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    SILICON NPN DARLINGTON TRANSISTOR TIP110 Search Results

    SILICON NPN DARLINGTON TRANSISTOR TIP110 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON NPN DARLINGTON TRANSISTOR TIP110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD418

    Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,


    Original     		PDF MJ10000 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SD418 TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023

    MJ2955 replacement

    Abstract: diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS The BUT33 Darlington transistor is designed for high–voltage, high–speed, power


    Original     		PDF BUT33 BUT33 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ2955 replacement diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P

    BUT34 equivalent

    Abstract: BU323A equivalent 2N3055 BU108 2SA1046 BUV22 equivalent TIP34C equivalent bc 574 transistor BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS The BUT34 Darlington transistor is designed for high–voltage, high–speed, power


    Original     		PDF BUT34 BUT34 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUT34 equivalent BU323A equivalent 2N3055 BU108 2SA1046 BUV22 equivalent TIP34C equivalent bc 574 transistor BU326 BU100

    D45H11 equivalent replacement

    Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS


    Original     		PDF MJ10009 Volt32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D45H11 equivalent replacement 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100

    MJ3001 equivalent

    Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10005*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS


    Original     		PDF MJ10005 MJ10005* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ3001 equivalent bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000

    automotive ignition tip162

    Abstract: 2sc331 2N6556 BU108 2SA648 MJE13009 2SD1815 "cross reference" FT47 MJ1000 mj295
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.


    Original     		PDF MJ10012 MJH10012 MJH10012 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A automotive ignition tip162 2sc331 2N6556 BU108 2SA648 MJE13009 2SD1815 "cross reference" FT47 MJ1000 mj295

    automotive ignition tip162

    Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.


    Original     		PDF BU323A BU323A 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B automotive ignition tip162 BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326

    BU108

    Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:


    Original     		PDF BU522B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773

    Untitled

    Abstract: No abstract text available
    Text: TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage


    Original     		PDF TIP110/TIP111/TIP112 TIP115/116/117 O-220 TIP110 TIP111 TIP112 TIP110/TIP111/TIP112

    TIP112

    Abstract: TIP110 TIP111 NPN Transistor VCEO 80V 100V TIP110 transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON TIP112 transistor NPN Transistor VCEO 80V 100V DC Current gain 100 Silicon NPN Darlington transistor TIP110
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Complementary to TIP115/116/117


    Original     		PDF TIP110/111/112 O-220 TIP115/116/117 TIP111 TIP112 TIP110 TIP112 TIP110 TIP111 NPN Transistor VCEO 80V 100V TIP110 transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON TIP112 transistor NPN Transistor VCEO 80V 100V DC Current gain 100 Silicon NPN Darlington transistor TIP110

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP115/116/117


    Original     		PDF TIP110/111/112 O-220 TIP115/116/117 TIP110 TIP111 TIP112 15oduct

    TIP110

    Abstract: TIP112 TIP111 TIP110 equivalent TIP110 transistor TIP112 transistor NPN Transistor VCEO 80V 100V TIP NPN 112 transistor tip110 transistor tip111
    Text: TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage


    Original     		PDF TIP110/TIP111/TIP112 TIP115/116/117 O-220 TIP110 TIP111 TIP112 TIP110/TIP111/TIP112 TIP110 TIP112 TIP111 TIP110 equivalent TIP110 transistor TIP112 transistor NPN Transistor VCEO 80V 100V TIP NPN 112 transistor tip110 transistor tip111

    TIP110 equivalent

    Abstract: No abstract text available
    Text: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use TO-220


    Original     		PDF TIP110/111/112 TIP115/116/117 O-220 TIP110 TIP111 TIP112 TIP110 equivalent

    TIP117

    Abstract: TIP116 TIP115 TIP-115 NPN Transistor TO220 VCEO 80V 100V PNP NPN Transistor VCEO 80V 100V Ic 2A tip117 TRANSISTOR equivalent NPN Transistor VCEO 80V 100V DARLINGTON 2A 80v complementary transistor tip115 transistor
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, IC= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Complementary to TIP110/111/112


    Original     		PDF TIP115/116/117 O-220 TIP110/111/112 TIP116 TIP117 TIP115 -100V, TIP117 TIP116 TIP115 TIP-115 NPN Transistor TO220 VCEO 80V 100V PNP NPN Transistor VCEO 80V 100V Ic 2A tip117 TRANSISTOR equivalent NPN Transistor VCEO 80V 100V DARLINGTON 2A 80v complementary transistor tip115 transistor

    pin diagram of ic 4066

    Abstract: 10 amp pnp darlington power transistors 10 amp npn darlington power transistors with low saturation voltage TIP110 TIP115 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR 300 W npn darlington power transistors 5 amp npn darlington power transistors
    Text: TIP110, TIP115 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. • Collector-emitter sustaining voltage-VCEO sus = 60V (Minimum) - TIP110, TIP115. • Collector-emitter saturation voltage-VCE (sat) = 2.5V (Maximum) at IC = 2.0A.


    Original     		PDF TIP110, TIP115 TIP115. pin diagram of ic 4066 10 amp pnp darlington power transistors 10 amp npn darlington power transistors with low saturation voltage TIP110 TIP115 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR 300 W npn darlington power transistors 5 amp npn darlington power transistors

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hfE=1000 @ V ce= 4V, lc = 1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -220 Complementary to TIP115/116/117


    OCR Scan     		PDF TIP110/111/112 TIP115/116/117 TIP110 TIP111 TIP112 GG2SS65

    TIP112

    Abstract: transistor tip111
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Complementary to TIP115/116/117


    OCR Scan     		PDF TIP110/111/112 TIP115/116/117 TIP110 TIP111 TIP112 TIP112 transistor tip111

    c 111 transistor

    Abstract: 110T
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V ce = 4V, lc = 1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Com plem entary to TIP115/116/117


    OCR Scan     		PDF TIP110/111/112 TIP115/116/117 O-220 c 111 transistor 110T

    TIP110

    Abstract: 2A 80v complementary transistor TIP110 transistor TIP11 TIP111 TIP112 lc 112
    Text: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117


    OCR Scan     		PDF TIP110/111/112 TIP115/116/117 O-220 TIP110 TIP111 TIP112 -TIP11 2A 80v complementary transistor TIP110 transistor TIP11 TIP111 TIP112 lc 112

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE =1000 @ V ce = 4V, I c =1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Com plem ent to TIP115/116/117


    OCR Scan     		PDF TIP110/111/112 TIP115/116/117 O-220

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117


    OCR Scan     		PDF TIP110/111/112 TIP110

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117


    OCR Scan     		PDF TIP110/111/112 TIP110

    T1P110

    Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
    Text: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER


    OCR Scan     		PDF TIP105/106/107 000772a TIP100/101/102 TIP105 TIP106 TIP107 T1P105 TIP115: T1P110 transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102