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    SILICON FOOTPRINT ESD Search Results

    SILICON FOOTPRINT ESD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy

    SILICON FOOTPRINT ESD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MA4E2513L-1289

    Abstract: MA4E2513L-1289W MA4E2513-1289
    Text: SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Extremely Small “0301” 1000 x 300um Footprint • Surface Mountable in Microwave Circuits, No Wirebonds Required


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    300um) MA4E2513-1289 MA4E2513L-1289 MA4E2513L-1289 MA4E2513L-1289W MA4E2513L-1289W MA4E2513-1289 PDF

    0201 footprint

    Abstract: MA4E2501-1290 MA4E2501L-1290 MA4E2501L-1290W
    Text: MA4E2501-1290 Series SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes Rev. V1 Features A • Extremely Low Parasitic Capitance and Inductance • Extremely Small 0201 600x300um Footprint • Surface Mountable in Microwave Circuits , No Wirebonds


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    MA4E2501-1290 600x300um) MA4E2501L-1290 0201 footprint MA4E2501L-1290W PDF

    0201 footprint

    Abstract: MA4E2501-1290 MA4E2501L-1290 MA4E2501L-1290T MA4E2501L-1290W
    Text: SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Extremely Small 0201 600x300um Footprint • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


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    600x300um) MA4E2501-1290 MA4E2501L-1290 MA4E2501L-1290 MA4E2501L-1290W 0201 footprint MA4E2501-1290 MA4E2501L-1290T MA4E2501L-1290W PDF

    Silicones

    Abstract: Tyco SESD feeder SESD0201C-006-058 SESD0402S-005-054
    Text: Silicon ESD Protection Devices Silicon ESD Protection Devices NEW Silicon ESD SESD devices help protect electronic circuits against damage from electrostatic discharge (ESD) events. The 0201-sized SESD device’s miniature footprint – measuring 0.6mm x 0.3mm x 0.3mm - is


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    0201-sized SESD0201C-006-058 Silicones Tyco SESD feeder SESD0402S-005-054 PDF

    SESD0402P

    Abstract: Mark B1 SESD0201P SESD0402P1BN-0450-090
    Text: Silicon ESD Protection Devices Silicon ESD Protection Devices NEW Silicon ESD SESD devices help protect electronic circuits against damage from electrostatic discharge (ESD) events. The 0201-sized SESD device’s miniature footprint – measuring 0.6mm x 0.3mm x 0.3mm - is


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    0201-sized SESD0201C-006-058 SESD0402P Mark B1 SESD0201P SESD0402P1BN-0450-090 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4E2513L-1289 SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Extremely Small “0301” 1000 x 300 um Footprint • Surface Mountable in Microwave Circuits, No Wire•


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    MA4E2513L-1289 MA4E2513L-1289 PDF

    500 platinum Hot wire

    Abstract: MA4E2513L-1289 MA4E2513L-1289W MACOM Schottky Diode
    Text: MA4E2513L-1289 SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Extremely Small “0301” 1000 x 300 um Footprint • Surface Mountable in Microwave Circuits, No Wire•


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    MA4E2513L-1289 MA4E2513L-1289 500 platinum Hot wire MA4E2513L-1289W MACOM Schottky Diode PDF

    varactor

    Abstract: No abstract text available
    Text: DATA SHEET SMV2019 to SMV2023: Silicon Hyperabrupt Varactor Diode Chips Features High Q for low loss resonators Low leakage current ● High tuning ratio for wideband VCOs ● SPICE model parameters ● Small footprint chip design ● ● Description Skyworks silicon hyperabrupt junction varactor diode chips are


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    SMV2019 SMV2023: varactor PDF

    HP85047A

    Abstract: 15KV IEC1000-4-2 WLP200 WLP200-01 WLP200-02 WLP-20
    Text: WLP200 CALIFORNIA MICRO DEVICES Wafer Level Package Evaluation RC Filter Network Features Applications • 6 Filters per device • Ultra small footprint, 0.5mm pitch • EMI filter for Mobile Equipment e.g. Cellular Phones • Silicon substrate • Evaluation Device


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    WLP200 WLP200-02 HP85047A 15KV IEC1000-4-2 WLP200 WLP200-01 WLP-20 PDF

    15KV

    Abstract: 30KV IEC1000-4-2 WLP200 WLP200-01 WLP200-02
    Text: WLP200 CALIFORNIA MICRO DEVICES Wafer Level Package Evaluation RC Filter Network Features Applications • 6 Filters per device • Ultra small footprint, 0.5mm pitch • EMI filter for Mobile Equipment e.g. Cellular Phones • Silicon substrate • Evaluation Device


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    WLP200 WLP200-02 15KV 30KV IEC1000-4-2 WLP200 WLP200-01 PDF

    WLP200

    Abstract: 15KV IEC1000-4-2 WLP200-01 WLP200-02
    Text: WLP200 CALIFORNIA MICRO DEVICES Wafer Level Package Evaluation RC Filter Network Features Applications • 6 Filters per device • Ultra small footprint, 0.5mm pitch • EMI filter for Mobile Equipment e.g. Cellular Phones • Silicon substrate • Evaluation Device


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    WLP200 WLP200-02 WLP200 15KV IEC1000-4-2 WLP200-01 PDF

    QFN-12

    Abstract: IBM3115Q012 NC12 QFN12
    Text: IBM3115Q012 Product Overview Tri-Band GSM Integrated Voltage Controlled Oscillator Advance Features Applications • IBM Silicon Germanium BiCMOS 5DM Technology with Cu Metallurgy • GSM/DCS/PCS tri-band direct conversion receivers • Small-footprint, low-profile QFN-12 package


