Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SILICON N CHANNEL IGBT HIGH SPEED Search Results

    SILICON N CHANNEL IGBT HIGH SPEED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    SILICON N CHANNEL IGBT HIGH SPEED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBN1200E25C

    Abstract: mbn1200e25c igbt
    Text: IGBT MODULE Spec.No.IGBT-SP-05023 R0 MBN1200E25C Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High thermal fatigue durability. delta Tc=70℃, N>30,000cycles ∗ Low noise due to ultra soft fast recovery diode. ∗ High speed, low loss IGBT module.


    Original     		PDF IGBT-SP-05023 MBN1200E25C 000cycles) MBN1200E25C mbn1200e25c igbt

    fin heat sink igbt

    Abstract: diode chopper MBL1200E17D
    Text: Spec.No.IGBT-SP-03013 R2 IGBT MODULE MBL1200E17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High thermal fatigue durability. delta Tc=70℃,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode


    Original     		PDF IGBT-SP-03013 MBL1200E17D 000cycles) 120mA, 100kHz, 120nF 125oC fin heat sink igbt diode chopper MBL1200E17D

    MBN400C20

    Abstract: ultra low forward voltage diode
    Text: IGBT MODULE MBN400C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module.


    Original     		PDF MBN400C20 000cycles) MBN400C20 ultra low forward voltage diode

    MBL800E33D

    Abstract: No abstract text available
    Text: Spec.No.IGBT-SP-03009 R2 P1/5 IGBT MODULE MBL800E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High thermal fatigue durability.(delta Tc=70 ,N>30,000cycles) ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode


    Original     		PDF IGBT-SP-03009 MBL800E33D 000cycles) MBL800E33D

    Y11W

    Abstract: MBL1200E17D
    Text: IGBT MODULE MBL1200E17D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High thermal fatigue durability. delta Tc=70 ,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).


    Original     		PDF MBL1200E17D 000cycles) Y11W MBL1200E17D

    Untitled

    Abstract: No abstract text available
    Text: Spec.No.IGBT-SP-10011-R3 P1/4 6in1 IGBT Module MBB600TV6A PRELIMINARY SPECIFICATION Silicon N-channel IGBT 1. FEATURES * High speed, low loss IGBT module. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module. 2. ABSOLUTE MAXIMUM RATINGS (Tc=25oC )


    Original     		PDF IGBT-SP-10011-R3 MBB600TV6A

    Untitled

    Abstract: No abstract text available
    Text: Spec.No.IGBT-SP-10009-R3 P1/3 6in1 IGBT Module MBB350TV6 PRELIMINARY SPECIFICATION Silicon N-channel IGBT 1. FEATURES * High speed, low loss IGBT module. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module. 2. ABSOLUTE MAXIMUM RATINGS (Tc=25oC )


    Original     		PDF IGBT-SP-10009-R3 MBB350TV6

    mbn400c20

    Abstract: No abstract text available
    Text: IGBT MODU ODULE MBN400C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module.


    Original     		PDF MBN400C20 000cycles) 400mA 100KHz 150nH 150nH, PDE-N400C20-0 mbn400c20

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-05023 R1 MBN1200E25C Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70 , N>30,000cycles ∗ Low noise due to ultra soft fast recovery diode. ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input


    Original     		PDF IGBT-SP-05023 MBN1200E25C 000cycles)

    MBN1200D33A

    Abstract: No abstract text available
    Text: IGBT MODULE MBN1200D33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling 6-M8 diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module.


    Original     		PDF MBN1200D33A 000cycles) MBN1200D33A

    GT60M303

    Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		PDF GT60M303 GT60M303 GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-03013 R7 P1 MBL1200E17D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70K , N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).


    Original     		PDF IGBT-SP-03013 MBL1200E17D 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-03009 R3 MBL800E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).


    Original     		PDF IGBT-SP-03009 MBL800E33D 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-06008 R5 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC, N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).


    Original     		PDF IGBT-SP-06008 MBL400E33D 000cycles)

    GT60M303 application

    Abstract: GT60M303 circuit igbt failure rate
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.


    Original     		PDF GT60M303 GT60M303 application GT60M303 circuit igbt failure rate

    06008R5

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-06008 R5 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC, N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).


    Original     		PDF IGBT-SP-06008 MBL400E33D 000cycles) 06008R5

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-03009 R3 MBL800E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).


    Original     		PDF IGBT-SP-03009 MBL800E33D 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-03013 R7 P1 MBL1200E17D Silicon N-channel IGBT FEATURES  High thermal fatigue durability. delta Tc=70K , N>30,000cycles  High speed, low loss IGBT module.  Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).


    Original     		PDF IGBT-SP-03013 MBL1200E17D 000cycles) 200mission

    GT60M303 application

    Abstract: GT60M303 gt60m303 application notes
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25 s TYP.


    Original     		PDF GT60M303 GT60M303 application GT60M303 gt60m303 application notes

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-02007 R8 MBN2400E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC) ∗ High thermal fatigue durability. (∆Tc=70K, N>30,000cycles)


    Original     		PDF IGBT-SP-02007 MBN2400E17D 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-02007 R8 MBN2400E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC) ∗ High thermal fatigue durability. (∆Tc=70K, N>30,000cycles)


    Original     		PDF IGBT-SP-02007 MBN2400E17D 000cycles)

    MG150J7KS50

    Abstract: No abstract text available
    Text: MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT :


    Original     		PDF MG150J7KS50 2-110A1B MG150J7KS50

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES  High speed low loss IGBT. Low-injection punch-through IGBT.  Low driving power due to low input capacitance MOS gate.  High speed low recovery loss diode.


    Original     		PDF IGBT-SP-13012 P1/10 MBN800E33D-AX 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE MIG50J804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG50J804H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 3ji 50A /600V High Speed Type IGBT


    OCR Scan     		PDF MIG50J804H /600V