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    SILICON RF TRANSISTOR S PARAMETERS UP TO 4GHZ Search Results

    SILICON RF TRANSISTOR S PARAMETERS UP TO 4GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON RF TRANSISTOR S PARAMETERS UP TO 4GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX2430

    Abstract: MAX2430ISE JR060
    Text: 19-1093; Rev 0; 7/96 UAL MAN ET KIT E N H TIO ATA S LUA D EVA LOWS L FO Low-Voltage, Silicon RF Power Amplifier/Predriver _Features ♦ Operates Over the 800MHz to 1000MHz Frequency Range The MAX2430 is ideal as a driver amplifier for portable


    Original     		PDF 800MHz 1000MHz MAX2430 915MHz 16-pin 125mW 100mW MAX2430ISE JR060

    ACS 086

    Abstract: germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz
    Text: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF VPS05605 OT-343 -j100 Feb-09-2000 ACS 086 germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz

    Untitled

    Abstract: No abstract text available
    Text: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has


    Original     		PDF

    BFP620 acs

    Abstract: BFP620 s parameters 4ghz
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF BFP620 VPS05605 OT343 -j100 Aug-29-2001 BFP620 acs BFP620 s parameters 4ghz

    BFP405 ALs

    Abstract: BFP405
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3  For low current applications 4  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405 VPS05605 OT343 -j100 Aug-20-2001 BFP405 ALs BFP405

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    Infineon Technologies transistor 4 ghz

    Abstract: No abstract text available
    Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3  For low current applications  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding Gms = 23 dB at 1.8 GHz  Transition frequency fT = 25 GHz  Gold metallization for high reliability


    Original     		PDF VPS05605 OT-343 -j100 Nov-17-2000 Infineon Technologies transistor 4 ghz

    BFP420 application notes

    Abstract: BFP420 equivalent BFP420 INFINEON BFP420 (Ams) transistor bfp420 INFINEON BFP420 Ams
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers 4  For oscillators up to 10 GHz  Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420 VPS05605 OT343 45GHz -j100 Aug-20-2001 BFP420 application notes BFP420 equivalent BFP420 INFINEON BFP420 (Ams) transistor bfp420 INFINEON BFP420 Ams

    acs sot-343

    Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560
    Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF VPS05605 OT-343 -j100 Dec-22-2000 acs sot-343 spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560

    620 sot-343

    Abstract: acs sot-343
    Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF VPS05605 OT-343 -j100 Mar-01-2001 620 sot-343 acs sot-343

    VPS05605

    Abstract: BF 212 transistor TS1440
    Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3  For low current applications 4  For oscillators up to 12 GHz  Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF VPS05605 OT-343 -j100 Dec-13-1999 VPS05605 BF 212 transistor TS1440

    420 NPN Silicon RF Transistor

    Abstract: VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86
    Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers 4  For oscillators up to 10 GHz  Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF VPS05605 OT-343 45GHz -j100 Dec-13-1999 420 NPN Silicon RF Transistor VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers  For oscillators up to 10 GHz  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding Gms = 21 dB at 1.8 GHz  Transition frequency fT = 25 GHz  Gold metallization for high reliability


    Original     		PDF VPS05605 OT-343 45GHz -j100 Nov-17-2000

    R4S BFP640

    Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 VPS05605 OT343 Apr-21-2004 R4S BFP640 BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz

    BFP640 noise figure

    Abstract: s parameters 4ghz
    Text: BFP640 E/L6327 and E/L7764 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 E/L6327 E/L7764 L6327 L7764 VPS05605 BFP640 Oct-30-2003 BFP640 noise figure s parameters 4ghz

    transistor bfp420

    Abstract: INFINEON BFP420 Ams BFP420 equivalent BFP420 application notes S parameters of 4 GHz transistor
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers 4  For oscillators up to 10 GHz  Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420 VPS05605 OT343 transistor bfp420 INFINEON BFP420 Ams BFP420 equivalent BFP420 application notes S parameters of 4 GHz transistor

    R4S BFP640

    Abstract: BFP640 transistor ph 45 v marking r4s
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 VPS05605 OT343 Aug-16-2004 R4S BFP640 BFP640 transistor ph 45 v marking r4s

    siemens rs 1003

    Abstract: TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440
    Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability


    Original     		PDF VPS05605 Q62702-F1592 OT-343 -j100 Sep-09-1998 siemens rs 1003 TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440

    4GHZ TRANSISTOR

    Abstract: R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 OT343 4GHZ TRANSISTOR R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor

    420 NPN Silicon RF Transistor

    Abstract: transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor
    Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 • For high gain low noise amplifiers 4 • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability


    Original     		PDF VPS05605 Q62702-F1591 OT-343 45GHz -j100 Jul-14-1998 420 NPN Silicon RF Transistor transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor

    Untitled

    Abstract: No abstract text available
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3  For low current applications 4  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405 VPS05605 OT343

    BFP640E6327

    Abstract: BFP640 noise figure bfp640e R4S BFP640
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 OT343 726-BFP640E6327 E6327 BFP640E6327 BFP640 noise figure bfp640e R4S BFP640

    Untitled

    Abstract: No abstract text available
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640F BFP640may