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    SILICON POWER 2GB Search Results

    SILICON POWER 2GB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    SILICON POWER 2GB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    silicon power 2GB

    Abstract: 63BF CT54 BDT63CF D 711 N 60 T D04-3 bdt63b npn BDT63F 63CF BDT62AF
    Text: BDT63F; BDT63AF VBDT63BF; BDT63CF j SbE T> PHILIPS INTERNATIONAL m 711002b 00432bb • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SO T186 envelope w ith an electrically insulated mounting base. The devices are designed fo r audio output stages and general am plifier and switching applications.


    OCR Scan     		BDT63F; BDT63AF yBDT63BF; BDT63CF 0043Sbb OT186 BDT62F, BDT62AF, BDT62BF BDT62CF. silicon power 2GB 63BF CT54 BDT63CF D 711 N 60 T D04-3 bdt63b npn BDT63F 63CF BDT62AF PDF

    silicon power 2GB

    Abstract: DG432
    Text: BDT63F; BDT63AF ^DTBSBF; BDT63CF 1 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b Q 0 4 3 2 b b «îM *1 H P H I N T -3 3 -2 ^ SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting


    OCR Scan     		BDT63F; BDT63AF BDT63CF OT186 T62BF T62CF. BDT63F OT186. BDT63AF silicon power 2GB DG432 PDF

    silicon power 8GB

    Abstract: silicon power 2GB silicon power 1GB silicon power 4GB TDK GBDriver 8GB Nand flash hard disk spindle
    Text: 1/1 TDK Silicon Disk GBDisk Series Conformity to RoHS Directive Silicon Disks for Industrial Applications/Embedded Systems 1GB, 2GB, 4GB, 8GB With the increased capacity and price reductions now seen in the NAND-type flash memory, the silicon disk is a rapidly rising contender


    Original     		150mA 1500G 2002/95/EC, silicon power 8GB silicon power 2GB silicon power 1GB silicon power 4GB TDK GBDriver 8GB Nand flash hard disk spindle PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46DR16128A PRELIMINARY INFORMATION OCTOBER 2013 2Gb x16 DDR2 SDRAM FEATURES •              Clock frequency up to 333MHz 8 internal banks for concurrent operation 4-bit prefetch architecture Programmable CAS Latency: 3, 4, 5, 6 and 7


    Original     		IS43/46DR16128A 333MHz cycles/64 128Mb 84-ball IS46DR16128A DDR2-667D PDF

    IS43DR16128A

    Abstract: No abstract text available
    Text: IS43/46DR16128A PRELIMINARY INFORMATION NOVEMBER 2013 2Gb x16 DDR2 SDRAM FEATURES •              Clock frequency up to 333MHz 8 internal banks for concurrent operation 4-bit prefetch architecture Programmable CAS Latency: 3, 4, 5, 6 and 7


    Original     		IS43/46DR16128A 333MHz cycles/64 128Mb 84-ball IS46DR16128A DDR2-667D IS43DR16128A PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46DR16128 PRELIMINARY INFORMATION APRIL 2011 2Gb x16 DDR2 SDRAM FEATURES •                Clock frequency up to 400MHz 8 internal banks for concurrent operation 4-bit prefetch architecture


    Original     		IS43/46DR16128 400MHz cycles/64 DDR2667D IS43DR161283DBLI IS43DR161283DBI 128Mb 84ball PDF

    IS43DR16128A

    Abstract: DDR2 SDRAM
    Text: IS43/46DR16128A NOVEMBER 2013 2Gb x16 DDR2 SDRAM FEATURES •              Clock frequency up to 333MHz 8 internal banks for concurrent operation 4-bit prefetch architecture Programmable CAS Latency: 3, 4, 5, 6 and 7


    Original     		IS43/46DR16128A 333MHz cycles/64 Dat16128A-3DBLA1 128Mb 84-ball IS46DR16128A DDR2-667D IS43DR16128A DDR2 SDRAM PDF

    IS46DR161283DBLA2

    Abstract: IS46DR16128-3DBLA2 IS43DR16128-3DBLI
    Text: IS43/46DR16128 2Gb x16 DDR2 SDRAM DECEMBER 2011 FEATURES •                Clock frequency up to 400MHz 8 internal banks for concurrent operation 4-bit prefetch architecture Programmable CAS Latency: 3, 4, 5, 6 and 7


