NE5520379A
Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5520379A
NE5520379A
NE5520379A-T1
NE5520379A-T1A
VP215
ldmos nec
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5520379A
NE5520379A
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NE552R479A-T1A
Abstract: VP215 GSM1900 NE552R479A NE552R479A-T1 ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our
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NE552R479A
NE552R479A
NE552R479A-T1A
VP215
GSM1900
NE552R479A-T1
ldmos nec
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DCS1800
Abstract: NE5520279A NE5520279A-T1 NE5520279A-T1A VP215 ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology
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NE5520279A
NE5520279A
DCS1800
NE5520279A-T1
NE5520279A-T1A
VP215
ldmos nec
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NE552R679A
Abstract: NE552R679A-T1 NE552R679A-T1A VP215 ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2
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NE552R679A
NE552R679A
NE552R679A-T1
NE552R679A-T1A
VP215
ldmos nec
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7530D
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology
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NE5520279A
NE5520279A
DCS1800
7530D
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ne552r
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our
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NE552R479A
NE552R479A
ne552r
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2
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NE552R679A
NE552R679A
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NE5500479A
Abstract: NE5500479A-T1 VP215 ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm WSi gate laterally diffused
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NE5500479A
NE5500479A
NE5500479A-T1
VP215
ldmos nec
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NE5510279A
Abstract: NE5510279A-T1 VP215 PU10121EJ03V0DS
Text: DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm WSi gate
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NE5510279A
NE5510279A
NE5510279A-T1
VP215
PU10121EJ03V0DS
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NE5511279A
Abstract: NE5511279A-T1 NE5511279A-T1A VP215 NEC MARKING surface ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and
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NE5511279A
NE5511279A
PU10322EJ01V0DS
NE5511279A-T1
NE5511279A-T1A
VP215
NEC MARKING surface
ldmos nec
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm WSi gate lateral-diffusion
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NE5500479A
NE5500479A
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Untitled
Abstract: No abstract text available
Text: 1N4728A to 1N4764A VISHAY Vishay Semiconductors Silicon Power Zener Diodes Features • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with high power rating. • Standard Zener voltage tolerance is ± 5 %. Applications
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1N4728A
1N4764A
DO-41
25k/box
D-74025
16-Apr-04
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NE5500179A
Abstract: NE5500179A-T1 VP215
Text: DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm
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NE5500179A
NE5500179A
NE5500179A-T1
VP215
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NE5510279A-T1
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm WSi gate lateraldiffusion MOS FET and housed in a surface mount package. The device can deliver 33.0 dBm output power with
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NE5510279A
NE5510279A
NE5510279A-T1
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1N474
Abstract: 1N4756A
Text: 1N4728A to 1N4764A VISHAY Vishay Semiconductors Silicon Power Zener Diodes Features • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with high power rating. 949369 • Standard Zener voltage tolerance suffix "A" for ± 5 % tolerance. Other Zener voltages and
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1N4728A
1N4764A
DO-41
25k/box
25k/box
D-74025
22-Jul-03
1N474
1N4756A
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Untitled
Abstract: No abstract text available
Text: 1N4728A to 1N4764A VISHAY Vishay Semiconductors Silicon Power Zener Diodes \ Features • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with high power rating. • Standard Zener voltage tolerance suffix "A" for ± 5 % tolerance. Other Zener voltages and
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1N4728A
1N4764A
DO-41
25k/box
D-74025
26-Mar-03
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Untitled
Abstract: No abstract text available
Text: 1N4728A to 1N4764A VISHAY Vishay Semiconductors Silicon Power Zener Diodes Features • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with high power rating. • Standard Zener voltage tolerance suffix "A" for ± 5 % tolerance. Other Zener voltages and
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1N4728A
1N4764A
DO-41
25k/box
25k/box
D-74025
20-Oct-03
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1N4728A
Abstract: 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4764A
Text: 1N4728A to 1N4764A VISHAY Vishay Semiconductors Silicon Power Zener Diodes \ Features • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with high power rating. • Standard Zener voltage tolerance suffix "A" for ± 5 % tolerance. Other Zener voltages and
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1N4728A
1N4764A
DO-41
25k/box
D-74025
26-Mar-03
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4764A
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NEC 2501
Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features
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2SC4536
2SC4536
OT-89)
PU10338EJ01V0DS
NEC 2501
2SC4536-T1
ic nec 2501
2501 NEC
nec RF package SOT89
qs marking sot-89
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liner integrated curcuit
Abstract: HS350 ATT10
Text: DATA SHEET Si ANALOG INTEGRATED CIRCUIT µPC8218T5A SILICON RF POWER AMPLIFIER IC FOR 1.9 GHz PHS DESCRIPTION The µPC8218T5A is a silicon monolithic integrated circuit designed for use as power amplifier 1.9 GHz PHS. This IC consists of three stage amplifiers as driver stage and final stage of power amplifier.
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PC8218T5A
PC8218T5A
16-pin
liner integrated curcuit
HS350
ATT10
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D251K
Abstract: D251N
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 251 N 8,4 8,4 E-Cu-Seil 25mm² E-CE-Rope 25 mm ² E-Cu-Seil 25mm² E-Cu-Rope 25 mm² Siliconschlauch Silicon tube Siliconschlauch Silicon tube
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D251N
Abstract: Ifavm 250 A eupec rectifier D251K 251-N
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 251 N 8,4 8,4 E-Cu-Seil 25mm² E-CE-Rope 25 mm ² E-Cu-Seil 25mm² E-Cu-Rope 25 mm² Siliconschlauch Silicon tube Siliconschlauch Silicon tube
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 251 N 8,4 8,4 E-Cu-Seil 25mm² E-CE-Rope 25 mm ² E-Cu-Seil 25mm² E-Cu-Rope 25 mm² Siliconschlauch Silicon tube Siliconschlauch Silicon tube
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