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    SILICON EMITTER DATASHEET Search Results

    SILICON EMITTER DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    MC1235F Rochester Electronics LLC MC1235 - Gate, ECL, CDFP14 Visit Rochester Electronics LLC Buy
    100324FM/B Rochester Electronics 100324 - TTL to ECL Translator, 6 Func, Inverted Output, ECL Visit Rochester Electronics Buy
    MC1218L Rochester Electronics LLC MC1218 - ECL to TTL Translator, ECL, CDIP14 Visit Rochester Electronics LLC Buy

    SILICON EMITTER DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    QEE213

    Abstract: QSE243
    Text: QSE243 Low Light Rejection Plastic Silicon Infrared PhotoTransistor Features Description • NPN Silicon Phototransistor with internal base-emitter resistance ■ Package Type: Sidelooker ■ Medium Reception Angle, 50° ■ Clear Plastic Package ■ Matching Emitter: QEE213


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    PDF QSE243 QEE213 QSE243 QEE213

    Untitled

    Abstract: No abstract text available
    Text: KSD1221 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSB906 I-PACK ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage


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    PDF KSD1221 KSB906

    Untitled

    Abstract: No abstract text available
    Text: KSD1406 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSB1015 TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage


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    PDF KSD1406 KSB1015 O-220F

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP12 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=20V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Emitter Voltage Emitter-Base Voltage


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    PDF KSP12 625mW

    Untitled

    Abstract: No abstract text available
    Text: KSD5018 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR BUILT-IN RESISTOR BETWEEN BASE AND EMITTER FOR MOTOR DRIVE TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC


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    PDF KSD5018 O-220

    Untitled

    Abstract: No abstract text available
    Text: KST5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 • Collector-Emitter Voltage: VCEO=160V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    PDF KST5551 625mW OT-23 2N5551

    transistor 2n5550

    Abstract: 2N5550 2N5551
    Text: 2N5550 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 140V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    PDF 2N5550 625mW 2N5551 transistor 2n5550 2N5550

    Untitled

    Abstract: No abstract text available
    Text: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO=25V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    PDF KSP8097 625mW 2N5088

    Untitled

    Abstract: No abstract text available
    Text: KSP5172 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=25V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    PDF KSP5172 625mW

    BC635

    Abstract: BC636 BC638 BC640
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage


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    PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 BC636 BC638 BC640

    Untitled

    Abstract: No abstract text available
    Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=350V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    PDF 2N6517 625mW 2N6515

    bc736

    Abstract: transistor C 639 W bc639 BC635 BC637
    Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage


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    PDF BC635/637/639 BC635/638/640 BC635 BC637 BC639 bc736 transistor C 639 W bc639 BC635 BC637

    Untitled

    Abstract: No abstract text available
    Text: 2N6516 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=300V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    PDF 2N6516 625mW 2N6515

    KSC5019

    Abstract: No abstract text available
    Text: KSC5019 NPN EPITAXIAL SILICON TRANSISTOR LOW SATURATION • VCE sat =0.5V (IC=2A, IB=50mA) TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)


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    PDF KSC5019 PW10ms, Cycle30% KSC5019

    Untitled

    Abstract: No abstract text available
    Text: KSD1943 KSD1943 High Power Transistor TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage


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    PDF KSD1943 O-220 KSD1943TU O-220

    KSD1943

    Abstract: No abstract text available
    Text: KSD1943 KSD1943 High Power Transistor TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage


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    PDF KSD1943 O-220 KSD1943

    Untitled

    Abstract: No abstract text available
    Text: FJT44 FJT44 High Voltage Transistor 1 SOT-223 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage


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    PDF FJT44 OT-223 FJT44TF FJT44KTF OT-223

    FJT44

    Abstract: No abstract text available
    Text: FJT44 FJT44 High Voltage Transistor 1 SOT-223 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage


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    PDF FJT44 OT-223 FJT44

    FJT44

    Abstract: No abstract text available
    Text: FJT44 FJT44 High Voltage Transistor 1 SOT-223 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage


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    PDF FJT44 OT-223 FJT44

    transistor 5401

    Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
    Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor


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    PDF 2N5401 625mW 2N5401 O-92-3 2N5401BU 2N5401CTA 2N5401NLBU 2N5401TA 2N5401TAR transistor 5401 2N5401 fairchild 5401 transistor transistor 2N 5401 Transistor B C 458 2n5401 application

    TIP102

    Abstract: TIP102 Darlington transistor TIP101 TIP100 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A
    Text: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage


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    PDF TIP100/TIP101/TIP102 TIP105/106/107 O-220 TIP100 TIP101 TIP102 TIP100/TIP101/TIP102 TIP102 TIP102 Darlington transistor TIP101 TIP100 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A

    2N5401 fairchild

    Abstract: transistor 2N5401 2N5401 2n5401 transistor
    Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor


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    PDF 2N5401 625mW 2N5401 fairchild transistor 2N5401 2N5401 2n5401 transistor

    Untitled

    Abstract: No abstract text available
    Text: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage


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    PDF TIP100/TIP101/TIP102 TIP105/106/107 O-220 TIP100 TIP101 TIP102 TIP100/TIP101/TIP102

    Untitled

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508AF TV HORIZONTAL OUTPUT APPLICATIONS ABSOLUTE MIXIMUM RATING C haracteristic Symbol Rating Unit Collector Emitter Voltage VcES 1500 V Collector Emitter Voltage VcEO 700 V Emitter Base Voltage V ebo 5 V Collector Current DC


    OCR Scan
    PDF BU508AF