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    IBM3115Q012 QFN-12 IBM3115Q012 QFN-12) vco3115 NC12 QFN12 PDF

    AP4341

    Abstract: MAGJACK application pcb H5007 lan driver SCHEMATIC DIAGRAM OF intel 8086 DA82562EM 82562EZ bob smith termination grid tie inverter schematic diagram intel ic 8086 MAG-JACK
    Text: 82562EZ EX /82540EM Dual Footprint LOM Design Guide Application Note (AP-434) Networking Silicon Notice: This document contains information on products in the design phase of development. Product features and specifications are subject to change without notice. Verify with your local


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    82562EZ /82540EM AP-434) 1500pF/2KV 25Mhz AP4341 MAGJACK application pcb H5007 lan driver SCHEMATIC DIAGRAM OF intel 8086 DA82562EM bob smith termination grid tie inverter schematic diagram intel ic 8086 MAG-JACK PDF

    Untitled

    Abstract: No abstract text available
    Text: BGA725L6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS in ultra small package with 0.77mm² footprint Data Sheet Revision 2.0, 2012-03-09 Preliminary RF & Protection Devices Edition 2012-03-09 Published by Infineon Technologies AG


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    BGA725L6 PDF

    BGA725L6

    Abstract: gps trimble glonass gps TSLP-6 lna 2.5 GHZ s parameter ads design
    Text: BGA725L6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS in ultra small package with 0.77mm² footprint Data Sheet Revision 2.0, 2012-03-09 Preliminary RF & Protection Devices Edition 2012-03-09 Published by Infineon Technologies AG


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    BGA725L6 BGA725L6 gps trimble glonass gps TSLP-6 lna 2.5 GHZ s parameter ads design PDF

    BGA925L6

    Abstract: 925L BGA925
    Text: BGA925L6 Silicon Germanium GNSS Low Noise Amplifier in ultra small package with 0.77mm² footprint Data Sheet Revision 3.0, 2012-01-13 RF & Protection Devices Edition 2012-01-13 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG


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    BGA925L6 BGA925L6 925L BGA925 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGA925L6 Silicon Germanium GNSS Low Noise Amplifier in ultra small package with 0.77mm² footprint Data Sheet Revision 3.0, 2012-01-13 RF & Protection Devices Edition 2012-01-13 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG


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    BGA925L6 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SMV1405-040LF: Surface Mount, 0402 Silicon Abrupt Tuning Varactor Diode Applications • Wide bandwidth VCOs • Wide range voltage-tuned phase shifters and filters Features • Low series resistance: 0.8 Ω typical • High Q: 3200 typical • Industry-standard 0402 footprint


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    SMV1405-040LF: J-STD-020 SMV1405-040LF 01625A PDF

    SMV2020-000

    Abstract: SMV2019 SMV2019-000 SMV2020 SMV2021 SMV2021-000 SMV2022 SMV2022-000 SMV2023 SMV2023-000
    Text: DATA SHEET SMV2019 to SMV2023: Silicon Hyperabrupt Varactor Diode Chips Features High Q for low loss resonators Low leakage current ● High tuning ratio for wideband VCOs ● SPICE model parameters ● Small footprint chip design ● Available lead Pb -free, RoHS-compliant, and Green


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    SMV2019 SMV2023: SMV2020-000 SMV2019-000 SMV2020 SMV2021 SMV2021-000 SMV2022 SMV2022-000 SMV2023 SMV2023-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SMV2019 to SMV2023: Silicon Hyperabrupt Varactor Diode Chips Features High Q for low loss resonators Low leakage current ● High tuning ratio for wideband VCOs ● SPICE model parameters ● Small footprint chip design ● Available lead Pb -free, RoHS-compliant, and Green


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    SMV2019 SMV2023: SMV2020 SMV2021 SMV2022 SMV2023 APN1004. PDF

    SMV1405-040LF

    Abstract: varactor diode SPICE model
    Text: DATA SHEET SMV1405-040LF: Surface Mount, 0402 Silicon Abrupt Tuning Varactor Diode Applications • Wide bandwidth VCOs • Wide range voltage-tuned phase shifters and filters Features • Low series resistance: 0.8 Ω typical • High Q: 3200 typical • Industry-standard 0402 footprint


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    SMV1405-040LF: J-STD-020 SMV1405-040LF 01625A varactor diode SPICE model PDF

    free circuit diagram of USB modem

    Abstract: BGA-64 pad LOG RX 2 1301 16 pin IC R01A SiW1602 latest bluetooth circuits diagrams free circuit diagram of bluetooth modem SiW1701 MC145481 SiW1502
    Text: SiW1760 Baseband Processor Data Sheet 2 FEATURES • Small footprint 64-pin BGA packag9 6 x 6 mm . CLOCK and RESET LOGIC PWR1_EN PWR2_EN ENABLE_RM VSS_PLL VSS_USB VSS_C VSS_P VDD_S VDD_P VDD_C VDD_RM VDD_PLL VDD_USB VDD_UART CLK32K_OUT CLK32K_IN The SiW1760 Baseband Processor is part of Silicon


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    SiW1760 64-pin CLK32K SiW1701 SiW1502 free circuit diagram of USB modem BGA-64 pad LOG RX 2 1301 16 pin IC R01A SiW1602 latest bluetooth circuits diagrams free circuit diagram of bluetooth modem MC145481 PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRF8736M2TR AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET  •  V BR DSS RDS(on) typ. max. ID (Silicon Limited) Qg Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile


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    AUIRF8736M2TR PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRF8736M2TR AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET  •  V BR DSS RDS(on) typ. max. ID (Silicon Limited) Qg Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile


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    AUIRF8736M2TR PDF