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE


    Original     		PDF AN1001 MS-012 S-00164--Rev. 31-Jan-00 07-Jun-00 AN1001 Si6436DQ Si9936DY si9936 640 1 TSSOP8

    TSSOP-8 footprint

    Abstract: MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY
    Text: AN1001 Vishay Siliconix LITTLE FOOTR TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE


    Original     		PDF AN1001 12-Dec-03 TSSOP-8 footprint MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY

    power switching with IRFP450 schematic

    Abstract: POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN-1005 Power MOSFET Avalanche Design Guidelines TABLE OF CONTENTS Page Table of Figures. 2


    Original     		PDF AN-1005 06-Dec-11 power switching with IRFP450 schematic POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche

    fet vcr compatible

    Abstract: 2N5486 AN105 J111 PN4119A SST111 SST4119 SST5486 jfet J111 transistor jfet idss 10 ma vp -3
    Text: AN105 Siliconix FETs As VoltageĆControlled Resistors A voltageĆcontrolled resistor VCR may be defined as a threeĆterminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential applied to the third.


    Original     		PDF AN105 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible 2N5486 AN105 J111 PN4119A SST111 SST4119 SST5486 jfet J111 transistor jfet idss 10 ma vp -3

    Siliconix JFET

    Abstract: Siliconix AN102 AN102 "Siliconix" "JFET" 2N4338 2N4339 2N5484 2N5912 J201 an102 siliconix
    Text: AN102 Siliconix JFET Biasing Techniques Introduction Self bias also called source bias or automatic bias , which is a somewhat universal scheme particularly valuable for ac amplifiers. D Engineers who are not familiar with proper biasing methods often design FET amplifiers that are


    Original     		PDF AN102 2N4338/9 SST/J201 SST/2N5485 SST/J202 Siliconix JFET Siliconix AN102 AN102 "Siliconix" "JFET" 2N4338 2N4339 2N5484 2N5912 J201 an102 siliconix

    TSSOP-8 footprint

    Abstract: AN1001 Si6436DQ Si9936DY SI9936
    Text: AN1001 LITTLE FOOTt TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Siliconix introduced its LITTLE FOOTr MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC.


    Original     		PDF AN1001 01-Sep-93 TSSOP-8 footprint AN1001 Si6436DQ Si9936DY SI9936

    AN1001

    Abstract: TSSOP-8 footprint Si6436DQ Si9936DY
    Text: AN1001 LITTLE FOOTt TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Siliconix introduced its LITTLE FOOTr MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC.


    Original     		PDF AN1001 01-Sep-93 AN1001 TSSOP-8 footprint Si6436DQ Si9936DY

    9952

    Abstract: Siliconix JFET AN105 VCR4N VCR2N
    Text: VCR2N/4N/7N Siliconix JFET VoltageĆControlled Resistors Product Summary Part Number VGS off Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N -7 -25 60 VCR4N -7 -25 600 VCR7N -5 -25 8000 For applications information see AN105. Features Benefits Applications


    Original     		PDF AN105. P-37406--Rev. 9952 Siliconix JFET AN105 VCR4N VCR2N

    transistor 2n5088 equivalent

    Abstract: transistor fn 1016 2N5088 equivalent N CHANNEL jfet Low Noise Audio Amplifier 2N5088 SIMILAR 2n930 equivalent JFETs Junction FETs transistor j201 siliconix fet Siliconix "low noise jfet"
    Text: AN106 Siliconix LowĆNoise JFETs Ċ Superior Performance to Bipolars Introduction D Junction field effect transistors continue to outperform the best bipolar transistors on lowĆfrequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		PDF AN106 transistor 2n5088 equivalent transistor fn 1016 2N5088 equivalent N CHANNEL jfet Low Noise Audio Amplifier 2N5088 SIMILAR 2n930 equivalent JFETs Junction FETs transistor j201 siliconix fet Siliconix "low noise jfet"

    an104 siliconix

    Abstract: TO-226A U421 jfet Siliconix AN104 jfet spice model SST310 spice model SILICONIX 2N4391 2N4391 J111 J176
    Text: AN104 Siliconix SPICE Parameters for Select JFETs Ed Oxner Introduction The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET.


