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    SILICON PNP POWER TRANSISTOR B 869 Search Results

    SILICON PNP POWER TRANSISTOR B 869 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON PNP POWER TRANSISTOR B 869 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


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    PDF 1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


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    PDF 1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046

    S869T

    Abstract: S869TR 1s869
    Text: S 869 T / S 869 T R TELEFUNKEN Semiconductors Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features D High blocking voltages D Transition frequency: fT = 1 GHz 1 2 1 3 3 2 94 9280 S869T Marking: 869T Plastic case SOT 23


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    PDF S869T S869TR D-74025 1s869

    s869t

    Abstract: marking A1 TRANSISTOR S869TR Telefunken
    Text: S869T/S869TR Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features D High blocking voltages D Transition frequency: fT = 1 GHz 1 2 1 3 3 94 9280 2 95 10527 S869T Marking: 869 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


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    PDF S869T/S869TR S869T S869TR D-74025 24-Apr-96 marking A1 TRANSISTOR Telefunken

    s869t

    Abstract: S869TR CASESOT-23 marking A1 TRANSISTOR Telefunken
    Text: S869T/S869TR Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features D High blocking voltages D Transition frequency: fT = 1 GHz 1 2 1 3 3 94 9280 S869T Marking: 869 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


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    PDF S869T/S869TR S869T S869TR D-74025 24-Apr-96 CASESOT-23 marking A1 TRANSISTOR Telefunken

    2SA1869

    Abstract: 2SC4935
    Text: TO SH IBA 2SA1869 2 S A 1 869 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 10 ± 0 .3 Good Linearity of hEE Complementary to 2SC4935 ^ 3 .2 ± 0.2 CO 1.1 SYMBOL VCBO VCEO Ve b o ic :B PC Tj Tstg


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    PDF 2SA1869 2SC4935 SC-67 2SA1869 2SC4935

    2SA1869

    Abstract: 2SC4935
    Text: 2SA1869 TO SH IBA 2 S A 1 869 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 10 ± 0 .3 Good Linearity of hEE Complementary to 2SC4935 ^ 3 .2 ± 0.2 CO 1.1 SYMBOL VCBO VCEO Ve b o ic :B pc Tj Tstg


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    PDF 2SA1869 2SC4935 SC-67 2SA1869 2SC4935

    transistor BD

    Abstract: TRANSISTOR bd 330
    Text: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly


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    PDF fl23SbDS 330/BD Q62702-D395 Q62702-D401 Q62902-B63 235bQS GQ04351 BD330 transistor BD TRANSISTOR bd 330

    Q62702-D401

    Abstract: TRANSISTOR bd 330 b0330 A-04 Q62702-D395 Q62902-B63 spring washer 330 transistor transistor BD 329 4l transistor
    Text: 2SC J> m ÔSBSbQS GGQHBMÌ T H S I E â PNP Silicon Planar Transistor _ BD 330 25C 04-349 D 7~“ 3 W / SIEMENS AKTIENGESELLSCHAF BO 3 3 0 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly


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    PDF fl23SbDS Q62702-D395 330/BD Q62702-D401 Q62902-B63 200ps[ 23SbOS Q0043S1 Q62702-D401 TRANSISTOR bd 330 b0330 A-04 Q62702-D395 Q62902-B63 spring washer 330 transistor transistor BD 329 4l transistor

    darlington bd 876

    Abstract: transistor bd 126 BD876 BD880 relay 876 BD transistor bd880 siemens BD 35 transistor TRANSISTOR BD 137 darlington bd
    Text: esc D a i fi23St.0S 0 0 0 4 4 2 3 7 H S IE 6 ^ PNP Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF h23 T-33-31 * BD 876 BD 878 BD 880 ° BD 876, BD 878, and BD 880 are epitaxial PNP silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . These darlington transistors


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    PDF A23Sfc QQ044S3 T-33-31 Q62702-D908 Q62702-D907 Q62702-D906 Q62902-B63 Q62902-B62 125min darlington bd 876 transistor bd 126 BD876 BD880 relay 876 BD transistor bd880 siemens BD 35 transistor TRANSISTOR BD 137 darlington bd

    BF470

    Abstract: F506 BF472 Q62702-F498 Q62702-F506 Q62902-B62 Q62902-B63 CBC 548 transistor 2sc 548
    Text: - 3 1 - 2 3 ISIEû ESC D • ô23SbOS QQQ45G2 PNP Silicon Planar Transistors — SIEMENS AKTIENÛESELLSCHAFi02 BF 470 BF 472 °- BF 4 70 and BF 472 are epitaxial PNP silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector is conductively connected to the metallic


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    PDF 235bOS ESELLSCHAFi02 Q62702-F498 Q62702-F506 Q62902-B63 Q62902-B62 23SbQS QG04504 BF470 F506 BF472 Q62702-F498 Q62702-F506 Q62902-B62 Q62902-B63 CBC 548 transistor 2sc 548

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    sot-89 Marking LB

    Abstract: SOT89 MARKING CODE sot marking code LB
    Text: Central” CXT7090L Semiconductor Corp. SURFACE MOUNT l o w v ce SAT PNP SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT7090L is a Low V c E { S A T ) PNP Transistor in a Power SOT-89 surface mount package, designed for DC-DC converters for mobile systems and LAN


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    PDF CXT7090L OT-89 50MHz CP709 14-November CXT7090L OT-89 sot-89 Marking LB SOT89 MARKING CODE sot marking code LB

    ce SOT223

    Abstract: SILICON PNP POWER TRANSISTOR b 869
    Text: Central CZT7090L Semiconductor Corp. SURFACE MOUNT LOW VCE SAT PNP SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT7090L is a Low Vq E(sa T) pnf> Transistor in a space sav­ ing Power SOT-223 surface mount package, designed for DC-DC converters for mobile sys­


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    PDF CZT7090L OT-223 CP709 OT-223 14-November ce SOT223 SILICON PNP POWER TRANSISTOR b 869

    SILICON PNP POWER TRANSISTOR b 869

    Abstract: S869T Sot-23R S869TR
    Text: Tem ic S 869 T / S 869 T R TELEFUNKEN Semiconductors Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features • High blocking voltages • Transition frequency: f j = 1 GHz 95 10527 S869T Marking: 869T Plastic case SOT 23


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    PDF S869T S869TR SILICON PNP POWER TRANSISTOR b 869 Sot-23R

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    transistor n53

    Abstract: BC869-10
    Text: bbS3^31 00244*13 N AUER PHILIPS/DISCRETE • APX BC869 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature envelope, intended for low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio output


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    PDF BC869 BC868/BC869 h\n53 transistor n53 BC869-10

    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


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    PDF AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U

    Untitled

    Abstract: No abstract text available
    Text: 2SA1869 TOSHIBA 2 S A 1 869 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm Î.2 ± 0.2 10 ±0.3 Good Linearity of hpg Complementary to 2SC4935 2.710.2 m 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SA1869 2SC4935

    transistor k 975

    Abstract: c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875
    Text: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . These darlington transistors


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    PDF 023SbOS T-33-29 Q62702-D902 Q62702-D903 Q62702-D904 Q62902-B63 Q62902-B62 25imi BD977 transistor k 975 c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875

    transistor d325

    Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
    Text: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector


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    PDF 053SbOS 00043L3 433/BD 435/BD 437/BD 439/BD 441/BD fl23Sfc ---0436r BD433. transistor d325 TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285