Untitled
Abstract: No abstract text available
Text: BR100/03LLD . BR100/04LLD Surface mount bidirectional Silicon-Trigger-Diodes DIAC Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Version 2004-10-01 Breakover voltage Durchbruchsspannung Plastic case MiniMELF Kunststoffgehäuse MiniMELF
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BR100/03LLD
BR100/04LLD
OD-80
DO-213AA
UL94V-0
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50Hz sine wave generator
Abstract: 50hz sine generator xenon ignitor sidac ignitor xenon DIACS xenon lamp igniter NTE6416 NTE6419 Sine Wave Generator
Text: NTE6415 thru NTE6419 Bidirectional Thyristor Diodes SIDAC Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding
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NTE6415
NTE6419
NTE6419
NTE6416
NTE6417
NTE6418
NTE6415
50Hz sine wave generator
50hz sine generator
xenon ignitor
sidac
ignitor xenon
DIACS
xenon lamp igniter
NTE6416
Sine Wave Generator
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL DB3S.DB4S SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at
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1111sealed
1111thyristors
1111breakover
1111current
1111volts
100Hz
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DIAC DB3
Abstract: diac DB3 Do 35 diac 083
Text: SILICON BIDIRECTIONAL DIAC DB3 TECHNICAL SPECIFICATION FEATURES VOLTAGE 32 Volts VBO typ. 32V typical breakover voltage CURRENT 100 µAmps (IBO max.) Low breakover current at breakover voltage Three layer, hermetically sealed body DIMENSIONS - millimeters (inches)
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DO-35
DO-35,
100Hz
DIAC DB3
diac DB3 Do 35
diac 083
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at
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1111sealed
1111thyristors
1111breakover
1111current
1111volts
DO-35
100Hz
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bl db3 galaxy
Abstract: db3 bl DB3 galaxy bl db3 bl db4 Galaxy Semiconductor db3 DIACS db3 a-405 A-405
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
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1111sealed
1111thyristors
1111breakover
1111current
1111volts
100Hz
bl db3 galaxy
db3 bl
DB3 galaxy
bl db3
bl db4
Galaxy Semiconductor db3
DIACS
db3 a-405
A-405
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DB6 106 diode
Abstract: DC34 diode db6
Text: DB3-DB6 SILICON BIDIRECTIONAL DIAC FEATURE DO-35 GLASS The three layer ,two terminal,axial lead,hermetically sealed diacs are designed specifically for triggering thyristors.They 0.079(2.0) MAX demonstrate low breakover current at breakover voltage as DIA
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DO-35
DB3/DC34/DB4/DB6
100Hz
DB6 106 diode
DC34
diode db6
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diac triac control circuit motor
Abstract: diac with triac DIAC-Triac DIAC-Triac applications datasheet DIAC bidirectional diode thyristor diac DIAC DIAC-Triac full wave phase control applications diac data sheet diac triac
Text: LSDB3, LSDB4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current.
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LS-34
diac triac control circuit motor
diac with triac
DIAC-Triac
DIAC-Triac applications
datasheet DIAC
bidirectional diode thyristor diac
DIAC
DIAC-Triac full wave phase control applications
diac data sheet
diac triac
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Untitled
Abstract: No abstract text available
Text: DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS POWER DISSIPATION 150 mW DO - 35 FEATURES ●Three way layer two terminal, axial lead , .020 TYP. 0.51 hermetically sealed diacs are designed specifically for triggering thyrisitors .The demonstrate low breakover current.
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DO-35case.
100Hz
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bl db3 galaxy
Abstract: bl db3 db3 bl DIACs
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
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1111sealed
1111thyristors
1111breakover
1111current
1111volts
DO-35
100Hz
bl db3 galaxy
bl db3
db3 bl
DIACs
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diac triac control circuit motor
Abstract: DIAC-Triac full wave phase control applications DIAC-Triac applications datasheet DIAC diac with triac diac DIAC-Triac thyristor motor speed control circuit DIACS DIAC EQUIVALENT circuit
Text: LLDB3, LLDB4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current.