    Original     		PDF AN104 2N5116 SST176 an104 siliconix TO-226A U421 jfet Siliconix AN104 jfet spice model SST310 spice model SILICONIX 2N4391 2N4391 J111 J176

    siliconix - j201

    Abstract: j201 jfet 2N4392 jfet cascade SST4119 2N4341 AN103 J112 J202 SST112
    Text: AN103 Siliconix The FET ConstantĆCurrent Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constantĆcurrent source. An adjustableĆcurrent source Figure 1 may be built with a FET, a variable resistor,


    Original     		PDF AN103 SST112 2N4392 2N4393 SST/J113 2N4392, SST/J112 2N4393, SST/J113 siliconix - j201 j201 jfet 2N4392 jfet cascade SST4119 2N4341 AN103 J112 J202 SST112

    P-Channel Depletion Mode FET

    Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
    Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic


    Original     		PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion

    2N4416

    Abstract: 2N4416A AN104 SST4416 To206AF
    Text: 2N4416/2N4416A/SST4416 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 v6 -30 4.5 5 2N4416A -2.5 to -6 -35 4.5 5 SST4416 v6 -30 4.5 5 2N4416, For applications information see AN104, page 21.


    Original     		PDF 2N4416/2N4416A/SST4416 2N4416 2N4416A SST4416 2N4416, AN104, 2N4416/A, P-37408--Rev. 2N4416 2N4416A AN104 SST4416 To206AF

    A561 transistor

    Abstract: transistor a561 2N5911 2N5912 AN102 2N5912 jfet
    Text: 2N5911/5912 Siliconix Matched NĆChannel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5911 -1 to -5 -25 5 -1 10 2N5912 -1 to -5 -25 5 -1 15 2N5912, For applications information see AN102, page 6.


    Original     		PDF 2N5911/5912 2N5911 2N5912 2N5912, AN102, P-37407--Rev. A561 transistor transistor a561 2N5911 2N5912 AN102 2N5912 jfet

    AN102

    Abstract: SST440 SST441 JFET DUALS Siliconix JFET Duals SST4410
    Text: SST440/441 Siliconix Monolithic NĆChannel JFET Duals Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) SST440 -1 to -6 -25 4.5 -1 10 SST441 -1 to -6 -25 4.5 -1 20 SST441, For applications information see AN102, page 6.


    Original     		PDF SST440/441 SST440 SST441 SST441, AN102, P-37405--Rev. AN102 SST440 SST441 JFET DUALS Siliconix JFET Duals SST4410

    2N5114

    Abstract: 2N4856A 2N5115 2N5116 AN104
    Text: 2N5114/5115/5116 Siliconix PĆChannel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Max (ns) 2N5114 5 to 10 75 -10 16 2N5115 3 to 6 100 -10 30 2N5116 1 to 4 150 -10 42 2N5116, For applications information see AN104, page 21.


    Original     		PDF 2N5114/5115/5116 2N5114 2N5115 2N5116 2N5116, AN104, 2N5114 2N4856A 2N5115 2N5116 AN104

    J113 equivalent

    Abstract: J113 AN105 J111 J112 SST111 SST112 SST113 V31005
    Text: J/SST111 Series Siliconix NĆChannel JFETs J111 J112 J113 Product Summary SST111 SST112 SST113 Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 -3 to -10 30 5 4 J/SST112 -1 to -5 50 5 4 J/SST113 v-3 100 5 4 J/SST111, For applications information see AN105, page 22.


    Original     		PDF J/SST111 SST111 SST112 SST113 J/SST111 J/SST112 J/SST113 J/SST111, AN105, J113 equivalent J113 AN105 J111 J112 SST111 SST112 SST113 V31005

    VCR7N

    Abstract: AN105 Siliconix JFET
    Text: VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number VGS off Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N –7 –25 60 VCR4N –7 –25 600 VCR7N –5 –25 8000 FEATURES BENEFITS APPLICATIONS D Continuous Voltage-Controlled


    Original     		PDF S-04027--Rev. 04-Jun-01 VCR7N AN105 Siliconix JFET

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    CR160

    Abstract: CR180 CR200 CR220 CR240 CR270 CR300 CR330 CR360 CR390
    Text: CR160 Series Vishay Siliconix Current Regulator Diodes CR160 CR220 CR300 CR390 CR180 CR240 CR330 CR430 CR200 CR270 CR360 CR470 PRODUCT SUMMARY Part Number Typ IF mA Min POV (V) Part Number Typ IF (mA) Min POV (V) CR160 1.60 100 CR300 3.00 100 CR180 1.80


    Original     		PDF CR160 CR160 CR220 CR300 CR390 CR180 CR240 CR330 CR430 CR200 CR180 CR200 CR220 CR240 CR270 CR300 CR330 CR360 CR390

    This article

    Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
    Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left


    Original     		PDF namely988. AR346. AN1107. This article vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet

    VCR2N

    Abstract: jfet transistor for VCR AN105
    Text: VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number VGS off Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N −7 −25 60 VCR4N −7 −25 600 VCR7N −5 −25 8000 FEATURES BENEFITS APPLICATIONS D Continuous Voltage-Controlled


    Original     		PDF 18-Jul-08 VCR2N jfet transistor for VCR AN105

    Untitled

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 5.5 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 22 Qgs (nC)


    Original     		PDF IRF730A, SiHF730A AN1001) O-220 12-Mar-07