    Original     		IS43/46DR16128 400MHz cycles/64 DDR2667D IS46DR161283DBLA1 128Mb 84ball IS46DR161283DBLA2 IS46DR161283DBLA2 IS46DR16128-3DBLA2 IS43DR16128-3DBLI PDF

    IS43TR82560A

    Abstract: DDR3L-1866
    Text: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION NOVEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V 


    Original     		IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 cycles/64 cycles/32 IS46TR82560AL -187FBLA2 IS43TR82560A DDR3L-1866 PDF

    TDA 0200

    Abstract: No abstract text available
    Text: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION NOVEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V 


    Original     		IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 cycles/64 cycles/32 IS46TR82560AL -15HBLA2 TDA 0200 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION JULY 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V  


    Original     		IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 cycles/64 cycles/32 1333MT/s IS46TR82560BL PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM JULY 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       


    Original     		IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 cycles/64 cycles/32 1333MT/s IS46TR82560AL PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM AUGUST 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       


    Original     		IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 cycles/64 cycles/32 1333MT/s IS46TR82560AL PDF

    IS43DR16128

    Abstract: No abstract text available
    Text: IS43/46DR16128 PRELIMINARY INFORMATION 2Gb x16 DDR2 SDRAM JUNE 2011 FEATURES • • • • • • • • • • • • • • • • Clock frequency up to 400MHz 8 internal banks for concurrent operation 4-bit prefetch architecture Programmable CAS Latency: 3, 4, 5, 6 and 7


    Original     		IS43/46DR16128 400MHz cycles/64 DDR2-667D IS46DR16128-3DBLA1 128Mb 84-ball IS46DR16128-3DBLA2 IS43DR16128 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 2Gb DDR3 SDRAM PRELIMINARY INFORMATION OCTOBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V


    Original     		IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 cycles/64 cycles/32 1333MT/s IS46TR82560BL PDF

    IS43DR16128

    Abstract: IS46DR16128 IS43DR16128-3DBL IS43DR16128-3DBI
    Text: IS43/46DR16128 SEPTEMBER 2012 2Gb x16 DDR2 SDRAM FEATURES • • • • • • • • • • • • • • • Clock frequency up to 333MHz (667 MT/s Data Rate) 8 internal banks for concurrent operation 4-bit prefetch architecture Programmable CAS Latency: 3, 4, 5, 6 and 7


    Original     		IS43/46DR16128 333MHz cycles/64 option3DR16128-3DBI 128Mb 84-ball DDR2-667D IS46DR16128-3DBLA1 IS43DR16128 IS46DR16128 IS43DR16128-3DBL IS43DR16128-3DBI PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V      


    Original     		IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 cycles/64 cycles/32 1333MT/s IS46TR82560AL PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM MAY 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       


    Original     		IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 cycles/64 cycles/32 1333MT/s IS46TR82560AL PDF

    78 ball fbga

    Abstract: 128Mx16 DDR3 DRAM 2GB 128Mx16 96BALL FBGA 78-Ball 256Mx8 96-ball FBGA 96-BALL 96-ball FBGA ddr3 DDR3-1866L 78ball FBGA
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       


    Original     		IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 Ref82560A/AL 78-ball 78 ball fbga DDR3 DRAM 2GB 128Mx16 96BALL FBGA 256Mx8 96-ball FBGA 96-BALL 96-ball FBGA ddr3 DDR3-1866L 78ball FBGA PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46DR16128 2Gb x16 DDR2 SDRAM SEPTEMBER 2012 FEATURES • • • • • • • • • • • • • • • Clock frequency up to 333MHz (667 MT/s Data Rate) 8 internal banks for concurrent operation 4-bit prefetch architecture Programmable CAS Latency: 3, 4, 5, 6 and 7


    Original     		IS43/46DR16128 333MHz cycles/64 DDR2-667D IS46DR16128-3DBLA1 128Mb 84-ball IS46DR16128-3DBLA2 PDF

    IS46TR

    Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        


    Original     		IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 60A/AL 78-ball IS46TR IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM" PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 2Gb DDR3 SDRAM AUGUST 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V


    Original     		IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 1333MT/s IS46TR82560BL -15HBLA2 78-ball PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 2Gb DDR3 SDRAM JUNE 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V Backward compatible to 1.5V


    Original     		IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 1333MT/s IS46TR82560BL -15HBLA2 78-ball PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM SEPTEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V


    Original     		IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 1333MT/s IS46TR82560AL -15HBLA2 78-ball PDF