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DB3 ST
Abstract: DIACS Low Voltage DIACs thyristor motor speed control circuit DIACS low current universal MOTOR speed control DC34 ST DB3
Text: DB3, DB4, DC34 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse
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DO-35
DB3 ST
DIACS
Low Voltage DIACs
thyristor motor speed control circuit
DIACS low current
universal MOTOR speed control
DC34
ST DB3
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DIAC
Abstract: diac 5v diac 5v vbo datasheet DIAC br 100 diac DIAC 100/03 DIAC thyristor DIAC BR 100 diac vbo 10V semikron thyristor
Text: BR 100/03 LLD . BR 100/04 LLD Surface mount bidirectional Silicon-Trigger-Diodes DIAC Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Breakover voltage Durchbruchsspannung 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF
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OD-80
DO-213AA
UL94V-0
DIAC
diac 5v
diac 5v vbo
datasheet DIAC
br 100 diac
DIAC 100/03
DIAC thyristor
DIAC BR 100
diac vbo 10V
semikron thyristor
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DIAC
Abstract: datasheet DIAC DIAC EQUIVALENT circuit diac 5v vbo DIAC EQUIVALENT diac terminals diac 5v vbo-35 bidirectional diode thyristor diac DIAC DATASHEET
Text: BR 100/03 LLD . BR 100/04 LLD Surface mount bidirectional Silicon-Trigger-Diodes DIAC Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Breakover voltage Durchbruchsspannung 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF
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OD-80
DO-213AA
UL94V-0
DIAC
datasheet DIAC
DIAC EQUIVALENT circuit
diac 5v vbo
DIAC EQUIVALENT
diac terminals
diac 5v
vbo-35
bidirectional diode thyristor diac
DIAC DATASHEET
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
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1111sealed
1111thyristors
1111breakover
1111current
1111volts
100Hz
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bl db3 galaxy
Abstract: db3 bl 100HZ 05R05 DB3 galaxy
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
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1111sealed
1111thyristors
1111breakover
1111current
1111volts
100HZ
bl db3 galaxy
db3 bl
100HZ
05R05
DB3 galaxy
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DB3 ST
Abstract: diac db3 db3 diac range EQUIVALENT NO. OF DB3 DIAC db3 diac DIAC-Triac datasheet DIAC diac DB3 application note DIAC BR 100 DIAC-Triac applications
Text: DB3, DB4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current.
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diode DB3
Abstract: db6 do-35 diac 083 diagram DC34
Text: DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC FEATURE DO-35 GLASS The three layer ,two terminal,axial lead,hermetically sealed diacs are designed specifically for triggering thyristors.They 0.079(2.0) MAX demonstrate low breakover current at breakover voltage as
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DB3/DC34/DB4/DB6
DO-35
DB3/DC34/DB4/DB6
100Hz
diode DB3
db6 do-35
diac 083
diagram
DC34
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SILICON BIDIRECTIONAL DIAC
Abstract: No abstract text available
Text: TM Micro Commercial Components SILICON BIDIRECTIONAL DIAC MCC Part Number Breakover Voltage Repetitive Peak OnState Current @ f=100HZ Output Voltage Breakover Current Breakover Voltage Symmetry Rise Time VBO ITRM @ TP VO IBO max |+VBO| - |-VBO| Tr V mA V
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100HZ
DO-35G
SILICON BIDIRECTIONAL DIAC
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05R05
Abstract: No abstract text available
Text: DB3M.DB4M SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES MINI-MELF Cathode indification φ1 .5±0.1 The three layer,two termnal,hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low break over current at break
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500KD
100Hz
05R05
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DIAC-Triac applications
Abstract: diac DIAC-Triac full wave phase control applications DIAC-Triac DIAC-Triac* 120v triac and diac diac with triac bidirectional diode thyristor diac diac triac diac triac control circuit motor
Text: LSDB-3, LSDB-4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover
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LS-34
DIAC-Triac applications
diac
DIAC-Triac full wave phase control applications
DIAC-Triac
DIAC-Triac* 120v
triac and diac
diac with triac
bidirectional diode thyristor diac
diac triac
diac triac control circuit motor
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diac marking
Abstract: DIAC 220v
Text: DB3MJ Silicon Bidirectional Diac VOLTAGE RANGE: 28-36 V SMAJ 4.3±0.1 2.6±0.15 1.70±0.25 Features The three layer,two termnal,axial lead,hermetically 11 11sealed diacs are designed specifically for triggering 111 1thyristors.They demonstrate low breakover current at
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120Hz
203MAX
11sealed
500KD
100Hz
diac marking
DIAC 220v
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Untitled
Abstract: No abstract text available
Text: DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V A-405 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
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1111sealed
1111thyristors
1111breakover
1111current
1111volts
120Hz
500KD
100Hz
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DIAC DB3
Abstract: db3 diac number diac DIAC db4 diac
Text: MCC TM Micro Commercial Components SILICON BIDIRECTIONAL DIAC MCC Part Number Breakover voltage VBO V Repetitive Peak OnState Current @ f=100HZ ITRM @ TP A us Output Voltage Breakover Current Breakover Voltage Symmetry Rise Time VO V IBO max µA |+VBO| - |-VBO|
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100HZ
DO-35G
DIAC DB3
db3 diac
number diac
DIAC
db4 diac
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