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    SILICON DETECTOR DIODES Search Results

    SILICON DETECTOR DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SILICON DETECTOR DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dh340

    Abstract: rf detector diodes
    Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: • packaged diodes • chip They are optimized for wide band applications, in the frequency range from 1 to 18 GHz.


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    PDF DH340 rf detector diodes

    Untitled

    Abstract: No abstract text available
    Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: • packaged diodes • chip They are optimised for wide band applications, in the frequency range from 1 to 18 GHz.


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    PDF DH340

    Untitled

    Abstract: No abstract text available
    Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: • packaged diodes • chip They are optimized for wide band applications, in the frequency range from 1 to 18 GHz.


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    PDF DH340

    DH323

    Abstract: No abstract text available
    Text: SILICON SCHOTTKY DIODES Selection guide SILICON SCHOTTKY DIODES Selection Guide PAGE SCHOTTKY BARRIER DETECTOR DIODES 1-29 SCHOTTKY BARRIER MIXER DIODES 1-30 1-28 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes


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    x band diode detector waveguide

    Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
    Text: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes


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    1N830A

    Abstract: "Point Contact Diodes" 1N32 VIDEO DETECTOR MicroMetrics tangential 1N1611 1N32 1N32A 1N830 1N833
    Text: Point Contact Diodes: 1N Series Ka Band Point Contact Detector Diodes Description This MicroMetrics 1N series of Point Contact Detector diodes is designed for applications through Ka-Band. These diodes employ epitaxial silicon optimized for high tangential signal


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    PDF CS100 CS101 1N830 1N830A 1N32A 1N833 1N830A "Point Contact Diodes" 1N32 VIDEO DETECTOR MicroMetrics tangential 1N1611 1N32 1N32A 1N830 1N833

    Untitled

    Abstract: No abstract text available
    Text: Agilent HSCH-9161, -9162 Zero Bias Beamlead Detector Diodes Data Sheet Features • Low junction capacitance • Lower temperature coefficient than silicon 231 9.1 Description Agilent’s HSCH-9161 and HSCH-9162 are GaAs beamlead detector diodes, fabricated using


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    PDF HSCH-9161, HSCH-9161 HSCH-9162 5965-8854E 5988-5907EN 10E-12 10E-6 HSCH-916x

    "Point Contact Diodes"

    Abstract: 1N1611A 1N32A 1N830 1N32 1N32 VIDEO DETECTOR 1N377 tangential point contact 1N3778
    Text: Point Contact Diodes Point Contact Diodes: 1N Series Ka Band Point Contact Detector Diodes Description This MicroMetrics 1N series of Point Contact Detector diodes is designed for applications through Ka-Band. These diodes employ epitaxial silicon optimized for high tangential signal


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    PDF CS100 CS101 1N830 1N830A 1N32A 1N833 "Point Contact Diodes" 1N1611A 1N32A 1N830 1N32 1N32 VIDEO DETECTOR 1N377 tangential point contact 1N3778

    CDB7619-000

    Abstract: CDE7618-000 Silicon Detector Diodes
    Text: EBA lpha Silicon Schottky Barrier Detector Diodes Features Both P-Type and N-Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes


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    1N2102

    Abstract: DO-22 1N1611A 1N311 1n3143 DO-37 1N830A 1N2926 1n76a 1N76
    Text: }{È \\ SILICON POINT CONTACT DETECTOR DIODES ASI Point Contact Detector Diodes are designed for applications from UHF through 16 GHz. They feature high burnout resistance, broadband operation and high tangential signal sensitivity. These detector diodes are


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    PDF DO-22, DO-23, DO-37 1N830 1N830A 1N2102 1N32A 1N76A 1N833 1N833A DO-22 1N1611A 1N311 1n3143 1N2926 1N76

    Untitled

    Abstract: No abstract text available
    Text: SILICON SCHOTTKY BARRIER DETECTOR DIODES Silicon Schottky barrier detector diodes are available as : • packaged diodes • beam -lead diodes They are optimised for wide band applications, in the frequency range from 1 to 18 GHz. Packaged diodes Frequency


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    a5090d

    Abstract: A5090 A4072 x band diode detector waveguide 1N358A JAN 1N1611AR
    Text: Silicon Point Contact Detector Diodes Features • ■ Broadband Operation Bias Not Required Ml Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­


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    LN358

    Abstract: x band diode detector waveguide 1N830A P009 1N358A KA band diode detector waveguide video Log Amplifier detector 18 GHz DDA5093 "Point Contact Diodes" 1n833
    Text: Silicon Point Contact Detector Diodes 'T en cry Features • Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­


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    1N358R

    Abstract: 1N358 1N830A 1N1611AR 1N3582 dda5093 1N1611 P-009 1N830 Silicon Point Contact Diode
    Text: Silicon Point Contact Detector Diodes EDAlpha 1N358,1N1611,1N83X, DDA4072, DDA5XX, DDA6797 Series Features Broadband Operation Bias Not Required Description Maximum Ratings Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz .


