Low Voltage DIACs
Abstract: No abstract text available
Text: DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V DO-35 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
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Original
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PDF
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DO-35
1111sealed
1111thyristors
1111breakover
1111current
1111volts
120Hz
500KD
100Hz
Low Voltage DIACs
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
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Original
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PDF
|
1111sealed
1111thyristors
1111breakover
1111current
1111volts
100Hz
|
bl db3 galaxy
Abstract: db3 bl 100HZ 05R05 DB3 galaxy
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
|
Original
|
PDF
|
1111sealed
1111thyristors
1111breakover
1111current
1111volts
100HZ
bl db3 galaxy
db3 bl
100HZ
05R05
DB3 galaxy
|
bl db3 galaxy
Abstract: bl db3 db3 bl DIACs
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
|
Original
|
PDF
|
1111sealed
1111thyristors
1111breakover
1111current
1111volts
DO-35
100Hz
bl db3 galaxy
bl db3
db3 bl
DIACs
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bl db3 galaxy
Abstract: db3 bl DB3 galaxy bl db3 bl db4 Galaxy Semiconductor db3 DIACS db3 a-405 A-405
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
|
Original
|
PDF
|
1111sealed
1111thyristors
1111breakover
1111current
1111volts
100Hz
bl db3 galaxy
db3 bl
DB3 galaxy
bl db3
bl db4
Galaxy Semiconductor db3
DIACS
db3 a-405
A-405
|
Untitled
Abstract: No abstract text available
Text: DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V A-405 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
|
Original
|
PDF
|
1111sealed
1111thyristors
1111breakover
1111current
1111volts
120Hz
500KD
100Hz
|
Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL DB3S.DB4S SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at
|
Original
|
PDF
|
1111sealed
1111thyristors
1111breakover
1111current
1111volts
100Hz
|
Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at
|
Original
|
PDF
|
1111sealed
1111thyristors
1111breakover
1111current
1111volts
DO-35
100Hz
|