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    PDF 1N358 1N1611 1N83X, DDA4072, DDA6797 1N358R 1N830A 1N1611AR 1N3582 dda5093 P-009 1N830 Silicon Point Contact Diode

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbSB'lBl ODSblMa 113 • APX BA 281 blE D A SILICON RATIO DETECTOR DIODE Silicon planar epitaxial diode in DO-35 envelope, intended for use in ratio detector circuits. Due to small spreads of forward voltage at low currents and of junction capacitance, the diodes can be used as


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    PDF DO-35 DO-35 OD-27) 10/rA

    1N21

    Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
    Text: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di­ odes by basic construction, package style and frequency band. Type


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    PDF 1N23W 1N415 DMA6498 1N3747W 1N3746 1N3745 DMA6497 DMA5223 DMA5278 DMA5253 1N21 1N1132 1N23 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1n26

    DC4582-024

    Abstract: CDC7609-018 Silicon Point Contact Mixer Diodes
    Text: Zero Bias Silicon Schottky Barrier Detector Diodes Features • Zero Turn On, No Bias Required • Low Video Impedance Magnification: 10X Description Alpha’s series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for


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    PDF ap005-801 DDC4561-024 DDC4562-024 DC4563-024 DC4564-024 DC4582-024 DDC6980-024 DDC4717-024 DDC4722-024 DDC4565-000 CDC7609-018 Silicon Point Contact Mixer Diodes

    pulse metal detector

    Abstract: x band diode detector waveguide diode detector x band Silicon Point Contact Mixer Diodes Schottky Barrier Diodes for detectors Silicon Detector Diodes Silicon Detector Silicon Point Contact Diode
    Text: Silicon Schottky Barrier Detector Diodes Features • ■ ■ Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Applications Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications


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    76220

    Abstract: No abstract text available
    Text: Zero Bias Silicon Schottky Barrier Detector Diodes CDC, DDC Series Features • Zero Turn On, No Bias Required ■ Low Video Impedance Description Alpha’s series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for


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    Dp 104

    Abstract: Silicon Detector TEKELEC 302 Tekelec DETECTOR diode
    Text: SILICON BEAM-LEAD SCHOTTKY BARRIER DETECTOR DIODES Silicon beam -lead detector diodes are low barrier type. They are glassed to reduce parasitic ca p a cita n ce and strengthen the leads. p l i w l p i TAÑéÉNÍflA.L V , V id eo • ' ■ '^ t à a T iv fr Y


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    Untitled

    Abstract: No abstract text available
    Text: GEC PLES S EY DC1322/24 GaAs SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES These diodes are used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as sensitive broadband detectors at high microwave frequencies.


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    PDF DC1322/24 250mW 200mW 600mV 150pA) -20dBm) 150pA 375GHz -48dBm

    United Detector Technology Photodiodes

    Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
    Text: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS


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    PDF T-41-53 T-41-53 850nm 850nm/1kHz 0V/50Q PIN-10D 050x0 P/N-125DPL PIN-220D, PIN-220DP United Detector Technology Photodiodes United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp

    diodes

    Abstract: em 434 IMPATT gunn diodes Tuning Varactors varactors GUNN Diodes high frequency step recovery diodes PIN diodes
    Text: M icro w ave S em ico nducto rs Contents PAGE Schottky Diodes Silicon Schottky Mixer Diodes . 404 Silicon Schottky Detector Diodes 408 Frequency Multiplier Diodes Silicon Step Recovery Diodes GaAs Multiplier Varactors Tuning Varactor Diodes Silicon Tuning Varactors


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    PDF 426iplier diodes em 434 IMPATT gunn diodes Tuning Varactors varactors GUNN Diodes high frequency step recovery diodes PIN diodes

    METAL DETECTOR circuit

    Abstract: DDC4717-024
    Text: Zero Bias Silicon Schottky Barrier Detector Diodes EHAlpha CDC, DDC Series Features • Zero Turn On, No Bias Required ■ Low Video Impedance Description Alpha’s series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for


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    PDF circui4579 METAL DETECTOR circuit DDC4717-024